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Characterization in silicon processing
InTERHHTIOIlfliLJOURnDLOF
HIUERIIL FRO[ESNIHI; ELSEVIER
Int. J. Miner. Process. 42 (1994) 137
Book review
Characterization in Silicon Processing. Y. Strausser (Editor). Materials Characterization Series. Surfaces, Interfaces, Thin Films. Butterworth-Heineman, Oxford, 1993, 240 pp., £ 47.50. This volume of the "Materials Characterization Series" presents the state-ofthe-art in the technology of silicon-based systems. It has been written to aid nonspecialists in understanding the wide world of silicon processing and to guide them in a first approach of this world. The volume is composed of six chapters, each of them dealing with a material commonly used in the manufacture of silicon-based devices: epitaxial silicon (including silicon-germanium alloys), polycrystalline silicon, metal silicides, aluminium and copper conductors, tungsten conductors and barrier films. Each chapter describes the different steps involved in the elaboration of the material and discusses different methods commonly used. The desired properties of the material are emphasized (crystal quality, chemical composition, electronic and optical properties... ) and the characterization techniques appropriate to the study of these properties are presented. The application of the characterization techniques is illustrated by typical examples. The descriptions are short. An abundant list of references is given for further research. An appendix provides abstract forms for about thirty techniques commonly used in the manufacture of silicon-based devices. The principles of the techniques are summarized and the main characteristics are listed: parameter measured, resolution, sensitivity.... This volume is recommended to scientists and engineers either using siliconbased devices or coming to work in any field of these systems. The volume may be also helpful to teachers and students in the field of materials sciences. Madeleine Gandais Paris
SSDI 0301-7516(94)00021-Q
HIUERIIL FRO[ESNIHI; ELSEVIER
Int. J. Miner. Process. 42 (1994) 137
Book review
Characterization in Silicon Processing. Y. Strausser (Editor). Materials Characterization Series. Surfaces, Interfaces, Thin Films. Butterworth-Heineman, Oxford, 1993, 240 pp., £ 47.50. This volume of the "Materials Characterization Series" presents the state-ofthe-art in the technology of silicon-based systems. It has been written to aid nonspecialists in understanding the wide world of silicon processing and to guide them in a first approach of this world. The volume is composed of six chapters, each of them dealing with a material commonly used in the manufacture of silicon-based devices: epitaxial silicon (including silicon-germanium alloys), polycrystalline silicon, metal silicides, aluminium and copper conductors, tungsten conductors and barrier films. Each chapter describes the different steps involved in the elaboration of the material and discusses different methods commonly used. The desired properties of the material are emphasized (crystal quality, chemical composition, electronic and optical properties... ) and the characterization techniques appropriate to the study of these properties are presented. The application of the characterization techniques is illustrated by typical examples. The descriptions are short. An abundant list of references is given for further research. An appendix provides abstract forms for about thirty techniques commonly used in the manufacture of silicon-based devices. The principles of the techniques are summarized and the main characteristics are listed: parameter measured, resolution, sensitivity.... This volume is recommended to scientists and engineers either using siliconbased devices or coming to work in any field of these systems. The volume may be also helpful to teachers and students in the field of materials sciences. Madeleine Gandais Paris
SSDI 0301-7516(94)00021-Q