- Email: [email protected]
24–27 August defects in electronic materials for devices, Statler-Hilton Hotel, Boston, Massachusetts
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CALENDAR OF SOLID STATE EVENTS
From August 14—21, the General Meeting cornprising the General Assembly, the principal scientific sessions, and the work of the scientific Commissions of the Union will take place at the State University of New York at Stony Brook, Long Island, New York. From August 23—27, there will be Topical Meetings of crystallographic interest at the Stony Brook campus and on the Chemical and Physical Aspects of Neutron Scattering at Brookhaven National Laboratory, Long Island. A program of visits to scientific laboratories and cultural attractions in Washington, D.C. will be arranged for August 25—27 in connection with the Congress. A preliminary announcement will be mailed to all known crystallographers in the Spring of 1969. Information: Eighth International Congress of Crystallography, Congress Office, State University of New York, Stony Brook, Long Island, New York 11790, U.S.A. Huitième Congrés International de Cristallographie Ce Congrés, organisé sous l’égide de l’Académie Nationale des Sciences des U.S.A. par l’Union Internationale de cristallographie et par le Comité National de Cristallographie des U.S.A. aura lieu ê I’Université de New York en aoüt 1969. Un colloque préliminaire sur la cristallographie des substances d’importance biologique se tiendra du 7 au 12 aoüt au center de recherches cristallographiques du ‘Roswell Park Memorial Institute, Buffalo, New York.’ Le congrés se tiendra du 14 au 21 aoüt a l’Université de New York (Stony Brook, Long Island). Ii sera suivi du 23 au 27 aoüt de colloques divers et de visites de laboratoires. Renseignement: Eighth International Congress of Crystallography, Congress Office,
Vol.7, No. 13
State University of New York, Stony Brook, Long Island, New York 11790, U.S.A. 24—27 August Defects in Electronic Materials for Devices, Statler-Hilton Hotel, Boston, Massachusetts The Electronic Materials Committee of IMD announces its Eleventh Annual Technical Conference. The conference will include chemical and structural defects: (a) in bulk materials, including epitaxially deposited layers, (b) at interfaces, (c) in insulating layers, (d) in thin and thick films, and (e) in p—n junctions, device and circuit structures. Information: D.P. Seraphim, IBM Components Division, Bldg. 300, Hopewell Junction, N.Y. 12533. 8—10 September
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Grenoble
The physics of solids under pressure An international colloquium on the physical properties of solids under pressure will be organised by the National Center for Scientific Research (France). The program will consist of insulators, semiconductors and metals under pressure. Emphasis will be placed on magnetic properties, transport phenomena, electronic structures and phase transitions. The proceedings of the colloquium will be published later by the National Center for Scientific Research in book form. This colloquium will be under the chairmanship of Professor L. Néel. Attendance at the colloquium will be by invitation.
CALENDAR OF SOLID STATE EVENTS
From August 14—21, the General Meeting cornprising the General Assembly, the principal scientific sessions, and the work of the scientific Commissions of the Union will take place at the State University of New York at Stony Brook, Long Island, New York. From August 23—27, there will be Topical Meetings of crystallographic interest at the Stony Brook campus and on the Chemical and Physical Aspects of Neutron Scattering at Brookhaven National Laboratory, Long Island. A program of visits to scientific laboratories and cultural attractions in Washington, D.C. will be arranged for August 25—27 in connection with the Congress. A preliminary announcement will be mailed to all known crystallographers in the Spring of 1969. Information: Eighth International Congress of Crystallography, Congress Office, State University of New York, Stony Brook, Long Island, New York 11790, U.S.A. Huitième Congrés International de Cristallographie Ce Congrés, organisé sous l’égide de l’Académie Nationale des Sciences des U.S.A. par l’Union Internationale de cristallographie et par le Comité National de Cristallographie des U.S.A. aura lieu ê I’Université de New York en aoüt 1969. Un colloque préliminaire sur la cristallographie des substances d’importance biologique se tiendra du 7 au 12 aoüt au center de recherches cristallographiques du ‘Roswell Park Memorial Institute, Buffalo, New York.’ Le congrés se tiendra du 14 au 21 aoüt a l’Université de New York (Stony Brook, Long Island). Ii sera suivi du 23 au 27 aoüt de colloques divers et de visites de laboratoires. Renseignement: Eighth International Congress of Crystallography, Congress Office,
Vol.7, No. 13
State University of New York, Stony Brook, Long Island, New York 11790, U.S.A. 24—27 August Defects in Electronic Materials for Devices, Statler-Hilton Hotel, Boston, Massachusetts The Electronic Materials Committee of IMD announces its Eleventh Annual Technical Conference. The conference will include chemical and structural defects: (a) in bulk materials, including epitaxially deposited layers, (b) at interfaces, (c) in insulating layers, (d) in thin and thick films, and (e) in p—n junctions, device and circuit structures. Information: D.P. Seraphim, IBM Components Division, Bldg. 300, Hopewell Junction, N.Y. 12533. 8—10 September
—
Grenoble
The physics of solids under pressure An international colloquium on the physical properties of solids under pressure will be organised by the National Center for Scientific Research (France). The program will consist of insulators, semiconductors and metals under pressure. Emphasis will be placed on magnetic properties, transport phenomena, electronic structures and phase transitions. The proceedings of the colloquium will be published later by the National Center for Scientific Research in book form. This colloquium will be under the chairmanship of Professor L. Néel. Attendance at the colloquium will be by invitation.