413. Double variable gas leak

413. Double variable gas leak

Classified abstracts 403-422 24 403. An electrically-operated J B Watkins, Lab Practice, two-way gas valve. f Gwo/ Britczini 14 (II), Nor 1965, lZ...

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Classified

abstracts

403-422 24

403. An electrically-operated J B Watkins, Lab Practice,

two-way gas valve. f Gwo/ Britczini 14 (II), Nor 1965, lZYS_ 1297.

404. Air-inlet

simplicity.

27 : 14 of the con-

Molecular and viscous How in a leak and the determination ductivity. See abstract number 339. 23

valve of great

( USA J

In every vacuum system provision must be made to allow the system to reach atmospheric pressure. ‘lhc \ai\c descr~bcd hcrc i\ claimed to achieve this easily and at minimum C‘O\I. A C MacDonald. Kev Scietrl ImIrrrm, 36 / I I I , ‘VCJI, IY6jz 1620. 21 405. A new extreme high-vacuum New scaling materials coupled

breakable

( USA/

valve.

with complete utliization 01’ an old sealing principle has made po\siblc a new all-metal vaivc that I\ breakable closed at 450 C without solid-htatc bonding.

P L Clarke,

J Vat Sci Tecbnol,

2 (6/,

Nov/Dcc

IY65, 308 3/O.

21 406. Device for protecting the inspection holes in high temperature vacuum apparatus. ( USSR) A Ya Teitel’man et rrl. Byul l;obrr,t i 7owt11~~hl1 Ltrahov. II, lY6.F. 33-34, (in Rusxiu~~) 23 407. Vacuum valves. i USA) D Berringer, 111.s1rlct1rc~nt.s and COII~WI S) .tiet~~.t, 3X f I_‘) , Lkc I ‘/h> II5 117. 25.

Baffles,

An electric abstract

traps discharge

number

35

and

refrigeration

mass spectrometer as a sensitive gasanalyzer. See abstract number 395.

pump vacuum

25 : 18 : 21 systems. Set

I.

leak detector

1-f Inonge.

Kc\,Scient

III. Vacuum

In.v/rutu, 36 ill),

Nov 1965, I642

vacuum technology including cryosorption, pump and pressure calibration studies. (US/l)

diffusion

applications

30. Evaporation

and

sputtering

machine nutnhcr

for temperatures

30 : 20 : 4x to 20 K and

down

361,

: 20 : 41

30

High-vacuum apparatus for studying sublimation weighing method. See abstract number 363.

by the continuous-

P J Bryant and C M Gosselin, Rep N/1S,4-C‘R-63.?3Y, Inst, Kmsas City. Mo, Ma), I Y65. 409. A simple traps. (USA)

inexpensive

liquid

nitrogen

:t4ir/we.\/ Ret

level controller

25 : 33 for cold

The details of construction of a simple non-electrical ilcluld nttrogcn controller are presented. The level controller maintains the liquid nitrogen level in a vacuum cold trap suHiciently constant for the attainment and maintcnancc of prczsure less than 0. I torr for prolonged periods.

J R Woodyard 719.

and C B Cooper,

J Scient

i Crctr/ Brirtritr!

‘5 411. The efficiency of a liquid hydrogen trap in the presence of a leak. (Great Britain) V A Otroschenko, Cr.soge,!ics. 5 (6), Dee 1965, 341, i USSR).

25 412. Ultrahigh

vacuum

in an unbaked

apparatus.

(G,-crrt Brirrritri

27. Leak

cf ul. C‘yj~openicv, 5 i6),

detectors

and

leak

Occ IY6.i. 337 33X.

detection 27

Some data on mass-spectrometrical imestigation ofa halogen leak detector. See abstract number 154

of magnesium 233 (71,

77 --

of work mechanism 389.

: 44

vacuum. 30

415. Effect of vacuum on the tensile properties crystals. j US.4) D P Williams and If G Nelson, Ikant AlME, 134.5.

lY65,

: 37

single

l33Y

30 : 41 416. Method for vacuum deposition of cobalt metal tilms using graph( ,l’c~r/tl~,-lrllrll\ / ite crucibles. A Rose, Nuclrrr~ Itr.tlrr~~.MetId~, 35 / I), IY65. I65 166 30 : 41 417. Vacuum deposited molybdenum films. (USA) Vacuum cvaporatlon of Mo \%ith an electron bombardment on oxidlred sii~cun wafers produces liims whose properties on the condensatton temperature.

R A Holmwood 827 8.~1.

and R Clang,

J L/cctroclre/t/.

Sot,

source depend

112 (N!, IY65.

418. Vacuum-depositing of thin films of iron in sealed systems low pressures. (C‘xdmlowh iu j V L LBska, J Pbv.v,

30 at very

i USA) Description deposition and vacuum made.

methods-electrodeposition, autocatalytIc deposltion-by which the metal film5 can be

30 420. Vacuum

physics

applied

to

deposition

technolog).

Urilrritz)

Vacuum conditions are considered i Gt-ctrr Bfirain) and condcnscd.

1, Holland,

In connection with a study on adsorption propcrtlcs of aluminlum oxide baffles, a number of experlmcnts were carrlcd out on the production of UHV using low temperature 111an unheated apparatus put together with rubber packing. /USSR)

L L Gerasimov

of testing dry film lubricants in an ultrahigh Jr, Proc Imt tInt,irorl Sri, IY65, 365-36X

1nstr11111,42 (Y i /Y65, 717 2’

410. Insulation of liquid gas vessels. Anon, Vacnique, 5 (17). Ott 1965, 7.

30 414. A method

R N Hager

The effcctivcncss of an optically dencc chcm~cai trap in reducing the gaseous contamination of ultrahigh-vacuum syjtcms was studied. The system used an oil diffusion pump with DC-705 pumping fluid. The experiments were done at liquid nitrogen. dry ice and acetone and ambient tcmperaturcs. The data collected by means of a scnj~tive partial pressure analyzer indicated that a significantly lower lcvci of contamination was achieved by coddling the chemlcai trap even to -7X’C. Comparing the data ob~ulned with data taken (11 the trap operating without chemicals, it wa\ found that a significant increase in trapping efficiency can be realized when chemicals arc used. The greatest improvement over the non-chcmlcal condition\ was noted at the dry ice-acctonc blurry tempcraturc. (Author)

22

1643.

25 408. Extreme

:

and residual

27 413. Double variable gas leak. I USA/ I.hc need to admit gas into a highly evacuated cnciosure at a controlled rate is often encountered in research experiments cmpioylng gases. The author has developed a double variable gas leak valve which is a scl of a needle valve and a variable capillary leak in series. This device can control the small rates of gas flow in the range i-10” I /L/SWwith fairly good results, while it behaves iike a conventional needle valve above the range. (Japan)

A gas refrigerating lower. See abstract

equipment

as a trap for diffusion

27 A small

under which film\ are voiatllizcd

Vacrliqrrc, 5 / 171 , Or/ 1965, 2 6. 30

421. Semiconducting

copper sulphide

coatings.

f USSR) A method I\ de\crlbed of depositing conducting copper sulphlde by vacuum ccaporation with subsequent treatment of the deposit 111 qulphur vapours at 70-80 C. The method makes po\slbie the coating of piastlc and polymer film\.

B I’ Kryzhanovshii I67 /6Y,

and A Ya Kuznatsov, Ruv\icrtrl.

Pribor!,

I 7iahIr

\pv-.

2. 30

Production t..pltaxIaI

tiim\

of

la)ers \iilcon

50

vacuum.

of thick.

were

1 by vacuum