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Application of ion beams in film technology
Classified abstracts 65-79
significant number of them travel in straight lines to the anode without collision. They are responsible for almost all of the power input into the anode and can dominate the growth of a thin film on a substrate at the anode. (UK) B N Chapman et al, J Appl Phys, 45 (5), 1974, 2115-2120. 30 65. Formation of PtO films by reactive sputtering. (USA) An oxide phase which is isostructural with PdO has been obtained as a thin film by reactive dc diode sputtering of Pt in argon-oxygen mixtures. Films in which this is the only crystalline phase observed have been prepared; they have a density of 13.5 * 1.0 g/cm3. Theoxide phase is .UIIJLLI”,~ ...“+nLln ar n+ lrnLLiJc’lXu’“.X nm..nrot.,m0 LI”““C or.n.,m J””
30 72. Crystalline structure and chemical composition of thin permalloy films prepared by pulsed laser radiation in the regime of free generation. (USSR) Polycrystalline permalloy films on polished fused quartz have been prepared in a vacuum of 10m4 torr by pulsed ruby laser radiation evaporation. Potential application of laser evaporation of refractory materials for preparation of thin films is shown. U S Urazaliev et al, Piz Khim Obrab Mater, No 4, 1973, 151-154 (i/r Russian). 30 73. Infra-red transmission and reflection spectra of silicon nitride
films prepared in high frequency discharge plasma. (USSR). Infra-red transmission and reflection spectra of amorphous silicon nitride films with thickness of 0.4 to 0.8 pm, prepared in high frequency discharge plasma, are investigated. Yu I Prokhorov et al, Zh Prikl Spektroskop, 19 (3), 1973, 520-523 (in Russian). 30
30 66. The preparation and use of unbacked metal films as filters in the
74. Application of ion beams in film technology. (Germany)
extreme ultraviolet. (USA) Techniques for producing and using unbacked metal films as transmitting filters in the vacuum ultraviolet both for the laboratory and space instrumentation are reviewed. The different characteristics of metals require different techniques in the preparation of the films. The most widely used is the vacuum evaporation methods. The films are removed from the substrate on which they are deposited because
A review of ion beam methods for preparation and treatment of various materials is given. The nitride films have been prepared on Si and Al surfaces by bombardment with nitrogen ions. The methods of ion-beam sputtering and ion-beam etching are considered. U Scheit and 0 Fiedler, Wiss Zeitsch Tech Hochsch Karl Marx Stadt. 14 (5), 1972, 523-529 (in German).
the na~hctnte. LI.L, .,U”.,.IUL”~
I,-,= ...e...J hiohlv Y.”
ahrnrhino “V”YLV.-.D
in -*_ XITV , . T~_IJ~ ihe .--
fi_!p.s ~rp
,J.“._
” - --^
75. Eiectro-nhysicai properties or
MIS
30 structies
gaiiium arsenide-
backed and supported by a frame of some type. A brief description of the optical characteristics of these films is also given. W R Hunter, Physics ofthin films, 7, 1973, 43-l 14. 30 67. Application of cathode pulverization. First part: in the laboratory. (France) Applications of sputtering and associated techniques which are still in the research state are reviewed. Examples are selected from the area of microelectronics, optoelectronics, integrated optics, displays etc. L M Reiber, Vide, 27 (168), 1973, 242-250 (in French). 30 68. Application of cathode pulverization. Second part: in the industry. (France) Sputtering and associated techniques used in the industry are reviewed. The review includes standard fabrication processes applied to integrated hybrid circuits, semiconductor technology, reflecting matin~7 lavers. _________._transnarent ...._r_.~-~~. ~~~~ ~~~Irazor blade coatinas. etc, --I---_~, cnndnctive J Lantaires, Vide, 28 (168) 1973, 250-254 (in French).
Gmm diodes on their parameters. (USSR) Gun diodes, prepared of epitaxial structures of n-n+ type with various doping profiles, are investigated. The doping profiles were determined by the method of measurement of voltage dependences of capacity with gradual removal of layers. Epitaxial films have been grown by gas epitaxy in the system Ga + AsC13 + Hz. A A Barybin et al, Semicond Dev and Mater, CON, Shtiintsa Kishinea, 1973, 88-93 (in Russian).
30 69. On the problem of measurement of thickness of epituxial semi-
77. Electrical properties
conductor films on semiconductor substrates by the ellipsometric method in the far infrared region. (USSR) It is shown that it is necessary to account for the interface layer between the epitaxial film and semiconductor substrate and the spread of optical constants of substrates on determination of thickness of epitaxial films by the ellipsometric method in the far infrared spectral region An example of determination of thickness of highohmic Si epitaxial film on low-ohmic Si substrate is presented K K Svitashev et al, Mikroelektronika, 2 (5), 1973, 454-460 (in Russian). 30 70. Comparative investigation of sputtering of some metals in glow and high-frequency discharge. (USSR) Some characteristics of the process of sputtering of copper and titanium in glow and high-frequency discharges are investigated. It is found that the absolute values of sputtering rate are higher in the high-freouencv ______ ___.~.~~~~~discharge. This effect is explained by different ener_v distributions of ions in the examined discharges A I Maksimov and V I Svetsov, Rep of Zvanov Chem-Technol Znst, No 15, 1973, 110-115 (in Russian). 30 71. Growth of autoepitaxial films of silicon carbide of cubic modification. (USSR) Autoepitaxial beta-Sic films have been prepared by thermal decomposition of methyltrichlorsilane in hydrogen flow at temperature .of 1700°C. M S Saidov et al, Dokl AN Uz SSR, No 6, 1973, 28-29 (in Russian). 40
silicon nit&&-alumi&n. (USSR) Electrical urouerties of MIS structures n-GaAs-Si,N,-Al are investigated. The GaAs and Si3N4 films have been prepared by the methods of gas-transport reactions in a gradual process from AsCIJ and Ga. and SiCI, and NzH4, respectively. 0 V Senoshenko and Yu E Maronchuk, Mikroelektronika, 2 (5), 1973, 426-430 (in Russian). 30 76. Experimental investigation of the inthrence of doping profiles of
30
and crystalline
structure
of Cd.Hg,_,Te
thin films. (USSR). Thermal denendences of electrical conductivity, Hall coefficient and mobility, and crystalline structure are investigated in Cd,Hg,_,Te thin films prepared by various methods of vacuum deposition. The influence of thermal treatment of the films in mercury vapours on their properties is studies. K V Kolezhuk et al, Ukrain Fiz Zh, 18 (9), 1973, 1486-1490 (in Russian). 30
Influence of substrate temperature on thermal and electrical conductivity of chromium films. (USSR) With the aim of preparation of film field cathodes with stable operation in conditions of technical vacuum, the influence of substrate temperature on the values of coefficients of electrical and thermal conductivity of chromium films is investigated. The Cr films have been prepared by electron-beam evaporation of Cr from a molybdenum crucillie in vacuum of 2 x iO_’ to 7 X iO_” torr on mica substrates. G P Vasilev and V M Abrosimov, Rep of Moscow Phys-tech Znst of Radiotech and Electronics, Part 2, 1973, 73-76 (in Russian). 78.
30 79. Thermal stability of single crystal BaO films grown on (0001)
rhenium face. (USSR) Using a mass spectrometric method, dynamics of evaporation of thin (up to 10 monolayers) of single crystal BaO films on Re is investigated in the temperature interval of 400 to 1100°C in vacuum of
significant number of them travel in straight lines to the anode without collision. They are responsible for almost all of the power input into the anode and can dominate the growth of a thin film on a substrate at the anode. (UK) B N Chapman et al, J Appl Phys, 45 (5), 1974, 2115-2120. 30 65. Formation of PtO films by reactive sputtering. (USA) An oxide phase which is isostructural with PdO has been obtained as a thin film by reactive dc diode sputtering of Pt in argon-oxygen mixtures. Films in which this is the only crystalline phase observed have been prepared; they have a density of 13.5 * 1.0 g/cm3. Theoxide phase is .UIIJLLI”,~ ...“+nLln ar n+ lrnLLiJc’lXu’“.X nm..nrot.,m0 LI”““C or.n.,m J””
30 72. Crystalline structure and chemical composition of thin permalloy films prepared by pulsed laser radiation in the regime of free generation. (USSR) Polycrystalline permalloy films on polished fused quartz have been prepared in a vacuum of 10m4 torr by pulsed ruby laser radiation evaporation. Potential application of laser evaporation of refractory materials for preparation of thin films is shown. U S Urazaliev et al, Piz Khim Obrab Mater, No 4, 1973, 151-154 (i/r Russian). 30 73. Infra-red transmission and reflection spectra of silicon nitride
films prepared in high frequency discharge plasma. (USSR). Infra-red transmission and reflection spectra of amorphous silicon nitride films with thickness of 0.4 to 0.8 pm, prepared in high frequency discharge plasma, are investigated. Yu I Prokhorov et al, Zh Prikl Spektroskop, 19 (3), 1973, 520-523 (in Russian). 30
30 66. The preparation and use of unbacked metal films as filters in the
74. Application of ion beams in film technology. (Germany)
extreme ultraviolet. (USA) Techniques for producing and using unbacked metal films as transmitting filters in the vacuum ultraviolet both for the laboratory and space instrumentation are reviewed. The different characteristics of metals require different techniques in the preparation of the films. The most widely used is the vacuum evaporation methods. The films are removed from the substrate on which they are deposited because
A review of ion beam methods for preparation and treatment of various materials is given. The nitride films have been prepared on Si and Al surfaces by bombardment with nitrogen ions. The methods of ion-beam sputtering and ion-beam etching are considered. U Scheit and 0 Fiedler, Wiss Zeitsch Tech Hochsch Karl Marx Stadt. 14 (5), 1972, 523-529 (in German).
the na~hctnte. LI.L, .,U”.,.IUL”~
I,-,= ...e...J hiohlv Y.”
ahrnrhino “V”YLV.-.D
in -*_ XITV , . T~_IJ~ ihe .--
fi_!p.s ~rp
,J.“._
” - --^
75. Eiectro-nhysicai properties or
MIS
30 structies
gaiiium arsenide-
backed and supported by a frame of some type. A brief description of the optical characteristics of these films is also given. W R Hunter, Physics ofthin films, 7, 1973, 43-l 14. 30 67. Application of cathode pulverization. First part: in the laboratory. (France) Applications of sputtering and associated techniques which are still in the research state are reviewed. Examples are selected from the area of microelectronics, optoelectronics, integrated optics, displays etc. L M Reiber, Vide, 27 (168), 1973, 242-250 (in French). 30 68. Application of cathode pulverization. Second part: in the industry. (France) Sputtering and associated techniques used in the industry are reviewed. The review includes standard fabrication processes applied to integrated hybrid circuits, semiconductor technology, reflecting matin~7 lavers. _________._transnarent ...._r_.~-~~. ~~~~ ~~~Irazor blade coatinas. etc, --I---_~, cnndnctive J Lantaires, Vide, 28 (168) 1973, 250-254 (in French).
Gmm diodes on their parameters. (USSR) Gun diodes, prepared of epitaxial structures of n-n+ type with various doping profiles, are investigated. The doping profiles were determined by the method of measurement of voltage dependences of capacity with gradual removal of layers. Epitaxial films have been grown by gas epitaxy in the system Ga + AsC13 + Hz. A A Barybin et al, Semicond Dev and Mater, CON, Shtiintsa Kishinea, 1973, 88-93 (in Russian).
30 69. On the problem of measurement of thickness of epituxial semi-
77. Electrical properties
conductor films on semiconductor substrates by the ellipsometric method in the far infrared region. (USSR) It is shown that it is necessary to account for the interface layer between the epitaxial film and semiconductor substrate and the spread of optical constants of substrates on determination of thickness of epitaxial films by the ellipsometric method in the far infrared spectral region An example of determination of thickness of highohmic Si epitaxial film on low-ohmic Si substrate is presented K K Svitashev et al, Mikroelektronika, 2 (5), 1973, 454-460 (in Russian). 30 70. Comparative investigation of sputtering of some metals in glow and high-frequency discharge. (USSR) Some characteristics of the process of sputtering of copper and titanium in glow and high-frequency discharges are investigated. It is found that the absolute values of sputtering rate are higher in the high-freouencv ______ ___.~.~~~~~discharge. This effect is explained by different ener_v distributions of ions in the examined discharges A I Maksimov and V I Svetsov, Rep of Zvanov Chem-Technol Znst, No 15, 1973, 110-115 (in Russian). 30 71. Growth of autoepitaxial films of silicon carbide of cubic modification. (USSR) Autoepitaxial beta-Sic films have been prepared by thermal decomposition of methyltrichlorsilane in hydrogen flow at temperature .of 1700°C. M S Saidov et al, Dokl AN Uz SSR, No 6, 1973, 28-29 (in Russian). 40
silicon nit&&-alumi&n. (USSR) Electrical urouerties of MIS structures n-GaAs-Si,N,-Al are investigated. The GaAs and Si3N4 films have been prepared by the methods of gas-transport reactions in a gradual process from AsCIJ and Ga. and SiCI, and NzH4, respectively. 0 V Senoshenko and Yu E Maronchuk, Mikroelektronika, 2 (5), 1973, 426-430 (in Russian). 30 76. Experimental investigation of the inthrence of doping profiles of
30
and crystalline
structure
of Cd.Hg,_,Te
thin films. (USSR). Thermal denendences of electrical conductivity, Hall coefficient and mobility, and crystalline structure are investigated in Cd,Hg,_,Te thin films prepared by various methods of vacuum deposition. The influence of thermal treatment of the films in mercury vapours on their properties is studies. K V Kolezhuk et al, Ukrain Fiz Zh, 18 (9), 1973, 1486-1490 (in Russian). 30
Influence of substrate temperature on thermal and electrical conductivity of chromium films. (USSR) With the aim of preparation of film field cathodes with stable operation in conditions of technical vacuum, the influence of substrate temperature on the values of coefficients of electrical and thermal conductivity of chromium films is investigated. The Cr films have been prepared by electron-beam evaporation of Cr from a molybdenum crucillie in vacuum of 2 x iO_’ to 7 X iO_” torr on mica substrates. G P Vasilev and V M Abrosimov, Rep of Moscow Phys-tech Znst of Radiotech and Electronics, Part 2, 1973, 73-76 (in Russian). 78.
30 79. Thermal stability of single crystal BaO films grown on (0001)
rhenium face. (USSR) Using a mass spectrometric method, dynamics of evaporation of thin (up to 10 monolayers) of single crystal BaO films on Re is investigated in the temperature interval of 400 to 1100°C in vacuum of