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Epitaxial, single crystal films of silicon by evaporation under ultrahigh vacuum
Classified
abstracts
1535-1549
field increases the plasma density and prevents the formation dielectric film at the cathode during reactive sputtering. F Vratny, J Electrochem Sot, 114, 1967, 505-507. 1535. An ac electron bombardment carbon. (USA)
of a
30 technique for vacuum deposition of
An ac electron bombardment principle has been introduced and applied to the design of circuit elements. Using this principle a technique for the production of high purity evaporated carbon films has been developed. The circuit and the electrode configurations for the vacuum evaporation of carbon are described. C W Kazmierowicz and G E Myers, Rev Sri Instrum, 38, 1967, 560-561. 30 1536. In situ measurements of magnetic properties in vacuum-deposited permalloy films.
(USA)
The quasi-static magnetic properties of vacuum-deposited permalloy films of zero magnetostrictive composition are examined in situ in an evaporator equipped with a laser-operated, Kerr magneto-optic hysteresigraph. K Y Abn, IBM J Res Develop, 10 (6). 1966, 477483. 30 (Japan) 1537. Ultrahigh vacuum electron beam evaporator. A new UHV evaporator with electron gun has been designed for a broad range of substrate temperature and deposition rate. Ultimate pressure is 5 x 10-l” torr, using a nude Bayard-Alpert gauge, decreasing to 5 x 10mHtorr, during evaporation of Nb. The electron beam gun has a telescopic type of lens and a full power of 50 kV, 20 mA, valid in the evaporation of refractory materials. Ferromagnetic Ni thin films were prepared and examined by means of ferromagnetic resonance measurements. These films had a smaller residual planar stress than those from conventional HV evaporators. Superconducting Nb thin films were also prepared and found to be abnormal in transition temperature and critical field. H Nose et al, J Vuc Sot Japan, 10 (2), 1967, 57-62 (in Japanese). 30 1538. Oblique-incidence anisotropy and domain configuration in Ni-Co films. (Japan) The uniaxial anisotropy constant has been measured for vacuum deposited Ni-Co alloys with 40-100 per cent Ni to determine whether the origin of the anisotropy due to oblique incidence could be the result of superposition of shape anisotropy of crystal chain and magnetoelastic anisotropy. Films were evaporated onto preheated soft glass substrates. S Ishimura et al, J Phvs Sot Japan, 22, 1967, 336. 30 1539. Sputtering of a gold hemispherical single crystal. (Great Britain) A hemispherical gold single crystal was bombarded at normal incidence on its whole surface by 5 keV argon ions in a glow discharge. The final shape of the sample exhibits grooves and hills corresponding to crystallographic directions and planes of low indices thus revealing the anisotropy of the sputtering yield. L Francken et al, Phil Mug, 15, 1967, 673-685.
30 1540. An accurate sputtered spot pattern monitor. (Great Britain) An apparatus is described which enables the formation of sputtered spot patterns to be continuously monitored and photographed. Provision is also made to allow rotation and tilting of the single crystal target to present any orientation to the incident ion beam. G E Chapman and J C Kelly, J Sri Instrum, 44, 1967, 261-264. 30 single crystal films of silicon by evaporation under ultrahigh vacuum. (France) Silicon was evaporated by means of a 10 kW electron beam gun with pressures, before evaporation of 5 x lO-‘O to 5 x 1O-9 torr. Evaporation rates varied between 170 and 3500 Ajmin and the films were deposited on induction-heated, single crystal silicon substrates. The film structures were examined by reflection electron diffraction and x-ray diffraction techniques. Single crystal films were produced throughout the entire investigated range of substrate temperature (1200 to below 600°C). Research is in progress to determine the precise temperature at which polycrystalline structures appear. The 1541. Epitaxial,
540
samples obtained were utilized in the manufacture transistors. C Constantin et al, Le Vide, 22 (128), March-April
of diodes and 1967, 105-109
(in French). 30 1542. Characteristics
of metallic films prepared by evaporation under high vacuum. (France) Using a method previously described by the authors, the influence of film thickness, condensation rate and wall temperature on the area of evaporated metal films is determined. Proportionalit between areas and film thickness is observed only when this thickness is higher than a value depending upon the condensation temperature. Y Delanios et al, J Chim Phys, 64, 1967, 572-575 (in French). 30 1543. Method for producing thin, plane, single-crystal films. (Germany) A procedure is described for preparing thin, plane, single crystal films from the solid, suitable for transmission electron diffraction. The essential point is to thin down the films by mechanical polishing to thicknesses of about 1 micron before applying chemical or sputtering procedures. H Kiendl, Z Nuturfbrsch, 21A, 1966, 2093-2096 (in German). 30 1544. Deposition of thin films under the influence of fast ion irradiation. (Germany) Evaporated thin films deposited by atoms and ions simultaneously have mechanical stability and optical reflective properties different from those deposited as atoms only. A brief description of the ion source for the ion-atom process is given. Deposition takes place at 1O-5 torr. E F Krimmel and A Gordon, Z Angew PhJss, 22, 1966, 1-2. 30 1545. Structure of thin films of thallium chloride condensed in vacuum at room temperature. (Spain) The behaviour of thallium chloride films thinner than 100 nm has been found to be similar to that of the other halide films studied previously, ie there is a random orientation. A preferred orientation appears when the thickness of the films increases. J Sancho et al, An Real Sot Espun Fis Chim, 62A, 1966, 363-367 (in Spanish). 30 1546. High temperature oxidation of thin magnesium films. (Rumania)
The oxidation kinetics of thin magnesium films deposited by vacuum evaporation on mica were studied at 350, 375, 400 and 430°C and at oxygen partial pressures of 5, 25, 50, 100 and 300 torr. I G Margulescu et al, Rev Roumuine Chem, 11, 1966, 769-775. 30 1547. Possibilities of evaporation-depositing thin films of tantalum (Poland) from the liquid phase by means of electron-bombardment. The properties of thin films of Ta, for the formation of very rugged and very stable resistors, conductors and capacitors, are presented. The principal advantage of the described method is the attainment of a small volume of molten Ta, which reduces heating problems usually encountered in the more conventional method of heating Ta in a crucible and which greatly reduces the vacuum problems. As a result a simple inexpensive vacuum system can be used. B Zebchowski, Przegl Elektron, 7, 1966. 539-540 (in Polish). 30
(USSR) Apparatus and procedure are described for the preparation of dielectric thin films by cathode sputtering of Ta or Ti in an oxygen atmosphere at pressures in the 1O-2 torr range. Thin film capacitors were obtained with capacity of 0.1 /LF/crn*, power factor of 9 x lo-* and breaking voltage of 14 V for Ta,O, dielectric. Respective parameters were 2.15 /IF/cm2, 6.5 x IO-* and 3 V for the Ti oxides. Yu A Prokhorov et al, Fiz Tverd Telu, 9 (5), May 1967, 1398-1402 1548. Dielectric films formed by reactive sputtering.
(in Russian). 30 1549. Effect of condensation
rate of CdTe, Te and Cd on critical temperatures and phase composition of films. (USSR) A strong dependence of critical temperature on evaporation rate was observed during vacuum condensation of CdTe, Te and Cd. With condensation rates of 1Ol4 to 3 x 1Ol6 atoms/cm2 set the critical temperatures were 300-370°C for CdTe, 22&35O”C for Te, and lO_230°C for Cd. It is concluded that, for any composition of the cadmium telluride, cadmium and tellurium vapour mixture, pure
abstracts
1535-1549
field increases the plasma density and prevents the formation dielectric film at the cathode during reactive sputtering. F Vratny, J Electrochem Sot, 114, 1967, 505-507. 1535. An ac electron bombardment carbon. (USA)
of a
30 technique for vacuum deposition of
An ac electron bombardment principle has been introduced and applied to the design of circuit elements. Using this principle a technique for the production of high purity evaporated carbon films has been developed. The circuit and the electrode configurations for the vacuum evaporation of carbon are described. C W Kazmierowicz and G E Myers, Rev Sri Instrum, 38, 1967, 560-561. 30 1536. In situ measurements of magnetic properties in vacuum-deposited permalloy films.
(USA)
The quasi-static magnetic properties of vacuum-deposited permalloy films of zero magnetostrictive composition are examined in situ in an evaporator equipped with a laser-operated, Kerr magneto-optic hysteresigraph. K Y Abn, IBM J Res Develop, 10 (6). 1966, 477483. 30 (Japan) 1537. Ultrahigh vacuum electron beam evaporator. A new UHV evaporator with electron gun has been designed for a broad range of substrate temperature and deposition rate. Ultimate pressure is 5 x 10-l” torr, using a nude Bayard-Alpert gauge, decreasing to 5 x 10mHtorr, during evaporation of Nb. The electron beam gun has a telescopic type of lens and a full power of 50 kV, 20 mA, valid in the evaporation of refractory materials. Ferromagnetic Ni thin films were prepared and examined by means of ferromagnetic resonance measurements. These films had a smaller residual planar stress than those from conventional HV evaporators. Superconducting Nb thin films were also prepared and found to be abnormal in transition temperature and critical field. H Nose et al, J Vuc Sot Japan, 10 (2), 1967, 57-62 (in Japanese). 30 1538. Oblique-incidence anisotropy and domain configuration in Ni-Co films. (Japan) The uniaxial anisotropy constant has been measured for vacuum deposited Ni-Co alloys with 40-100 per cent Ni to determine whether the origin of the anisotropy due to oblique incidence could be the result of superposition of shape anisotropy of crystal chain and magnetoelastic anisotropy. Films were evaporated onto preheated soft glass substrates. S Ishimura et al, J Phvs Sot Japan, 22, 1967, 336. 30 1539. Sputtering of a gold hemispherical single crystal. (Great Britain) A hemispherical gold single crystal was bombarded at normal incidence on its whole surface by 5 keV argon ions in a glow discharge. The final shape of the sample exhibits grooves and hills corresponding to crystallographic directions and planes of low indices thus revealing the anisotropy of the sputtering yield. L Francken et al, Phil Mug, 15, 1967, 673-685.
30 1540. An accurate sputtered spot pattern monitor. (Great Britain) An apparatus is described which enables the formation of sputtered spot patterns to be continuously monitored and photographed. Provision is also made to allow rotation and tilting of the single crystal target to present any orientation to the incident ion beam. G E Chapman and J C Kelly, J Sri Instrum, 44, 1967, 261-264. 30 single crystal films of silicon by evaporation under ultrahigh vacuum. (France) Silicon was evaporated by means of a 10 kW electron beam gun with pressures, before evaporation of 5 x lO-‘O to 5 x 1O-9 torr. Evaporation rates varied between 170 and 3500 Ajmin and the films were deposited on induction-heated, single crystal silicon substrates. The film structures were examined by reflection electron diffraction and x-ray diffraction techniques. Single crystal films were produced throughout the entire investigated range of substrate temperature (1200 to below 600°C). Research is in progress to determine the precise temperature at which polycrystalline structures appear. The 1541. Epitaxial,
540
samples obtained were utilized in the manufacture transistors. C Constantin et al, Le Vide, 22 (128), March-April
of diodes and 1967, 105-109
(in French). 30 1542. Characteristics
of metallic films prepared by evaporation under high vacuum. (France) Using a method previously described by the authors, the influence of film thickness, condensation rate and wall temperature on the area of evaporated metal films is determined. Proportionalit between areas and film thickness is observed only when this thickness is higher than a value depending upon the condensation temperature. Y Delanios et al, J Chim Phys, 64, 1967, 572-575 (in French). 30 1543. Method for producing thin, plane, single-crystal films. (Germany) A procedure is described for preparing thin, plane, single crystal films from the solid, suitable for transmission electron diffraction. The essential point is to thin down the films by mechanical polishing to thicknesses of about 1 micron before applying chemical or sputtering procedures. H Kiendl, Z Nuturfbrsch, 21A, 1966, 2093-2096 (in German). 30 1544. Deposition of thin films under the influence of fast ion irradiation. (Germany) Evaporated thin films deposited by atoms and ions simultaneously have mechanical stability and optical reflective properties different from those deposited as atoms only. A brief description of the ion source for the ion-atom process is given. Deposition takes place at 1O-5 torr. E F Krimmel and A Gordon, Z Angew PhJss, 22, 1966, 1-2. 30 1545. Structure of thin films of thallium chloride condensed in vacuum at room temperature. (Spain) The behaviour of thallium chloride films thinner than 100 nm has been found to be similar to that of the other halide films studied previously, ie there is a random orientation. A preferred orientation appears when the thickness of the films increases. J Sancho et al, An Real Sot Espun Fis Chim, 62A, 1966, 363-367 (in Spanish). 30 1546. High temperature oxidation of thin magnesium films. (Rumania)
The oxidation kinetics of thin magnesium films deposited by vacuum evaporation on mica were studied at 350, 375, 400 and 430°C and at oxygen partial pressures of 5, 25, 50, 100 and 300 torr. I G Margulescu et al, Rev Roumuine Chem, 11, 1966, 769-775. 30 1547. Possibilities of evaporation-depositing thin films of tantalum (Poland) from the liquid phase by means of electron-bombardment. The properties of thin films of Ta, for the formation of very rugged and very stable resistors, conductors and capacitors, are presented. The principal advantage of the described method is the attainment of a small volume of molten Ta, which reduces heating problems usually encountered in the more conventional method of heating Ta in a crucible and which greatly reduces the vacuum problems. As a result a simple inexpensive vacuum system can be used. B Zebchowski, Przegl Elektron, 7, 1966. 539-540 (in Polish). 30
(USSR) Apparatus and procedure are described for the preparation of dielectric thin films by cathode sputtering of Ta or Ti in an oxygen atmosphere at pressures in the 1O-2 torr range. Thin film capacitors were obtained with capacity of 0.1 /LF/crn*, power factor of 9 x lo-* and breaking voltage of 14 V for Ta,O, dielectric. Respective parameters were 2.15 /IF/cm2, 6.5 x IO-* and 3 V for the Ti oxides. Yu A Prokhorov et al, Fiz Tverd Telu, 9 (5), May 1967, 1398-1402 1548. Dielectric films formed by reactive sputtering.
(in Russian). 30 1549. Effect of condensation
rate of CdTe, Te and Cd on critical temperatures and phase composition of films. (USSR) A strong dependence of critical temperature on evaporation rate was observed during vacuum condensation of CdTe, Te and Cd. With condensation rates of 1Ol4 to 3 x 1Ol6 atoms/cm2 set the critical temperatures were 300-370°C for CdTe, 22&35O”C for Te, and lO_230°C for Cd. It is concluded that, for any composition of the cadmium telluride, cadmium and tellurium vapour mixture, pure