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1404. Advantages of flow-through evaporators as compared to recycling evaporators
Classified
abstracts
1390-1407
for &hour, the resistivities increased to the range 0.3-300.000 ohm-cm. To determine the type of contact the commonly deposited metals make to CdS, a mask changer was employed to allow the deposition of layerized arrays of metal-CdS-metal in a single pumpdown. Combinations having aluminium as one (or both) of the electrodes exhibited rectifying characteristics, while indium, silver and gold exhibited ohmic characteristics. G G Avis, et al, Rep HDL-TR-1297, AD-622695, July 1965, (Harry Diamond
Labs,
Washington,
DC).
1390. Structure and electrical thin llhns. (USA)
properties
30 CdS
of vacuum-deposited
The effect of condensation rate, substrate temperature and postdeposition treatment on the electrical and structural properties of CdS have been investigated. Rates of from 1 A/set and substrate temperatures from 40 to 275°C were studied. At rates of l-7 A/set the film resistivity increases from 1 ohm-cm to lo5 ohm-cm with an increase in substrate temperature from 40 to 275°C. Films formed on 200°C substrates at increasing rates have resistivity decreasing to 10 ohm-cm at a rate of 200 A/set. L E Terry and E E Komarek, Albuquerque, N Mex).
Rep SC-TM-54-1677,
(Sandia
Corp, 30
1391. Deposition
of silicon on insulating
substrates.
(USA)
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of silicon films on various substrates with one objective being to minimize autodoping and diffusion effects. A masking technique was used to control the nucleation and growth of silicon films on silicon carbide substrates. The preparation of new substrate materials, such as silicon nitride, thorium dioxide, and yttrium oxide in the form of films deposited on silicon and other substrates was attempted. T L Chu et al, Rep AFCRL-54-574, (Westinghouse Electric Corp, Pittsburg,
AD-619992, Pa Res Labs).
July
1965, 30
1392. Thin 6hn evaporation (Czechoslovakia)
Conventional J Fischhof, I&aphasic (USSR)
by electron bombardment.
150-155,
stage - rule in structure formation
(in Czech).
of vacuum
30 condensers.
thin film preparation
Nauk
SSSR,
by vacuum
166 (5),
30 evaporation.
Different methods of evaporation of double-component materials, eg InSb are compared. M Marcin, Elektrotech Cas, 17 (3), 1966, 230-235, (in Czech). 30 1395. On the relations between the breaking strength and the preparation conditions of Cu and Al vacuum condensates. (USSR)
The influence of temperature and material of the substrate was studied. L S Palatnik, et al, Izv VUZ Fiz, 9 (I), 1966, 122-128, (in Russian). 30 : 33 1396. Vacuum deposition by means of an electron beam. (Canada) K Yamagishi, Intern Conf Electron Zon Beam Sci Technol Znst, Toronto, Canada, 1964, 245-263, Pub1 1965. 30 : 42 1397. Refractory crucible for vacuum deposition of metals. (Germany)
A crucible made substantially of CaO which has good stability over a wide temperature range and low oxygen partial pressure at 1500” finds application in vacuum deposition of metals and metallic alloys by using induction heating. The crucible may be manufactured by calcining limestone at about 1200”. J Eckatt and F Pawlek, German Patent 1,207,179 Dee 1965, Appl9 Feb 1961, 3 pages, (in German). 1398. Glow analysis Britain)
(Cl
of an electron beam in a residual
C23 c) 16
gas.
30 : 47 (Great
Ions produced by collisions between beams of electrons and residual gas molecules produce noise in microwave valves. Hence the radia462
1399. Vaporization of advanced powerplant forced convection conditions. (USA)
417-418.
30 metals under vacuum and
Structural metals for advanced powerplants will have to operate at temperatures so high that attrition of the metal by vaporization may become a problem. Therefore calculations are made for several potential structural metals to determine mass loss, surface recession and change in cross-sectional area resulting from protracted vaporization (10,000 hrs) under vacuum and under forced convection. Vaporization of the metals W, Re, Ta, MO under different temperatures and atmospheric conditions are indicated. G E Zima, US At Energy Comm, UCRL-14274, 1965, 25 pages. 30 1400. Epitaxial
deposition of calcium selenide. (Great Britain)
It was found possible to produce large area single-crystal films of Case in a conventional substrate. Photoconductive grade Case was evaporated from an alumina boat on to freshly cleaved mica in an ambient pressure of 1O-6 to 10m4 torr. A Brunnschweiler,
Nature,
209, 1966,
493.
1401. Structure of the metal films produced by vacuum-arc method. (Japan)
30 evaporation
Vacuum-arc evaporation has been used to produce thin metal films. The advantage of this method is that films of conductive materials with high melting points and low vapour pressure can easily be produced without any contamination of foreign atoms from the heat source. M Kikuchi, et al, Jap J Appl Phys, 4 (II), English).
Nov 1965,
940-944,
(in
from a draining liquid lllm. (USA)
The thickness of a laminar liquid film draining from a vertical surface was found analytically, assuming that the evaporation rate from the film surface is a known constant. J R O’Loughlin,
J Heat Transfer,
88 (I),
1966,
77-79.
thin film structure due to substrate
L S Palatnik and G V Fedorov, Dokl Akad Feb II, 1966, 1095-1097, (in Russian). 1394. Semiconductor (Czechoslovakia)
Brit J Appl Phys, 17 (3), Mar 1966,
30
Cas, 17 (2), 1966,
Changes of vacuum condensated temperature were studied.
H Hartnagel,
1402. Evaporating
methods and devices are described. Elektroteeh
tion of blue light, occurring at pressures higher than 10e5 torr, has been analysed by a spectrograph. Two very strong and broad lines are first observed, one from 3911.0 to 3918.5 A and the other from 4275-4285 A. It is probable that both lines are produced by singly ionized oxygen atoms.
1403. Condensation and evaporation from radially grooved disks. (USA) L A Bromley, et al, J Heat Transfer, 88 (I), 1966, 80-86. 1404. Advantages of flow-through evaporators cycling evaporators. (Czechoslovakia)
30 rotating
as compared
30 to re-
Experiences with the construction of the flow-through evaporator “Radikal” are given and some improvements in its construction are proposed. K Lobl, Listy
Cukrovar,
81 (II),
1965,
267-268,
1405. Technique for the production and study layers: application to antimony. (France)
(in Czech). of evaporated
30 thin
Aonaratus utilizing a sninnina Talbot disk is described which permits vacuum evaporafion and formation of thin layers of antimony of several thicknesses simultaneously. Variations in the structure of the thin layer depend on the evaporation technique used. G Mesnard, et al, Rev Opt, 43, 1965, 273-281, (in French). 30 1406. Effect of the composition of vapour-deposited Ni-Cr resistors on the resistivity and temperature coefficient of the film. (Hungary)
Resistor films were deposited by vaporization in commercial equipment on porcelain carriers (a) by vaporizing powder mixtures of Ni and Cr in varying proportions at 1400” and (b) by vaporizing an 60/20 Ni-Cr alloy at 1150” to 1600” for different periods of time. The vacuum applied was about 5-7 x 10M5torr. A Miialyi, Hiradastech 73-81, (in Hungarian).
Ipari
Kutato
Int Kozlemenyei,
5 (3), 1965, 30
1407. Low-temperature vapour growth studies. (USA) A Reisman, T J Watson, Research Center, Yorktown USA, 1965, 110 pages.
Heights,
NY,
abstracts
1390-1407
for &hour, the resistivities increased to the range 0.3-300.000 ohm-cm. To determine the type of contact the commonly deposited metals make to CdS, a mask changer was employed to allow the deposition of layerized arrays of metal-CdS-metal in a single pumpdown. Combinations having aluminium as one (or both) of the electrodes exhibited rectifying characteristics, while indium, silver and gold exhibited ohmic characteristics. G G Avis, et al, Rep HDL-TR-1297, AD-622695, July 1965, (Harry Diamond
Labs,
Washington,
DC).
1390. Structure and electrical thin llhns. (USA)
properties
30 CdS
of vacuum-deposited
The effect of condensation rate, substrate temperature and postdeposition treatment on the electrical and structural properties of CdS have been investigated. Rates of from 1 A/set and substrate temperatures from 40 to 275°C were studied. At rates of l-7 A/set the film resistivity increases from 1 ohm-cm to lo5 ohm-cm with an increase in substrate temperature from 40 to 275°C. Films formed on 200°C substrates at increasing rates have resistivity decreasing to 10 ohm-cm at a rate of 200 A/set. L E Terry and E E Komarek, Albuquerque, N Mex).
Rep SC-TM-54-1677,
(Sandia
Corp, 30
1391. Deposition
of silicon on insulating
substrates.
(USA)
The pyrolysis of silane and the vacuum evaporation of silicon have been used for the deposition of silicon films on various substrates with one objective being to minimize autodoping and diffusion effects. A masking technique was used to control the nucleation and growth of silicon films on silicon carbide substrates. The preparation of new substrate materials, such as silicon nitride, thorium dioxide, and yttrium oxide in the form of films deposited on silicon and other substrates was attempted. T L Chu et al, Rep AFCRL-54-574, (Westinghouse Electric Corp, Pittsburg,
AD-619992, Pa Res Labs).
July
1965, 30
1392. Thin 6hn evaporation (Czechoslovakia)
Conventional J Fischhof, I&aphasic (USSR)
by electron bombardment.
150-155,
stage - rule in structure formation
(in Czech).
of vacuum
30 condensers.
thin film preparation
Nauk
SSSR,
by vacuum
166 (5),
30 evaporation.
Different methods of evaporation of double-component materials, eg InSb are compared. M Marcin, Elektrotech Cas, 17 (3), 1966, 230-235, (in Czech). 30 1395. On the relations between the breaking strength and the preparation conditions of Cu and Al vacuum condensates. (USSR)
The influence of temperature and material of the substrate was studied. L S Palatnik, et al, Izv VUZ Fiz, 9 (I), 1966, 122-128, (in Russian). 30 : 33 1396. Vacuum deposition by means of an electron beam. (Canada) K Yamagishi, Intern Conf Electron Zon Beam Sci Technol Znst, Toronto, Canada, 1964, 245-263, Pub1 1965. 30 : 42 1397. Refractory crucible for vacuum deposition of metals. (Germany)
A crucible made substantially of CaO which has good stability over a wide temperature range and low oxygen partial pressure at 1500” finds application in vacuum deposition of metals and metallic alloys by using induction heating. The crucible may be manufactured by calcining limestone at about 1200”. J Eckatt and F Pawlek, German Patent 1,207,179 Dee 1965, Appl9 Feb 1961, 3 pages, (in German). 1398. Glow analysis Britain)
(Cl
of an electron beam in a residual
C23 c) 16
gas.
30 : 47 (Great
Ions produced by collisions between beams of electrons and residual gas molecules produce noise in microwave valves. Hence the radia462
1399. Vaporization of advanced powerplant forced convection conditions. (USA)
417-418.
30 metals under vacuum and
Structural metals for advanced powerplants will have to operate at temperatures so high that attrition of the metal by vaporization may become a problem. Therefore calculations are made for several potential structural metals to determine mass loss, surface recession and change in cross-sectional area resulting from protracted vaporization (10,000 hrs) under vacuum and under forced convection. Vaporization of the metals W, Re, Ta, MO under different temperatures and atmospheric conditions are indicated. G E Zima, US At Energy Comm, UCRL-14274, 1965, 25 pages. 30 1400. Epitaxial
deposition of calcium selenide. (Great Britain)
It was found possible to produce large area single-crystal films of Case in a conventional substrate. Photoconductive grade Case was evaporated from an alumina boat on to freshly cleaved mica in an ambient pressure of 1O-6 to 10m4 torr. A Brunnschweiler,
Nature,
209, 1966,
493.
1401. Structure of the metal films produced by vacuum-arc method. (Japan)
30 evaporation
Vacuum-arc evaporation has been used to produce thin metal films. The advantage of this method is that films of conductive materials with high melting points and low vapour pressure can easily be produced without any contamination of foreign atoms from the heat source. M Kikuchi, et al, Jap J Appl Phys, 4 (II), English).
Nov 1965,
940-944,
(in
from a draining liquid lllm. (USA)
The thickness of a laminar liquid film draining from a vertical surface was found analytically, assuming that the evaporation rate from the film surface is a known constant. J R O’Loughlin,
J Heat Transfer,
88 (I),
1966,
77-79.
thin film structure due to substrate
L S Palatnik and G V Fedorov, Dokl Akad Feb II, 1966, 1095-1097, (in Russian). 1394. Semiconductor (Czechoslovakia)
Brit J Appl Phys, 17 (3), Mar 1966,
30
Cas, 17 (2), 1966,
Changes of vacuum condensated temperature were studied.
H Hartnagel,
1402. Evaporating
methods and devices are described. Elektroteeh
tion of blue light, occurring at pressures higher than 10e5 torr, has been analysed by a spectrograph. Two very strong and broad lines are first observed, one from 3911.0 to 3918.5 A and the other from 4275-4285 A. It is probable that both lines are produced by singly ionized oxygen atoms.
1403. Condensation and evaporation from radially grooved disks. (USA) L A Bromley, et al, J Heat Transfer, 88 (I), 1966, 80-86. 1404. Advantages of flow-through evaporators cycling evaporators. (Czechoslovakia)
30 rotating
as compared
30 to re-
Experiences with the construction of the flow-through evaporator “Radikal” are given and some improvements in its construction are proposed. K Lobl, Listy
Cukrovar,
81 (II),
1965,
267-268,
1405. Technique for the production and study layers: application to antimony. (France)
(in Czech). of evaporated
30 thin
Aonaratus utilizing a sninnina Talbot disk is described which permits vacuum evaporafion and formation of thin layers of antimony of several thicknesses simultaneously. Variations in the structure of the thin layer depend on the evaporation technique used. G Mesnard, et al, Rev Opt, 43, 1965, 273-281, (in French). 30 1406. Effect of the composition of vapour-deposited Ni-Cr resistors on the resistivity and temperature coefficient of the film. (Hungary)
Resistor films were deposited by vaporization in commercial equipment on porcelain carriers (a) by vaporizing powder mixtures of Ni and Cr in varying proportions at 1400” and (b) by vaporizing an 60/20 Ni-Cr alloy at 1150” to 1600” for different periods of time. The vacuum applied was about 5-7 x 10M5torr. A Miialyi, Hiradastech 73-81, (in Hungarian).
Ipari
Kutato
Int Kozlemenyei,
5 (3), 1965, 30
1407. Low-temperature vapour growth studies. (USA) A Reisman, T J Watson, Research Center, Yorktown USA, 1965, 110 pages.
Heights,
NY,