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986. Investigation of molecular composition of vapours and structure of condensate at evaporation of some arsenic chalcogenides by laser radiation
Classified abstracts 975-989
9775. Relation between electro-physical sire-quantized InSb illms. (USSR)
properties
and structure
30 of
Electric conductivity and the Hall coefficient of size-quantized InSb films are investigated in the temperature interval 77 to 400°K. The InSb films with thickness of 200 to 2000 8, have been prepared by pulsed evaporation in vacuum 10m5 torr on freshly cleaved mica substrates. Both polycrystalline and textured films were obtained. V N Molin et al, Fir T&h Polup, 6 (8), 1972, 1447-1451 (in Russian). 30 976. Determination of wettability of substrates by island vacuum condensates. (USSR) The contact angle of wetting of glass, NaCl and mica cleavages by island condensates of sulphur is investigated in vacuum 10e5 torr. Sulphur condensation proceeds according to the mechanism vapour -liquid phase at the conditions used. Possibility of utilization of results of such investigations for quantitative description of the processes of nucleus formation in real conditions is shown. L S Palatnik et al, Zavod L ab, 39 (9), 1973, 1098-l 100 (in Russian). 30 977. Character of spontaneous deformation in barium titanate vacuum condensates. (USSR) The character of spontaneous deformation in barium titanate vacuum condensates with thickness of 200 to 5000 8, is investigated in connection with their ferro-electric properties. The barium titanate films have been prepared by thermal discrete evaporation. Yu Ya Tomashpolskiy and M A Sevostyanov, Fir Tverd Telu, 15 (9), 1973, 284&2842 (in Russian). 30 978. The influence of space charge on electrical conductivity of AlSi3N4-Al structures. (USSR) Photoconductivity is investigated in AI-Si,N,-Al structures with semitransparent top electrodes and dielectric films with thickness 100 to 500 A prepared by the ion-reactive method. The influence of space charge on current passage through the structures is studied. A V Baranov and L A Troyan, Zzv VUZ Fiz, No 9, 1973, 151-153 (in Russian).
deposition of epitaxial films is considered. A general theory of transport in gas phase and thermodynamic features of the system SCH-Cl are discussed. The coefficients of mass transport in pure hydrogen and SiCI, + H2 mixture are evaluated in dependence on temperature and composition of mixture. W J Riedl, Krist und Techn, 7 (9), 1972,981-997.
30 of amorphous films of silicon nitride at ion bombardment with subsequent annealing. (USSR) Using the method of electron diffraction, structural changes in silicon nitride films are investigated at bombardment by Ar, P and B ions and subsequent annealing. It is found that polycrystalline phase alpha-&N, is formed as a result. P V Pavlov et al, Kristallograf, 18 (3), 1973, 609-613 (in Russian). 983. Crystallization
30 984. Thermal emf in thin films of the BiSb system. (USSR)
Results of investigation of the dependence of thermal emf of thin Bi,Sb, films on film thickness are presented. The examined thin films have been prepared by evaporation in vacuum 1O-5 torr from tungsten boats on glass substrates. V M Svitlichnyy et al, Rep Kharkov Univer, Radiophys, No 2, 1973, 84-86 (in Ukrainian). 985. Electron diffraction investigation vacuum deposition. (USSR)
of In&
30 by
films prepared
Usine the method of electron diffraction, the conditions of formation of In& films with amorphous and crystalline structures are investigated. The In& films have been obtained by sublimation of synthetized In& in vacuum 10v5 torr on freshly cleaved NaCl crystals. The films deposited at room temperature possess the amorphous structure. At substrate temperatures 100 to 400°C a transition to tetragonal structure takes place. R B Shafizade et al, Kristallogruf, 18 (3), 1973, 660-661 (in Russian). 30 986. Investigation of molecular composition of vapours and structure of condensate at evaporation of some arsenic chalcogenides by laser radiation. (USSR)
(USSR) Structure, electrical conductivity, thermal emf and the forbidden energy band width are investigated in thin films of TlSbS2 with thickness of 1 pm, prepared by thermal evaporation in vacuum 5 x 10m5 torr from quartz crucibles on glass and mica substrates. Amorphous, polycrystalline and textured films have been obtained in dependence on preparation conditions. L P Zozulya et al, Zzv VUZ Fiz, No 9, 1973, 37-40 (in Russian).
Using a mass spectrometric method, it is found that AS&, As2Se3 and AsSe evaporate predominantly as multi-atom molecules under the action of laser radiation. The structure of condensed amorphous films is different. As& and AsSe possess crystal-like structure while As2Se3 consists of atomic chains. The obtained results show that the molecular composition of vapours of AS& As2Se3 and AsSe considerably less influences the kinetics of formation of amorphous films than the process of interatomic interactions on substrate surface. Yu G Poltavtsev et al, Ukr Fir Zh, 18 (5), 1973, 752-755 (in Russian).
30 980. Regularities of formation of structure and properties of films prepared by vacuum evaporation of alloys based on copper. (USSR)
987.
979. Structure
and some electro-physical
properties
30 of TISh!% films.
Regularities of formation of structure and electrical resistance of thin films prepared by vacuum evaporation of alloys based on copper are investigated in an experimental set-up. Influence of a previously deposited underlayer, film thickness and nonuniformity of distribution of alloying elements in the film depth on structure of electrical resistance of the films is determined. A M Korolkov et al, Fir Khim Obrub Mater, No 3, 1973, 58-61 (in
30 Heat-sensitive
thin films prepared
by evaporation
in vacuum. (Poland) Preparation of thin heat-sensitive films of TiO, by evaporation in vacuum is described. Volt-ampere, temperature and optical characteristics of the films are measured. A Hejduk and E Szretek, Pr Nuuk Znst Technol Elektron PWr, No 9, 1973, 55-68 (in Polish). Measurement
of Hall voltage
in thin-film
Russian).
988.
30 981. On temperature and velocity of metallic particles emitted from an evaporator into vacuum. (USSR)
(Poland) An experimental arrangement for measurement thin films of Ti + SiO cermets with low mobility and prepared by evaporation of sintered Ti + described. L Golonka, Pr Nuuk Znst Technol Elektron PWr,
The uroblem of cooling of an aluminium droplet during its flight from-an evaporator toa substrate in vacuum is considered. It has been calculated that the particles with diameter smaller than 2 x 10m4 cm can reach the substrate in both liquid and solid state. The particles with diameter higher than 2 x 10e4 torr can reach the substrate only in the liquid state. A A Khoromenko, Computer Systems, ColI, No 52, Novosibirsk 1972, 177-l 79 (in Russian). 30 982. Thermodynamic approach to diffusion-controlled epitaxial silicon deposition in flow system of SiCI, + Hz mixtures. (Germany)
Thermodynamic
approach
to the diffusion-controlled
process
of
of Ti02
30 Ti + SiO cermets.
of Hall voltage in of charge carriers SiO in vacuum is No 9, 1973, 81-88
(in Polish). 30 989. The role of electronic processes in the mechanisms of evaporation and formation of composition of binary semiconductor compounds with ionic bond. (USSR)
The theory of evaporation of binary ionic crystals in vacuum is considered at absence of thermodynamic equilibrium between solid and vapour phases. The theory is based on the assumption that the determining process of evaporation is formed by neutralization by 323
9775. Relation between electro-physical sire-quantized InSb illms. (USSR)
properties
and structure
30 of
Electric conductivity and the Hall coefficient of size-quantized InSb films are investigated in the temperature interval 77 to 400°K. The InSb films with thickness of 200 to 2000 8, have been prepared by pulsed evaporation in vacuum 10m5 torr on freshly cleaved mica substrates. Both polycrystalline and textured films were obtained. V N Molin et al, Fir T&h Polup, 6 (8), 1972, 1447-1451 (in Russian). 30 976. Determination of wettability of substrates by island vacuum condensates. (USSR) The contact angle of wetting of glass, NaCl and mica cleavages by island condensates of sulphur is investigated in vacuum 10e5 torr. Sulphur condensation proceeds according to the mechanism vapour -liquid phase at the conditions used. Possibility of utilization of results of such investigations for quantitative description of the processes of nucleus formation in real conditions is shown. L S Palatnik et al, Zavod L ab, 39 (9), 1973, 1098-l 100 (in Russian). 30 977. Character of spontaneous deformation in barium titanate vacuum condensates. (USSR) The character of spontaneous deformation in barium titanate vacuum condensates with thickness of 200 to 5000 8, is investigated in connection with their ferro-electric properties. The barium titanate films have been prepared by thermal discrete evaporation. Yu Ya Tomashpolskiy and M A Sevostyanov, Fir Tverd Telu, 15 (9), 1973, 284&2842 (in Russian). 30 978. The influence of space charge on electrical conductivity of AlSi3N4-Al structures. (USSR) Photoconductivity is investigated in AI-Si,N,-Al structures with semitransparent top electrodes and dielectric films with thickness 100 to 500 A prepared by the ion-reactive method. The influence of space charge on current passage through the structures is studied. A V Baranov and L A Troyan, Zzv VUZ Fiz, No 9, 1973, 151-153 (in Russian).
deposition of epitaxial films is considered. A general theory of transport in gas phase and thermodynamic features of the system SCH-Cl are discussed. The coefficients of mass transport in pure hydrogen and SiCI, + H2 mixture are evaluated in dependence on temperature and composition of mixture. W J Riedl, Krist und Techn, 7 (9), 1972,981-997.
30 of amorphous films of silicon nitride at ion bombardment with subsequent annealing. (USSR) Using the method of electron diffraction, structural changes in silicon nitride films are investigated at bombardment by Ar, P and B ions and subsequent annealing. It is found that polycrystalline phase alpha-&N, is formed as a result. P V Pavlov et al, Kristallograf, 18 (3), 1973, 609-613 (in Russian). 983. Crystallization
30 984. Thermal emf in thin films of the BiSb system. (USSR)
Results of investigation of the dependence of thermal emf of thin Bi,Sb, films on film thickness are presented. The examined thin films have been prepared by evaporation in vacuum 1O-5 torr from tungsten boats on glass substrates. V M Svitlichnyy et al, Rep Kharkov Univer, Radiophys, No 2, 1973, 84-86 (in Ukrainian). 985. Electron diffraction investigation vacuum deposition. (USSR)
of In&
30 by
films prepared
Usine the method of electron diffraction, the conditions of formation of In& films with amorphous and crystalline structures are investigated. The In& films have been obtained by sublimation of synthetized In& in vacuum 10v5 torr on freshly cleaved NaCl crystals. The films deposited at room temperature possess the amorphous structure. At substrate temperatures 100 to 400°C a transition to tetragonal structure takes place. R B Shafizade et al, Kristallogruf, 18 (3), 1973, 660-661 (in Russian). 30 986. Investigation of molecular composition of vapours and structure of condensate at evaporation of some arsenic chalcogenides by laser radiation. (USSR)
(USSR) Structure, electrical conductivity, thermal emf and the forbidden energy band width are investigated in thin films of TlSbS2 with thickness of 1 pm, prepared by thermal evaporation in vacuum 5 x 10m5 torr from quartz crucibles on glass and mica substrates. Amorphous, polycrystalline and textured films have been obtained in dependence on preparation conditions. L P Zozulya et al, Zzv VUZ Fiz, No 9, 1973, 37-40 (in Russian).
Using a mass spectrometric method, it is found that AS&, As2Se3 and AsSe evaporate predominantly as multi-atom molecules under the action of laser radiation. The structure of condensed amorphous films is different. As& and AsSe possess crystal-like structure while As2Se3 consists of atomic chains. The obtained results show that the molecular composition of vapours of AS& As2Se3 and AsSe considerably less influences the kinetics of formation of amorphous films than the process of interatomic interactions on substrate surface. Yu G Poltavtsev et al, Ukr Fir Zh, 18 (5), 1973, 752-755 (in Russian).
30 980. Regularities of formation of structure and properties of films prepared by vacuum evaporation of alloys based on copper. (USSR)
987.
979. Structure
and some electro-physical
properties
30 of TISh!% films.
Regularities of formation of structure and electrical resistance of thin films prepared by vacuum evaporation of alloys based on copper are investigated in an experimental set-up. Influence of a previously deposited underlayer, film thickness and nonuniformity of distribution of alloying elements in the film depth on structure of electrical resistance of the films is determined. A M Korolkov et al, Fir Khim Obrub Mater, No 3, 1973, 58-61 (in
30 Heat-sensitive
thin films prepared
by evaporation
in vacuum. (Poland) Preparation of thin heat-sensitive films of TiO, by evaporation in vacuum is described. Volt-ampere, temperature and optical characteristics of the films are measured. A Hejduk and E Szretek, Pr Nuuk Znst Technol Elektron PWr, No 9, 1973, 55-68 (in Polish). Measurement
of Hall voltage
in thin-film
Russian).
988.
30 981. On temperature and velocity of metallic particles emitted from an evaporator into vacuum. (USSR)
(Poland) An experimental arrangement for measurement thin films of Ti + SiO cermets with low mobility and prepared by evaporation of sintered Ti + described. L Golonka, Pr Nuuk Znst Technol Elektron PWr,
The uroblem of cooling of an aluminium droplet during its flight from-an evaporator toa substrate in vacuum is considered. It has been calculated that the particles with diameter smaller than 2 x 10m4 cm can reach the substrate in both liquid and solid state. The particles with diameter higher than 2 x 10e4 torr can reach the substrate only in the liquid state. A A Khoromenko, Computer Systems, ColI, No 52, Novosibirsk 1972, 177-l 79 (in Russian). 30 982. Thermodynamic approach to diffusion-controlled epitaxial silicon deposition in flow system of SiCI, + Hz mixtures. (Germany)
Thermodynamic
approach
to the diffusion-controlled
process
of
of Ti02
30 Ti + SiO cermets.
of Hall voltage in of charge carriers SiO in vacuum is No 9, 1973, 81-88
(in Polish). 30 989. The role of electronic processes in the mechanisms of evaporation and formation of composition of binary semiconductor compounds with ionic bond. (USSR)
The theory of evaporation of binary ionic crystals in vacuum is considered at absence of thermodynamic equilibrium between solid and vapour phases. The theory is based on the assumption that the determining process of evaporation is formed by neutralization by 323