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Contents of volume 113
Thm Sohd Ftlrns, 113 (1984) 346-348
346
Contents of Volume 113
ELECTRONICS
AND OPTICS
Electncal and photovoltmc properUes of metal contacts to trans-polyacetylene P Fedorko (Bratlslava, Czechoslovakia) and J Kamckl (Brussels, Belgium) METALLURGICAL AND PROTECTIVECOATINGS Room temperature mterdfffuston study of Au/Ga thin film couples S Nakahara and E Kmsbron (Murray Hdl, NJ, U S A ) The effect of ion-implanted sdlcon on the 1050°C oxldaUon behawor of Co-Cr-AI and Co-Cr-AI-Y composutlons J G Smeggd, E L Paradls and A J Shuskus (East Hartford, CT, U S A )
15
27
PREPARATION AND CHARACTERIZATION
ContribuUon ~ I'analyse des dtagrammes de dfffracUon ~lectromque de pettts agr~gats atomtques h~hco=daux cas de deux h~llces P Larroque and B Dousset (Toulouse, France)
39
Optlmtzatton and mtcrostructural analys=s of black-zinc-coated aluminum solar collector coatings S N Patel and O T Inal (Socorro, NM, U S A )
47
Addtuonal X-ray and electron dfffracUon peaks of polycrystalhne sdlcon films M Hendnks, S Radelaar (Delft, The Netherlands), A M Beers and J Bloem (Numegen, The Netherlands)
59
GENERAL FILM BEHAVIOUR
Laser-reduced diffusion of silicon atoms from SI3N4 films depostted onto GaAs J A Akmtunde (lle-lfe, Nigeria) Comments on computer mvestlgaUons of m~crographs of metal films near the=r continuity threshold A Kapltulmk and G Deutscher (Tel Avw, Israel)
73
79
LETTERS Fuchs-Sondhelmer expression for the strata gauge coefficient of thin metalhc films B K Sharma and R Srlvastava (Gwahor, India)
L19
Rheotaxtal growth on indium thin films J L Morenza, A Ftgueras, M Varela, J Esteve and J M Codma (Barcelona, Spain)
L21
ELECTRONICS AND OPTICS
Electrical properties of AI203 and AIPxOy dielectric layers on InP L G Memers (San Diego, CA. U S A )
85
Propertms of Sn02 F films prepared on glass substrates by the spraying method G Mavrodtev, M Gajdardztska and N Novskovskl (Skopje, Yugoslavta)
93
Unambiguous determmaUon of thickness and dtelectrtc funcuon of thin films by spectroscopic elhpsometry H Arwm and D E Aspnes (Murray Hdl, NJ, U S A )
101
Electncal conductivity m Langmulr-Blodgett films of porphyrms m-plane and through-the-film studtes R Jones, R H Tredgold, A Hoorfarand P Hodge (Lancaster, Gt Britain)
115
CONTENTS
347
METALLURGICAL AND PROTECTIVECOATINGS In sltu
study of film stress and kinetics of platinum sdicide formation on silicon J T. Pan and I.A. Blech (Palo Alto, CA, U S.A.)
. .
129
PREPARATION A N D C H A R A C T E R I Z A T I O N
REVIEW PAPER Plasma-assisted chemical vapor deposition processes and their semiconductor apphcattons . . A Sherman (Santa Clara, CA, U.S.A.)
135
Kikuchl rings from polycrystalhna platinum films with a (111 ) fiber axis P. Dixlt and R W Vook (Syracuse, NY, U.S.A.)
151
On the problem of elemental Bv material in the interface of native oxide/AraBv structures V I Baly=,T P Smirnova and N. F. Zacharchuk (Novosiblrsk, U.S S R )
157
X-ray and electron microscopy studies of single-layer TaS2 and NbS 2 . C Llu, O. Smgh, P Joansen, A E Curzon and R F Frindt (Burnaby, Canada)
165
LETTER Effect of electron irradiation on crystallization of vacuum-deposited amorphous antimony films. M Hashimoto, A Tabai, S Talima and M Kato (Tokyo, Japan)
L25
ELECTRONICSAND OPTICS Electrical characterization of amorphous germanium dioxide films . . . . . S B Krupanldhl, M Sayer (Kingston, Canada) and A Mansingh (Delhi, India)
173
Switching mechanism in ZnTa films . . . . . . . . . . . . S M. Patal and N. G. Patel (Vallabh Vidyanagar, India)
185
Te/CdS thin film diodes . . . . . . . . . . . . I Gunal and M E Ozsan (Ankara, Turkey)
189
Magnetic properties of sputtered Co-lr thin films M Kitada, S. Asada and N. Shimlzu (Tokyo, Japan)
199
PREPARATION A N D
CHARACTERIZATION
Epltaxial growth of erbium dlhydride films M. S. Rahman Khan (Zaria, Nigeria)
207
Influence of annealing on the phase composition, transmission and resistivity of SnOx thin films G. Beensh-Marchwtcka, L KrbI-Stgpniewska and A. Misiuk (Wroctaw, Poland)
215
Characterization of chemically vapor deposited Nl-(0 05-0.20 wt.%) B alloys M Skibo (San Diego, CA, U.S.A.) and F. A Greuhch (Livermore, CA, U.S A.)
225
Vacuum-deposited amorphous phthalem films . A. Morinaka and S. Oikawa (Ibaraki, Japan)
235
.
.
.
.
.
Oxidation of very thin copper films investigated by optical transmittance S Santuccl and P. Pmozzl (L'Aquila, Italy)
243
Thermally stimulated discharge current studies of acrylic-acid-doped polystyrene films I. M. Talwar (Kurukshetra, India), H. C Stnha and A. P. Srivastava (Sagar, India)
251
GENERAL FILM BEHAVIOUR
Propagation of epitaxial power of micas through gold thin films S. Folgueras, F A. P Da Costa and M. A Hoyos (S~o Paulo, Brazil)
257
ELECTRONICS AND OPTICS The effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous silicon thin films . . . . P Chaudhurl, S Ray and A K Barua (Calcutta, India) ,,
261
348
CONTENTS
METALLURGICAL AND PROTECTIVE COATINGS
Stress In chemically vapour-deposlted silicon films J Adamczewska and T BudzyfiSkl (Warsaw, Poland)
271
Stress modification m cerous fluoride films through admixture with other fluoride compounds S F Pelhcorl (Goleta, CA, U S A )
287
PREPARATION AND CHARACTERIZATION
Some reflect=on high energy electron diffraction and depth-selectwe Mossbauer spectroscopy mvest=gat~ons on the structures in evaporated thin tin films before and after their heating in vacuum S K Penevaand K D Djuneva (Sofia, Bulgar=a) Growth of monocrystalhne silicon islands on insulating substrates W Scharff, J -W Erben, A. Wolf, M. Heber, C Hamann, C Welssmantel (KarI-Marx-Stadt, G D R ), R Klabes, J Matthal, M Voelskov, R Kogler and W Wleser (Dresden, G D R )
297 327
GENERAL FILM BEHAVIOUR
Electron-stimulated desorptlon study of hydrogen-exposed aluminum films Ch Park, M Bujorand H Poppa (Moffett Field, CA, U S A )
337
LETTER Solid state electrochromtc cells, optical properties of the sodium tungsten bronze system K Kangand M Green (London, Gt Br=tam)
L29
ERRATUM TO VOL 110
L33
AUTHORINDEX
345
346
Contents of Volume 113
ELECTRONICS
AND OPTICS
Electncal and photovoltmc properUes of metal contacts to trans-polyacetylene P Fedorko (Bratlslava, Czechoslovakia) and J Kamckl (Brussels, Belgium) METALLURGICAL AND PROTECTIVECOATINGS Room temperature mterdfffuston study of Au/Ga thin film couples S Nakahara and E Kmsbron (Murray Hdl, NJ, U S A ) The effect of ion-implanted sdlcon on the 1050°C oxldaUon behawor of Co-Cr-AI and Co-Cr-AI-Y composutlons J G Smeggd, E L Paradls and A J Shuskus (East Hartford, CT, U S A )
15
27
PREPARATION AND CHARACTERIZATION
ContribuUon ~ I'analyse des dtagrammes de dfffracUon ~lectromque de pettts agr~gats atomtques h~hco=daux cas de deux h~llces P Larroque and B Dousset (Toulouse, France)
39
Optlmtzatton and mtcrostructural analys=s of black-zinc-coated aluminum solar collector coatings S N Patel and O T Inal (Socorro, NM, U S A )
47
Addtuonal X-ray and electron dfffracUon peaks of polycrystalhne sdlcon films M Hendnks, S Radelaar (Delft, The Netherlands), A M Beers and J Bloem (Numegen, The Netherlands)
59
GENERAL FILM BEHAVIOUR
Laser-reduced diffusion of silicon atoms from SI3N4 films depostted onto GaAs J A Akmtunde (lle-lfe, Nigeria) Comments on computer mvestlgaUons of m~crographs of metal films near the=r continuity threshold A Kapltulmk and G Deutscher (Tel Avw, Israel)
73
79
LETTERS Fuchs-Sondhelmer expression for the strata gauge coefficient of thin metalhc films B K Sharma and R Srlvastava (Gwahor, India)
L19
Rheotaxtal growth on indium thin films J L Morenza, A Ftgueras, M Varela, J Esteve and J M Codma (Barcelona, Spain)
L21
ELECTRONICS AND OPTICS
Electrical properties of AI203 and AIPxOy dielectric layers on InP L G Memers (San Diego, CA. U S A )
85
Propertms of Sn02 F films prepared on glass substrates by the spraying method G Mavrodtev, M Gajdardztska and N Novskovskl (Skopje, Yugoslavta)
93
Unambiguous determmaUon of thickness and dtelectrtc funcuon of thin films by spectroscopic elhpsometry H Arwm and D E Aspnes (Murray Hdl, NJ, U S A )
101
Electncal conductivity m Langmulr-Blodgett films of porphyrms m-plane and through-the-film studtes R Jones, R H Tredgold, A Hoorfarand P Hodge (Lancaster, Gt Britain)
115
CONTENTS
347
METALLURGICAL AND PROTECTIVECOATINGS In sltu
study of film stress and kinetics of platinum sdicide formation on silicon J T. Pan and I.A. Blech (Palo Alto, CA, U S.A.)
. .
129
PREPARATION A N D C H A R A C T E R I Z A T I O N
REVIEW PAPER Plasma-assisted chemical vapor deposition processes and their semiconductor apphcattons . . A Sherman (Santa Clara, CA, U.S.A.)
135
Kikuchl rings from polycrystalhna platinum films with a (111 ) fiber axis P. Dixlt and R W Vook (Syracuse, NY, U.S.A.)
151
On the problem of elemental Bv material in the interface of native oxide/AraBv structures V I Baly=,T P Smirnova and N. F. Zacharchuk (Novosiblrsk, U.S S R )
157
X-ray and electron microscopy studies of single-layer TaS2 and NbS 2 . C Llu, O. Smgh, P Joansen, A E Curzon and R F Frindt (Burnaby, Canada)
165
LETTER Effect of electron irradiation on crystallization of vacuum-deposited amorphous antimony films. M Hashimoto, A Tabai, S Talima and M Kato (Tokyo, Japan)
L25
ELECTRONICSAND OPTICS Electrical characterization of amorphous germanium dioxide films . . . . . S B Krupanldhl, M Sayer (Kingston, Canada) and A Mansingh (Delhi, India)
173
Switching mechanism in ZnTa films . . . . . . . . . . . . S M. Patal and N. G. Patel (Vallabh Vidyanagar, India)
185
Te/CdS thin film diodes . . . . . . . . . . . . I Gunal and M E Ozsan (Ankara, Turkey)
189
Magnetic properties of sputtered Co-lr thin films M Kitada, S. Asada and N. Shimlzu (Tokyo, Japan)
199
PREPARATION A N D
CHARACTERIZATION
Epltaxial growth of erbium dlhydride films M. S. Rahman Khan (Zaria, Nigeria)
207
Influence of annealing on the phase composition, transmission and resistivity of SnOx thin films G. Beensh-Marchwtcka, L KrbI-Stgpniewska and A. Misiuk (Wroctaw, Poland)
215
Characterization of chemically vapor deposited Nl-(0 05-0.20 wt.%) B alloys M Skibo (San Diego, CA, U.S.A.) and F. A Greuhch (Livermore, CA, U.S A.)
225
Vacuum-deposited amorphous phthalem films . A. Morinaka and S. Oikawa (Ibaraki, Japan)
235
.
.
.
.
.
Oxidation of very thin copper films investigated by optical transmittance S Santuccl and P. Pmozzl (L'Aquila, Italy)
243
Thermally stimulated discharge current studies of acrylic-acid-doped polystyrene films I. M. Talwar (Kurukshetra, India), H. C Stnha and A. P. Srivastava (Sagar, India)
251
GENERAL FILM BEHAVIOUR
Propagation of epitaxial power of micas through gold thin films S. Folgueras, F A. P Da Costa and M. A Hoyos (S~o Paulo, Brazil)
257
ELECTRONICS AND OPTICS The effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous silicon thin films . . . . P Chaudhurl, S Ray and A K Barua (Calcutta, India) ,,
261
348
CONTENTS
METALLURGICAL AND PROTECTIVE COATINGS
Stress In chemically vapour-deposlted silicon films J Adamczewska and T BudzyfiSkl (Warsaw, Poland)
271
Stress modification m cerous fluoride films through admixture with other fluoride compounds S F Pelhcorl (Goleta, CA, U S A )
287
PREPARATION AND CHARACTERIZATION
Some reflect=on high energy electron diffraction and depth-selectwe Mossbauer spectroscopy mvest=gat~ons on the structures in evaporated thin tin films before and after their heating in vacuum S K Penevaand K D Djuneva (Sofia, Bulgar=a) Growth of monocrystalhne silicon islands on insulating substrates W Scharff, J -W Erben, A. Wolf, M. Heber, C Hamann, C Welssmantel (KarI-Marx-Stadt, G D R ), R Klabes, J Matthal, M Voelskov, R Kogler and W Wleser (Dresden, G D R )
297 327
GENERAL FILM BEHAVIOUR
Electron-stimulated desorptlon study of hydrogen-exposed aluminum films Ch Park, M Bujorand H Poppa (Moffett Field, CA, U S A )
337
LETTER Solid state electrochromtc cells, optical properties of the sodium tungsten bronze system K Kangand M Green (London, Gt Br=tam)
L29
ERRATUM TO VOL 110
L33
AUTHORINDEX
345