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Contents First ONR International Indium Nitride Workshop
Contents of the Proceedings of the First International Indium Nitride Workshop Preface K.S.A. Butcher Plasma-assisted MBE growth and characterization of InN on sapphire S.V. Ivanov, T.V. Shubina, V.N. Jmerik, V.A. Vekshin, P.S. Kop’ev and B. Monemar
vii
1
Ultrafast carrier dynamics in InN epilayers F. Chen, A.N. Cartwright, H. Lu and W.J. Schaff
10
MOVPE growth of InN films and quantum dots B. Maleyre, O. Briot and S. Ruffenach
15
Absorption and Raman scattering processes in InN films and dots O. Briot, B. Maleyre, S. Ruffenach, B. Gil, C. Pinquier, F. Demangeot and J. Frandon
22
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements C.H. Swartz, R.P. Tompkins, N.C. Giles, T.H. Myers, H. Lu, W.J. Schaff and L.F. Eastman
29
Electron mobility in indium nitride B.R. Nag
35
Vacancy defects in epitaxial InN: identification and electrical properties A. Laakso, J. Oila, A. Kemppinen, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu and W.J. Schaff
41
The potential of ion beam techniques for the development of indium nitride H. Timmers, S.K. Shrestha and A.P. Byrne
50
A Raman spectroscopy study of InN M. Kuball, J.W. Pomeroy, M. Wintrebert-Fouquet, K.S.A. Butcher, H. Lu and W.J. Schaff
59
MBE growth and properties of InN-based dilute magnetic semiconductors P.P. Chen, H. Makino and T. Yao
66
Piezoelectricity in indium nitride I.L. Guy, Z. Zheng, M. Wintrebert-Fouquet, K.S.A. Butcher, P. Chen and T.L. Tansley
72
Absorption and photoluminescence features caused by defects in InN D. Alexandrov, K.S.A. Butcher and M. Wintrebert-Fouquet
77
Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods Z.H. Lan, W.M. Wang, C.L. Sun, S.C. Shi, C.W. Hsu, T.T. Chen, K.H. Chen, C.C. Chen, Y.F. Chen and L.C. Chen
87
0022-0248/04/$ - see front matter doi:10.1016/S0022-0248(04)00833-4
x
Contents
Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition H.J. Kim, H. Na, S.-Y. Kwon, H.-C. Seo, H.J. Kim, Y. Shin, K.-H. Lee, D.H. Kim, H.J. Oh, S. Yoon, C. Sone, Y. Park and E. Yoon
95
The composition dependence of the InxGa1@xN bandgap K.P. O’Donnell, I. Fernandez-Torrente, P.R. Edwards and R.W. Martin
100
Scanning tunneling and cathodoluminescence spectroscopy of indium nitride M.R. Phillips, M.H. Zareie, O. Gelhausen, M. Drago, T. Schmidtling and W. Richter
106
The influence of structural properties on conductivity and luminescence of MBE grown InN P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski and E.R. Weber
111
Optical properties and electronic structure of InN and In-rich group III-nitride alloys W. Walukiewicz, S.X. Li, J. Wu, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu and W.J. Schaff
119
Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates A. Jain, S. Raghavan and J.M. Redwing 128 InN grown by remote plasma-enhanced chemical vapor deposition M. Wintrebert-Fouquet, K.S.A. Butcher and P.P.-T. Chen
134
MOVPE growth and photoluminescence of wurtzite InN T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama and T. Makimoto 139 Visible emissions near 1.9–2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy T. Yodo, Y. Kitayama, K. Miyaki, H. Yona, Y. Harada, K.E. Prince, K. Scott and A. Butcher 145 The effect of substrate polarity on the growth of InN by RF-MBE H. Naoi, F. Matsuda, T. Araki, A. Suzuki and Y. Nanishi
155
Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy M. Higashiwaki and T. Matsui 162 Characteristics of InN thin films grown using a PAMBE technique R.J. Kinsey, P.A. Anderson, C.E. Kendrick, R.J. Reeves and S.M. Durbin
167
Relationship between the optical properties and superconductivity of InN with high carrier concentration T. Inushima, T. Sakon and M. Motokawa 173
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier Science books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com
vii
1
Ultrafast carrier dynamics in InN epilayers F. Chen, A.N. Cartwright, H. Lu and W.J. Schaff
10
MOVPE growth of InN films and quantum dots B. Maleyre, O. Briot and S. Ruffenach
15
Absorption and Raman scattering processes in InN films and dots O. Briot, B. Maleyre, S. Ruffenach, B. Gil, C. Pinquier, F. Demangeot and J. Frandon
22
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements C.H. Swartz, R.P. Tompkins, N.C. Giles, T.H. Myers, H. Lu, W.J. Schaff and L.F. Eastman
29
Electron mobility in indium nitride B.R. Nag
35
Vacancy defects in epitaxial InN: identification and electrical properties A. Laakso, J. Oila, A. Kemppinen, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu and W.J. Schaff
41
The potential of ion beam techniques for the development of indium nitride H. Timmers, S.K. Shrestha and A.P. Byrne
50
A Raman spectroscopy study of InN M. Kuball, J.W. Pomeroy, M. Wintrebert-Fouquet, K.S.A. Butcher, H. Lu and W.J. Schaff
59
MBE growth and properties of InN-based dilute magnetic semiconductors P.P. Chen, H. Makino and T. Yao
66
Piezoelectricity in indium nitride I.L. Guy, Z. Zheng, M. Wintrebert-Fouquet, K.S.A. Butcher, P. Chen and T.L. Tansley
72
Absorption and photoluminescence features caused by defects in InN D. Alexandrov, K.S.A. Butcher and M. Wintrebert-Fouquet
77
Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods Z.H. Lan, W.M. Wang, C.L. Sun, S.C. Shi, C.W. Hsu, T.T. Chen, K.H. Chen, C.C. Chen, Y.F. Chen and L.C. Chen
87
0022-0248/04/$ - see front matter doi:10.1016/S0022-0248(04)00833-4
x
Contents
Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition H.J. Kim, H. Na, S.-Y. Kwon, H.-C. Seo, H.J. Kim, Y. Shin, K.-H. Lee, D.H. Kim, H.J. Oh, S. Yoon, C. Sone, Y. Park and E. Yoon
95
The composition dependence of the InxGa1@xN bandgap K.P. O’Donnell, I. Fernandez-Torrente, P.R. Edwards and R.W. Martin
100
Scanning tunneling and cathodoluminescence spectroscopy of indium nitride M.R. Phillips, M.H. Zareie, O. Gelhausen, M. Drago, T. Schmidtling and W. Richter
106
The influence of structural properties on conductivity and luminescence of MBE grown InN P. Specht, R. Armitage, J. Ho, E. Gunawan, Q. Yang, X. Xu, C. Kisielowski and E.R. Weber
111
Optical properties and electronic structure of InN and In-rich group III-nitride alloys W. Walukiewicz, S.X. Li, J. Wu, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu and W.J. Schaff
119
Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates A. Jain, S. Raghavan and J.M. Redwing 128 InN grown by remote plasma-enhanced chemical vapor deposition M. Wintrebert-Fouquet, K.S.A. Butcher and P.P.-T. Chen
134
MOVPE growth and photoluminescence of wurtzite InN T. Matsuoka, H. Okamoto, H. Takahata, T. Mitate, S. Mizuno, Y. Uchiyama and T. Makimoto 139 Visible emissions near 1.9–2.2 eV from hexagonal InN films grown by electron cyclotron resonance plasma-assisted molecular-beam epitaxy T. Yodo, Y. Kitayama, K. Miyaki, H. Yona, Y. Harada, K.E. Prince, K. Scott and A. Butcher 145 The effect of substrate polarity on the growth of InN by RF-MBE H. Naoi, F. Matsuda, T. Araki, A. Suzuki and Y. Nanishi
155
Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy M. Higashiwaki and T. Matsui 162 Characteristics of InN thin films grown using a PAMBE technique R.J. Kinsey, P.A. Anderson, C.E. Kendrick, R.J. Reeves and S.M. Durbin
167
Relationship between the optical properties and superconductivity of InN with high carrier concentration T. Inushima, T. Sakon and M. Motokawa 173
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier Science books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com