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Contents Bulk Nitride Workshop
The International Workshop on Bulk Nitride Semiconductors III Bulk Nitride Workshop Bulk Nitride Workshop J.A. Freitas and Z. Sitar
1
Jose´ Roberto Leite (1942–2004) J.A. Freitas Jr.
3
Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient B.N. Feigelson and R.L. Henry
5
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method M. Boc´kowski, I. Grzegory, J. Borysiuk, G. Kamler, B. Łucznik, M. Wro´blewski, P. Kwiatkowski, K. Jasik, S. Krukowski and S. Porowski
11
Growth of thick GaN layers with hydride vapour phase epitaxy B. Monemar, H. Larsson, C. Hemmingsson, I.G. Ivanov and D. Gogova
17
Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications D.F. Storm, D.S. Katzer, J.A. Mittereder, S.C. Binari, B.V. Shanabrook, X. Xu, D.S. McVey, R.P. Vaudo and G.R. Brandes
32
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B. Łucznik, B. Pastuszka, I. Grzegory, M. Boc´kowski, G. Kamler, E. Litwin-Staszewska and S. Porowski
38
Thermodynamic analysis of AlGaN HVPE growth A. Koukitu, J. Kikuchi, Y. Kangawa and Y. Kumagai
47
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta and B. Monemar
55
Growth of thick AlN layers by hydride vapor-phase epitaxy Y. Kumagai, T. Yamane and A. Koukitu
62
AlN bulk crystals grown on SiC seeds R. Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich and Z. Sitar
68
Crucible materials for growth of aluminum nitride crystals R. Schlesser, R. Dalmau, D. Zhuang, R. Collazo and Z. Sitar
75
Sublimation growth of AlN crystals: Growth mode and structure evolution R. Yakimova, A. Kakanakova-Georgieva, G.R. Yazdi, G.K. Gueorguiev and M. Syva¨ja¨rvi
81
Thick AlN layers grown by HVPE O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov and V. Dmitriev
87
doi:10.1016/S0022-0248(05)00741-4
viii
Contents
Sublimation growth of AlN bulk crystals in Ta crucibles E.N. Mokhov, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm and H. Helava Optoelectronic devices on bulk GaN S. Figge, T. Bo¨ttcher, J. Dennemarck, R. Kro¨ger, T. Paskova, B. Monemar and D. Hommel
93 101
Properties of InGaN blue laser diodes grown on bulk GaN substrates P. Perlin, T. Suski, M. Leszczyn´ski, P. Prystawko, T. S´wietlik, Ł. Marona, P. Wis´ niewski, R. Czernecki, G. Nowak, J.L. Weyher, G. Kamler, J. Borysiuk, E. Litwin-Staszewska, L. Dmowski, R. Piotrzkowski, G. Franssen, S. Grzanka, I. Grzegory and S. Porowski 107 Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya and S.Yu. Karpov 115 Defects in p-doped bulk GaN crystals grown with Ga polarity Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov and M.A. O’Keefe
125
Defects in GaN single crystals and homoepitaxial structures J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory and S. Porowski 135 Identification of donors, acceptors, and traps in bulk-like HVPE GaN D.C. Look, Z.-Q. Fang and B. Claflin
143
Electronic and optical properties of wurtzite and zinc-blende TlN and AlN A. Ferreira da Silva, N. Souza Dantas, J.S. de Almeida, R. Ahuja and C. Persson
151
Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques : S. Jursˇ enas, S. Miasojedovas and A. Zˇukauskas
161
Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors J.A. Freitas Jr
168
Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire : S. Miasojedovas, S. Jursˇ enas, A. Zˇukauskas, V.Yu. Ivanov, M. Godlewski, M. Leszczyn´ski, P. Perlin and T. Suski 183 Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film E. Silveira, J.A. Freitas, G.A. Slack, L.J. Schowalter, M. Kneissl, D.W. Treat and N.M. Johnson 188 Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures W. Knap, C. Skierbiszewski, K. Dybko, J. Łusakowski, M. Siekacz, I. Grzegory and S. Porowski 194
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com
1
Jose´ Roberto Leite (1942–2004) J.A. Freitas Jr.
3
Growth of GaN crystals from molten solution with Ga free solvent using a temperature gradient B.N. Feigelson and R.L. Henry
5
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method M. Boc´kowski, I. Grzegory, J. Borysiuk, G. Kamler, B. Łucznik, M. Wro´blewski, P. Kwiatkowski, K. Jasik, S. Krukowski and S. Porowski
11
Growth of thick GaN layers with hydride vapour phase epitaxy B. Monemar, H. Larsson, C. Hemmingsson, I.G. Ivanov and D. Gogova
17
Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications D.F. Storm, D.S. Katzer, J.A. Mittereder, S.C. Binari, B.V. Shanabrook, X. Xu, D.S. McVey, R.P. Vaudo and G.R. Brandes
32
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B. Łucznik, B. Pastuszka, I. Grzegory, M. Boc´kowski, G. Kamler, E. Litwin-Staszewska and S. Porowski
38
Thermodynamic analysis of AlGaN HVPE growth A. Koukitu, J. Kikuchi, Y. Kangawa and Y. Kumagai
47
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta and B. Monemar
55
Growth of thick AlN layers by hydride vapor-phase epitaxy Y. Kumagai, T. Yamane and A. Koukitu
62
AlN bulk crystals grown on SiC seeds R. Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich and Z. Sitar
68
Crucible materials for growth of aluminum nitride crystals R. Schlesser, R. Dalmau, D. Zhuang, R. Collazo and Z. Sitar
75
Sublimation growth of AlN crystals: Growth mode and structure evolution R. Yakimova, A. Kakanakova-Georgieva, G.R. Yazdi, G.K. Gueorguiev and M. Syva¨ja¨rvi
81
Thick AlN layers grown by HVPE O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov and V. Dmitriev
87
doi:10.1016/S0022-0248(05)00741-4
viii
Contents
Sublimation growth of AlN bulk crystals in Ta crucibles E.N. Mokhov, O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson, Yu.N. Makarov, M.G. Ramm and H. Helava Optoelectronic devices on bulk GaN S. Figge, T. Bo¨ttcher, J. Dennemarck, R. Kro¨ger, T. Paskova, B. Monemar and D. Hommel
93 101
Properties of InGaN blue laser diodes grown on bulk GaN substrates P. Perlin, T. Suski, M. Leszczyn´ski, P. Prystawko, T. S´wietlik, Ł. Marona, P. Wis´ niewski, R. Czernecki, G. Nowak, J.L. Weyher, G. Kamler, J. Borysiuk, E. Litwin-Staszewska, L. Dmowski, R. Piotrzkowski, G. Franssen, S. Grzanka, I. Grzegory and S. Porowski 107 Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: A modelling insight V.F. Mymrin, K.A. Bulashevich, N.I. Podolskaya and S.Yu. Karpov 115 Defects in p-doped bulk GaN crystals grown with Ga polarity Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov and M.A. O’Keefe
125
Defects in GaN single crystals and homoepitaxial structures J.L. Weyher, G. Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory and S. Porowski 135 Identification of donors, acceptors, and traps in bulk-like HVPE GaN D.C. Look, Z.-Q. Fang and B. Claflin
143
Electronic and optical properties of wurtzite and zinc-blende TlN and AlN A. Ferreira da Silva, N. Souza Dantas, J.S. de Almeida, R. Ahuja and C. Persson
151
Rate of radiative and nonradiative recombination in bulk GaN grown by various techniques : S. Jursˇ enas, S. Miasojedovas and A. Zˇukauskas
161
Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors J.A. Freitas Jr
168
Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire : S. Miasojedovas, S. Jursˇ enas, A. Zˇukauskas, V.Yu. Ivanov, M. Godlewski, M. Leszczyn´ski, P. Perlin and T. Suski 183 Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film E. Silveira, J.A. Freitas, G.A. Slack, L.J. Schowalter, M. Kneissl, D.W. Treat and N.M. Johnson 188 Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures W. Knap, C. Skierbiszewski, K. Dybko, J. Łusakowski, M. Siekacz, I. Grzegory and S. Porowski 194
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com