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On formation of structure of films of some semiconductors at laser evaporation
Classified abstracts 1072-l
084
1 x 1O-6 torr on glass substrates kept at different temperatures. The anisotropy was found to increase with increasing surface roughness. H Ihring and H Gartner, Whys Star Sol (a), 26 (I), 1974, I IS-125 (in German). 30 1072. The amorphous structure of the Ge-Se system. (Germany) The radial distribution functions of evaporated Ge-Se alloys was investigated by the electron diffraction method. The examined thin films have been prepared by evaporation of alloys from a tungsten filament in a vacuum of 1O-6 torr onto glass substrates at room temperature. The compsition dependence of interatomic distances and co-ordination numbers are reported over the whole range of composition of the Ge-Se system. (Japan) 0 Vemura et al., P& Stat Sol (a), 26 (l), 1974,99-103. 30 1073. Mass-spectrometric investigation of conditions of formation of amorphous films of semiconductors at condensation from vapour phase. (USSR) Using a mass spectrometer, composition of vapour phase at vacuum evaporation of semiconductor materials with various thermodynamic properties and structure is analysed. Structure of the obtained films is investigated. V P Zakharov and I M Protas, Dokl AN SSR, 215 (3), 1974,562-564 (in Russian). 30 1074. Conductivity of GaAs thin Alms obtained by sputtering. (Poland) Polycrystalline and amorphous thin films of GaAs with thickness of 2 pm have been prepared by cathodic sputtering of polycrystalline GaAs target in pure argon at a pressure of 10-l torr. Temperature dependence of electrical conductivity of the prepared GaAs films is investigated. Experimental results are discussed. A Czapla and L Szczyrbowski, Acta Phys Pal, A45 (l), 1974, 193-195. 30 1075. Electric and photoelectric properties of PbBOd minium films. (USSR) A complex investigation of temperature dependences of dark conkinetics, photoconductivity, thermodictivity, at illumination, stimulated currents and quantum-ampere characteristics of highohmic PbJOil thin films has been carried out in a vacuum of 1O-3 to lo-“ torr and in the temperature interval of 98 to 350 K. V A Izvozchikov et al, Phys Electronics, Coil, Vol3, Leningrad 1974, 15-22 (in Russian). 30
Formation of SiOz films in oxygen flow with gaseous HCI impurity. (USSR) The process of oxidation of Si (111) at 1060°C in oxygen flow with gaseous HCI impurity is described. The obtained M-I-S structure has lower charge at Si-SiO, interface than in the case of conventional oxidation at the same conditions. A Aulas and A Machikenas, Phys Electronics, Coil, Vol 2, Kaunas 1076.
1973, 128-131
(in Russian).
30 1077. Complex electron scattering effects in C&Se thin films. (USSR)
Using the method of electron diffraction, the processes of nucleation and growth of CuzSe films on single crystal substrates of NaCl, KC1 and KBr are investigated. A high number of electron reflexes connected with two-dimensional diffraction and electron scattering on boundaries of twins is found. A G Mikolaychuk et al, Phys Electronics, Rep Interdisc Scient-Tech Coil, No 7, 1974, 59-62 (in Russian).
30 1079. The influence of physico-technological conditions of preparation of thin films of Tl-Te system phases in the region of less than 50 at % Te on their structure. (USSR) Using X-ray and optical microscopy methods, the influence of evaporation rate and substrate temperature on structural state of phases in thin films of the system Tl-Te is investigated. The examined films have been prepared by deposition in vacuum from linear evaporators. It is found that at substrate temperature 170 and 250°C the T15Te3 films are obtained, at 195 and 250”C-TlTe, and at 120°C T1,Te3 and TlTe. Yu Okunis and V Tolutis, Phys Electron, Coil, Vol 2, Kaunas 1973, 219-221
(in Russian).
30 1080. On formation of structure of films of some semiconductors at
laser evaporation. (USSR) The relation between the molecular composition of vapours and the structure of films, obtained by laser evaporation of compounds type A”‘BV (GaAs, GaP) and A’l’ZBVIJ (AS&, As,Ses and AsSe), is investigated. It is found that vapours from GaAs and GaP contain particles composed of 1 to 4 atoms, the multi-atom complexes of atoms of various kind have been observed only in the vapours from GaAs. Electron-diffraction investigations show that GaAs films contain disperse crystals and in the GaP films besides crystals the regions of amorphous phosphorus and gallium exist. It is concluded that presence of multi-atom complexes containing atoms of various kind in vapours from GaAs results in formation of disperse crystals on substrate. Multi-atom particles containing atoms of various kind from considerable portion of vapours from A’lrzBVIJ compounds. Mass spectra of these vapours are similar but the structure of the films is different. This situation is explained by various mechanism of formation of structure of films on substrates. Yu G Poltavtsev et al, Semicond Technol and Microelestron, Republ Interdiscipl Coil, No 16, 1974, 62-65 (in Russian). 30 1081. Investigation of deformation of surface of Se and Ge films by the
method of proton backscattering. (USSR) It is shown that the technique of 500 keV proton backscattering can be used for monitoring of the state of surface of semiconductor crystals after polishing by various methods. The depth of deformed layer can be determined from the energy spectrum of particles scattered in a large angle if the direction of primary beam coincides with low-index crystallographic direction. Interaction takes place only at atoms displaced more than 0.2 A from lattice nodes. V P Alekhin et al, Rep of 5th All-Union Conf of Phys Interact of Charged Part (in Russian).
with Single
Crysr, Moscow University
1974, 386-391 30
Apparatus and methods for investigation of the process of vacuum evaporation and condensation. (USSR) Possibilities of investigation of the process of vacuum evaporation and condensation by the mathematical methods of experiment planing are considered. Sensors and instruments for monitoring the process parameters are proposed. G T Mishin, Rep of Moscow Inst of Electron Machine building, No 29, 1973, 172-176 (in Russian). 1082.
30 1083. A contactless method for measurement of the coefficient of heat
aluha-Af&e. (Roumania) Using the meihod of electron diffraction, the conditions of preparation of eoitaxial thin films of aloha-A&e are investigated. The 400 to 800 A’thin films have been prepared-by successive evaporation of Ag and Se in a vacuum of 10m5 torr on KC1 and NaCl substrates heated to 25 to 250°C. It is found that polycrystalline films are obtained at substrate temperature of 25-18O”C, epitaxial rhombic at 200°C and at 230 to 250°C transition to cubic phase occurs. L Constantinescu et al, Rev Roum Phys, 18 (lb), 1973, 1197-1201 (in
transfer of thin films. (USSR) A method for measurement of the rate of heating or cooling of thin films is described. A light beam is used for determination of film temperature. V V Kukharev et al, Solid-state Radio-electron, Co/l, Voronezh 1973, 142-148 (in Russianj. 30 1084. Investigation of radiation action on properties of Si and Ge films with anomalously high photo-voltage. (USSR) The influence of X-radiation, electron and ion bombardment on ohotoelectric arooerties of Si and Ge films with anomalously high bhotovoltage is investigated. It is found that X-irradiation in v&urn considerably decreases the generated photovoltage. At ion bombardment an increase in generated photovoltage is observed in thin portions of the films. _ U A Arifov et al, Phys Phenomena at Bombard of Solids by Atomic
French).
Part, Coil, Vol2, Fan.Tashkent
30 1078. Investigation of conditions of preparation of oriented films of
342
1974, 24-31 (in Russian).
084
1 x 1O-6 torr on glass substrates kept at different temperatures. The anisotropy was found to increase with increasing surface roughness. H Ihring and H Gartner, Whys Star Sol (a), 26 (I), 1974, I IS-125 (in German). 30 1072. The amorphous structure of the Ge-Se system. (Germany) The radial distribution functions of evaporated Ge-Se alloys was investigated by the electron diffraction method. The examined thin films have been prepared by evaporation of alloys from a tungsten filament in a vacuum of 1O-6 torr onto glass substrates at room temperature. The compsition dependence of interatomic distances and co-ordination numbers are reported over the whole range of composition of the Ge-Se system. (Japan) 0 Vemura et al., P& Stat Sol (a), 26 (l), 1974,99-103. 30 1073. Mass-spectrometric investigation of conditions of formation of amorphous films of semiconductors at condensation from vapour phase. (USSR) Using a mass spectrometer, composition of vapour phase at vacuum evaporation of semiconductor materials with various thermodynamic properties and structure is analysed. Structure of the obtained films is investigated. V P Zakharov and I M Protas, Dokl AN SSR, 215 (3), 1974,562-564 (in Russian). 30 1074. Conductivity of GaAs thin Alms obtained by sputtering. (Poland) Polycrystalline and amorphous thin films of GaAs with thickness of 2 pm have been prepared by cathodic sputtering of polycrystalline GaAs target in pure argon at a pressure of 10-l torr. Temperature dependence of electrical conductivity of the prepared GaAs films is investigated. Experimental results are discussed. A Czapla and L Szczyrbowski, Acta Phys Pal, A45 (l), 1974, 193-195. 30 1075. Electric and photoelectric properties of PbBOd minium films. (USSR) A complex investigation of temperature dependences of dark conkinetics, photoconductivity, thermodictivity, at illumination, stimulated currents and quantum-ampere characteristics of highohmic PbJOil thin films has been carried out in a vacuum of 1O-3 to lo-“ torr and in the temperature interval of 98 to 350 K. V A Izvozchikov et al, Phys Electronics, Coil, Vol3, Leningrad 1974, 15-22 (in Russian). 30
Formation of SiOz films in oxygen flow with gaseous HCI impurity. (USSR) The process of oxidation of Si (111) at 1060°C in oxygen flow with gaseous HCI impurity is described. The obtained M-I-S structure has lower charge at Si-SiO, interface than in the case of conventional oxidation at the same conditions. A Aulas and A Machikenas, Phys Electronics, Coil, Vol 2, Kaunas 1076.
1973, 128-131
(in Russian).
30 1077. Complex electron scattering effects in C&Se thin films. (USSR)
Using the method of electron diffraction, the processes of nucleation and growth of CuzSe films on single crystal substrates of NaCl, KC1 and KBr are investigated. A high number of electron reflexes connected with two-dimensional diffraction and electron scattering on boundaries of twins is found. A G Mikolaychuk et al, Phys Electronics, Rep Interdisc Scient-Tech Coil, No 7, 1974, 59-62 (in Russian).
30 1079. The influence of physico-technological conditions of preparation of thin films of Tl-Te system phases in the region of less than 50 at % Te on their structure. (USSR) Using X-ray and optical microscopy methods, the influence of evaporation rate and substrate temperature on structural state of phases in thin films of the system Tl-Te is investigated. The examined films have been prepared by deposition in vacuum from linear evaporators. It is found that at substrate temperature 170 and 250°C the T15Te3 films are obtained, at 195 and 250”C-TlTe, and at 120°C T1,Te3 and TlTe. Yu Okunis and V Tolutis, Phys Electron, Coil, Vol 2, Kaunas 1973, 219-221
(in Russian).
30 1080. On formation of structure of films of some semiconductors at
laser evaporation. (USSR) The relation between the molecular composition of vapours and the structure of films, obtained by laser evaporation of compounds type A”‘BV (GaAs, GaP) and A’l’ZBVIJ (AS&, As,Ses and AsSe), is investigated. It is found that vapours from GaAs and GaP contain particles composed of 1 to 4 atoms, the multi-atom complexes of atoms of various kind have been observed only in the vapours from GaAs. Electron-diffraction investigations show that GaAs films contain disperse crystals and in the GaP films besides crystals the regions of amorphous phosphorus and gallium exist. It is concluded that presence of multi-atom complexes containing atoms of various kind in vapours from GaAs results in formation of disperse crystals on substrate. Multi-atom particles containing atoms of various kind from considerable portion of vapours from A’lrzBVIJ compounds. Mass spectra of these vapours are similar but the structure of the films is different. This situation is explained by various mechanism of formation of structure of films on substrates. Yu G Poltavtsev et al, Semicond Technol and Microelestron, Republ Interdiscipl Coil, No 16, 1974, 62-65 (in Russian). 30 1081. Investigation of deformation of surface of Se and Ge films by the
method of proton backscattering. (USSR) It is shown that the technique of 500 keV proton backscattering can be used for monitoring of the state of surface of semiconductor crystals after polishing by various methods. The depth of deformed layer can be determined from the energy spectrum of particles scattered in a large angle if the direction of primary beam coincides with low-index crystallographic direction. Interaction takes place only at atoms displaced more than 0.2 A from lattice nodes. V P Alekhin et al, Rep of 5th All-Union Conf of Phys Interact of Charged Part (in Russian).
with Single
Crysr, Moscow University
1974, 386-391 30
Apparatus and methods for investigation of the process of vacuum evaporation and condensation. (USSR) Possibilities of investigation of the process of vacuum evaporation and condensation by the mathematical methods of experiment planing are considered. Sensors and instruments for monitoring the process parameters are proposed. G T Mishin, Rep of Moscow Inst of Electron Machine building, No 29, 1973, 172-176 (in Russian). 1082.
30 1083. A contactless method for measurement of the coefficient of heat
aluha-Af&e. (Roumania) Using the meihod of electron diffraction, the conditions of preparation of eoitaxial thin films of aloha-A&e are investigated. The 400 to 800 A’thin films have been prepared-by successive evaporation of Ag and Se in a vacuum of 10m5 torr on KC1 and NaCl substrates heated to 25 to 250°C. It is found that polycrystalline films are obtained at substrate temperature of 25-18O”C, epitaxial rhombic at 200°C and at 230 to 250°C transition to cubic phase occurs. L Constantinescu et al, Rev Roum Phys, 18 (lb), 1973, 1197-1201 (in
transfer of thin films. (USSR) A method for measurement of the rate of heating or cooling of thin films is described. A light beam is used for determination of film temperature. V V Kukharev et al, Solid-state Radio-electron, Co/l, Voronezh 1973, 142-148 (in Russianj. 30 1084. Investigation of radiation action on properties of Si and Ge films with anomalously high photo-voltage. (USSR) The influence of X-radiation, electron and ion bombardment on ohotoelectric arooerties of Si and Ge films with anomalously high bhotovoltage is investigated. It is found that X-irradiation in v&urn considerably decreases the generated photovoltage. At ion bombardment an increase in generated photovoltage is observed in thin portions of the films. _ U A Arifov et al, Phys Phenomena at Bombard of Solids by Atomic
French).
Part, Coil, Vol2, Fan.Tashkent
30 1078. Investigation of conditions of preparation of oriented films of
342
1974, 24-31 (in Russian).