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Apparatus for monitoring film thickness in the course of vacuum deposition
Classified abstracts
1048-l 058
the stress was found to decrease with increasing thickness at various substrate temperatures. The effect of higher substrate temperatures is just to change from large compressive stress to smaller compressive stress and finally into tension. For example, the stress in a 5ooO 8, film decreases from 1.6 x 1O’Odyn/cmz in compression to 5 x IO9 dyn/cm* in tension as substrate temperature increases from 370 to 850°C. Generally, no gross difference was found for films deposited on SiOZ, AI,03, or S&N, at higher substrate temperatures. As a function of deposition rate, the stress can be described in three regions. The stress was found to be small and relatively constant in the low-deposition-rate region. However, as the deposition rate.increased to the transition region, a sharp stress increase was found. Finally, above a critical deposition rate, the large internal stress remains constant again. By measuring the stress and characterizing the microstructure of the film, it is concluded that the grain size is the dominant factor determining the stress. These experimental results are discussed in light of the grain boundary relaxation model of Finegan and Hoffman and annealing of disorder proposed by Klokholm and Berry. R C Sun et al, J ApplPhys, 46 (I), 197.5, 112-l 17.
Any particles failing to evaporate traverse a different tra.jectory and are collected by the receiver. F V Ur’yash and S N Vladimirov, Soviet Patent, c/ass C 23 c, 13112,No 396450, claimed 3 May 1971, publd 17 January 1974 (in Russian). 30
1052. Device for depositing coatings in vacno. (USSR) An improved form of apparatus for the vacuum deposition of protective coatings is described. The apparatus consists of a conventional chamber containing an evaporator and two drums placed coaxially on the main drive shaft; these drums have independent drives, and the inner one is furnished with rotary substrate holders connected by a drive to the control desk, and also to the pumping system. The geometry of the system facilitates efficient cleaning of the substrate surface with a glow discharge immediately before deposition of the coating begins. Any deterioration which might occur in the brief interval between these operations is inhibited by the close disposition of the two drums. Kh M Kaushanskii et al, Souiet Patent, class C 23 c, 13/O& No 347388, claimed 2 November
1970, publd 14 June 1973 (in Russian). 30
30 1048. Effect of An nucleation centres and deposition rate on crystal-
1053. Apparatus for the deposition of coatings in vacua. (USSR).
linity and electronic properties of evaporated Te films. (USA) The effect of Au nucleation sites, deposition rates, and the film thickness on the crystallinity and electronic properties of evaporated Te films has been investigated. It has been found that to obtain Iargegrain Te films there exists an optimum condition in the coating ratio of Au nucleation sites and the film thickness of Te, and that a fast deposition rate of Te results generally in large-grain Te films with preferred orientation. The best films obtained have shown a grain size of 20-30 pm dia. with the c axis parallel to the substrate and a Hall mobility of 170 cm* V- ’ s- ‘. (Japan) K Oknyama et al, J Appl Phys, 46 (1) 1975, 105-I 1I. 30 1049. Detection of low-mass impurities in thin films using MeV heavy-ion elastic scattering and coincidence detection techniques. (USA) The usefulness of heavy-ion forward scattering coincidence measurements is demonstrated for the detection of low-mass impurity atoms in thin self-supporting nickel and gold films. Oxygen beams of 15-20 MeV have been used to detect I60 and 24M~ atoms in nickel films -200 pg cm-2 thick and chlorine beams of 40 MeV to detect 39K and 63Cu atoms in gold films = 350 pg cme2 thick. The detection sensitivity and mass discrimination are functions of the angle of acceptance of the detectors. lmpurity atom concentrations of the order IO“’ atoms cm-’ are detectable. Depth information is available from the energy spectra. Possible application of the detection technique to the determination of the lattice site of low-mass impurities, by channeling in thin single crystalls, is considered, (Canada) J A Moore et al, J ApplPhys, 46 (I), 1975, 52-61. 30 1050. Apparatus for monitoring film thickness in the course of vacuum deposition. (USSR) An improved device for monitoring the thickness of metallizing or protective films during their vacuum evaporation and deposition is described, its aim being to increase the range of existing systems and to facilitate automatic recording. To this end, a diaphragm is placed over the control substrate; it contains an aperture through which the material being deposited is passed and an executive mechanism which moves the diaphragm to another part when a pre-determined thickness (established by reference to interference patterns) is reached. This is the basic system; it may also be supplemented by visible or audible signals to indicate when the desired point has been achieved, and the position at any given moment may be automatically recorded. L N Vysochin and V V Kontsur, Soviet Patent, class G 01 b, I l/06,
A method of improving vacuum-deposited coatings by slight modifications to existing apparatus is described. The electromagnetic valves used in the evaporation and deposition equipment are connected to the atmosphere through specially-designed filtering chambers, and between the electromagnetic valves and the final working chambers auxiliary expansion chambers are mounted. This arrangement improves the reliability of the sequence of operations normally required in vacuum deposition and prevents undue contamination from reaching the working parts. V L Troitskii et al, Soviet Patent, class C 23 c, 13/O& No 410138,
No 359509,
claimed
31 July 1970, publd 3 January
1973 (in Russian). 30
1051. Apparatus for depositing coatings in vacua. (USSR) An improved device for the deposition of metallic or other protective coatings i/z LWNOis described. The evaporator is made in the form of two plates connected to a high-voltage source mounted vertically and forming a slit for the passage of the particles to be deposited; it also contains a receiver for the harmless removal of excess material. After the plates have been heated an alternating electric field is created between them. Most of the particles passing through the slit reach temperatures high enollgh to be evaporated and pass on to the target. 340
claimed 22 February
1972, publd 24 April 1974 (in Russian). 30
Crystallization kinetics of amorphous selenium condensates. (USSR) The results of investigation of isothermal kinetics of low-temperature crystallization of amorphous selenium films, condensed in vacuum at various conditions, are presented. Yu E Gordienko and V L Kostenko, KristaUograf, 19 (2), 1974,352-355 (irz Russian). 1054.
30
Electron-microscopical investigation of crystallization of evaporated selenium lilms. (USSR) Using the method of carbon replication, crystallization of evaporated amorohous selenium films is investigated at temperatures ranging from b0 to 170°C. F S Sultamov et al, Phys Prop of Se and Se-devices, CON, Ehn Baku 1055.
1974, 208-213
(in Russian).
1056. Some electric and photoelectric properties of TIIn(& - Sri”, films. (USSR) Optical, dielectric and photoelectric properties of TII& and TIInSez films, prepared by thermal evaporation in a vacuum of 5 x 10e5 torr on glass and mica substrates, are investigated. Behaviour of films in high electric films is also studied. L I Demidova et al, Scient Rep of Gorkov University, No 167, 1973, 70-74 (in Russian). 30 1057. The influence of metallic electrodes on characteristics of MIM
structure. (USSR) The influence of nature of upper electrode metal on processes of formation of negative resistance characteristics in thin GeO and si0 films, prepared by thermal evaporation in vacuum, is investigated. The voltampere characteristics of examined samples are investigated both in air and in vacuum. M M Nekrasov et al. Vestn Kiev Politekh Inst. Ser Radioelektron, No 11, 1974, 71-76 (in &Sian). 30 1058. Investigation of surface states in the silicon-alnminium fluoride interface. (USSR) Thin films of aluminium fluoride with thickness of 0.1 to 0.15 pm have been deposited by thermal evaporation in vacuum on (111) silicon substrates. Upper and lower electrodes have been deposited by A evaporation. Data on effective charge in dielectric and spectral
1048-l 058
the stress was found to decrease with increasing thickness at various substrate temperatures. The effect of higher substrate temperatures is just to change from large compressive stress to smaller compressive stress and finally into tension. For example, the stress in a 5ooO 8, film decreases from 1.6 x 1O’Odyn/cmz in compression to 5 x IO9 dyn/cm* in tension as substrate temperature increases from 370 to 850°C. Generally, no gross difference was found for films deposited on SiOZ, AI,03, or S&N, at higher substrate temperatures. As a function of deposition rate, the stress can be described in three regions. The stress was found to be small and relatively constant in the low-deposition-rate region. However, as the deposition rate.increased to the transition region, a sharp stress increase was found. Finally, above a critical deposition rate, the large internal stress remains constant again. By measuring the stress and characterizing the microstructure of the film, it is concluded that the grain size is the dominant factor determining the stress. These experimental results are discussed in light of the grain boundary relaxation model of Finegan and Hoffman and annealing of disorder proposed by Klokholm and Berry. R C Sun et al, J ApplPhys, 46 (I), 197.5, 112-l 17.
Any particles failing to evaporate traverse a different tra.jectory and are collected by the receiver. F V Ur’yash and S N Vladimirov, Soviet Patent, c/ass C 23 c, 13112,No 396450, claimed 3 May 1971, publd 17 January 1974 (in Russian). 30
1052. Device for depositing coatings in vacno. (USSR) An improved form of apparatus for the vacuum deposition of protective coatings is described. The apparatus consists of a conventional chamber containing an evaporator and two drums placed coaxially on the main drive shaft; these drums have independent drives, and the inner one is furnished with rotary substrate holders connected by a drive to the control desk, and also to the pumping system. The geometry of the system facilitates efficient cleaning of the substrate surface with a glow discharge immediately before deposition of the coating begins. Any deterioration which might occur in the brief interval between these operations is inhibited by the close disposition of the two drums. Kh M Kaushanskii et al, Souiet Patent, class C 23 c, 13/O& No 347388, claimed 2 November
1970, publd 14 June 1973 (in Russian). 30
30 1048. Effect of An nucleation centres and deposition rate on crystal-
1053. Apparatus for the deposition of coatings in vacua. (USSR).
linity and electronic properties of evaporated Te films. (USA) The effect of Au nucleation sites, deposition rates, and the film thickness on the crystallinity and electronic properties of evaporated Te films has been investigated. It has been found that to obtain Iargegrain Te films there exists an optimum condition in the coating ratio of Au nucleation sites and the film thickness of Te, and that a fast deposition rate of Te results generally in large-grain Te films with preferred orientation. The best films obtained have shown a grain size of 20-30 pm dia. with the c axis parallel to the substrate and a Hall mobility of 170 cm* V- ’ s- ‘. (Japan) K Oknyama et al, J Appl Phys, 46 (1) 1975, 105-I 1I. 30 1049. Detection of low-mass impurities in thin films using MeV heavy-ion elastic scattering and coincidence detection techniques. (USA) The usefulness of heavy-ion forward scattering coincidence measurements is demonstrated for the detection of low-mass impurity atoms in thin self-supporting nickel and gold films. Oxygen beams of 15-20 MeV have been used to detect I60 and 24M~ atoms in nickel films -200 pg cm-2 thick and chlorine beams of 40 MeV to detect 39K and 63Cu atoms in gold films = 350 pg cme2 thick. The detection sensitivity and mass discrimination are functions of the angle of acceptance of the detectors. lmpurity atom concentrations of the order IO“’ atoms cm-’ are detectable. Depth information is available from the energy spectra. Possible application of the detection technique to the determination of the lattice site of low-mass impurities, by channeling in thin single crystalls, is considered, (Canada) J A Moore et al, J ApplPhys, 46 (I), 1975, 52-61. 30 1050. Apparatus for monitoring film thickness in the course of vacuum deposition. (USSR) An improved device for monitoring the thickness of metallizing or protective films during their vacuum evaporation and deposition is described, its aim being to increase the range of existing systems and to facilitate automatic recording. To this end, a diaphragm is placed over the control substrate; it contains an aperture through which the material being deposited is passed and an executive mechanism which moves the diaphragm to another part when a pre-determined thickness (established by reference to interference patterns) is reached. This is the basic system; it may also be supplemented by visible or audible signals to indicate when the desired point has been achieved, and the position at any given moment may be automatically recorded. L N Vysochin and V V Kontsur, Soviet Patent, class G 01 b, I l/06,
A method of improving vacuum-deposited coatings by slight modifications to existing apparatus is described. The electromagnetic valves used in the evaporation and deposition equipment are connected to the atmosphere through specially-designed filtering chambers, and between the electromagnetic valves and the final working chambers auxiliary expansion chambers are mounted. This arrangement improves the reliability of the sequence of operations normally required in vacuum deposition and prevents undue contamination from reaching the working parts. V L Troitskii et al, Soviet Patent, class C 23 c, 13/O& No 410138,
No 359509,
claimed
31 July 1970, publd 3 January
1973 (in Russian). 30
1051. Apparatus for depositing coatings in vacua. (USSR) An improved device for the deposition of metallic or other protective coatings i/z LWNOis described. The evaporator is made in the form of two plates connected to a high-voltage source mounted vertically and forming a slit for the passage of the particles to be deposited; it also contains a receiver for the harmless removal of excess material. After the plates have been heated an alternating electric field is created between them. Most of the particles passing through the slit reach temperatures high enollgh to be evaporated and pass on to the target. 340
claimed 22 February
1972, publd 24 April 1974 (in Russian). 30
Crystallization kinetics of amorphous selenium condensates. (USSR) The results of investigation of isothermal kinetics of low-temperature crystallization of amorphous selenium films, condensed in vacuum at various conditions, are presented. Yu E Gordienko and V L Kostenko, KristaUograf, 19 (2), 1974,352-355 (irz Russian). 1054.
30
Electron-microscopical investigation of crystallization of evaporated selenium lilms. (USSR) Using the method of carbon replication, crystallization of evaporated amorohous selenium films is investigated at temperatures ranging from b0 to 170°C. F S Sultamov et al, Phys Prop of Se and Se-devices, CON, Ehn Baku 1055.
1974, 208-213
(in Russian).
1056. Some electric and photoelectric properties of TIIn(& - Sri”, films. (USSR) Optical, dielectric and photoelectric properties of TII& and TIInSez films, prepared by thermal evaporation in a vacuum of 5 x 10e5 torr on glass and mica substrates, are investigated. Behaviour of films in high electric films is also studied. L I Demidova et al, Scient Rep of Gorkov University, No 167, 1973, 70-74 (in Russian). 30 1057. The influence of metallic electrodes on characteristics of MIM
structure. (USSR) The influence of nature of upper electrode metal on processes of formation of negative resistance characteristics in thin GeO and si0 films, prepared by thermal evaporation in vacuum, is investigated. The voltampere characteristics of examined samples are investigated both in air and in vacuum. M M Nekrasov et al. Vestn Kiev Politekh Inst. Ser Radioelektron, No 11, 1974, 71-76 (in &Sian). 30 1058. Investigation of surface states in the silicon-alnminium fluoride interface. (USSR) Thin films of aluminium fluoride with thickness of 0.1 to 0.15 pm have been deposited by thermal evaporation in vacuum on (111) silicon substrates. Upper and lower electrodes have been deposited by A evaporation. Data on effective charge in dielectric and spectral