Absence of peak mobility in silicon MOS systems

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IMPURITY-SHIFTED INTERSUBBAND TRANSITIONS SCREENING IN Na+-DRIFTED Si MOSFETS Evan GLASER. R. CZAPUTA * and B.D. McCOMBE Stare Unrrwvrrv of Ntw Yorh(11HuJJdo.

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RESONANT TUNNELING VIA LOCALIZED IN THIN MOS STRUCTURES A. HARTSTEIN IBM

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