Cumulative subject index for volumes 111–122

Thin Solid Films, (1984) 313-359

313

Cumulative Subject Index for Volumes 111-122 T h e v o l u m e n u m b e r s are g i v e n in b o l d - f a c e t y p e p r e c e d i n g t h e p a g e n u m b e r s .

A Absorbers metal-based tandem, the selection of oxides for, 116, 341 Absorption and dispersion, numerical designing for broad band semitransparent dielectric reflectors taking account of, 111,189 study and realization of a selective absorber Ni-P compound for the photothermal conversion of solar radiation, 115, 1 Acoustics effects of acoustic wave irradiation on chemical vapour deposition, 112, 257 Acrylic acid thermally stimulated discharge current studies of polystyrene films doped with, 113, 251 Activated reactive evaporation microstructure and hardness of Ti(C,N) coatings on steel prepared by, 118, 285 Activation different methods of, comparison of the properties of ion-plated Ti carbide films prepared using, 120, 283 Adhesion and buckling instability of C layers, 120, 109 of coatings using the scratch test, an energy approach to the, 117, 243 improved, between a sputtered alumina coating and a Cu substrate, 114, 311 to materials of technical interest and characterization of r.f. reactively sputtered TiN, 122, 63 promoters of for organic paint, evaluation of plasma polymers of silanes as, 118, 211 strength of at the interface between a metal film and crystalline quartz, 122, 59 Adsorption of CO on thin layers and islands of epitaxial Pd, metal-support interactions during, 116, 23 and desorption and conductivity of sputtered Zn oxide thin films, 121, 95

of gas on thin films of Cr studied by internal stress measurements, 111,303 Agglomerated films of Au, the physical and optical properties of,. 114, 241 Aging model of in reactively deposited thin Ni-Cr films, 116,211 and temperature variation, structural changes of thin fluorocarbon films deposited by glow discharge polymerization due to, 112, 61 Alkali(s) use of Au films as masks for a KOH preferential etch, 120, L79 Alkali metals formation of polymer films on alkali halide substrates, 116, 164 oxidation behaviour of thin evaporated Cu films on alkali halide substrates at room temperature in humid air, 117, 131 Alloying behaviour during of Au, Au-Ge and Au-Ge Ni on GaAs, 114, 379 Alloys Al-rich, diffusion of Si in thin films of, 112, 317 amorphous, microstructures of at the amor phous-crystalline transition, 116, 301 characterization of crystallization in amorphous 2605 SC alloy, 119, 395 continuously composed, target to intermediate target sputiering technique for the preparation of and for doping of amorphous Si, 119, 103 flash-evaporated Pbl ~HgxS, structure of films of, 111,249 and metals, pure, ultramicrohardness experiments on vapour-deposited films of, 119, 375 Aluminium A1 films prepared by metal-organic low pressure chemical vapour deposition, 114, 367 amorphous and crystalline oxides on AI, 122, 131 © Elsevier Sequoia/Printed in The Netherlands

314 deformation and diffusion bonding of aluminide-coated steels, 111, 37 diffusion of Si in Al-rich alloy thin films, 112, 317 the effect of ion-implanted Si on the 1050"C oxidation behaviour of Co Cr-A1 and CoCr-A1-Y compositions, 113, 27 the effects of laser surface processing on the thermally grown oxide scale formed on an Ni Cr-AI-Y composition, 119, 327 elasticity modulus Ef and temperature expansion coefficient ~f of AI thin films measured by a new method, 112, 219 electrical properties of AI20 3 and AIP~Oy dielectric layers on InP, 113, 85 electron-stimulated desorption study of hydrogen-exposed A1 films, 113, 337 ellipsometric and X-ray specular reflection studies on naturally grown overlayers on A1 thin films, 120, 249 the growth of Al2Au crystallites on Al{lll} films, 116, 143 improved adhesion between a sputtered alumina coating and a Cu substrate, 114, 31 l the incorporation of electrolyte byproducts into barrier anodic AI20 3 coatings, l l l , 227 ion beam mixing of A1 films on fused SiO2, 115, 125 microstructure and mechanical properties of TiC-AI20 3 coatings, 118, 293 modelling degradation and failure of Ni-Cr-Al overlay coatings, 119, 281 optical constants of merocyanine dye films evaporated onto At and glass, 121, 7 optimization and microstructural analysis of black-Zn-coated Al solar collector coatings, 113, 47 phase formation and diffusion in V/Al thin film couples prepared under varying deposition conditions, 114, 271 photoluminescence of Alo.4Ga0.6As/GaAs quantum well structures prepared by molecular beam epitaxy, 112, 213 reflection high energy electron diffraction and X-ray studies of AlN films grown on Si(111) and Si(001) by organometallic chemical vapour deposition, 122, 259 space-charge-limited currents in amorphous A120 3 films, 116, 288 spatial distribution of electric charge in Al/AlzO3/metal structures, 120, l structural order in amorphous aluminas, 116, 289 structure of vacuum-deposited thick films of Ni-Cr-Al, 120, 69

THIN SOLID FILMS

surface morphology of diffusion aluminide coatings, 119, 291 thin film AI/AI2Oa/Te metal/insulator/ semiconductor capacitors, 112, 1 TiB2-coated cathode for A1 smelting cells, 119, 241 Amorphous films of AI2° 3, space-charge-limitedcurrents in, 116, 288 of aluminas, structural order in, 116, 289 characterization of crystallization in amorphous 2605 SC alloy, 119, 395 of C produced by magnetron sputtering, properties of, 122, 203 and crystalline films of oxides on A1, 122, 131 defect formation in as revealed by computer simulation, 121, 317 flash-evaporated, of GaAs, GaP and GaSb, characterization of as a function of deposition conditions, 120, 191 Ge, effects of the angle of deposition on shortrange order in, 112, 267 Gedioxide,electrical characterizationof, 113,173 of Ge-S, physical properties and photoinduced changes in, 117, 251 glow-discharge-deposited Si:H, temperature and substrate dependence of the morphology of, 116, 251 hydrogenated C, formed by methane ion beam deposition, electron spectroscopy study of, 120, 231 hydrogenated Si-C alloy, preparation of and their properties, 117, 59 hydrogenated Si, dual-ion-beam sputtering technique for the production of, 120, 215 of hydrogenated Si prepared by chemical vapour deposition, B doping and posthydrogenation effects on optical gaps and Urbach tails of, 115, 263 microstructures of amorphous alloys at the amorphous-crystalline transition, 116, 301 of Ni-P made by electroless deposition, the process of formation of, 116, 279 ofSb, crystallization of, 116, 259 of Sb obliquely deposited in a vacuum of 10- 5 Pa, growth and crystallization of, 115, 309 of Sb prepared by vacuum deposition, dependence of the crystallization rate of on the film thickness, 116, 373 of Se, the influence of doping on the columnar structure of, 116, 249 Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase Si films and applications to power sensors and strain gauges, 112, 7

CUMULATIVE SUBJECT INDEX

semiconductor, the effect of defect structure on the electrical conduction mechanism in, 116, 116 of Si deposited in ultrahigh vacuum, the influence of the structure of on the solid phase epitaxial growth rate, 117, 101 of Si on glass substrates, flash lamp crystallization of, 117, 117 of Si: H. effects of defect states on the photovoltaic properties of cells based on, 116, 250 status of amorphous thin film solar cells, ! 19, 31 thin, and crystalline films of Cu-Ag, electrical resistivity and electron energy loss spectra of, 116, 269 thin, of GaS 3 A m as inorganic photoresists, 120, 75 thin (Gdl_xCOx)l_yMo r some experimental results on the magnetic properties of, 117. 239 thin hydrogenated Si, the effect of mixing hydrogen with silane on the electronic and optical properties of, 113, 261 thin hydrogenated Si I xGex alloy, prepared by planar magnetron sputtering, optical and electrical properties of, 115, 253 thin semiconductor, structural transformations in, induced by electrical nanosecond switching, 112,75 thin Si, the influence of deposition parameters on the properties of produced by the magnetron sputtering method, 112, 51 thin, of tetrahedral materials, defect structures in, 116, 41 undoped and p-type hydrogenated Si carbide, properties of, 121,233 vacuum-deposited phthalein, 113, 235 vacuum-deposited Sb, effect of electron irradiation on crystallization of, 113, L25 Amorphous substrates nucleation and growth characteristics of crystalline deposits on, i12, 149 Analysis analytical characterization of coatings and thin overlayers, 119, 365 surface and thin film techniques of, use of to study metal-organic and metal-polymer interaction: a review, 119, 337 Annealing behaviour due to of sputter-deposited Ni Cr films, influence of the substrate on, 121, 61 change in the structure of sputtered SnO 2 films during, 116, 267 comparison of fast radiation-annealed and isothermally annealed 75As+-implanted layers on Si wafers, 118, 103 the deep level transient spectroscopy measure-

315 ment of S +-implanted InP subjected to with a continuous wave laser. 116, 233 the effect of on the optical properties of In Sn oxide films, 122, 19 the effects of on the structure and composition of electron-beam-evaporated Sn oxide films, 122, 231 electrical properties of V films as a function of the temperature of, 116, 231 flash, of ion-implanted Si with a pulsed Xe lamp and its application for solar cells, 111,105 high temperature, oxygen concentration changes in oxygen-doped Mo films under, 115, 299 influence of on the phase composition, transmission and resistivity of SnOx thin films, 113, 215 of ion-implanted Si-on-insulator films using a scanned graphite strip heater, 115, 19 of La-B films, effect of investigated by Auger electron spectroscopy, 120, 123 rapid thermal, of co-sputtered Ta silicide films, 121.43 resistance, temperature coefficient of resistance and long-term stability of thin N i - C r - S i films subjected to. 116, 205 surface photovoltage investigations of the electronic properties of Si(l 11) surfaces subjected to in high vacuum, 115, 27 thermal, of C films formed by the plasma decomposition of hydrocarbons, study of, 116, 241 of undoped and In-doped films of Zn oxide, studies of, 122, 31 Anthracene single crystals of, photoelectrochemically deposited Ag clusters on the ab surface of, 122, 287 Antimony characterization of flash-evaporated amorphous GaAs, GaP and GaSb films as a function of deposition conditions, 120, 191 crystallization of amorphous Sb films, ! 16, 259 dependence of the crystallization rate of vacuum-deposited amorphous Sb films on the film thickness, 116, 373 effect of electron irradiation on crystallization of vacuum-deposited amorphous Sb films, 113, L25 electrical and optical properties of thin In203:Sn and SnO2:Sb-ln203:Sn films obtained by the hydrolysis method, 112, 313 electrical and thermoelectric properties of Sb2S 3 thin films prepared by the dip-dry method, 122, 93

316

growth and crystallization of amorphous Sb films obliquely deposited in a vacuum of 10- 5 Pa, 115, 309 impurity incorporation into InSb thin films, 116, 200 M6ssbauer effect studies of [(PbxSn I x)~ ,,Sb~,]O2 thin films obtained by reactive sputtering, 112, 237 optical investigations of thin Sb layers during deposition and ion sputtering, 120, 141 preparation and electrical properties of InSb thin films heavily doped with Te, Se and S, 111,351 properties of CdTe films grown on InSb by molecular beam epitaxy, !15, 97 structural and galvanomagnetic properties of thin Sb films, !11,235 studies of the Hall effect in thin SnOz:Sb and InzOa:Sn films obtained by the hydrolysis method, 117, 157 Antireflection treatment for of metal films for optical lithography, ! 19, 75 Aqueous solutions high temperature high pressure dilute, polyimide survival in, 119, 439 Arc spraying composition and microstructure of arc-sprayed 13~'i, Cr steel coatings, 118, 515 low pressure, of reactive materials, 121, 143 oxidation behaviour of arc-sprayed Fe and Ni alloy coatings, 118, 495 Argon geometrical factors of Ar incorporation in SiO2 films deposited by ion beam sputtering, 120, 313 mechanisms of the biased sputtering of Ti in an A r - N 2 mixture, 120, 223 Arsenic alloying behaviour of Au, A u - G e and A u - G e - N i on GaAs, 114, 379 Auger electron spectroscopy study on the interfacial chemical reactions and drive-out diffusion of thin Au/Cr bilayers on GaAs, 115, 43 characteristics of the low-temperaturedeposited SiO2-Ga0.4vlno.53As metal/ insulator/semiconductor interface, 117, 173 characterization of flash-evaporated amorphous GaAs, GaP and GaSb films as a function of deposition conditions, 120, 191 comparison of fast radiation-annealed and isothermally annealed 75As+-implanted layers on Si wafers, 118, 103 dry etching of gratings on spin-coated As2S 3 films, 116, L53

THIN SOLID FILMS

electrical properties of electron-gun-evaporated lnAs thin films, 121,291 electrical properties of plasma-deposited polysiloxane and metal/plasma polysiloxane/GaAs structures, 120, 37 growth of polycrystalline Cd3As 2 films on room temperature substrates by a pulsed-laser evaporation technique, 117, 289 heating effects on GaAs substrate surfaces during the mounting process in the molecular beam epitaxy technique, 122, L97 interfacial reactions between Au thin films and GaAs substrates, 111,149 investigation of the structure of oxide layers on real GaAs surfaces using X-ray diffuse scattering, 121, 69 laser-induced diffusion of Si atoms from Si3N 4 films deposited onto GaAs, 113, 73 metal-organic chemical vapour codeposition of GaAs and Si~C1 x groups: growth of a new amorphous semiconductor, i 17, 299 non-stoichiometry and electronic properties of GaAs(100) surfaces thermally cleaned in ultrahigh vacuum, 120, 133 photoluminescence of Alo.4Gao.6As/GaAs quantum well structures prepared by molecular beam epitaxy, 112, 213 a reflection high energy electron diffraction examination of the defect structure in GaAs(001) films grown by molecular beam epitaxy, 116, 165 s{VatSieofimic contact to GaAs with TiN diffusion barrier~ i19, 5 study on the stoichiometry of polycrystalline thin films of GaAs deposited by r.f. cathodic sputtering, 120, 47 surface photovohage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen, 112, 309 theory of the field-assisted photomagnetoelectric effect in thin films: experiment on n-type GaAs and applications, 114, 335 Tiiq as a high temperature diffusion barrier for As and B, 119, 11 Atomic clusters small helical, contribution to the analysis of electron diffraction diagrams of for the case of two helices, 113, 39 Auger electron spectroscopy analysis by of SiC layers formed by C ion implantation into Si, 122, 165 effect of annealing of La-B films investigated by, 120, 123

317

CUMULATIVE SUBJECT INDEX

and electrical resistance, characteristics of for interdiffusion in Au/metal bilayer films, 112, 139 and electron energy loss spectroscopy for sputtering depth profiles of Ta20~/Ta, a comparison between, 120, 185 and secondary electron emission and work function changes, characterization by of monolayers of Pt and Fe on TiOz(001), 121, 247 study by on the interfacial chemical reactions and drive-out diffusion of thin A u / C r bilayers on GaAs, 115, 43 of thermally nitrided SiO 2 films, fine structure of Si LVV and N K L L signals from, 115, 135 Automation for plasma coating processes, historical review and update to the state of the art of, 118, 445 Azobenzene ordered cast films of a molecular membrane containing, 121, L89

B Barium the preparation of thin film transparent BaFCI: Eu X-ray phosphor, 115, 89 Barriers the incorporation of electrolyte byproducts into barrier anodic AI20 3 coatings, I 1 I, 227 Mo/Si Schottky, preparation of by chemical vapour deposition of Mo onto epitaxial Si substrates, 115, 291 Schottky, heights of, are they really correlated with any other parameter?, I l l , 1 TaSi:,, for low resistivity and high reliability of contacts to shallow diffusion regions in Si, 120, 257 Beryllium hydrogen bombardment of the oxide layer on Be, 121,127 Bias effects and temperature effects on the electrical properties of CdS thin films prepared by r.f. sputtering, 114, 327 Bismuth analysis of various growth procedures for the deposition of Bi2S 3 semiconducting films, 121,151 effect of heat treatment o n the thermoelectric power of Bi thin films, 116, 230 the growth of Bi Fe garnet layers by liquid phase epitaxy, 114, 33 oxidation inhibition in Bi films bombarded with nitrogen ions, i I 1, 219 preparation and X-ray diffraction studies of

compositionally modulated PbTe/Bi films, 111,323 study of the relaxation in the elastoresistance of thin Bi films, 111,293 Bonding diffusion, and deformation of aluminide-coated steels, II1, 37 to the support and mass balance, the effect of on segregation in thin films, 117. 71 Boron B doping and post-hydrogenation effects on optical gaps and Urbach tails of a m o r p h o u s hydrogenated Si films prepared by chemical vapour deposition, 115, 263 characterization of chemically vapour deposited Ni (0.05-0.20wt.%)B alloys, 113, 225 compound formation between polycrystalline Fe and B thin films studied by Auger electron depth profiling, 116, 35 I effect of annealing of La B films investigated by Auger electron spectroscopy, 120, 123 formation of BN by nitrogen ion implantation of B deposits, 117, L63 plasma spray synthesis of TiBz-Fe coatings, 118, 477 resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB z, 119, 23 TiB2-coated cathodes for A1 smelting cells, 119, 241 TiN as a high temperature diffusion barrier for As a n d B , 119,11 transparent B - C - N H thin films formed by plasma chemical vapour deposition, 117, 311 Bose condensation of excitons in semiconducting films, an investigation of the possibility of, 115, 245 Bromine habit and internal structure of multiply twinned A u particles on Ag bromide films, 116, 151 Bronze oxide, thin films of: determination of guest atom concentration by electrochemical titration, 122, LI01 solid state electrochromic cells: optical properties of the Na W bronze system, 113, L29 Buckling instability of, and adhesion of C layers, 120, 109 Burner rigs deposition stress effects on the life of thermal barrier coatings on, 119, 185

C Cadmium CdS solar ceils: the formation of non-stoichio-

318

metric cuprous sulphide by the ion exchange process, 111.121 CdS thin film transistor with Pr~,Ot t as the gate oxide. 112. L5 epitaxial growth of Cd films by the hot-wall technique, 120, L73 growth of polycrystalline Cd3As 2 films oll room temperature substrates by a pulsed-laser evaporation technique, 117. 289 hot-wall epitaxy of CdS thin films and their photoluminescence. 121.75 investigations of the initial stage of the epitaxial growth of CdTe layers, 116, 137 optk!al properties of vacuum-evaporated CdTe thin films, 120, 23 physical properties of thin film CuzS/ ZnxCdt _:,S heterojunction solar cells fabricated by aqueous treatment and solid state reaction. 121, 1 properties of CdTe films grown on InSb by molecular beam epitaxy, 115.97 the properties of electrophoretically deposited layers of CdS, 121.85 regeneration of CdSe thin films after oxygen chemisorption. 111, 175 source drain characteristics and field effect studies of CdS thin film field effect transistor structures, 116, 232 space-charge-limited current measurement of traps in p-type electrochemically deposited CdTe thin films, 112, 301 structural and optical properties of r.f.sputtered CdS thin films. 120.31 the structure and composition of the CdSe (oxidized Ti) interface: an investigation by transmission electron microscopy and electron diffraction, 112. 349 Te/CdS thin film diodes, 113, 189 temperature and bias effects on the electrical properties of CdS thin films prepared by r.f. sputtering, 114, 327 thin film CdS electrolyte cells, 117, 233 Capacitance voltage characteristics and current density voltage characteristics and dielectric breakdown properties of ion-beamsynthesized Si3N. layers, comment on, 114, 319 Capacitors thin film AI/AI2Os/Te metal/insulator/semiconductor, 112, 1 Yb203 thin film,ldielectric behaviourlof)120, 171 Carbon Auger electron spectroscopy analysis of SiC. layers formed by C ion implantation into Si, 122, 165

THIN SOLID FILMS

buckling instability and adhesion of C layers. 120, 109 comparison of properties of Cr3Cz-Ni Cr coatings thermally sprayed from pre-alloyed and mechanically mixed powders, i 18. 507 comparison of the properties of ion-plated Ti carbide films prepared using different activation methods, 120, 283 composition and properties of the so-called "diamond-like'" amorphous C films, ! 18. 311 diamond-like C films of low hydrogen contents made with a mixture of hydrocarbon and reactive gas, 117, 125 effects of 0 2 pressure on the voltage-controlled negative resistance and on the electron emission of C thin film devices with Ag electrodes. 121, 17 electron spectroscopy study of hydrogenated amorphous C films formed by methane ion beam deposition, 120, 231 erosion behavour of physically vapourdeposited and chemically vapour-deposited SiC films coated on Mo during oxygenated Ar beam thinning. 117. 191 metal-organic chemical vapour codeposition of GaAs and Si~,C1_:, groups: growth of a new amorphous semiconductor. 117, 299 metal-support interactions during the adsorption of CO on thin layers and islands of epitaxial Pd, 116, 23 microstructure and hardness of Ti(C,N) coatings on steel prepared by the activated reactive evaporation technique, 118, 285 microstructure and mechanical properties of TiC-AIzOs coatings, 118. 293 morphology and structure of ion-plated TiN. TiC and Ti(C,N) coatings, 118, 243 optical and interfacial electronic properties of diamond-like C films, 119, 121 plasma polymerization of Fe pentacarbonyl with C 2 hydrocarbons, 117, 33 preparation and characterization of C and Ti carbide coatings, 121, 35 preparation and characterization of TiC-coated Mo wall for the JT-60 reactor, 118. 5 preparation of hydrogenated amorphous Si-C alloy films and their properties, 117.59 properties of amorphous C films produced by magnetron sputtering, 122, 203 properties of undoped and p-type hydrogenated amorphous Si carbide films, 121,233 stress relief forms of diamond-like C thin films under internal compressive stress. 112, 41 structural changes of thin fluorocarbon films deposited by glow discharge polymerization

CUMULATIVE SUBJECT INDEX

due to aging and temperature variation. 112, 61 thermal annealing study of C films formed by the plasma decomposition of hydrocarbons, 116, 24l transparent B C N - H thin films formed by plasma chemical vapour deposition, 117, 311 Carriers in polycrystalline simple aromatic hydrocarbon layers, saturated drift velocity of: computer simulation, 120, 179 Catalysts model, ultrathin epitaxial deposits of Pt on NaCI to be used as, 115, 283 Cathodes TiB2-coated, for AI smelting cells, 119. 241 Cathodoluminescence cathodoluminescent garnet layers, 114. 221 Ceramics the medical physiological potential of plasmasprayed ceramic coatings, I 19, 127 metallic and ceramic powders for vacuum plasma spraying, 118. 421 a model for the thermal conductivity of plasmasprayed coatings of, 112, 89 plasma-sprayed wear-resistant ceramic and cermet coating materials, 118, 485 sprayed coatings of, correlation of the physical properties of to the temperature and velocity of the particles travelling in atmospheric plasma jets: measurements, modelling and comparison. 121,303 Cerium stress modification in cerous fluoride films through admixture with other fluoride compounds, 113, 287 Cermets cermet coatings for magnetic fusion reactors, 118, 23 plasma-sprayed wear-resistant ceramic and cermet coating materials, 118, 485 on the properties of plasma-sprayed oxide and metal-oxide coatings, 118, 457 Chalcogenides anomaly of the thickness dependence of photodarkening in amorphous films of, 111. 195 Chemical deposition electrical conduction parameters of thin films of Ni Pobtained by, 112, 289 Chemical functionality predictable, preparation of thin polymer films of using plasma chemistry, 118, 171 Chemical reactions and interdiffusion at ZnSe-(In Sn oxide) interfaces, 121, 51

319 interfacial, and drive-out diffusion of thin Au/Cr bilayers on GaAs, Auger electron spectroscopy study on the, 115, 43 Chemical transport reaction epitaxial films of Fe oxides grown by, 117, 217 Chemical vapour deposition B doping and post-hydrogenation effects on optical gaps and Urbach tails of amorphous hydrogenated Si films prepared by, 115, 263 characterization of Ni (0.05 0.20wt.%)B alloys prepared by, 113, 225 densification of plasma-sprayed oxide coatings by, 118, 437 effects of acoustic wave irradiation on. 112, 257 etch rate behaviour of SiO z films prepared by from silane, oxygen and nitrogen gas mixtures at low temperatures, 114, 291 low pressure, characterization of thin Si nitride films prepared by, 122, 153 low pressure, at quasi-high flow, 114, 295 low temperature, analysis of data for SiO 2 films deposited by in a silane oxidation study, 117, 211 metal-organic chemical vapour codeposition of GaAs and SixC1 -x groups: growth of a new amorphous semiconductor, 117, 299 metal organic low pressure, AI films prepared by, i14, 367 of Mo onto epitaxial Si substrates, preparation of Mo/Si Schottky barriers by, 115, 291 organometallic, reflection high energy electron diffraction and X-ray studies of AIN films grown on Si(111) and Si(001) by, 122, 259 and physical vapour deposition, erosion behaviour during oxygenated Ar beam thinning of SiC films prepared by on Mo, 117, 191 plasma-assisted, processes of, and their semiconductor applications, 113, 135 plasma, transparent B-C N H thin films formed by, 117, 311 stress in Si films prepared by, 113. 271 of W films for metallization of integrated circuits, 122, 243 Chemisorption of molecular sulphur (Sz) on Ni(001), ! 1 I, 129 of oxygen, regeneration of CdSe thin films after, 111,175 Chemography observation of ion and electron bombardment of Si by, 122, L105 Chlorine Hail mobility in doped Si: H,CI films, 116, 311 the preparation of thin film transparent BaFCI: Eu X-ray phosphor, 115, 89 Si deposition from SiCI 4 in a cold r.f. plasma:

320 the effect of doping gases on deposition rates, chlorine content and the morphology of the films, 121, 135 Si films deposited from SiC14 by an r.f. cold plasma technique: X-ray photoelectron spectroscopy and electrical conductivity studies, 119, 349 ultrathin epitaxial deposits of Pt on NaCI to be used as model catalysts, 115, 283 X-ray photoelectron spectroscopy study of C1 incorporation in thermally grown HC1 oxides on Si, 114, 285 Chlorosilanes and hydrocarbons, radical-molecule and ion molecule mechanisms in the polymerization of in r.f. plasmas at low pressures (below 1.0 Torr), 118, 231 Chromium aging model of reactively deposited thin Ni Cr films, 116,211 Auger electron spectroscopy study on the interfacial chemical reactions and drive-out diffusion of thin A u / C r bilayers on GaAs, 115, 43 a closed system fabrication of Cr silicide thin film resistors, 121,259 comparison of properties of Cr3C 2 Ni Cr coatings thermally sprayed from pre-alloyed and mechanically mixed powders, 118, 507 composition and microstructure of arc-sprayed 13°,, Cr steel coatings, 118, 515 the effect of ion-implanted Si on the 1050~C oxidation behaviour of Co Cr AI and Co Cr AI-Y compositions, 113, 27 the effect of microroughness on the optical properties of deposited Cr films, 122, 271 the effect of nitrogen doping on properties of thin 50~oNi 50°oCr films, 116, 221 the effects of laser surface processing on the thermally grown oxide scale formed on an Ni Cr AI-Ycomposition, 119, 327 the effect of ultrasonic vibration on hard Cr plating in a modified self-regulating high speed bath, 120, 153 electrical properties and structure in disordered Ni Cr films, 116, 287 failure of electrodeposited Cr coatings on cast iron substrates, 118, 385 gas adsorption on thin films of Cr studied by internal stress measurements, 111,303 high Cr Co-base coatings for low temperature hot corrosion, 119, 271 hysteresis in resistance variation in ultrathin Cr films in different heating cooling cycles, 116, 204 influence of the substrate on the annealing

THIN SOLID FILMS

behaviour of sputter-deposited Ni Cr films, 121,61 in situ electron microscopy study of structural and electrical changes in N i - C r thin films, 116, 229 internal stress and structure of evaporated Cr and MgF 2 films and their dependence on substrate temperature, 115, 185 intrinsic stress in Cr thin films measured by a novel method, 112, 127 modelling degradation and failure o f N i - C r AI overlay coatings, 119, 281 plasmatron sputtering for the production of high stability NiCr resistive films, 119, 211 resistance, temperature coefficient of resistance and long-term stability of annealed thin Ni Cr Si films, 116, 205 structure and properties of dispersion-strengthened Cr MgO, Cr YzO3, Cr Y and C r - C u condensates, 111,285 structure property relationships in C r / C u and Ti/Ni microlaminate composites, 112, 227 structure of vacuum-deposited thick films of N i - C r - A I , 120, 69 Citral preparation and characterization of a new high quality polymer thin film from, 122, 197 Cladding laser-processed composite metal, for slurry erosion resistance, 118, 73 Coaters vacuum web, the vacuum design of, 119, 217 Coatings adhesion of using the scratch test, an energy approach to the, 117, 243 barrier anodic AI20 3, the incorporation of electrolyte byproducts into, 111,227 brittle wear-resistant, investigations on mechanical behaviour of: theory, 111,201 cermet, for magnetic fusion reactors, 118, 23 C and Ti carbide, preparation and characterization of, 121, 35 diffusion aluminide, surface morphology of, 119, 291 evaluation of, and hot salt corrosion test procedures, 119, 247 for fast breeder reactor components, 118, 31 high Cr Co-base, for low temperature hot corrosion, 119, 271 metallic overlay, microstructural characterization of by high resolution analytical electron microscopy, 119, 383 multilayer, measurement of optical losses and damage thresholds of, 117, 87 Ni Cr-A1 overlay, modelling degradation and

CUMULATIVE SUBJECT INDEX

failure of, 119, 281 plasma-sprayed ceramic, a model for the thermal conductivity of, 112.89 plasma-sprayed, photoacoustic characterization of subsurface defects in, 119, 153 prepared by corona spray pyrolysis, a new technique with an extremely enhanced deposition efficiency, 120, 267 of SiC physically vapour deposited and chemically vapour deposited onto Mo, erosion behaviour of during oxygenated Ar beam thinning, 117, 191 sputtered alumina, improved adhesion between and a Cu substrate. 114, 311 structured selective, 115, 169 and thin overlayers, analytical characterization of, 119, 365 transparent heat mirror, photoenhanced migration of Ag atoms in, 112,359 Cobalt Co silicide formation by ion mixing, 119, 357 the effect of ion-implanted Si on the 1 0 5 0 C oxidation behaviour of C o - C r AI and C o Cr-AI Y compositions, 113, 27 enhanced magneto-optic readout from Gd Co films, 122, L93 some experimental results on the magnetic properties of thin amorphous (Gdl :,Cox) 1 yM%films, 117,239 high Cr Co-base coatings for low temperature hot corrosion, 119, 271 magnetic properties of sputtered Co lr thin films, 113, 199 an X-ray photoelectron spectroscopy study of the diffusion of Fe, Ni and Co through Au films, 114, 349 Composite target properties of MoSi 2 films deposited from a, 118, 139 Composition analysis of for semiconductor thin films using electroanalytical techniques, 120, 205 and microstructure of arc-sprayed 13% Cr steel coatings, !18, 515 and properties of the so-called -diamond-like'" amorphous C films, 118, 311 and structure of the CdSe (oxidized Ti) interface: an investigation by transmission electron microscopy and electron diffraction, 112, 349 and structure of SnOx films, effect of modification of on the electron secondary emission, 116, 327 C o m p o u n d formation between polycrystalline Fe and B thin films

321 studied by Auger electron depth profiling, 116, 351 Computer investigations of micrographs of metal films near their continuity threshold, comments on, 113, 79 Computer model of thin film formation, resistance of semicontinuous thin films based on a, 115, 33 Computer simulation defect formation in amorphous structures as revealed by, 121,317 of saturated drift velocity of carriers in polycrystalline simple aromatic hydrocarbon layers. 120, 179 Condensates dispersion-strengthened Cr MgO, C r - Y 2 0 v Cr Y and C r - C u , structure and properties of, I I I, 285 Conductive phase segregation of in RuO2-based thick resistive films, 121,263 Contacts of low resistivity and high reliability to shallow diffusion regions in Si, a TaSi x barrier for, 120, 257 metal, to trans-polyacetylene, electrical and photovoltaic properties of, 113, 1 stable ohmic contact to G a A s with TiN diffusion barrier, 119, 5 Contamination of substrate surfaces, and charged point defects, the influence of on nucleation, 116, 55 Continuity threshold comments on computer investigations of micrographs of metal films near their, 113, 79 Copper CdS solar cells: the formation of non-stoichiometric cuprous sulphide by the ion exchange process, 111, 121 electrical resistivity and electron energy loss spectra of a m o r p h o u s and crystalline thin Cu Ag films, 116, 269 growth and electrical transport properties of CulnTe 2 thin films, 112, 107 improved adhesion between a sputtered alumina coating and a Cu substrate, 114. 311 kinetic effects in film formation of CulnSe 2 prepared by chemical spray pyrolysis, 115, L4[ microstructures of C u - Z r phases formed by laser surface treatment, 111, 43 an optical study of thermal effects in Cu films, 112,71 oxidation behaviour of thin evaporated Cu films on alkali halide substrates at room

322

temperature in humid air, 11% 131 oxidation of very thin Cu films investigated by optical transmittance, 113, 243 physical properties of thin film Cu2S/ Z n x C d l - x S heterojunction solar cells fabricated by aqueous treatment and solid state reaction, 121, 1 reactive sputtering of thin Cu2S films for application in solar cells, 112, 97 structure and properties of dispersion-strengthened C r - M g O , Cr YzO3. Cr Y and Cr Cu condensates, 111,285 structure-property relationships in C r / C u and Ti/Ni microlaminate composites, 112,227 transmission electron microscopy and X-ray photoelectron spectroscopy investigations of the Mo CuInSe 2 interface, 116, L59 Corrosion hot salt, test procedures for and coating evaluation, 119, 247 low temperature hot, high Cr Co-base coatings for, 119, 271 Couples A g / T e thin film diffusion, room temperature diffusion and AgzTe compound formation in, 116, 163 A u / G a thin film, room temperature interdiffusion study of, 113, 15 V/A1 thin film, prepared under varying deposition conditions, phase formation and diffusion in, 114, 271 Cratering selected area. stationary beam, for high sensitivity depth profiling with a computerized Auger microprobe, 115, 217 Crystalline films and a m o r p h o u s films of oxides on AI, 122, 131 on a m o r p h o u s substrates, nucleation and growth characteristics of, 112, 149 thin, and amorphous films o f C u Ag, electrical resistivity and electron energy loss spectra of, 116, 269 Crystallization of a m o r p h o u s Sb films, 116, 259 characterization of in amorphous 2605 SC alloy, 119, 395 flash lamp, of a m o r p h o u s Si films on glass substrates, 117, 117 and growth of a m o r p h o u s Sb films obliquely deposited in a vacuum of 10 5 Pa, !15, 309 in situ, of amorphous Ge under laser irradiation in a transmission electron microscope, 111. 141 stimulated, of polycrystalline ZnTe films, 122, 297

THIN SOLID FILMS

of vacuum-deposited amorphous Sb films, dependence of the rate of on the film thickhess, 116, 373 of vacuum-deposited a m o r p h o u s Sb films, effect of electron irradiation on, 113, L25 Crystals growth of and incorporation of defects, 116, 75 Current: density voltage characteristics and capacitance voltage characteristics and dielectric breakdown properties of ion-beamsynthesized Si3N,~ layers, comment on, 114, 319 Currents space-charge-limited, in amorphous AI20 3 films, !16, 288 space-charge-limited, measurement using of traps in p-type electrochemically deposited CdTe thin films, 112, 301

D Damage defect-induced laser, of optical thin films, 116, 176 by pulsed lasers, the influence of the thermal and mechanical properties of optical materials in thin film form on their resistance to, 118, 49 thresholds of, and optical losses of multilayer coatings, measurement of, 117, 87 Deep level transient spectroscopy measurement by of S +-implanted l nP annealed with a continuous wave laser, 116, 233 Defects charged point, and contamination of substrate surfaces, the influence of on nucleation, 116, 55 crystal growth and incorporation of, 116, 75 effects of defect states on the photovoltaic properties of a-Si: H cells, 116, 250 the effect of structure of on the electrical conduction mechanism in amorphous semiconductor films, 116, 116 effect of structure of on electrical conduction mechanism in metallic thin films, 116, 113 formation of in amorphous structures as revealed by computer simulation, 121, 317 formation of in thin films by electromigration, 116, 97 laser damage induced by of optical thin films, 116, 176 point, correlations of electrical conductivity with clusters of in thin films, 116, 115 processes of formation of in epitaxial semiconductor films, 116, 99 a reflection high energy electron diflYaction examination of the structure of in GaAs(001)

CUMULATIVE SUBJECT INDEX

films grown by molecular beam epitaxy, 116, 165 structures of in tetrahedral amorphous thin film materials, 116, 41 a study of the influence of the deposition parameters on the density of in thin films, 116, 114 subsurface, in plasma-sprayed coatings, photoacoustic characterization of, 119, 153 surface point, nucleation at, ! 16, 129 Deformation and diffusion bonding of aluminide-coated steels, I11, 37 ofsubstrates and thin film growth, 116, 77 Degradation and failure of Ni Cr-AI overlay coatings, modelling of, 119, 281 of insulation, and anomalous etching phenomena in Si nitride films prepared by plasmaenhanced deposition. 112, 279 Densification of plasma-sprayed oxide coatings by chemical vapour deposition, 118, 437 Deposition angle of, effects of on short-range order in amorphous Ge, 112, 267 characterization of SnS2 films formed from the vapour phase in a closed tube, 121,227 electroless, the process of formation of amorphous Ni-P layers made by, 116, 279 film, in plasma etching, 112, 369 mechanism of, the effect of the on the composition ofsurface films on Si, i12, 329 oblique, growth and crystallization of amorphous Sb films prepared by in a vacuum of 10 -5 Pa, 115, 309 parameters of, a study of the influence of on the defect density of thin films, !16, 114 phase formation and diffusion in V/A1 thin film couples prepared under varying conditions of. 114, 271 reactive, aging model of thin Ni Cr films prepared by, 116, 211 of silicide films, a critical comparison of techniques of, 118, 163 vacuum, amorphous phthalein films prepared by, 113, 235 vacuum, dependence of the crystallization rate of amorphous Sb films prepared by on the film thickness, 116, 373 vacuum, effect of electron irradiation on crystallization of amorphous Sb films prepared by, 113, L25 vacuum, structure of thick films of Ni Cr-AI prepared by, 120, 69

323 vacuum vapour, preparation of stable crystalline surfaces by for subsequent fundamental reaction studies, 115, 155 Depth profiles ion sputter, of polycrystalline metal films, roughness contributions to resolution in, 115, 203 sputtering, ofTa2Os/Ta, a comparison between electron energy loss spectroscopy and Auger electron spectroscopy for, 120, 185 Depth profiling Auger electron, compound formation between polycrystalline Fe and B thin films studied by, 116, 351 high sensitivity, selected area stationary beam cratering for with a computerized Auger microprobe, 115, 217 Design numerical, for broad band semitransparent dielectric reflectors taking dispersion and absorption into account, !11,189 Desorption and adsorption and conductivity of sputtered Zn oxide thin films, 121, 95 anomalous thermal, from polycrystalline Zn oxide films, 121, L85 electron-stimulated, study using of hydrogenexposed AI films, 113, 337 Devices high speed, Ill V structures grown by molecular beam epitaxy for, 118, 117 Diamond optical and interfacial electronic properties of diamond-like C films, 119, 121 Dielectric properties comment on the dielectric breakdown properties, current density-voltage and capacitance-voltage characteristics of ionbeam-synthesized Si3N 4 layers, 114, 319 of poly(vinyl chloride vinyl acetate vinyl alcohol) terpolymer, 120, L83 and thickness of thin films, unambiguous determination of by spectroscopic ellipsometry, 113, 101 of Yb20 3 thin film capacitors, 120, 171 Dielectrics electrical properties of AI20 3 and AlPxOy dielectric layers on lnP, 113, 85 numerical designing for broad band semitransparent dielectric reflectors taking dispersion and absorption into account, 111,189 Diffraction of a lamellar grating, plasma-etched depth measurement of films using, 117, 107 Diffusion

324 bonding by, and deformation of aluminidecoated steels, 111, 37 chemical reaction and interdiffusion at ZnSe(In Sn oxide) interfaces, 121, 51 coefficients of, in metals, the possibility of applying laser irradiation for the determination of, 121, 121 drive-out, and interfacial chemical reactions of thin Au/Cr bilayers on GaAs, Auger electron spectroscopy study on the, 115, 43 electrical resistance and Auger electron spectroscopy characteristics of interdiffusion in Au/metal bilayer films, 112, 139 of Fe, Ni and Co through Au films, an X-ray photoelectron spectroscopy study of, 114, 349 laser-induced, of Si atoms from SiaN 4 films deposited onto GaAs, 113, 73 and phase formation in V/AI thin film couples prepared under varying deposition conditions, 114, 271 at room temperature and Ag2Te compound formation in Ag/Te thin film diffusion couples, 116, 163 shallow, regions of in Si, a TaSi x barrier for low resistivity and high reliability of contacts to, 120, 257 of Si in Al-rich alloy thin films, 112, 317 size effect in, 111,183 study of room temperature interdiffusion in Au/Ga thin film couples, 113, 15 surface morphology of diffusion aluminide coatings, 119, 291 Diffusion barriers resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB 2, 119, 23 TiN as a high temperature diffusion barrier for As and B, 119, 11 TiN, stable ohmic contact to GaAs with, 119, 5 Diodes fabricated from sputtered TiO 2 films on Au, influence of oxygen on the behaviour of, 115, 229 Te/CdS thin film, 113, 189 Dip-dry method electrical and thermoelectric properties of Sb2S 3 thin films prepared by~ 122, 93 Discharge current thermally stimulated, studies using of acrylicacid-doped polystyrene films, 113, 251 Discharges reactive sputtering, preferential ionization in, 115, L45 Discontinuous films comments on computer investigations of micro-

THIN SOLID FILMS

graphs of metal films near their continuity threshold, 113, 79 o f d o p e d Se, the formation of, 116, 131 thin, resistance of based on a computer model of thin film formation, 115, 33 Disordered films of Ni-Cr, electrical properties and structure in, 116, 287 Dispersion and absorption, numerical designing for broad band semitransparent dielectric reflectors taking account of, 111,189 Dispersion strengthening structure and properties of dispersion-strengthe n e d C r MgO, C r - Y 2 0 3,Cr Y a n d C r Cu condensates, 111,285 Doping annealing studies of undoped and In-doped films of Zn oxide, 122, 31 B, and post-hydrogenation effects on optical gaps and Urbach tails of amorphous hydrogenated Si films prepared by chemical vapour deposition, 115, 263 the formation of discontinuous doped Se films, 116, 131 gases used for, the effect of on deposition rates, chlorine content and the morphology of films of Si deposited from SiCI 4 in a cold r.f. plasma, 121,135 Hall mobility in doped Si: H,C1 films, ! 16, 311 the influence of on the columnar structure of amorphous Se films, 116, 249 infusion, conductance changes in inelastic electron tunnelling junctions during, 112, 193 level of, and structure effects on photoelectrochemical properties of thin films of polythiophene and derivatives, 122, 9 with nitrogen, the effect of on properties of thin 50')~,Ni-50'~,~,Cr films, 116, 221 with oxygen, oxygen concentration changes under high temperature annealing of Mo films subjected to, 115, 299 thermally stimulated discharge current studies of acrylic-acid-doped polystyrene films, 113, 251 Double-layer films absorbing, optical analysis of by combined reflection and transmission ellipsometry, 115, 269 thin Au/Cr, on GaAs, Auger electron spectroscopy study on the interfacial chemical reactions and drive-out diffusion of, 115, 43 thin EuS/Pb, magnetic coupling phenomena in, 117,9 of thin film metal/Te, the formation of Te

CUMULATIVE SUBJECT INDEX

compounds in, 115, L49 thin metal, electrical conduction in, 116, 199 of TiSi 2 on polycrystalline Si, oxidation behaviour of, 116, 383 Drift velocity saturated, of carriers in polycrystalline simple aromatic hydrocarbon layers: computer simulation, 120, 179 Dyes merocyanine, optical constants of films of evaporated onto A1 and glass, 121, 7

E Elasticity modulus Ef of, and temperature expansion coefficient :~f of AI thin films measured by a new method, 112. 219 Elastoresistance of thin Bi films, study of the relaxation in the. 111,293 Electrical breakdown comment on the dielectric breakdown properties, current density-voltage and capacitance-voltage characteristics of ion-beamsynthesized Si3N 4 layers, 114, 319 Electrical characterization of amorphous Ge dioxide films, 113, 173 Electrical conductance changes in. of inelastic electron tunnelling junctions during infusion doping, 112, 193 Electrical conduction and growth mechanism of evaporated In films, 120, 15 mechanism of in amorphous semiconductor films, the effect of defect structure on, 116, 116 mechanism of in metallic thin films, effect of defect structure on, 116, 113 mechanism of in sputtered polycrystalline Zn oxide thin films, 117, 19 parameters of in thin films of N i - P obtained by chemical deposition, 112, 289 in polycrystalline metal films, mean free path and effective density of electrons taking part in, 121. 201 in thin double-layer metal films, 116, 199 Electrical conductivity and adsorption and desorption of sputtered Zn oxide thin films, 121, 95 correlations of with point defect clusters in thin films, !16, 115 in Langmuir-Blodgett films of porphyrins: inplane and through-the-film studies, 113, 115 and morphology of thin films of tetrathiofulvalinium-tet racyanoq uinodimethane.

325 relations between. 111.7 of quench-condensed In films, effect of grain boundary electron scattering on. 122. 1 thickness-dependent, of near-stoichiometric V20 5 films deposited from gels. 121.29 Electrical isolation and relative motion in a vacuum environment. selection and qualification of materials for. !19. 113 Electrical measurements on ice thin films near the cubic --, hexagonal phase transformation. 112. 17 Electrical properties of AI20 3 and AIPxOy dielectric layers on InP. 113, 85 of CdS thin films prepared by r.f. sputtering, temperature and bias effects on, 114, 327 changes in, and structural changes in N i - C r thin films, in situ electron microscopy study of, 116, 229 of electron-gun-evaporated InAs thin films, 121,291 of Fe garnet films, 114, 109 and growth ofAgGaS z thin films, 111, 17 growth and electrical transport properties of CulnTe: thin films, 112, 107 and growth of plasma-sprayed Si, 119, 67 non-stoichiometry and electronic properties of GaAs(100) surfaces thermally cleaned in ultrahigh vacuum. 120, 133 and optical properties of hydrogenated amorphous Si~ xGe~ alloy thin films prepared by planar magnetron sputtering, 115, 253 and optical properties of hydrogenated amorphous Si Ge films prepared by cosputtering, the compositional dependence of, 119, 59 and optical properties of reactively d.c. magnetron-sputtered ln203:Sn films, 121, 109 and optical properties of thin In203:Sn and SnO2:Sb-In203:Sn films obtained by the hydrolysis method, 112, 313 and photovoltaic properties of metal contacts to trans-polyacetylene. 113, 1 of plasma-deposited polysiloxane and metal/' plasma polysiloxane/GaAs structures, 120, 37 and preparation of epitaxial films of In-doped Pb Sn telluride, 122, 217 and preparation of InSb thin films heavily doped with Te, Se and S. 111,351 and structural properties of electrophoretically deposited layers of CdS, 121, 85

326

and structural properties of InzO3:Sn films, thickness dependence of the, 117, 95 and structure in disordered N i - C r films, 116, 287 and thermoelectric properties of Sb2S 3 thin films prepared by the dip dry method, 122, 93 of V films as a function of the annealing temperature, 116, 23 l Electrical resistance and Auger electron spectroscopy, characteristics of for interdiffusion in Au/metal bilayer films, 112, 139 of semicontinuous thin films based on a computer model of thin film formation, 115, 33 and temperature coefficient of resistance and long-term stability of annealed thin Ni Cr Si films, 116, 205 variation in during the phase transition in AgzSe thin films, 116, 203 variation of in ultrathin Cr films in different heating cooling cycles, hysteresis in, 116, 204 voltage-controlled negative, and the electron emission of C thin film devices with Ag electrodes, effects o f O 2 pressure on the, 121, 17 Electrical resistivity and electron energy loss spectra of amorphous and crystalline thin Cu Ag films, 116, 269 low, and high reliability of contacts to shallow diffusion regions in Si, a TaSi~ barrier for, 120, 257 and oxidation kinetics and diffusion barrier properties of thin film ZrB 2, 119, 23 of oxidized Pr thin films, 120, L69 in PbTe thin films, anomalous temperature dependence of the, 116, 201 and phase composition and transmission of SnOx thin films, influence of annealing on, 113,215 of very thin single-crystal Ti films as a function of temperature, 117, 1 Electric charge in A1/Al203/metal structures, spatial distribution Of, 120, 1 Electroanalytical techniques compositional analyses of semiconductor thin films using, 120, 205 Electrochemical deposition space-charge-limited current measurement of traps in p-type CdTe thin films prepared by, 112, 301 Electrochemical titration determination of guest atom concentration by of oxide bronze thin films, 122, L101

THIN SOLID FILMS

Electrochemistry electrochemical performance of fixed-charge polymer films prepared on electrodes by plasma polymerization, 118, 181 polythiophene and poly(3-methylthiophene) organic photovoltaic cells grown using, 111, 93 Electrochromic cells solid state, and optical properties of the Na W bronze system, 113, L29 Electrodeposited coatings of Cr, failure of on cast iron substrates, 118, 385 Electrodeposition from hydrosonically agitated solutions, 119, 223 Electrodes Ag, effects of 0 2 pressure on the voltagecontrolled negative resistance and on the electron emission of C thin film devices with, 121, 17 zinc oxide transparent, fabricated by r.f. magnetron sputtering, the stability of, 111,167 Electrolysers improved, properties and potential for manufacturing low pressure plasma spraying, 119, 141 Electrolyte(s) the incorporation of byproducts from into barrier anodic AlzO3 coatings, ! 11,227 thin films CdS, cells with, 117, 233 Electromagnetic waves intense opposite, interaction dynamics of dimensionally quantized electrons with, 112, L13 Electromigration defect formation by in thin films, 116, 97 Electron beam evaporation the effects of annealing on the structure and composition of Sn oxide films prepared by, 122, 231 Electron beams surface modification by, 118, 85 Electron bombardment and ion bombardment of Si, observation of by chemography, 122, L105 Electron diffraction reflection high energy, and depth-selective M6ssbauer spectroscopy investigations on the structures in evaporated thin Sn films before and after their heating in vacuum, 113, 297 reflection high energy, examination by of the defect structure in GaAs(001) films grown by molecular beam epitaxy, 116, 165 reflection high energy, and X-ray studies of AIN

327

CUMULATIVE SUBJECT INDEX

films grown in Si( 11 l) and Si(001 ) by organometallic chemical vapour deposition, 122, 259 reflection, study by on some metal oxide solar collector coatings, 119, 413:121,279 in small helical atomic clusters, contribution to the analysis of diagrams of for the case of two helices, 113, 39 and transmission electron microscopy, an investigation by of the structure and composition of the CdSe (oxidized Ti) interface, 112, 349 and X-ray diffraction of polycrystalline Si films, additional peaks observed in the, IlK 59 Electron energy loss spectroscopy and Auger electron spectroscopy for sputtering depth profiles of Ta2Os/Ta, a comparison between, 120, 185 and electrical resistivity of amorphous and crystalline thin Cu-Ag films, 116, 269 Electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen, surface photovoltage spectroscopy investigation of, 112, 309 interfaciaL and optical properties of diamondlike C films, i19, 121 and optical properties of hydrogenated amorphous Si thin films, the effect of mixing hydrogen with silane on the, 113, 261 of Si(ll 1) surfaces annealed in high vacuum, surface photovoltage investigations of the, 115, 27 Electron microscopy high resolution analytical, microstructural characterization of metallic overlay coatings by, 119, 383 in situ study by of structural and electrical changes in Ni-Cr thin films, 116, 229 and X-ray studies of single-layer TaS2 and NbS2, i13, 165 Electrons conduction, in polycrystalline metal films, mean free path and effective density of, 121,201 dimensionally quantized, interaction dynamics of intense opposite electromagnetic waves with, 112, LI3 effect oI ~rracaiauon with on crystallization of vacuum-deposited amorphous Sb films, 113, L25 emission of and the voltage-controlled negative resistance of C thin film devices with Ag electrodes, effects of 0 2 pressure on the, 121, 17 free, determination of the parameters of in thin films, 112, 175 grain boundary scattering of, effect of on con-

ductivity of quench-condensed In films, 122, 1

influence of multiple scattering on energy loss stragglings for, 111, 83 secondary emission of, effect of composition and structure modification of SnO~ films on the, 116, 327 Electron spectroscopy study by, of hydrogenated amorphous C films formed by methane ion beam deposition, 120, 231 Electrophoresis the properties of layers of CdS deposited by, 121, 85 Ellipsometry and backscattering spectrometry, investigation of ion-implanted semiconductors by, 116, 191 combined reflection and transmission, optical analysis of absorbing double layers by, 115, 269 spectroscopic, unambiguous determination of thickness and dielectric function of thin films by, 113, 101 and X-ray specular reflection, studies using on naturally grown overlayers on AI thin films, 120, 249 Energy approach considering, to the adhesion of coatings using the scratch test, 117, 243 influ.ence of multiple scattering on energy loss stragglings for electrons, 111, 83 Energy beams synthesis induced by, of thin GeS% and GeSe films, 115, 75 Epitaxy see also Molecular beam epitaxy films of Fe oxides grown by using the method of chemical transport reaction, 117, 217 growth of Cd films by using the hot-wall technique, 120, L73 growth by of Er dihydride films, 113, 207 growth by of ultrathin deposits of Pt on NaC1 to be used as model catalysts, 115, 283 hot-wall, of CdS thin films and their photoluminescence, 121, 75 investigations of tile initial stage of the growth of CdTe layers by, 116, 137 liquid phase, the growth of Bi Fe garnet layers by, 114, 33 metal-support interactions during the adsorption of CO on thin layers and islands of Pd grown by, 116, 23 misfit dislocation behaviour in PbTexSel_x/ PbTe heterojunctions grown by, 115, 141 study of the phase transition in hetero-

328 epitaxially grown films of :~-Sn by Raman spectroscopy, 111,375 preparation of Mo/Si Schottky barriers by chemical vapour deposition of Mo onto Si substrates grown by, 115, 291 preparation and properties of epitaxial films of In-doped Pb Sn telluride, 122,217 processes of defect formation in semiconductor films grown by, 116, 99 propagation of epitaxial power of micas through Au thin films, 113, 257 solid phase, the influence of the structure of amorphous Si deposited in ultrahigh vacuum on the rate of growth by, 117, 101 Erbium epitaxial growth of Er dihydride films, 113, 207 Erosion behaviour during of physically vapour-deposited and chemically vapourdeposited SiC films coated on Mo during oxygenated Ar beam thinning, 11% 191 of conventional and ultrafine-grained materials, 118, 321 slurry, laser-processed composite metal cladding for resistance to, !18, 73 Etching anomalous phenomena of, and insulation degradation in Si nitride films prepared by plasma-enhanced deposition, 112, 279 dry, of gratings on spin-coated As2S 3 films, 116, L53 etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures, 114, 291 KOH preferential, use of Au films as masks for, 120, L79 plasma-etched depth measurement of films using the diffraction of a lamellar grating, 117, 107 plasma, film deposition in, 112, 369 reactive, of W silicide in CF 4 0 2 plasma, mechanism of, 118, 149 Europium magnetic coupling phenomena in EuS/Pb thin film double layers, 117, 9 the preparation of thin film transparent BaFCI: Eu X-ray phosphor, 115, 89 Evaporation electrical conduction and growth mechanism of In films prepared by, 120, 15 electron gun, electrical properties of InAs thin films prepared by, 121,291 flash, characterization of amorphous GaAs, GaP and GaSb films prepared by as a func-

THIN SOLID FILMS

tion of deposition conditions, 120, 191 flash, structure of Pb 1 xHgxS alloy films prepared by, I 1 i, 249 influence of substrate temperature on the optical properties of Si films prepared by, 114, L35 oxidation behaviour of thin Cu films prepared by on alkali halide substrates at room temperature in humid air, 117, 131 the preparation of thin film transparent BaFCI: Eu X-ray phosphor by, 115, 89 pulsed-laser, growth of polycrystalline Cd3As 2 films on room temperature substrates by, 117, 289 vacuum, optical properties of CdTe thin films prepared by, 120, 23 vacuum, an X-ray Fourier line shape analysis of hexagonal Te films prepared by at low temperature (133 K), 122, 73 Evolution of implanted oxygen profiles in Si, a model for the, 114, 357 Excitons an investigation of the possibility of Bose condensation of in semiconducting films, 115, 245 Exposure long-term, of plasma-sprayed ZrO2 in high temperature reactor helium, 119, 317

F Failure and degradation of N i - C r - A I overlay coatings, modelling of, 119, 281 of electrodeposited Cr coatings on cast iron substrates, 118, 385 of plasma-sprayed thermal barrier coatings, analysis of, 119, 173 Ferromagnetic resonance characterization of magnetrostrictive metallic glass coatings by, 119, 97 Field effects studies of, and source-drain characteristics for CdS thin film field effect transistor structures, 116, 232 Fission coatings for fast breeder reactor components, 118, 31 Fluorine internal stress and structure of evaporated Cr and MgF2 films and their dependence on substrate temperature, 115, 185 preparation of gas separation membranes by plasma polymerization with fluoro compounds, 118, 187

CUMULATIVE SUBJECT INDEX

the preparation of thin film transparent BaFCI: Eu X-ray phosphor, 115, 89 properties of SnO2:F films prepared on glass substrates by the spraying method, 113, 93 stress modification in cerous fluoride films through admixture with other fluoride compounds, ! 13, 287 structural changes of thin fluorocarbon films deposited by glow discharge polymerization due to aging and temperature variation, 112, 61 Formation film, of CuInSe 2 prepared by chemical spray pyrolysis, kinetics effects in, 115, L41 thin film, resistance of semicontinuous thin films based on a computer model of, 115, 33 Friction and wear, tribological characteristics of thin films and applications of thin film technology for reduction of, 118, 335 Frictional properties and morphological properties of A u - M o S z films sputtered from a compact target, 118, 375 Fuchs Sondheimer expression for the strain gauge coefficient of thin metallic films, 113, L19 Fusion cermet coatings for magnetic fusion reactors, 118, 23 preparation and characterization of TiC-coated Mo wall for the JT-60 reactor, 118, 5 surface preparation of the S-I Spheromak flux core liner, 118, 15

G Gadolinium enhanced magneto-optic readout from G d - C o films, 122, L93 some experimental results on the magnetic properties of thin amorphous (Gd I xCox) I _ r M % films, 117, 239 formation and characterization of Gd silicides, 116, 175 Gallium alloying behaviour of Au, A u - G e and A u - G e - N i on GaAs, 114, 379 amorphous GaS3 A In thin films as inorganic photoresists, 120, 75 Auger electron spectroscopy study on the interfacial chemical reactions and drive-out diffusion of thin Au/Cr bilayers on GaAs, 115, 43 characteristics of the low-temperaturedeposited SiO~-Gao.47In0.53As metal/

329 insulator/semiconductor interface, 117, 173 characterization of flash-evaporated amorphous GaAs, GaP and GaSb films as a function of deposition conditions, 120, 191 electrical properties of plasma-deposited polysiloxane and metal/plasma polysiloxane/GaAs structures, 120, 37 growth and electrical properties ofAgGaS 2 thin films, 111, 17 heating effects on GaAs substrate surfaces during the mounting process in the molecular beam epitaxy technique, 122, L97 interfacial reactions between Au thin films and GaAs substrates, 111,149 investigation of the structure of oxide layers on real GaAs surfaces using X-ray diffuse scattering, 121, 69 laser-induced diffusion of Si atoms from Si3N 4 films deposited onto GaAs, 113, 73 metal-organic chemical vapour codeposition of GaAs and SixC 1_x groups: growth of a new amorphous semiconductor, | 17, 299 non-stoichiometry and electronic properties of GaAs(100) surfaces thermally cleaned in ultrahigh vacuum, 120, 133 photoluminescence of Alo.4Gao.6As/GaAs quantum well structures prepared by molecular beam epitaxy, 112, 213 photostimulated polarization and depolarization in metal-GaSe-metal thin film structures, 117, 81 a reflection high energy electron diffraction examination of the defect structure in GaAs(001) films grown by molecular beam epitaxy, 116, 165 room temperature interdiffusion study of A u / G a thin film couples, 113, 15 stable ohmic contact to GaAs with TiN diffusion barrier, 119, 5 study on the stoichiometry of polycrystalline thin films of GaAs deposited by r.f. cathodic sputtering, 120, 47 surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen, 112, 309 theory of the field-assisted photomagnetoelectric effect in thin films: experiment on n-type GaAs and applications, 114, 335 Galvanomagnetic properties and structural properties of thin Sb films, 111, 235 Garnet cathodoluminescent, layers of, 114, 221

330 Fe, films of, electrical properties of, 114, 109 films of, magnetic and magneto-optical properties of, 114, 69 films of, magneto-optical devices based on, 114, 187 the growth of Bi Fe garnet layers by liquid phase epitaxy, 114, 33 implantation of bubble garnets, 114, 3 magnetic, films of, structural properties of, 114, 45 magnetic, thin films of, microwave properties of, i14, 135 Gas adsorption of on thin fihns of Cr studied by internal stress measurements, !11,303 preparation of membranes for separation of by plasma polymerization with fluoro compounds, 118, 187 Gates CdS thin film transistor with Pr60~ as the gate oxide, 112, L5 Gels thickness-dependent conductivity of nearstoichiometric V20 5 films deposited from, 121, 29 Geometry unit cell, of sputtered Nb films, modifications in caused by high energy ion bombardment, 120, 239 Germanium alloying behaviour of Au, Au-Ge and Au-Ge-Ni on GaAs, 114, 379 the compositional dependence of the optical and electrical properties of hydrogenated amorphous Si-Ge films prepared by cosputtering, 119, 59 effects of the angle of deposition on short-range order in amorphous Ge, 112, 267 electrical characterization of amorphous Ge dioxide films, 113, 173 energy-beam-induced synthesis of thin GeSe 2 and GeSe films, 115, 75 the film growth process in the bias sputtering of superconducting Nb3Ge , 115, 315 in situ crystallization of amorphous Ge under laser irradiation in a transmission electron microscope, 111,141 optical and electrical properties of hydrogenated amorphous Si 1 xGex alloy thin films prepared by planar magnetron sputtering, 115, 253 the ordered overlayer growth of Ge on Si(111) (7 × 7), 111,367 physical properties and photoinduced changes in amorphous Ge-S films, 117, 251

THIN SOLID FILMS

Glass(es) and AI, optical constants of merocyanine dye films evaporated onto, 121, 7 ferromagnetic resonance characterization of magnetostrictive metallic glass coatings, 119, 97 substrates of. flash lamp crystallization of amorphous Si films on, 117, 117 substrates of, properties of SnO2:F films prepared on by the spraying method, 113, 93 Glow discharge temperature and substrate dependence of the morphology ofa-Si: H deposited by, 116, 251 Glow discharge polymerization structural changes of thin fluorocarbon films deposited by, due to aging and temperature variation, 112.61 Gold alloying behaviour of Au, Au Ge and Au-Ge-Ni on GaAs, 114, 379 Auger electron spectroscopy study on the interfacial chemical reactions and drive-out diffusion of thin Au/Cr bilayers on GaAs, 115, 43 electrical resistance and Auger electron spectroscopy characteristics of interdiffusion in Au/metal bilayer films, 112, 139 frictional and morphological properties of Au-MoS2 films sputtered from a compact target, 118, 375 the growth of AIzAu crystallites on AI{lll} films, 116, 143 habit and internal structure of multiply twinned Au particles on Ag bromide films, 116, 151 influence of oxygen on the behaviour of diodes fabricated from sputtered TiO 2 films on Au, 115, 229 interaction ofAu, Pd and Au Pd alloy deposits with oxidized Si(100) substrates, 120, 293 interfacial reactions between Au thin films and GaAs substrates, 111,149 the physical and optical properties of agglomerated Au films, 114, 241 propagation of epitaxial power of micas through Au thin films, 113, 257 room temperature interdiffusion study of Au/Ga thin film couples, 113, 15 use of Au films as masks for a KOH preferential etch, 120, L79 an X-ray photoelectron spectroscopy study of the diffusion of Fe, Ni and Co through Au films, 114, 349 Grain boundaries effect of electron scattering at on conductivity of quench-condensed In films, 122, 1

331

CUMULATIVE SUBJECT INDEX

structure of in thin films, 116, 111 structure of, and void structure of Ti films, the effect of oxygen on, 116, 177 Graphite strip heater scanned, annealing of ion-implanted Si-oninsulator films using a, 115, 19 • Gratings dry etching of on spin-coated AszS a films, 116, L53 Growth of AgInSe2 thin films, I l l , 53 of AlzAu crystallites on Al{ 111 } films, 116, 143 of Bi Fe garnet layers by liquid phase epitaxy, 114, 33 and characterization o f G d silicides, ll6, 175 of Cr silicide thin film resistors in a closed system, 121,259 and crystallization of amorphous Sb films obliquely deposited in a vacuum of 10 5 Pa, 115, 309 of crystals and incorporation of defects, 116, 75 and electrical properties of AgGaS 2 thin films, 111, 17 and electrical properties of plasma-sprayed Si, 119, 67 and electrical transport properties of CulnTe 2 thin films, 112, 107 epitaxial, of Cd films by the hot-wall technique, 120, L73 epitaxial, of CdTe layers, investigations of the initial stage of, 116, 137 epitaxial, o f E r dihydride films, 113, 207 of epitaxial films of Fe oxides by chemical transport reaction, 117, 217 of films, process of, in the bias sputtering of superconducting NbaGe, 115, 315 of films under equilibrium and non-equilibrium conditions, 116, 96 heteroepitaxial, study of the phase transition in films of ct-Sn formed by, using Raman spectroscopy, 111,375 heterogeneous, in transition metal-rare earth films during bias sputter deposition, 118, 93 initial, of metal layers on Mo(110) and W(110) surfaces, a comparison of the, 121,159 kinetics of, and perfection of thin films produced by molecular beam epitaxy, 116, 95 mechanism of, and electrical conduction of evaporated In films, 120, 15 of monocrystalline Si islands on insulating substrates, 113, 327 and nucleation characteristics of crystalline deposits on amorphous substrates, 112, 149 of ordered overlayers of Ge on Si(111) (7 x 7), 111,367

of polycrystalline CdaAs 2 films on room temperature substrates by a pulsed-laser evaporation technique, 117, 289 the process of formation of amorphous Ni P layers made by electroless deposition, 116, 279 propagation of epitaxial power of micas through Au thin films, 113, 257 rheotaxial, on In thin films, 113, L21 simultaneous, of monocrystalline and polycrystalline Si films with controlled parameters, 115, 237 solid phase epitaxial, the influence of the structure of amorphous Si deposited in ultrahigh vacuum on the rate of, 117, 101 of Te compounds in binary thin film metal/Te systems, 115, L49 thermal, X-ray photoelectron spectroscopy study of CI incorporation in HC1 oxides formed on Si by, 114, 285 of thin film Cu2S/ZnxCdl_xS heterojunction solar cells by aqueous treatment and solid state reaction and their physical properties, 121, 1 of thin films and substrate deformation, 116, 77 various procedures of, for the deposition of Bi2S 3 semiconducting films, analysis of, 121, 151

H Hafnium Hf nitride coatings prepared by very high rate reactive sputtering, 118, 279 ion-plated HfN coatings, 118, 271 Halides formation of polymer films on alkali halide substrates, 116, 164 oxidation behaviour of thin evaporated Cu films on alkali halide substrates at room temperature in humid air, 117, 131 Hall effect in thin SnO2:Sb and In203:Sn films obtained by the hydrolysis method, studies of, 117, 157 Hall mobility in doped Si: H,CI films, 116, 311 Hard coatings wear-resistant, deposition of by reactive d.c. plasmatron sputtering, 118, 255 Hardness measurements of in thin films, 114, 257 and microstructure of Ti(C,N) coatings on steel prepared by the activated reactive evaporation technique, 118, 285 ultramicrohardness experiments on vapour-

332 deposited films of pure metals and alloys, 119, 375 Heat performance of thermal barrier coatings in high heat flux environments, 119, 195 Helium long-term exposure of plasma-sprayed ZrO2 in high temperature reactor helium, 119, 317 Heterojunctions epitaxially grown PbTexSel -x/PbTe, misfit dislocation behaviour in, 115, 141 Hot-wall epitaxy of Cd films, 120, L73 of CdS thin films and their photoluminescence, 121, 75 Hydrocarbon(s) and chlorosilanes, radical-molecule and ion molecule mechanisms in the polymerization of in r.f. plasmas at low pressures (below 1.0Torr), 118, 231 Cz, plasma polymerization of Fe pentacarbonyl with, 117, 33 polycrystalline simple aromatic, layers of, saturated drift velocity of carriers in: computer simulation, 120, 179 and reactive gas, diamond-like C films of low hydrogen contents made with a mixture of, 117, 125 thermal annealing study of C films formed by the plasma decomposition of, 116, 241 Hydrogen B doping and post-hydrogenation effects on optical gaps and Urbach tails of amorphous hydrogenated Si films prepared by chemical vapour deposition, i15, 263 changes in Si samples bombarded by 900 2300 eV hydrogen ions, 111,277 the compositional dependence of the optical and electrical properties of hydrogenated amorphous Si-Ge films prepared by cosputtering, 119, 59 diamond-like C films of low hydrogen contents made with a mixture of hydrocarbon and reactive gas, 117, 125 dual-ion-beam sputtering technique for the production of hydrogenated amorphous Si, 120, 215 the effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous Si thin films, 113, 261 effects of defect states on the photovoltaic properties of a-Si: H cells, 116, 250 electron spectroscopy study of hydrogenated amorphous C films formed by methane ion beam deposition, 120, 231

THIN SOLID FILMS

electron-stimulated desorption study of hydrogen-exposed AI films, ! 13, 337 epitaxial growth ofEr dihydride films. 113. 207 Hail mobility in doped Si: H,C1 fihns, !16, 311 hydrogen bombardment of the oxide layer on Be, 121,127 hydrogen plasma interactions with Sn oxide surfaces, 117, 149 optical and electrical properties of hydrogenated amorphous Si~ ~,Ge~ alloy thin films prepared by planar magnetron sputtering, 115,253 preparation of hydrogenated amorphous Si C alloy films and their properties, 117, 59 properties of undoped and p-type hydrogenated amorphous Si carbide films, 121,233 quantification of H in surfaces and thin films using a non-destructive forward-scattering technique, 119, 429 temperature and substrate dependence of the morphology of glow-discharge-deposited a-Si: H, 116, 251 transparent B C-N H thin films formed by plasma chemical vapour deposition, 117, 311 X-ray photoelectron spectroscopy study of CI incorporation in thermally grown HCI oxides on Si, 114, 285 Hydrolysis electrical and optical properties of thin In203:Sn and SnO2:Sb-In203:Sn films obtained by, 112,313 studies of the Hall effect in thin SnO2:Sb and In203:Sn films obtained by, 117, 157 Hydrophobic films plasma-initiated graft polymerization of watersoluble vinyl monomers onto, and its application to metal absorbing fihns, 118, 197 Hydrosonic agitation electrodeposition from hydrosonically agitated solutions, 119, 223 Hysteresis in resistance variation in ultrathin Cr films in different heating cooling cycles, 116, 204

I Ice electrical measurements on thin films of near the cubic--* hexagonal phase transformation, 112, 17 Impurities incorporation of into InSb thin films, 116, 200 Indium annealing studies of undoped and In-doped films of Zn oxide, 122, 31

CUMULATIVE SUBJECT INDEX

characteristics of the low-temperaturedeposited SiO2-Gao.4vIn0.s3As metal/insulator/semiconductor interface, 117, 173 chemical reaction and interdiffusion at ZnSe-(In Sn oxide) interfaces, 121, 51 correlations between the structural and physical properties of In Sn oxide thin films and their preparation parameters, 116~ 202 the deep level transient spectroscopy measurement of Sn +-implanted InP annealed with a continuous wave laser, 116, 233 deposition of transparent conducting In Sn oxide thin films by reactive ion plating, 115, 195 development of InP-based solar cells with l n - S n oxide films prepared by reactive d.c. sputtering, 119, 1 the effect of annealing on the optical properties of In Sn oxide films, 122, 19 effect of grain boundary electron scattering on conductivity of quench-condensed In films, 122, 1 electrical conduction and growth mechanism of evaporated In films, 120, 15 electrical and optical properties of thin InzO3:Sn and SnO2:Sb-ln203:Sn films obtained by the hydrolysis method, 112, 313 electrical properties of AI20 3 and AIPxOy dielectric layers on InP, 113, 85 electrical properties of electron-gun-evaporated InAs thin films, 121,291 electrical size effect in polycrystalline In films, 116, 317 growth of AglnSe2 thin films, 111, 53 growth and electrical transport properties of CulnTe 2 thin films, 112, 107 impurity incorporation into InSb thin films, 116, 200 kinetic effects in film formaton of CuInSe 2 prepared by chemical spray pyrolysis, 115, L41 optical and electrical properties of reactively d.c. magnetron-sputtered InzO3:Sn films, 121,109 preparation and electrical properties of InSb thin films heavily doped with Te, Se and S, 111,351 preparation and optical properties of LiInS2 thin films, 111,331 preparation and properties of epitaxial films of In-doped Pb Sn telluride, 122, 217 properties of CdTe films grown on InSb by molecular beam epitaxy, 115, 97 properties of thin In20 3 and SnO2 films prepared by corona spray pyrolysis, and a dis-

333 cussion of the spray pyrolysis process, 120, 275 rheotaxial growth on In thin films, 113, L21 studies of the Hall effect in thin SnO2:Sb and In203:Sn films obtained by the hydrolysis method, 117, 157 thickness dependence of the electrical and structural properties of In203:Sn films, 117, 95 TiO2/(indium tin oxide) multilayer film: a transparent IR reflector, 116, L55 transmission electron microscopy and X-ray photoelectron spectroscopy investigations of the M o - C u l n S e 2 interface, 116, L59 Industry ion beam modification of materials for, 118, 61 Inhomogeneities weak, in TiO 2 layers, the interpretation of, 116, 234 Insulation degradation of, and anomalous etching phenomena in Si nitride films prepared by plasma-enhanced deposition, I 12, 279 Insulators growth of monocrystalline Si islands on substrates which are, 113, 327 Integrated circuits chemical vapour deposition of W films for metallization of, 122, 243 Interfaces between a metal film and crystalline quartz, adhesive strength of, 122, 59 CdSe-(oxidized Ti), an investigation of the structure and composition of by transmission electron microscopy and electron diffraction, 112, 349 chemical reactions at and drive-out diffusion of thin Au/Cr bilayers on GaAs, Auger electron spectroscopy study on the, 115, 43 Mo-CuInSe2, transmission electron microscopy and X-ray photoelectron spectroscopy investigations of, 116, L59 reactions at, between Au thin films and GaAs substrates, 111,149 SiO2 Gao.471no.53As, characteristics of in lowtemperature-deposited metal/insulator/ semiconductor structures, 117, 173 ZnSe (In Sn oxide), chemical reaction and interdiffusion at, 121, 51 Ion beams comment on the dielectric breakdown properties, current density-voltage and capacitance voltage characteristics of Si3N 4 layers synthesized using, 114, 319 dual-ion-beam sputtering technique for the production of hydrogenated amorphous Si, 120,

334

215 in methane, electron spectroscopy study of hydrogenated amorphous C films formed by deposition using, 120, 231 mixing by of A1 films on fused SiO 2, 115, 125 modification of materials for industry using, 118, 61 nitriding using, of high purity Fe surfaces, 112, 29 Ion bombardment and electron bombardment of Si, observation of by chemography, 122, L105 erosion behaviour of physically vapourdeposited and chemically vapour-deposited SiC films coated on Mo during oxygenated Ar beam thinning, 117, 191 high energy, modifications in the unit cell geometry of sputtered Nb films caused by, 120, 239 with hydrogen of the oxide layer on Be, 121, 127 by 900-2300 eV hydrogen ions, changes in Si samples due to, 111,277 Ion exchange the formation of non-stoichiometric cuprous sulphide by: CdS solar cells, 111, 121 Ion implantation annealing of ion-implanted Si-on-insulator films using a scanned graphite strip heater, 115, 19 application of to improve the wear resistance of 52100 bearing steel, 122, 279 of bubble garnets, 114, 3 of C into Si, Auger electron spectroscopy analysis of SiC layers formed by, 122, 165 the effect of ion-implanted Si on the 1050°C oxidation behaviour of Co-Cr-AI and CoCr AI-Y compositions, i13, 27 flash annealing of Si subjected to, with a pulsed Xe lamp and its application for solar cells, 111,105 high dose oxygen, volume changes of Si thin surface layers during, 111, 59 investigation by ellipsometry and backscattering spectrometry of semiconductors subjected to, 116, 191 a model for the evolution of implanted oxygen profiles in Si, 114, 357 of nitrogen into B deposits, formation of BN by, 117, L63 of S +, the deep level transient spectroscopy measurement of InP subjected to and annealed with a continuous wave laser, 116, 233 Ionization heating effects in processes assisted by, 117, 261 preferential, in reactive sputtering discharges,

THIN SOLID FILMS

115, L45 Ion mixing Co silicide formation by, 119, 357 Ion plating comparison of the properties of Ti carbide films prepared by using different activation methods, 120, 283 HfN coatings prepared by, 118, 271 reactive, deposition of transparent conducting In Sn oxide thin films by, 115, 195 Iridium magnetic properties of sputtered Co-Ir thin films, 113, 199 Iron compound formation between polycrystalline Fe and B thin films studied by Auger electron depth profiling, 116, 351 electrical properties of Fe garnet films, 114, 109 epitaxial films of Fe oxides grown by the method of chemical transport reaction, 117, 217 failure of electrodeposited Cr coatings on cast iron substrates, 118, 385 the growth of Bi Fe garnet layers by liquid phase epitaxy, 114, 33 ion beam nitriding of high purity Fe surfaces, 112, 29 monolayers of Pt and Fe on TiO2(001), and their characterization by Auger electron spectroscopy, secondary electron emission and work function changes, 121,247 oxidation behaviour of arc-sprayed Fe and Ni alloy coatings, 118, 495 plasma polymerization of Fe pentacarbonyl with C 2 hydrocarbons, 117, 33 plasma spray synthesis of TiB2-Fe coatings, 118, 477 an X-ray photoelectron spectroscopy study of the diffusion of Fe, Ni and Co through Au films, 114, 349 Irradiation laser, in situ crystallization of amorphous Ge under, in a transmission electron microscope, 111,141 laser, the possibility of applying for the determination of diffusion coefficients in metals, 121, 121 Islands monocrystalline Si, growth of on insulating substrates, 113, 327 PbS, grown on single-crystal substrates, structure of, 116, 3 and thin layers of epitaxial Pd, metal-support interactions during the adsorption of CO on, 116, 23

335

CUMULATIVE SUBJECT INDEX

J Jet engines thermal barrier coatings for jet engine improvement, 119, 301

K Kikuchi rings from polycrystalline Pt films with a ( 111 ) fibre axis, 113, 151 Kinetic effects in film formation of CulnSe2 prepared by chemical spray pyrolysis, 115, L41 Kinetics and film stress of Pt silicide formation on Si, in situ study of, 113, 129 linear, and strain in the oxidation of Si, 122, 191 Krypton oxide rate characterization of high dose Krimplanted Si, 120, 329

L Langmuir-Blodgett films microscopically observed preparation of, 117, 269 monomer, optical observation of structure of, 116, 357 polar, 120, 161 of porphyrins, in-plane and through-the-film studies of electrical conductivity in, 113, 115 Lanthanum effect of annealing of La-B films investigated by Auger electron spectroscopy, 120, 123 Lasers continuous wave, the deep level transient spectroscopy measurement of S+-implanted InP annealed with, i16. 233 defect-induced damage by of optical thin films, 116, 176 diffusion induced by, of Si atoms from Si3N,, films deposited onto GaAs, 113, 73 the effects of laser surface processing on the thermally grown oxide scale formed on an Ni-Cr-AI Y composition, 119, 327 in situ crystallization of amorphous Ge under irradiation by in a transmission electron microscope, 111,141 laser-processed composite metal cladding for slurry erosion resistance, 118, 73 microstructures of Cu Zr phases formed by surface treatment using, 111, 43 on the possibility of applying irradiation by for the determination of diffusion coefficients in metals, 121,121 pulsed, growth of polycrystalline Cd3As2 films on room temperature substrates by an evap-

oration technique using, 117, 289 pulsed, the influence of the thermal and mechanical properties of optical materials in thin film form on their damage resistance to, 118, 49 structural transformations induced by in thin metal films, 116, 117 Lattice parameters slightly varying, method for the quantitative X-ray diffraction analysis of a single-phase sandwich-like crystalline film with, 111,269 Lead anomalous temperature dependence of the resistivity in PbTe thin films, 116, 201 magnetic coupling phenomena in EuS/Pb thin film double layers, 117, 9 misfit dislocation behaviour in epitaxially grown PbTexSel x/PbTe heterojunctions, 115, 141 M6ssbauer effect studies of [(PbxSnl_x) t ySbr]O 2 thin films obtained by reactive sputtering, 112, 237 preparation and properties of epitaxial films of In-doped Pb Sn telluride, 122, 217 preparation and X-ray diffraction studies of compositionally modulated PbTe/Bi films, 111. 323 structure of flash-evaporated Pb t xHg~S alloy films, 111,249 structure of PbS islands grown on single-crystal substrates, 116, 3 Liners S-I Spheromak flux core, surface preparation of, 118, 15 Lithium preparation and optical properties of LilnS/ thin films, 111,331 Lithography optical, antireflection treatment of metal films for. 119, 75

M Magnesium internal stress and structure of evaporated Cr and MgF2 films and their dependence on substrate temperature, 115, 185 structure and properties of dispersion-strengthened Cr-MgO, Cr-YzO 3, Cr Y and C r - C u condensates, 111,285 Magnetic coupling phenomena of, in EuS/Pb thin film double layers, 117, 9 Magnetic devices magneto-optical devices based on garnet films, !14, 187

336 Magnetic films of garnet, structural properties of, 114, 45 thin, of garnet, microwave properties of, 114, 135 Magnetic properties enhanced magneto-optic readout from G d - C o films, 122, L93 and magneto-optical properties of garnet films, 114, 69 of sputtered C o - I r thin films, 113, 199 of sputtered multilayers of Mo/Ni, 122, 183 of thin amorphous (Gdl xCoxh rMor films, some experimental results on the, 117, 239 Magneto-optic properties enhanced magneto-optic readout from G d - C o films, 122, L93 Magnetostriction ferromagnetic resonance characterization of magnetostrictive metallic glass coatings, 119, 97 Masks for a KOH preferential etch, use of Au film, as, 120, L79 Mass balance and bonding to the support, the effect of on segregation in thin films, 117, 71 Mechanical contact mechanical-contact-induced transformation from the amorphous to the partially crystalline state in metallic glass, 118, 363 Mechanical properties of brittle wear-resistant coatings, investigations on : theory, 111, 201 and microstructure of TiC-AlzO 3 coatings, 118, 293 and thermal properties of optical materials in thin film form, the influence of on their damage resistance to pulsed lasers, 118, 49 Medical-physiological potential of plasma-sprayed ceramic coatings, 119, 127 Membranes, azobenzene-containing molecular, ordered cast films of, 121, L89 Mercury structure of flash-evaporated Pbl xHg~S alloy films, 11 I, 249 Merocyanine dye films of evaporated onto AI and glass, optical constants of, 121, 7 Metal absorbing films plasma-initiated graft polymerization of watersoluble vinyl monomers onto hydrophobic films and its application to, 118, 197 Metal/insulator/semiconductor structures low-temperature-deposited, characteristics of

THIN SOLID FILMS

the SiO2-Gao.4vlno.53As interface in, 117, 173 thin film AI/AI203/Te capacitors, 112, 1 Metallic glass mechanical-contact-induced transformation from the amorphous to the partially crystalline state in, 118, 363 Metallization of integrated circuits, chemical vapour deposition of W films for, 122, 243 Metals adhesive strength of the interface between a metal film and crystalline quartz, 122, 59 and alloys, pure, ultramicrohardness experiments on vapour-deposited films of, 119, 375 effect of defect structure on electrical conduction mechanism in thin films of, 116, 113 electrical conduction in thin double-layer films of, 116, 199 electrical and photovoltaic properties of contacts of trans-polyacetylene to, 113, 1 electrical properties of plasma-deposited polysiloxane and metal/plasma polysiloxane/GaAs structures, 120, 37 electrical resistance and Auger electron spectroscopy characteristics of interdiffusion in bilayer films of Au and, 112, 139 films of, antireflection treatment of for optical lithography, 119, 75 films of, comments on computer investigations ofmicrographs of near their continuity threshold, 113, 79 on the formation of Te compounds in, binary thin film metal/Te systems, 115, L49 injection photoconductivity and photovoltage in metal/tetracene/metal sandwich systems, 121,175 laser-induced structural transformations in thin films of, !!6, 117 layers of on Mo(110) and W(I10) surfaces, a comparison of the initial growth of, 121,159 mean free path and effective density of conduction electrons in polycrystalline films of, 121, 201 photostimulated polarization and depolarization in metal GaSe metal thin film structures, 117, 81 on the possibility of applying laser irradiation for the determination of diffusion coefficients in, 121,121 reaction between permalloy and several thin films of, 122, 173 roughness contributions to resolution in ion sputter depth profiles of polycrystalline films of, 115,203

CUMULATIVE SUBJECT INDEX

on the selection of oxides for tandem absorbers based on, 116, 341 spatial distribution of electric charge in Al/Al203/metal structures, 120, 1 and support interactions during the adsorption of CO on thin layers and islands of epitaxial Pd, 116, 23 thin films of, Fuchs-Sondheimer expression for the strain gauge coefficient of, 113, LI9 transport properties of thin films of, 122, 105 use of surface and thin film analysis techniques to study metal-organic and metal-polymer interaction: a review,'119, 337 Micas propagation of epitaxial power of through Au thin films, 113, 257 Microcrystalline films Seebeck and piezoresistance effects in amorphous microcrystalline mixed-phase Si films and applications to power sensors and strain gauges, 112, 7 Micrographs of metal films near their continuity threshold, comments on computer investigations of, 113, 79 Microlaminates structure-property relationships in Cr/Cu and Ti/Ni composites of. 112, 227 Microstructure(s) of amorphous alloys at the amorphous crystalline transition, 116, 301 analysis of, and optimization of black-Zncoated A1 solar collector coatings, 113, 47 and composition of arc-sprayed 13g; Cr steel coatings, 118, 515 of Cu Zr phases formed by laser surface treatment, 111, 43 and hardness of Ti(C,N) coatings on steel prepared by the activated reactive evaporation technique, 118, 285 and mechanical properties of TiC-AI203 coatings, 118, 293 microstructural characterization of metallic overlay coatings by high resolution analytical electron microscopy, 119, 383 and stress in bias-sputtered ZrO/ Y203 films, correlation between, 117. 201 Microwave properties of magnetic garnet thin films, 114, 135 Migration photoenhanced, of Ag atoms in transparent heat mirror coatings, 112, 359 Misfits dislocation behaviour of in epitaxially grown PbTe~Se~ .UPbTe heterojunctions, 115, 141

337 Modelling and measurements and comparison for a correlation of the physical properties of sprayed ceramic coatings to the temperature and velocity of the particles travelling in atmospheric plasma jets, 121,303 Moisture sensors preparation of quaternary N-containing plasma films and their application to, 118, 225 Molecular beam epitaxy growth kinetics and perfection of thin films produced by, 116, 95 photoluminescence of Alo.4Gao.6As/GaAs quantum well structures prepared by, 112, 213 properties of CdTe films grown on lnSb by, 115, 97 a reflection high energy electron diffraction examination of the defect structure in GaAs(001) films grown by, 116, 165 technique of. heating effects on GaAs substrate surfaces during the mounting process in, 122, L97 Ill V structures grown by for high speed devices, 118, 117 Molybdenum a comparison of the initial growth of metal' layers on Mo(110) and W(110) surfaces, 121, 159 erosion behaviour of physically vapourdeposited and chemically vapour-deposited SiC films coated on Mo during oxygenated Ar beam thinning, 117, 191 some experimental results on the magnetic properties of thin amorphous (Gdl xCo,)l yM%films, 117,239 frictional and morphological properties of Au MoSz films sputtered from a compact target, 118, 375 high rate deposition of MoSiz films by selective co-sputtering, 118, 129 magnetic properties of sputtered multilayers of Mo/Ni, 122, 183 morphological and compositional properties of MoSe 2 films prepared by r.f. magnetron sputtering, 116, 367 oxygen concentration changes in oxygen-doped Mo films under high temperature annealing, 115,299 preparation and characterization of TiC-coated Mo wall for the JT-60 reactor, 118, 5 preparation of Mo/Si Schottky barriers by chemical vapour deposition of Mo onto epitaxial Si substrates, ! 15.291 properties of MoSi z films deposited from a

338

composite target, 118, 139 transmission electron microscopy and X-ray photoelectron spectroscopy investigations of the M o - C u l n S e 2 interface, 116, L59 Monolayers of Pt and Fe on TiO2(001): characterization by Auger electron spectroscopy, secondary electron emission and work function changes, 121,247 subsurface particle, and film formation in softenable substrates: techniques and thermodynamic criteria, 111, 65 Monte Carlo simulation of the particle transport process in sputter deposition, 112, 161 Morphology and compositional properties of MoSe2 films prepared by r.f. magnetron sputtering, 116, 367 and conductivity of thin films of tetrathiofulvalinium-tet racyanoquinodimethane, relations between, 111, 7 and deposition rates and chlorine content of Si films deposited from SIC14 in a cold r.f. plasma, the effect of doping gases on, 121, 135 and frictional properties of A u - M o S 2 films sputtered from a compact target, 118, 375 of glow-discharge-deposited a-Si:H, temperature and substrate dependence of the, 116, 251 and structure of ion-plated TiN, TiC and Ti(C,N) coatings, 118, 243 M6ssbauer effect studies using of [(PbxSn I ~)l_ySby]O2 thin films obtained by reactive sputtering, 112, 237 M6ssbauer spectroscopy depth-selective, and reflection high energy electron diffraction investigations on the structures in evaporated thin Sn films before and after their heating in vacuum, 113, 297 Motion relative, and electrical isolation in a vacuum environment, selection and qualification of materials for, 119, 113 Mounting process of, in the molecular beam epitaxy technique, heating effects on GaAs substrate surfaces during, 122, L97 Multilayer(s) alternating, a method for the preparation of, 115, 85 measurement of optical losses and damage thresholds of, 117, 87 sputtered, of Mo/Ni, magnetic properties of, 122, 183

THIN SOLID FILMS

thermal gain of multilayer stacks, 120, 7 TiO2/(indium tin oxide) multilayer film: a transparent IR reflector, 116, L55

N Neutralization ofNa ionsin plasma-deposited SiO2 layers, 121, 271 Neutron diffraction and X-ray diffraction of plasma-sprayed zirconia-yttria thermal barrier coatings, 119, 159 Nickel aging model of reactively deposited thin Ni Cr films, 116, 2t 1 alloying behaviour ofAu, Au Ge and A u - G e Ni on GaAs, 114, 379 characterization of chemically vapourdeposited Ni-(0.05 0.20wt.O~,)B alloys, 113, 225 chemisorption of molecular sulphur ($2) on Ni(001), !11,129 comparison of properties of Cr3C2-Ni Cr coatings thermally sprayed from pre-alloyed and mechanically mixed powders, 118, 507 the effect of nitrogen doping on properties of thin 50~,oNi 50'~,Cr films, 116, 221 the effects of laser surface processing on the thermally grown oxide scale formed on an Ni C r - A b Y composition, 119, 327 electrical conduction parameters of thin films of Ni P obtained by chemical deposition, 112, 289 electrical properties and structure in disordered Ni Crfilms, 116, 287 electroless thin film Ni-P resistors with low temperature coefficients of resistance, 112, L9 influence of the substrate on the annealing behaviour of sputter-deposited N i - C r films, 121, 61 in situ electron microscopy study of structural and electrical changes in Ni Cr thin films, 116, 229 magnetic properties of sputtered multilayers of Mo/Ni, 122, 183 modelling degradation and failure ofNi Cr-AI overlay coatings, i 19, 281 oxidation behaviour of arc-sprayed Fe and Ni alloy coatings, 118, 495 plasmatron sputtering for the production of high stability NiCr resistive films, 119, 211 the process of formation of amorphous Ni P layers made by electroless deposition, 116, 279 resistance, temperature coefficient of resistance

339

CUMULATIVE SUBJECT INDEX

and long-term stability of annealed thin Ni Cr-Si films, 116, 205 structure-property relationships in Cr/Cu and Ti/Ni microlaminate composites, 112, 227 structure of vacuum-deposited thick films of N i - C r AI, 120, 69 study and realization of a selective absorber Ni P compound for the photothermal conversion of solar radiation, 115, 1 an X-ray photoelectron spectroscopy study of the diffusion of Fe, Ni and Co through Au films, 114, 349 Niobium the film growth process in the bias sputtering of superconducting Nb3Ge, 115, 315 modifications in the unit cell geometry of sputtered Nb films caused by high energy ion bombardment, 120, 239 X-ray and electron microscopy studies of singlelayer TaS z and NbS2, i 13, 165 Nitriding ion beam, of high purity Fe surfaces, 112, 29 Nitrogen characterization of low pressure chemically vapour-deposited thin Si nitride films, 122, 153 comment on the dielectric breakdown properties, current den,sity-voltage and capacitance voltage characteristics of ion-beamsynthesized Si3N 4 layers, 114, 319 the effect of nitrogen doping on properties of thin 50%Ni-50%Cr films, 116, 221 effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films, 112, 115 fine structure of SiLVV and N K L L Auger signals for thermally nitrided SiO z films, 115, 135 formation of BN by nitrogen ion implantation of B deposits, 117, L63 Hf nitride coatings prepared by very high rate reactive sputtering, 118, 279 influence of the nitrogen partial pressure on the properties of d.c.-sputtered Ti and titanium nitride films, 111,339 influence of substrate shape on TiN films prepared by reactive sputtering, 111, 313 insulation degradation and anomalous etching phenomena in Si nitride films prepared by plasma-enhanced deposition, 112, 279 ion-plated HfN coatings, 118, 271 laser-induced diffusion of Si atoms from Si3N 4 films deposited onto GaAs, 113, 73 mechanisms of the biased sputtering of Ti in an Ar N 2 mixture, 120, 223

microstructure and hardness of Ti(C,N) coatings on steel prepared by the activated reactive evaporated technique, 118, 285 morphology and structure of ion-plated TiN, TiC and Ti(C,N) coatings, 118, 243 oxidation inhibition in Bi films bombarded with nitrogen ions, 111,219 preparation of quaternary N-containing plasma films and their application to moisture sensors, 118, 225 reactive high rate d.c. sputtering: deposition rate, stoichiometry and features of TiO x and TiN x films with respect to the target mode, 111,259 reflection high energy electron diffraction and X-ray studies of AIN films grown on Si(l l 1) and Si(001) by organometallic chemical vapour deposition, 122, 259 r.f. reactively sputtered TiN: characterization and adhesion to materials of technical interest, 122, 63 stable ohmic contact to GaAs with TiN diffusion barrier, 119, 5 TiN as a high temperature diffusion barrier for As and B, 119, 11 transparent B C - N - H thin films formed by plasma chemical vapour deposition, 117, 31 '1 Nucleation and growth characteristics of crystalline deposits on amorphous substrates, 112, 149 the influence of charged point defects and contamination of substrate surfaces on, 116, 55 at surface point defects, 116, 129

O Optical devices magneto-optical devices based on garnet films, 114, 187 Optical films the influence of the thermal properties and mechanical properties of optical materials in thin film form on their damage resistance to pulsed lasers, 118, 49 thin, defect-induced laser damage of, 116, 176 thin, deposition of by ion beam sputtering, 117, 163 Optical gaps and Urbach tails of amorphous hydrogenated Si films prepared by chemical vapour deposition, B doping and post-hydrogenation effects on, 115, 263 Optical properties of absorbing double layers, analysis of by combined reflection and transmission ellip-

340 sometry, 115, 269 correction method for determining the optical constants of thin films with non-uniform thickness, 116, 235 of d.c. reactively sputtered thin films, 120, 81 of deposited Cr films, effect of microroughness on, 122,271 on the determination of the optical constants n(2) and ~(2) of thin supported films, 122, 45 and electrical properties of hydrogenated amorphous Si I ~Ge~ alloy thin films prepared by planar magnetron sputtering, 115, 253 and electrical properties of hydrogenated amorphous Si-Ge films prepared by cosputtering, the compositional dependence of, 119, 59 and electrical properties of reactively d.c. magnetron-sputtered In203:Sn films, 121,109 and electrical properties of thin InzO3:Sn and SnO2:Sb-ln203:Sn films obtained by the hydrolysis method, 112, 313 and electronic properties of hydrogenated amorphous Si thin films, the effect of mixing hydrogen with silane on the, 113, 261 enhanced magneto-optic readout from G d - C o films, 122, L93 of evaporated Si films, influence of substrate temperature on the, 114, L35 of In Sn oxide films, the effect of annealing on, 122, 19 and interfacial electronic properties of diamond-like C films, 119, 121 magnetic and magneto-optical properties of garnet films, 114, 69 measurement of optical losses and damage thresholds of multilayer coatings, 117, 87 of the Na W bronze system: solid state electrochromic ceils, !13, L29 optical constants of merocyanine dye films evaporated onto AI and glass, 121, 7 and physical properties of agglomerated Au films, 114, 241 and preparation of LilnS2 thin films, 111, 331 and structural properties of r.f.-sputtered CdS thin films, 120, 31 of vacuum-evaporated CdTe thin films, 120, 23 Optical transmittance oxidation of very thin Cu films investigated by, 113, 243 and phase composition and resistivity of SnO x thin films, influence of annealing on, 113, 215 Order short-range, in amorphous Ge, effects of the angle of deposition on, 112, 267

THIN SOLID FILMS

structural, in amorphous aluminas, ! 16, 289 Ordered films cast, of an azobenzene-containing molecular membrane, 121, L89 Organic films electrochemically grown polythiophene and poly(3-methylthiophene) organic photovoltaic cells, 111, 93 relations between the morphology and conductivity of thin films of terathiofulvalinium tetracyanoquinodimethane, 111, 7 Organic substances Al films prepared by metal-organic low pressure chemical vapour deposition, 114, 367 use of surface and thin film analysis techniques to study metal-organic and metal-polymer interaction: a review, 119, 337 Overlayers of Ge, ordered growth of on Si(111) (7 x 7), 111, 367 naturally grown, on AI thin films, ellipsometric and X-ray specular reflection studies on, 120, 249 thin, and coatings, analytical characterization of, 119, 365 Oxidation behaviour during of arc-sprayed Fe and Ni alloy coatings, 118, 495 behaviour during of double layers of TiSi 2 on polycrystalline Si, 116, 383 behaviour during at 1050 :'C of Co Cr AI and C o - C r AI-Y compositions, the effect of ionimplanted Si on the, 113, 27 behaviour during of thin evaporated Cu films on alkali halide substrates at room temperature in humid air, 117, 131 the electrical resistivity of Pr thin films subjected to, 120, L69 inhibition of in Bi films bombarded with nitrogen ions, 111,219 kinetics and resistivity and diffusion barrier properties of thin film ZrB2, 119, 23 of silane, study of by analysis of data for SiO z films deposited by low temperature chemical vapour deposition, 117, 211 of Si: strain and linear kinetics, 122, 191 of SnO films to SnO2, Raman scattering, IR reflectivity and X-ray diffraction studies of, 121,217 of very thin Cu films investigated by optical transmittance, 113, 243 Oxides adhesive strength of the interface between crystalline quartz and a metal film, 122, 59 adsorption, desorption and conductivity of

CUMULATIVE SUBJECT INDEX

sputtered Zn oxide thin films, 121, 95 amorphous and crystalline oxides on Al, 122, 131 annealing studies of undoped and In-doped films of Zn oxide, 122, 31 anomalous thermal desorption from polycrystalline Zn oxide films, 121, L85 CdS thin film transistor with Pr6011 as the gate oxide, 112, L5 change in the structure of sputtered SnO 2 films during annealing, 116, 267 characteristics of the low-temperaturedeposited SiO 2 Gao..71no.53As metal/insulator/semiconductor interface, 117, 173 chemical reaction and interdiffusion at ZnSe(In Sn oxide) interfaces, 121, 51 chemical vapour deposition densification of plasma-sprayed oxide coatings, 118, 437 a comparison between electron energy loss spectroscopy and Auger electron spectroscopy sputtering depth profiles of Ta2Os/Ta, 120, 185 conduction mechanism in sputtered polycrystalline Zn oxide thin films, 117, 19 correlation between the stress and microstructure in bias-sputtered ZrOE-Y203 films, 117, 201 correlations between the structural and physical properties of In Sn oxide thin films and their preparation parameters, 116, 202 deposition of transparent conducting In Sn oxide thin films by reactive ion plating, 115, 195 development of InP-based solar cells with In Sn oxide films prepared by reactive d.c. sputtering, 119, 1 dielectric behaviour of Yb20 3 thin film capacitors, 120, 171 the effect of annealing on the optical properties ofln Sn oxide films. 122. 19 effect of composition and structure modification of SnOx films on the electron secondary emission, 116, 327 the effects of annealing on the structure and composition of electron-beam-evaporated Sn oxide films, 122, 231 the effects of laser surface processing on the thermally grown oxide scale formed on an Ni-Cr-AI-Y composition, 119, 327 electrical characterization of amorphous Ge dioxide films, 113, 173 electrical and optical properties of thin In203:Sn and SnO2:Sb-lnzO3:Sn films obtained by the hydrolysis method, 112, 313 electrical properties of A120 3 and A1PxOr

341 dielectric layers on InP, 113, 85 epitaxial films of Fe oxides grown by the method of chemical transport reaction, 117, 217' etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures, 114, 291 fine structure of Si LVV and N KLL Auger signals for thermally nitrided SiO 2 films, 115, 135 geometrical factors of Ar incorporation in SiO 2 films deposited by ion beam sputtering, 120, 313 highly oriented ZnO films obtained by d.c. reactive sputtering ofa Zn target, 120, 55 hydrogen bombardment of the oxide layer on Be, 121,127 hydrogen plasma interactions with Sn oxide surfaces, 117, 149 improved wear resistance of Zr by enhanced oxide films, 118, 351 the incorporation of electrolyte byproducts into barrier anodic A120 3 coatings, 111,227 influence of annealing on the phase composition, transmission and resistivity of SnOx thin films, 113, 215 influence of oxygen on the behaviour of diodes fabricated from sputtered TiO2 films on Au, 115, 229 interaction of Au, Pd and Au-Pd alloy deposits with oxidized Si(100) substrates, 120, 293 the interpretation of weak inhomogeneities in TiO 2 layers, 116, 234 investigation of the structure of oxide layers on real GaAs surfaces using X-ray diffuse scattering, 121, 69 ion beam mixing of Al films on fused SiO2, 115, 125 long-term exposure of plasma-sprayed ZrO2 in high temperature reactor helium, 119, 317 metal-support interactions during the adsorption of CO on thin layers and islands of epitaxial Pd, 116, 23 microstructure and mechanical properties of TiC-AI20 3 coatings, 118, 293 monolayers of Pt and Fe on TiO2(001), and their characterization by Auger electron spectroscopy, secondary electron emission and work function changes, 121,247 M6ssbauer effect studies of [(Pb~Sn~-x)l_ySby]O 2 thin films obtained by reactive sputtering, 112, 237 the neutralization of Na ions in plasmadeposited SiO 2 layers, 121,271

342 neutron and X-ray diffraction of plasmasprayed zirconia-yttria thermal barrier coatings, 119, 159 optical and electrical properties of reactively d.c. magnetron-sputtered In203:Sn films, 121,109 oxide bronze thin films: determination of guest atom concentration by electrochemical titration, 122, LI01 oxide powders for plasma spraying- the relationship between powder characteristics and coating properties, 118, 467 oxide rate characterization of high dose Krimplanted Si, 120, 329 photoelectrochemicat properties of plasmadeposited TiO2 thin films, 115, 13 on the problem of elemental Bv material in the interface of native oxide/AraB v structures, 113, 157 on the properties of plasma-sprayed oxide and metal-oxide coatings, 118, 457 properties of SnOz:F films prepared on glass substrates by the spraying method, 113, 93 properties of thin In20 3 and SnO 2 films prepared by corona spray pyrolysis, and a discussionof the spray pyrolysis process, 120, 275 reactive high rate d.c. sputtering of, 119, 203 reactive high rate d.c. sputtering: deposition rate, stoichiometry and features of TiO~ and TiN x films with respect to the target mode, 111,259 a reflection electron diffraction study on some metal oxide solar collector coatings, 119, 413, 121,279 on the segregation of the conductive phase in RuO2-based thick resistive films, 121,263 on the selection of oxides for metal-based tandem absorbers, 116, 341 silane oxidation study: analysis of data for SiO 2 films deposited by low temperature chemical vapour deposition, 117, 211 Sn dioxide with the CaF 2 structure in thin tin oxide films, 112, 247 SnO films and their oxidation to SnO2, Raman scattering, IR reflectivity and X-ray diffraction studies of, 121,217 space-charge-limited currents in amorphous AI203 films, 116, 288 spatial distribution of electrical charge in Al/A1203/metal structures, 120, 1 the stability of zinc oxide transparent electrodes fabricated by r.f. magnetron sputtering, 111, 167 structural order in amorphous aluminas, 116, 289

THIN SOLID FILMS

the structure and composition of the CdSe (oxidized Ti) interface: an investigation by transmission electron microscopy and electron diffraction, 112, 349 structure and properties of dispersion-strengthened C r - M g O , C r - Y 2 0 3, Cr-Y and C r - C u condensates, 111,285 studies of the Hall effect in thin SnOz:Sb and ln203:Sn films obtained by the hydrolysis method, 117, 157 thickness dependence of the electrical and structural properties of In203:Sn films, 117, 95 thickness-dependent conductivity of nearstoichiometric V20 5 films deposited from gels, 121, 29 thin film AI/AI203/Te metal/insulator/semiconductor capacitors, 112, 1 TiOz/(indium tin oxide) multilayer film: a transparent IR reflector, 116, L55 X-ray photoelectron spectroscopy study of CI incorporation in thermally grown HCI oxides on Si, 114, 285 Oxygen the effect of oxygen on the grain boundary and void structure of Ti films, 116, 177 effects of 0 2 pressure on the voltage-controlled negative resistance and on the electron emission of C thin film devices with Ag electrodes, 121, 17 influence of oxygen on the behaviour of diodes fabricated from sputtered TiO 2 films on Au, 115, 229 a model for the evolution of implanted oxygen profiles in Si, 114, 357 oxygen concentration changes in oxygen-doped Mo films under high temperature annealing, 115, 299 regeneration of CdSe thin films after oxygen chemisorption, 111,175 surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen, 112, 309 volume changes of Si thin surface layers during high dose oxygen implantation, 111, 59

P Paint organic, evaluation of plasma polymers of silanes as adhesion promoters for, 118, 211 Palladium interaction of Au, Pd and A u - P d alloy deposits with oxidized Si(100) substrates, 120, 293 metal-support interactions during the adsorp-

CUMULATIVE SUBJECT INDEX

tion of CO on thin layers and islands of epitaxial Pd, 116, 23 Perfection and growth kinetics of thin films produced by molecular beam epitaxy, 116, 95 Permalloys pattern-plated films of, compositional analysis of, 117, 281 and several thin metal films, reaction between, 122, 173 Phase composition and transmission and resistivity of SnOx thin films, influence of annealing on, 113, 215 Phase formation and diffusion in V/A1 thin film couples prepared under varying deposition conditions, 114, 271 Phase transition(s) in Ag2Se thin films, resistance variation during, 116, 203 amorphous-crystalline, microstructures of amorphous alloys at the, 116, 301 electrical measurements on ice thin films near the cubic ---,hexagonal, 112, 17 in heteroepitaxially grown films of ct-Sn studied by Raman spectroscopy, 111,375 Phosphors thin film transparent BaFCI:Eu X-ray, the preparation of, 115.89 Phosphorus characterization of flash-evaporated amorphous GaAs, GaP and GaSb films as a function of deposition conditions, 120, 191 the deep level transient spectroscopy measurement of S +-implanted InP annealed with a continuous wave laser, 116, 233 development of InP-based solarlcells with InSn oxide films prepared by reactive d.c. sputtering, 119, 1 electrical conduction parameters of thin films of Ni-P obtained by chemical deposition, 112, 289 electrical properties of A120 3 and AIPxOy dielectric layers on InP, 113, 85 electroless thin film Ni-P resistors with low temperature coefficients of resistance, 112, L9 the process of formation of amorphous Ni-P layers made by electroless deposition, 116, 279 study and realization of a selective absorber Ni-P compound for the photothermal conversion of solar radiation, 115, 1 Photoacoustic characterization of subsurface defects in plasma-sprayed coatings, 119, 153 Photoconductivity

343 injection, and photovoltage in metal/tetracene/ metal sandwich systems, 121,175 Photodarkening in amorphous chalcogenide films, anomaly of the thickness dependence of, 111, 195 Photoeffects changes produced by, and physical properties of amorphous Ge-S films, 117, 251 photostimulated polarization and depolarization in metal-GaSe-metal thin film structures, 117, 81 Photoelectrochemical deposition Ag clusters prepared by on the ab surface of anthracene single crystals, ! 22, 287 PhotoelectrochemicaI properties of plasma-deposited TiO2 thin films, 115, 13 of thin films of polythiophene and derivatives: doping level and structure effects, 122, 9 Photoluminescence of Alo.4Ga0.6As/GaAs quantum well structures prepared by molecular beam epitaxy, 112, 213 of CdS thin films prepared by hot-wall epitaxy, 121, 75 Photomagnetoelectric effects field-assisted, theory of the in thin films, and experiment on n-type GaAs and applications, 114, 335 Photoresists inorganic, amorphous GaS3-A m thin films as, 120, 75 Photothermal conversion of solar radiation, study and realization of a selective absorber Ni-P compound for the, 115, 1 Photovoltage and injection photoconductivity in metal/ tetracene/metal sandwich systems, 121, 175 Photovoltaic cells electrochemically grown polythiophene and poly(3-methylthiophene) organic, 111, 93 Photovoltaic properties of a-Si:H cells, effects of defect states on the, 116, 250 and electrical properties of metal contacts to trans-polyacetylene, 113, 1 Phthalein amorphous, vacuum-deposited films of, 113, 235 Physical properties and photoinduced changes in amorphous Ge-S films, 117, 251 and structural properties of In Sn oxide thin films and their preparation parameters, correlations between, ! 16, 202

344 Physical vapour deposition and chemical vapour deposition, erosion behaviour during oxygenated Ar beam thinning of SiC films prepared by on Mo, 117, 191 Piezoelectricity some parametric considerations for piezoelectric sensors with polyvinylidene fluoride films, 112, 203 Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase Si films and applications to power sensors and strain gauges, 112, 7 Plasma(s) correlation of the physical properties of sprayed ceramic coatings to the temperature and velocity of the particles travelling in jets of at atmospheric pressure: measurements, modelling and comparison, 121,303 hydrogen, interactions of with Sn oxide surfaces, 117, 149 Plasma deposition electrical properties of polysiloxane and metal./ plasma polysiloxane/GaAs structures prepared by, 120. 37 historical review and update to the state of the art of automation for plasma coating processes, 118, 445 insulation degradation and anomalous etching phenomena in Si nitride films prepared by plasma-enhanced deposition, 112, 279 low pressure, particle plasma interactions during, 118, 395 the neutralization of Na ions in SiO 2 layers prepared by, 121,271 , photoelectrochemical properties of TiO2 thin films prepared by, 115, 13 plasma-assisted chemical vapour deposition processes and their semiconductor applications, 113, 135 preparation of thin polymer films of predictable chemical functionality using plasma chemistry, 118, 171 a roll-to-roll machine for the production by of tandem amorphous Si alloy solar cells, 119, 55 Si deposition from SiCI4 in a cold r.f. plasma the effect of doping gas on deposition rates, chlorine content and the morphology of the films, 121,135 X-ray photoelectron spectroscopy and electrical conductivity studies, 119, 349 thermal annealing study of C films formed by the plasma decomposition of hydrocarbons. 116, 241 transparent B-C N H thin films formed by

THIN SOLID FILMS

plasma chemical vapour deposition, 117.311 Plasma etching depth of in films, measurement of using the diffraction ofa lamellar grating, !17, 107 film deposition in, i12, 369 reactive etching mechanism of W silicide in CF,,-O 2 plasma, 118, 149 Plasma polymerization electrochemical performance of fixed-charge polymer films prepared on electrodes by 118, 181 evaluation of plasma polymers of silanes as adhesion promoters for organic paint, !18, 211 of Fe pentacarbonyl with C z hydrocarbons, 117, 33 with fluoro compounds, preparation of gas separation membranes by, 118, 187 of hydrocarbons and chlorosilanes in r.f. plasma at low pressures (below 1.0 Torr), radical molecule and ion-molecule mechanisms in, 118, 231 industrial microwave, 118, 203 microwave, advances in basic and applied aspects of, 115, 109 plasma-initiated graft polymerization of watersoluble vinyl monomers onto hydrophobic films and its application to metal absorbing films, 118, 197 preparation of quaternary N-containing plasma films and their application to moisture sensors, 118, 225 Plasma spraying chemical vapour deposition densification of oxide coatings prepared by, 118, 437 low pressure--properties and potential for manufacturing improved electrolysers, 119, 141 a model for the thermal conductivity of ceramic coatings prepared by, 112, 89 oxide powders for the relationship between powder characteristics and coating properties, 118, 467 plasma-sprayed wear resistant ceramic and cermet coating materials, 118, 485 plasma spray synthnesis of TiB2-Fe coatings, 118, 477 on the properties of plasma-sprayed oxide and metal oxide coatings, 118, 457 vacuum, metallic and ceramic powders for, 118, 421 vacuum plasma spray quality control, 118. 409 Plating of hard Cr, the effect of ultrasonic vibration on in a modified self-regulating high speed bath,

CUMULATIVE SUBJECT INDEX

120, 153 pattern, compositional analysis of permalloy films prepared by, 117, 281 Platinum in situ study of film stress and kinetics of Pt silicide formation on Si, 113, 129 Kikuchi rings from polycrystalline Pt films with a ( I 11 ) fibre axis. 113, 151 monolayers of Pt and Fe on TiO2(001 ), and their characterization by Auger electron spectroscopy, secondary electron emission and work function changes, 121,247 ultrathin epitaxial deposits of Pt on NaCI to be used as model catalysts, 115, 283 Polarization and depolarization, photostimulated, in metal GaSe metal thin film structures, 117, 81 Polyacetylene trans-, electrical and photovoltaic properties of metal contacts to, 113. 1 Polycrystalline films of Cd3As2. growth of on room temperature substrates by a pulsed-laser evaporation technique, 117, 289 of In, electrical size effect in, 116, 317 locally grown Si, memory switching effects in, 112, 121 of metal, mean free path and effective density of conduction electrons in, 121,201 of metal, roughness contributions to resolution in ion sputter depth profiles of, 115, 203 of Si and monocrystalline Si films with controlled parameters, the simultaneous growth of, 115, 237 simple aromatic hydrocarbon, saturated drift velocity of carriers in: computer simulation, 120, 179 of Si, oxidation behaviour of double layers of TiSi2 on, 116, 383 sputtered Zn oxide thin, conduction mechanism in, 117, 19 thin, of Fe and B, compound formation between studied by Auger electron depth profiling, 116, 351 thin, of GaAs, study on the stoichiometry of deposited by r.f. cathodic sputtering, 120, 47 Of Zn oxide, anomalous thermal desorption from, 121, L85 ZnTe, stimulated crystallization of, 122, 297 Polyimides survival of in high temperature high pressure dilute aqueous solutions, 119, 439 Polymers electrochemical performance of fixed-charge polymer films prepared on electrodes by

345 plasma polymerization, llg, 181 formation of films of on alkali halide substrates, 116. 164 new high quality, from citral, preparation and characterization of thin film of, 122, 197 plasma, of silanes, evaluation of as adhesion promoters for organic paint, 118, 211 preparation of thin polymer films of predictable chemical functionality using plasma chemistry, 118. 171 use of surface and thin film analysis techniques to study metal-organic and metal polymer interaction: a review, 119. 337 Polysiloxane plasma-deposited, and metal/plasma polysiloxane/GaAs structures, electrical properties of, 120, 37 Polystyrene acrylic-acid-doped films of, thermally stimulated discharge current studies of, 113, 251 Polythiophene and derivatives, photoelectrochemical properties of thin films of: doping level and structure effects, 122, 9 and poly(3-methylthiophene), electrochemically grown organic photovoltaic cells of, 111, 93 Poly(3-methylt hiophene) and polythiophene, electrochemically grown organic photovoltaic cells of, 111, 93 Poly(vinyl chloride-vinyl acetate-vinyl alcohol) terpolymer dielectric behaviour of, 120, L83 Polyvinylidene fluoride some parametric considerations for piezoelectric sensors with polyvinylidene fluoride films, 112, 203 Porphyrins Langmuir-Blodgett films of, in-plane and through-the-film studies of electrical conductivity in, 113, 115 Powders metallic and ceramic, for vacuum plasma spraying, 118, 421 pre-alloyed and mechanically mixed, comparison of properties of Cr3C2-Ni-Cr coatings thermally sprayed from, 118, 507 oxide powders for plasma spraying--the relationship between powder characteristics and coating properties, 118, 467 Praseodymium CdS thin film transistor with Pr6011 as the gate oxide, 112, L5 the electrical resistivity of oxidized Pr thin films. 120, L69

346

Q Quantum well structures Al0.,Gao.6As/GaAs, prepared by molecular beam epitaxy, photoluminescence of, !12, 213 Quartz see Silicon

R Radiation comparison of fast radiation-annealed and isothermally annealed 75As+-implanted layers on Si wafers, 118, 103 Radiative processing incoherent, ofTi silicides, 118, 155 Raman spectroscopy and IR reflectivity and X-ray diffraction, studies by of SnO films and their oxidation to SnO2, 121,217 study of the phase transition in heteroepitaxially grown films of~x-Sn by, 111,375 Rare earths heterogeneous growth in transition metal-rare earth films during bias sputter deposition, 118, 93 Reaction studies fundamental, preparation of stable crystalline surfaces for, 115, 155 Reactors long-term exposure of plasma-sprayed ZrO 2 in high temperature reactor helium, 119, 317 Recoil mixing dynamic, surface texturing of Si by, 117, 223 Reflection X-ray specular, and ellipsometry, studies using on naturally grown overlayers on AI thin films, 120, 249 Reflectivity IR, and Raman scattering and X-ray diffraction, studies by of SnO films and their oxidation to SnO2, 121,217 Reflectors broad band semitransparent dielectric, numerical designing for taking dispersion and absorption into account, 111, 189 transparent IR, TiOx/(indium tin oxide) multilayer film as, 116, L55 Refractive index of thin films of ZnSe in the IR, 112, L1 Regeneration of CdSe thin films after oxygen chemisorption, 111,175 Relaxation in the elastoresistance of thin Bi films, study of, 111,293

THIN SOLID FILMS

Resistive films high stability NiCr, plasmatron sputtering for the production of, 119, 211 RuOz-based thick, on the segregation of the conductive phase in, 121,263 Resistors Cr silicide thin film, a closed system fabrication of, 121,259 electroless thin film Ni P, with low temperature coefficients of resistance, 112, L9 Resolution in ion sputter depth profiles of polycrystalline metal films, roughness contributions to, 115, 2O3 Rheotaxy growth by, on In thin films, 113, L21 Roughness contributions of to resolution in ion sputter depth profiles of polycrystalline metal •ms, 115, 203 micro-, effect of on the optical properties of deposited Cr films, 122, 271 Ruthenium on the segregation of the conductive phase in RuO2-based thick resistive films, 121,263 Rutherford backscattering spectrometry and ellipsometry, investigation of ionimplanted semiconductors by, 116, 191

S Salts hot salt corrosion test procedures and coating evaluation, 119, 247 Scattering multiple, influence of on energy loss stragglings for electrons, 111, 83 quantification of H in surfaces and thin films using a non-destructive forward-scattering technique, 119, 429 X-ray diffuse, investigation of the structure of oxide layers on real GaAs surfaces using, 121, 69 Scratch test an energy approach to the adhesion of coatings using the, 117, 243 Secondary electron emission and Auger electron spectroscopy and work function changes, characterization by of monolayers of Pt and Fe on TiO2(001), 121, 247 Secondary ion mass spectrometry study using of two-layer systems based on Te, 112, 81 Seebeck effect and piezoresistance effects in amor-

CUMULATIVE SUBJECT INDEX

phous-microcrystalline mixed-phase Si films and applications to power sensors and strain gauges, 112, 7 Segregation of the conductive phase in RuOz-based thick resistive films, 121,263 in thin films, the effect of mass balance and bonding to the support on, 117, 71 Selenium chemical reaction and interdiffusion at ZnSe(In Sn oxide) interfaces, 121, 51 energy-beam-induced synthesis of thin GeSe: and GeSe films, 115, 75 the formation of discontinuous doped Se films, 116, 131 growth of AgInSe2 thin films. 111, 53 the influence of doping on the columnar structure of amorphous Se films, 116, 249 kinetic effects in film formation of CulnSe2 prepared by chemical spray pyrolysis, !i5, L41 misfit dislocation behaviour in epitaxially grown PbTexSe~ x/PbTe heterojunctions, 115, 141 morphological and compositional properties of MoSe 2 films prepared by r.f. magnetron sputtering, 116, 367 photostimulated polarization and depolarization in metal-GaSe metal thin film structures, 117, 81 preparation and electrical properties of InSb thin films heavily doped with Te, Se and S, I l l , 351 refractive index of thin films of ZnSe in the IR, 112, LI regeneration of CdSe thin films after oxygen chemisorption, 111,175 resistance variation during the phase transition in Ag2Se thin films, 116, 203 the structure a n d composition of the CdSe(oxidized Ti) interface: an investigation by transmission electron microscopy and electron diffraction, 112, 349 transmission electron microscopy and X-ray photoelectron spectroscopy investigations of the Mo-CulnSe2 interface, 116, L59 Semiconductors analysis of various growth procedures for the deposition of Bi2S3 films of, 121, 151 the effect of defect structure on the electrical conduction mechanism in amorphous films of, 116, 116 epitaxial films of, processes of defect formation in, 116, 99 an investigation of the possibility of Bose con-

347 densation of excitons in films of, 115, 245 ion-implanted, investigation of by ellipsometry and backscattering spectrometry, 116, 191 new amorphous, growth of by metal organic chemical vapour codeposition of GaAs and SixC l ~groups, 117, 299 plasma-assisted chemical vapour deposition processes and their applications, 113, 135 thin film amorphous, structural transformations in induced by electrical nanosecond switching, 112, 75 thin films of, compositional analysis of using electroanalytical techniques, 120, 205 Sensors power, and strain gauges, Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase Si films and applications to, 112, 7 Silane the effect of mixing hydrogen with on the electronic and optical properties of hydrogenated amorphous Si thin films, 113, 261 Silicon additional X-ray and electron diffraction peaks of polycrystalline Si films, 113, 59 adhesive strength of the interface between crystalline quartz and a metal film, 122, 59 annealing of ion-implanted Si-on-insulator films using a scanned graphite strip heater, 115, 19 Auger electron spectroscopy analysis of SiC layers formed by C ion implantation into Si, 122, 165 B doping and post-hydrogenation effects on optical gaps and Urbach tails of amorphous hydrogenated Si films prepared by chemical vapour deposition, 115, 263 changes in Si samples bombarded by 900-2300 eV hydrogen ions, !11,227 characteristics of the low-temperaturedeposited SiO/-Ga0.47Ino.53As metal/insulator/semiconductor interface, 117, 173 characterization of low pressure chemically vapour-deposited thin Si nitride films, 122, 153 a closed system fabrication of Cr silicide thin film resistors, 121,259 comment on the dielectric breakdown properties, current density-voltage and capacitance-voltage characteristics of ion-beamsynthesized Si3N4 layers, 114, 319 comparison of fast radiation-annealed and isothermally annealed ~5As +-implanted layers on Si wafers, 118, 103 the compositional dependence of the optical

348 and electrical properties of hydrogenated amorphous Si Ge films prepared by cosputtering, 119, 59 Co silicide formation by ion mixing, 119,357 a critical comparison of silicide film deposition techniques, 118, 163 diffusion of Si in Al-rich alloy thin films, 112, 317 dual-ion-beam sputtering technique for the production of hydrogenated amorphous Si, 120, 215 the effect of deposition mechanism on the composition of surface films on Si, 112, 329 the effect of ion-implanted Si on the 1050 C oxidation behaviour of Co Cr A1 and Co Cr A1-Ycompositions, 113, 27 the effect of mixing hydrogen with silane on the electronic and optical properties of hydrogenated amorphous Si thin films, 113, 261 effects of defect states on the photovoltaic properties ofa-Si: H cells, 116, 250 erosion behaviour of physically vapourdeposited and chemically vapour-deposited SiC films coated on Mo during oxygenated Ar beam thinning, 117, 191 etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures, 114, 291 evaluation of plasma polymers of silanes as adhesion promoters for organic paint, 118, 211 fine structure of Si LVV and N K L L Auger signals for thermally nitrided SiO 2 films, 115, 135 flash annealing of ion-implanted Si with a pulsed Xe lamp and its application for solar cells, !11, 105 flash lamp crystallization of amorphous Si films on glass substrates, 117, 117 formation and characterization of Gd silicides, 116, 175 geometrical factors of Ar incorporation in SiO z films deposited by ion beam sputtering, 120, 313 growth and electrical properties of plasmasprayed Si, 119, 67 growth of monocrystalline Si islands on insulating substrates, 113, 327 Hall mobility in doped Si: H,CI films, 116, 311 high rate deposition of MoSi 2 films by selective co-sputtering, 118, 129 incoherent radiative processing of Ti silicides, 118, 155 the influence of deposition parameters on the

THIN SOLID FILMS

properties of amorphous Si thin films produced by the magnetron sputtering method, 112,51 the influence of the structure of amorphous Si deposited in ultrahigh vacuum on the solid phase epitaxial growth rate, 117, 101 influence of substrate temperature on the optical properties of evaporated Si films, 114, L35 #t situ study of film stress and kinetics of PI silicide formation on Si, 113, 129 insulation degradation and anomalous etching phenomena in Si nitride films prepared by plasma-enhanced deposition, 112, 279 interaction o f A u , Pd and Au Pd alloy deposits with oxidized Si(100) substrates, 120, 293 ion beam mixing o r a l films on fused SiO2, 115, 125 laser-induced diffusion of Si atoms from Si3N ~ films deposited onto GaAs, 113, 73 memory switching effects in locally grown polycrystalline Si films, 112, 121 metal-organic chemical vapour codeposition of G a A s a n d S i , C ~ ~ groups: growth of a new amorphous semiconductor, 117, 299 a model for the evolution of implanted oxygen profiles in Si, 114, 357 the neutralization of Na ions in plasmadeposited SiO 2 layers, 121,271 observation of ion and electron bombardment of Si by chemography, 122, LI05 optical and electrical properties of hydrogenated amorphous Si,_xGe~ alloy thin films prepared by planar magnetron sputtering, 115, 253 the ordered overlayer growth of Ge on Si( I 1 I ) (7×7),!11,367 oxidation behaviour of double layers of TiSi2 on polycrystalline Si, 116, 383 oxidation of Si: strain and linear kinetics, 122, 191 oxide rate characterization of high dose Krimplanted Si, 120, 329 preparation of hydrogenated amorphous Si C alloy films and their properties, 117.59 preparation of Mo/Si Schottky barriers by chemical vapour deposition of Mo onto epitaxial Si substrates, 115, 291 properties of MoSi2 films deposited from a composite target, 118, 139 properties of undoped and p-type hydrogenated amorphous Si carbide films, 121,233 rapid thermal annealing of co-sputtered Ta silicide films, 121, 43 reactive etching mechanism of W silicidc in

349

CUMULATIVE SUBJECT INDEX

C F 4 0 2 plasma, 118, 149 reflection high energy electron diffraction and X-ray studies of AIN films grown on Si(l I 1) and Si(001) by organometallic chemical vapour deposition, 122, 259 resistance, temperature coefficient of resistance and long-term stability of annealed thin Ni Cr-Si films, ! 16, 205 roll-to-roll plasma deposition machine for the production of tandem amorphous Si alloy solar cells, 119, 55 Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase Si films and applications to power sensors and strain gauges, 112, 7 Si deposition from SiCI 4 in a cold r.f. plasma the effect of doping gases on deposition rates, chlorine content and the morphology of the films. 121, 135 X-ray photoelectron spectroscopy and electrical conductivity studies, 119, 349 silane oxidation study: analysis of data for SiO 2 films deposited by low temperature chemical vapour deposition, 117, 211 the simultaneous growth of monocrystalline and polycrystalline Si films with controlled parameters, 115, 237 stress in chemically vapour-deposited Si films, 113, 271 surface photovoltage investigations of the electronic properties ofSi(111) surfaces annealed in high vacuum, 115, 27 surface texturing of Si by dynamic recoil mixing, 117, 223 target to intermediate target sputtering technique for the preparation of continuously composed alloys and for doping of amorphous Si, 119, 103 a TaSi x barrier for low resistivity and high reliability of contacts to shallow diffusion regions in Si, 120, 257 temperature and substrate dependence of the morphology of glow-discharge-deposited a-Si: H, i16, 251 ~¢olume changes of Si thin surface layers during high dose oxygen implantation, 111, 59 X-ray photoelectron spectroscopy study of C1 incorporation in thermally grown HCI oxides on Si, 114, 285 Silver effects of O z pressure on the voltage-controlled negative resistance and on the electron emission of C thin film devices with Ag electrodes, 121, 17 electrical resistivity and electron energy loss

spectra of amorphous and crystalline thin C u - A g films, 116, 269 growth of AglnSe2 thin films, 111, 53 growth and electrical properties of AgGaS2 thin films, !11, 17 habit and internal structure of multiply twinned Au particles on Ag bromide films, 116, 151 photoelectrochemically deposited Ag clusters on the ab surface of anthracene single crystals, 122, 287 photoenhanced migration of Ag atoms in transparent heat mirror coatings, 112, 359 resistance variation during the phase transition in Ag2Se thin films, 116, 203 room temperature diffusion and Ag2Te compound formation in Ag/Te thin film diffugion couples, 116, 163 Single-crystal films of Si and polycrystalline Si films with controlled parameters, the simultaneous growth of, 115, 237 very thin Ti, electrical resistivity of as a function of temperature, 117, 1 Size effect(s) diffusion, 111,183 electrical, in polycrystalline In films, 116, 317 Smelting cells A1, TiB2-coated cathodes for, 119, 241 Sodium the neutralization of Na ions in plasmadeposited SiO 2 layers, 121,271 solid state electrochromic cells: optical properties of the Na W bronze system, 113, L29 ultrathin epitaxial deposits of Pt on NaCI to be used as model catalysts, 115, 283 Solar absorbers optimization and evaluation of black Zn selective surfaces which are, 115, 51 study and realization of a selective absorber Ni-P compound for the photothermal conversion of solar radiation, 115, 1 Solar cells amorphous thin film, status of, 119, 31 CdS: the formation of non-stoichiometric cuprous sulphide by the ion exchange process, 111, 121 flash annealing of ion-implanted Si with a pulsed Xe lamp and its applicaion for, 111, 105 lnP-based, with In Sn oxide films prepared by reactive d.c. sputtering, development of, 119, 1

reactive sputtering of thin Cu2S films for application in, 112, 97 tandem amorphous Si alloy, roll-to-roll plasma

350 deposition machine for the production of, 119, 55 thin film Cu2S/ZnxCd ~_ xS heterojunction, fabricated by aqueous treatment and solid state reaction, physical properties of, 121, I Solar coatings black-Zn-coated AI, optimization and microstructural analysis of, 113, 47 metal oxide, a reflection electron diffraction study on some, 121,279 a reflection electron diffraction study on some metal oxide solar collector coatings, 119, 413 Source drain characteristics and field effect studies ~)f CdS thin film field effect transistor structures, 116, 232 Spin coating dry etching of gratings on As2S3 films prepared by, 116, L53 Spraying correlation of physical properties of ceramic coatings prepared by to the temperature and velocity of the particles travelling in atmospheric plasma jets: measurements, modelling and comparison, 121,303 properties of SnO2:F films prepared on glass substrates by, 113, 93 thermal, comparison of properties of Cr3C 2 Ni Cr coatings prepared by from pre-alloyed and mechanically mixed powders, 118, 507 Spray pyrolysis chemical, kinetic effects in film formation of CulnSe 2 prepared by, 115, L41 corona, a new coating technique with an extremely enhanced deposition efficiency, 120, 267 corona, properties of thin In20 3 and SnO 2 films prepared by, and a discussion of the spray pyrolysis process, 120, 275 Sputtering adsorption, desorption and conductivity of Zn oxide'thin films prepared by, 121, 95 bias, correlation between the stress and microstructure in ZrO2 Y203 films prepared by, 117,201 bias, heterogeneous growth in transition metal rare earth films during deposition by, 118,93 bias, of superconducting Nb3Ge, the film growth process in, 115, 315 bias, of Ti in an A r - N 2 mixture, mechanisms of, 120, 223 change during annealing in the structure of SnOz films prepared by, 116, 267 conduction mechanism in potycrystalline Zn

THIN SOLID FILMS

oxide thin films prepared by, 117, 19 d.c.. influence of the nitrogen partial pressure on the properties of Ti and titanium nitride films prepared by, II1,339 dual-ion-beam, technique of for the production of hydrogenated amorphous Si, 120, 215 high rate deposition of MoSi 2 films by selective co-sputtering, 118, 129 improved adhesion between an alumina coating prepared by and a Cu substrate, 114, 311 influence of oxygen on the behaviour of diodes fabricated from TiOz films prepared by on Au, 115,229 influence of the substrate on the annealing behaviour of Ni Cr films deposited by, 121, 61 influence of the substrate on the behaviour of Ni Cr thin films deposited by, i16, 219 ion beam, deposition of optical thin films by, 117, 163 ion beam, geometrical factors of Ar incorporation in SiO 2 films deposited by. 120, 313 ion, and deposition, optical investigations of thin Sb layers during, 120, 141 magnetic properties of Co Ir thin films prepared by, 113, 199 magnetic properties of multilayers of Mo/Ni prepared by, 122, 183 magnetron, the influence of deposition parameters on the properties of amorphous Si thin films produced by, 112, 51 magnetron, properties of amorphous C films produced by, 122, 203 modifications in the unit cell geometry of sputtered Nb films caused by high energy ion bombardment, 120, 239 Monte Carlo simulation of the particle transport process in deposition by, 112, 161 planar and cylindrical-post magnetron, sources of, substrate heating rates for, 119, 87 planar magnetron, optical and electrical properties of hydrogenated amorphous Si~_xGex alloy thin films prepared by, 115, 253 plasmatron, for the production of high stability NiCr resistive films, 119, 211 rapid thermal annealing of co-sputtered Ta silicide films, 121, 43 reactive d.c. magnetron, optical and electrical properties of In203:Sn films prepared by, 121,109 reactive d.c., optical properties of thin films prepared by, 120, 81 reactive d.c. plasmatron, deposition of hard wear-resistant coatings by, 118, 255 reactive d.c., ofa Zn target, highly oriented ZnO

CUMULATIVE SUBJECT INDEX

films obtained by, 120, 55 reactive high rate d.c.: deposition rate, stochiometry and features of TiO x and TiN~ films with respect to the target mode in, 111,259 reactive high rate d.c., of oxides, 119, 203 reactive, influence of substrate shape on TiN films prepared by, I 11, 313 reactive, M6ssbauer effect studies of [(PbxSnl x ) l - r S b r ] O 2 thin films obtained by, 112, 237 reactive, preferential ionization in discharges for, 115, L45 reactive sputter deposition: a quantitative analysis, I18, 301 reactive, of thin Cu2S'films for application in solar cells, 112, 97 r.f. cathodic, study on the stoichiometry of polycrystalline thin films of G a A s deposited by, 120, 47 r.f. magnetron, morphological and compositional properties of MoSe~ films prepared by, 116, 367 r.f. magnetron, the stability of zinc oxide transparent electrodes fabricated by, 111, 167 r.f. reactive, effects of substrate temperature and substrate material on the structure of TiN films prepared by, 122, 115 r.f. reactive, TiN prepared by: characterization and adhesion to materials of technical interest, 122, 63 r.f., structural and optical properties of CdS thin films prepared by, 120, 31 r.f., temperature and bias effects on the electrical properties of CdS thin films prepared by, 114, 327 target to intermediate target, technique of, for the preparation of continuously composed alloys and for doping of a m o r p h o u s Si, 119, 103 very high rate reactive, Hf nitride coatings prepared by, 118, 279 Stability long-term, and resistance and temperature coefficient of resistance of annealed N i - C r - S i films, 116, 205 Steel(s) aluminide-coated, deformation and diffusion bonding of, 111, 37 composition and microstructure of arc-sprayed 1.3% Cr steel coatings, 118, 515 52100 bearing, application of ion implantation to improve the wear resistance of, 122, 279 microstructure and hardness of Ti(C,N) coatings on, prepared by the activated reactive evaporation technique, 118, 285

351 Stoichiometry and deposition rate and features of TiOx and TiN x films with respect to the target mode: reactive high rate d.c. sputtering, 111,259 non-, and electronic properties of GaAs(100) surfaces thermally cleaned in ultrahigh vacuum, 120, 133 of polycrystalline thin films of G a A s deposited by r.f. cathodic sputtering, study on the, 120, 47 Strain gauge coefficient for of thin metallic films, Fuchs Sondheimer expression for, 113, L19 gauges for, and power sensors, Seebeck and piezoresistance effects in a m o r p h o u s microcrystalline mixed-phase Si films and applications to, 112, 7 and linear kinetics in the oxidation of Si, 122, 191 Stress in chemically vapour-deposited Si films, 113, 271 deposition, effects of on the life of thermal barrier coatings on burner rigs, 119, 185 film, and kinetics of Pt silicide formation on Si, in situ study of, 113, 129 internal compressive, stress relief forms of diamond-like C thin films under, 112, 41 internal, gas adsorption on thin films of Cr studied by measurements of, 111,303 internal, and structure of evaporated Cr and M g F 2 films and their dependence on substrate temperature, ! 15, 185 intrinsic, in Cr thin films measured by a novel method, 112, 127 and microstructure in bias-sputtered ZrO 2 Y203 films, correlation between, 11"/, 201 modification of in cerous fluoride films through admixture with other fluoride compounds, 113, 287 Structure see also Microstructure(s) of a m o r p h o u s Si deposited in ultrahigh vacuum, the influence of on the solid phase epitaxial growth rate, 117, 101 changes in, and electrical changes in Ni Cr thin films, /n situ electron microscopy study of, 116, 229 changes in of thin fluorocarbon films deposited by glow discharge polymerization due to aging and temperature variation, 112, 61 columnar, of a m o r p h o u s Se films, the influence of doping on the, 116, 249 and composition of the CdSe-(oxidized Ti)

352

interface: an investigation of transmission electron microscopy and electron diffraction, 112, 349 and composition of electron-beam-evaporated Sn oxide films, the effects of annealing on, 122, 231 and composition of SnO~ films, effect of modification of, on the electron secondary emission, 116, 327 defect, in GaAs(001) films grown by molecular beam epitaxy, a reflection high energy electron diffraction examination of, 116, 165 and doping level, effects of on photoelectrochemical properties of thin films of polythiophene and derivatives. 122, 9 and electrical properties in disordered N i - C r films, 116, 287 and electrical properties of electrophoretically deposited layers of CdS, 121, 85 and electrical properties of In203:Sn films, thickness dependence of the, 117, 95 fine. of Si LVV and N KLL Auger signals for thermally nitrided SiO 2 films, 115, 135 of flash-evaporated Pb~_xHgxS alloy films, 111,249 and galvanomagnetic properties of thin Sb films. 111,235 grain boundary and void, of Ti films, the effect of oxygen on the, 116. 177 internal, and habit of multiply twinned Au particles on Ag bromide films, 116, 151 and internal stress of evaporated Cr and MgF 2 films and their dependence on substrate temperature, 115. 185 laser-induced transformations of in thin metal films. 116, 117 of monomer Langmuir Blodgett films, optical observation of, 116, 357 and morphology of ion-plated TiN, TiC and Ti(C,N) coatings, 118. 243 and optical properties of r.f.-sputtered CdS thin films, 120, 31 of oxide layers on real GaAs surfaces, investigation of using X-ray diffuse scattering, 121, 69 of PbS islands grown on single-crystal substrates, 116, 3 and physical properties o f l n Sn oxide thin films and their preparation parameters, correlations betweeen. !16. 202 and properties of dispersion-strengthened Cr MgO, C r - Y 2 0 3, Cr Y and Cr-Cu condensates, i11,285 properties of in magnetic garnet films, 114, 45 and properties, relationships between in Cr/Cu

THIN SOLID FILMS

and Ti/Ni microlaminate composites. 112, 227 of reactively sputtered TiN films, effects of substrate temperature and substrate material on the, 122, 115 of sputtered SnO2 films, change in during annealing, 116, 267 structural order in amorphous aluminas, 116, 289 transformations of in thin amorphous semiconductor films induced by electrical nanosecond switching, 112.75 of vacuum-deposited thick films of Ni Cr-AI, 120, 69 Substrates alkali halide, formation of polymer films on, 116. 164 Cu. improved adhesion between a sputtered alumina coating and, 114, 311 deformation of and thin film growth, 116, 77 the effect of mass balance and bonding to on segregation in thin films, 117, 71 GaAs. and Au thin films, interracial reactions between. 111,149 heating rates of for planar and cylindrical-post magnetron sputtering sources, 119. 87 influence of on the annealing behaviour of sputter-deposited N i - C r films, 121.61 influence of on the behaviour of sputterdeposited Ni Cr thin films, 116, 219 influence of shape of on TiN films prepared by reactive sputtering, 11 I, 313 influence of temperature of on the optical properties of evaporated Si films, 114, L35 metal-support interactions during the adsorption of CO on thin layers and islands of epitaxial Pd. 116, 23 oxidized Si(100), interaction of Au. Pd and A u - P d alloy deposits with, 120, 293 single-crystal, structure of PbS islands grown on, 116,3 softenable, subsurface particle monolayer and film formation in, techniques and thermodynamic criteria for, 111, 65 surfaces oL the influence of contamination of and charged point defects on nucleation. 116, 55 temperature oL internal stress and structure of evaporated Cr and MgF2 films and their dependence on, 115. 185 temperature and material of, effects of the on the structure of reactively sputtered TiN films. 122, 115 temperature and substrate dependence of the morphology of glow-discharge-deposited

CUMULATIVE SUBJECT INDEX

a-Si: H, 116,251 Sulphur amorphous GaS 3 A m thin films as inorganic photoresists. 120, 75 analysis of various growth procedures for the deposition of Bi2S 3 semiconducting films, 121,151 CdS solar cells: the formation of non-stoichiometric Cu(1) sulphide by the ion exchange process, 111, 121 CdS thin film transistor with Pr6011 as the gate oxide, 112, L5 characterization of SnS 2 films formed from the vapour phase in a closed tube, 121,227 chemisorption of molecular sulphur (Sz) on Ni(001), 111,129 the deep level transient spectroscopy measurement of S*-implanted InP annealed with a continuous wave laser, 116, 233 dry etching of gratings on spin-coated As2S 3 films, 116, L53 electrical and thermoelectric properties of Sb2S 3 thin films prepared by the dip-dry method, 122, 93 frictional and morphological properties of Au-MoS~ films sputtered from a compact target, 118, 375 growth and electrical properties of AgGaSz thin films, 111, 17 hot-wall epitaxy of CdS thin films and their photoluminescence, 121, 75 magnetic coupling phenomena in EuS/Pb thin film double layers, 117, 9 physical properties and photoinduced changes in amorphous Ge S films, 117, 251 physical properties of thin film CuzS / Zn~Cdl xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction, 121, 1 preparation and electrical properties of InSb thin films heavily doped with Te, Se and S, 111,351 preparation and optical properties of LiInS2 thin films, 111,331 the properties of electrophoretically deposited layers of CdS, 121, 85 reactive sputtering of thin CuzS films for application in solar cells, 112, 97 source-drain characteristics and field effect studies of CdS thin film field effect transistor structures, 116, 232 structural and optical properties of r.f.sputtered CdS thin films, 120, 31 structure of flash-evaporated Pb i - xHgx S alloy films, 111,249

353 structure of PbS islands grown on single-crystal substrates, 116, 3 Te/CdS thin film diodes, 113, 189 temperature and bias effects on the electrical properties of CdS thin films prepared by r.f. sputtering, 114, 327 thin film CdS electrolyte cells. 117, 233 X-ray and electron microscopy studies of singlelayer TaS2 and NbS 2, 113, 165 Superconducting films of Nb3Ge, the film growth process in the bias sputtering of, 115, 315 Surface films on Si, th~effect of deposition mechanism on the composition of, 112, 329 Si thin, volume changes of during high dose oxygen implantation. 111, 59 Surface photovoltage investigations using of the electronic properties of Si(l 11) surfaces annealed in high vacuum, ! 15, 27 Surface photovoltage spectroscopy investigation using of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently co+ered with oxygen, 112, 309 Surfaces of diffusion aIuminide coatings, morphology of, 119, 291 GaAs(100), surface photovoltage spectroscopy investigation of the electronic properties of thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen, 112, 309 GaAs(100), thermally cleaned in ultrahigh vacuum, non-stoichiometry and electronic properties of, 120, 133 GaAs substrate, heating effects on during the mounting process in the molecular beam epitaxy technique, 122, L97 laser processing of, the effects of on the thermally grown oxide scale formed on an N i - C r - A I - Y composition, 119, 327 microstructure of C u - Z r phases formed by laser treatment of, III, 43 modification of by electron beams, 118, 85 M o ( l l 0 ) and W(ll0), a comparison of the initial growth of metal layers on, 121,159 real GaAs, investigation of the structure of oxide layers on using X-ray diffuse scattering, 121, 69 Si(lll), annealed in high vacuum, surface photovoltage investigations of the electronic properties of, 115, 27 Si, texturing of by dynamic recoil mixing, 117,

354 223 of Sn oxide, hydrogen plasma interactions with, 117, 149 of the S-I Spheromak flux core liner, preparation of, 118, 15 stable crystalline, preparation of for subsequent fundamental reaction studies, 1lfi, 155 substrate, contamination of and charged point defects, the influence of on nucleation, 116, 55 subsurface particle monolayer and film formation in softenable substrates: techniques and thermodynamic criteria. 111, 65 and thin films, quantification of H in using a non-destructive forward-scattering technique, 119, 429 TiO 2(001), characterization of monolayers of Pt and Fe on by Auger electron spectroscopy, secondary eleclron emission and work function changes, 121,247 Switching electrical nanosecond, structural transformations in thin amorphous semiconductor films induced by, 112, 75 mechanism of in ZnTe films, 113, 185 memory, effects of in locally grown polycrystalline Si films, 112, 121

T Tantalum a comparison between electron energy loss spectroscopy and Auger electron spectroscopy sputtering depth profiles of Ta2Os/'Ta~ 120, 185 rapid thermal annealing of co-sputtered Ta silicide films, 121, 43 a TaSi~, barrier for low resistivity and high reliability of contacts to shallow diffusion regions in Si, 120, 257 X-ray and electron microscopy studies of singlelayer TaS2 and NbS2, 113, 165 Tellurium anomalous temperature dependence of the resistivity in PbTe thin films, i 16, 20 I on the formation of Te compounds in binary thin film metal/Te systems, 115, L49 growth and electrical transport properties of CuInTe2 thin films, 112, 107 investigations of the initial stage of the epitaxial growth of CdTe layers, 116, 137 misfit dislocation behaviour in epitaxially grown PbTe.,Sel_x/PbTe heterojunctions. 115, 141 optical properties of vacuum-evaporated CdTe thin films, 120, 23 preparation and electrical properties of InSb

THIN SOLID FILMS

thin films heavily doped with Te, Se and S, 111,351 preparation and properties of epitaxial films of In-doped Pb Sn telluride, 122, 217 preparation and X-ray diffraction studies of compositionally modulated PbTe/Bi films, 111,323 properties of CdTe films grown on inSb by molecular beam epitaxy, 1 lfi, 97 room temperature diffusion and Ag2Te compound formation in Ag/Te thin film diffusion couples, !16. 163 a secondary ion mass spectrometry study of two-layer systems based on Te, 112, 81 space-charge-limited current measurement of traps in p-type electrochemically deposited CdTe thin films, 112, 301 stimulated crystallization of polycrystalline ZnTe films, 122, 297 switching mechanism in ZnTe films, 113, 185 Te/CdS thin film diodes, 113, 189 thin film AI/AIzOs/Te metal/insulator/semiconductor capacitors, 112. 1 an X-ray Fourier line shape analysis of hexagonal Te films vacuum evaporated at low temperature (133 K), 122, 73 Temperature coefficient(s) of resistance low, electroless thin film Ni-P resistors with, 112, L9 and resistance and long-term stability of annealed thin N i - C r Si films, 116, 205 Tetracene injection photoconductivity and photovoltagc in metal/tetracene/metal sandwich systems, 121,175 Tet racyanoq uinodimethane relations between the morphology and conductivity of thin films of tetrathiofulvalinium tetracyanoquinodimethanc, 111, 7 Tetrathiofulvalinium relations between the morphology and conductivity of thin films of tetrathiofulvalinium-tetracyanoquinodimethane, I 11, 7 Texturing surface, of Si by dynamic recoil mixing, ! 17,223 Thermal barrier coatings on burner rigs, deposition stress effects on the life of, 119, 185 for jet engine improvement, 119, 301 performance of in high heat flux environments, 119, 195 plasma-sprayed, failure analysis of, 119, 173 plasma-sprayed zirconia-yttria, neutron and X-ray diffraction of, 119, 159 Thermal conductivity

CUMULATIVE SUBJECT INDEX

of plasma-sprayed ceramic coatings, a model for, 112, 89 Thermal cycling hysteresis in resistance variation in ultrathin Cr films in different heating cooling cycles, 116, 204 Thermal effects and bias effects on the electrical properties of CdS thin films prepared by r.f. sputtering, ! 14, 327 in Cu films, an optical study of. 112, 7t effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films, 122; 115 on GaAs substrate surfaces during the mounting process in the molecular beam epitaxy technique, 122, L97 in ionization-assisted processes, I 17, 261 thermal gain of multilayer stacks, 120, 7 Thermal properties anomalous temperature dependence of the resistivity in PbTe thin films, 116, 201 elasticity modulus Ef and temperature expansion coefficient ~¢ of Al thin films measured by a new method, 112, 219 and mechanical properties of optical materials in thin film form, the influence of on their damage resistance to pulsed lasers, i 18, 49 and substrate dependence of the morphology of glow-discharge-deposited a-Si: H. 116, 251 Thermal treatment effect of on the thermoelectric power of Bi thin films, 116, 230 Thermodynamics subsurface particle monolayer and film formation in softenable substrates: techniques and criteria of, 111, 65 Thermoelectric power of Bi thin films, effect of heat treatment on the, 116, 230 Thermoelectric properties and electrical properties of Sb2S 3 thin films prepared by the dip dry method, 122, 93 Thick films RuOz-based resistive, on the segregation of the conductive phase in, 121,263 vacuum-deposited, of Ni-Cr-AI, structure of. 120, 69 Thickness dependence on of the electrical and structural properties of ln203:Sn films. 1 I% 95 and dielectric function of thin films, unambiguous determination of by spectroscopic ellipsometry, 113, 101 non-uniform, correction method for determin-

355 ing the optical constants of thin films with, 116, 235 of vacuum-deposited amorphous Sb films, dependence of the crystallization rate on, 116, 373 Thin films correlations of electrical conductivity with point defect clusters in, 116, 115 determination of free-electron parameters of, 112, 175 electromigration defect formation in, 116, 97 grain boundary structure of, 116, 111 growth of under equilibrium and non-equilibrium conditions, 116, 96 hardness measurements of, 114, 257 of metals, Fuchs-Sondheimer expression for the strain gauge coefficient of. 113, L19 of metals, reaction between permalloy and, 122, 173 of metals, transport properties of, 122, 105 with non-uniform thickness, correction method for determining the optical constants of, 116, 235 produced by molecular beam epitaxy, growth kinetics and perfection of, 116, 95 segregation in, the effect on of mass balance and bonding to the support, 117, 71 a study of the influence of the deposition parameters on the defect density of, 116, 114 substrate deformation and growth of, 116, 77 supported, on the determination of the optical constants nO,) and :~0-)of, 122, 45 and surfaces, quantification of H in using a nondestructive forward-scattering technique, 119, 429 of tetrahedral amorphous materials, defect structures in, 116, 41 Thinning oxygenated Ar beam, erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on Mo during, 117, 191 II1-V compounds on the problem of elemental Bv material in the interface of native oxide/AraB v structures, i13, 157 III-V structures grown by molecular beam epitaxy for high speed devices, 118, 117 Tin change in the structure of sputtered SnO2 films during annealing, 116, 267 characterization of SnS 2 films formed from the vapour phase in a closed tube, 121,227 chemical reaction and interdiffusion at ZnSe (In Sn oxide) interfaces, 121, 51

356 correlation between the structural and physical properties of In Sn oxide thin films and their preparation parameters, 116, 202 deposition of transparent conducting in Sn oxide thin films by reactive ion plating, 115, 195 development of InP-based solar cells with In-Sn oxide films prepared by reactive d.c. sputtering, !19, 1 the effect of annealing on the optical properties o f l n Sn oxide films, 122, 19 effect of composition and structure modification of SnO x films on the electron secondary emission, 116, 327 the effects of annealing on the structure and composition of electron-beam-evaporated Sn oxide films, 122, 231 electrical and optical properties of thin In203:Sn and SnO2:Sb-In203:Sn films obtained by the hydrolysis method, 112, 313 hydrogen plasma interactions with Sn oxide surfaces, 117, 149 influence of annealing on the phase composition, transmission and resistivity of SnOx thin films, 113, 215 M6ssbauer effect studies of [(PbxSn 1 xh-ySby]O2 thin films obtained by reactive sputtering, 112, 237 optical and electrical properties of reactively d.c. magnetron-sputtered In203:Sn films, 121,109 preparation and properties of epitaxial films of In-doped Pb Sn telluride, 122, 217 properties of SnO2:F films prepared on glass substrates by the spraying method, 113, 93 properties of thin In20 3 and SnO 2 films prepared by corona spray pyrolysis, and a discussion.of the spray pyrolysis process, 120, 275 some reflection high energy electron diffraction and depth-selective M6ssbauer spectroscopy investigations on the structures in evaporated thin Sn films before and after their heating in vacuum, 113, 297 Sn dioxide with the CaF 2 structure in thin tin oxide films, 112, 247 SnO films and their oxidation to SnO z, Raman scattering, IR reflectivity and X-ray diffraction studies of, 121,217 studies of the Hall effect in thin SnO2:Sb and In203:Sn films obtained by the hydrolysis method, 117, 157 study of the phase transition in heteroepitaxially grown films of ~x-Sn by Raman spectroscopy, 111,375

THIN SOLID FILMS

thickness dependence of the electrical and structural properties of InzO3:Sn films, 117, 95 TiO2/(indium tin oxide) multilayer film: a transparent IR reflector, 116, L55 Titanium comparison of the properties of ion-plated Ti carbide films prepared by different activation methods, 120, 283 the effect of oxygen on the grain boundary and void structure of Ti films, 116, 177 effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films, 122, 115 electrical resistivity of very thin single-crystal Ti films as a function of temperature, 117. l incoherent radiative processing of Ti silicides, 118, 155 influence of the nitrogen partial pressure on the properties of d.c.-sputtered Ti and titanium nitride films, 111,339 influence of oxygen on the behaviour of diodes fabricated from sputtered TiO2 films on Au, 115, 229 influence of substrate shape on TiN films prepared by reactive sputtering, 111.313 the interpretation of weak inhomogeneities in TiO z layers, 116, 234 mechanisms of the biased sputtering of Ti in an Ar N 2 mixture, 120, 223 microstructure and hardness of Ti(C,N) coatings on steel prepared by the activated reactive evaporation technique, 118, 285 microstructure and mechanical properties of TiC-AI20 3 coatings, 118, 293 monolayers of Pt and Fe on TiOz(001), and their characterization by Auger electron spectroscopy, secondary electron emission and work function changes, 121,247 morphology and structure of ion-plated TiN, TiC and Ti(C,N) coatings, 118, 243 oxidation behaviour of double layers of TiSi2 on:polycrystalline St, 116, 383 photoelectrochemical properties of plasmadeposited TiO 2 thin films, 115, 13 plasma spray synthesis of TiB 2 Fe coatings, 118, 477 preparation and characterization of C and Ti carbide coatings, 121, 35 preparation and characterization of TiC-coated Mo wall for the JT-60 reactor, 118, 5 reactive high rate d.c. sputtering: deposition rate, stoichiometry and features of TiO x and TiNx films with respect to the target mode, 111,259 r.f. reactively sputtered TiN: characterization

357

CUMULATIVE SUBJECT INDEX

and adhesion to materials of technical interest, 122, 63 stable ohmic contact to GaAs with TiN diffusion barrier, 119, 5 the structure and composition of the CdSe (oxidized Ti) interface: an investigation by transmission electron microscopy and electron diffraction, 112, 349 structure-property relationships in Cr/Cu and Ti/Ni microlaminate composites, 112, 227 TiBz-coated cathodes for AI smelting cells, 119, 241 TiN as a high temperature diffusion barrier for As and B, 119, 11 TiO2/(indium tin oxide) multilayer film: a transparent IR reflector, 116, L55 Transistors CdS thin film field effect, source-drain characteristics and field effect studies of, i16, 232 CdS thin film, with Pr6Oll as the gate oxide, 112, L5 Transition metals heterogeneous growth in transition metal-rare earth films during bias sputter deposition, 118, 93 Transmission electron microscopy and electron diffraction, an investigation by of the structure and composition of the CdSe (oxidized Ti) interface, 112,349 in situ crystallization of amorphous Ge under laser irradiation monitored by, 111, 141 and X-ray photoelectron spectroscopy, investigations of the Mo-CuInSe 2 interface by, 116, L59 Transparent films B C - N H thin, formed by plasma chemical vapour deposition, 117, 311 thin, of BaFCl:Eu X-ray phosphor, the preparation of, 115, 89 thin conducting, of In Sn oxide, deposition of by reactive ion plating, 115, 195 Transport particle, Monte Carlo simulation of the process of in sputter deposition, i12, 161 properties of in thin metal films, 122, 105 Traps in p-type electrochemically deposited CdTe thin films, space-charge-limited current measurement of, i12, 301 Tribological characteristics of thin films and applications of thin film technology for friction and wear reduction, 118, 335 Tungsten chemical vapour deposition of W films for

metallization of integrated circuits, 122,243 a comparison of the initial growth of metal layers on Mo(110) and W(110) surfaces, 121, 159 reactive etching mechanism of W silicide in CF4-O 2 plasma, 118, 149 solid state electrochromic cells: optical properties of the Na W bronze system, 113, L29 Tunnelling conductance changes in inelastic electron tunnelling junctions during infusion doping, 112, 193 Twinning habit and internal structure of multiply twinned Au particles on Ag bromide films, 116, 151

U Ultrafine-grained materials and conventional materials, erosion of, 118, 32 l Ultrasonics the effect of vibration using on hard Cr plating in a modified self-regulating high speed bath, 120, 153 Ultrathin films of Cr, hysteresis in variation in resistance of in different heating-cooling cycles, 116, 204 Urbach tails and optical gaps of amorphous hydrogenated Si films prepared by chemical vapour deposition, B doping and post-hydrogenation effects on, 115, 263

V Vacuum selection and qualification of materials for relative motion and electrical isolation in, 119, 113 vacuum design of vacuum web coaters, 119, 217 Vanadium electrical properties of V films as a function of the annealing temperature, 116, 231 phase formation and diffusion in V/AI thin film couples prepared under varying deposition conditions, 114, 271 thickness-dependent conductivity of nearstoichiometric V20 5 films deposited from gels, 121, 29 Vibration ultrasonic, the effect of on hard Cr plating in a modified self-regulating high speed bath, 120, 153 Vinyl monomers water-soluble, plasma-initiated graft polymerization of onto hydrophobic films and its application to metal absorbing films, 118, 197

358

THIN SOLID FILMS

W Wear deposition of hard wear-resistant coatings by reactive d.c. plasmatron sputtering, 118, 255 and friction, tribological characteristics of thin films and applications of thin film technology for reduction of, 118, 335 improved resistance of Zr to by enhanced oxide films, 118, 351 investigations on mechanical behaviour of brittle coatings resistant to: theory, 111, 201 plasma-sprayed wear-resistant ceramic and cermet coating materials, 118, 485 resistance to, of 52100 bearing steel, application of ion implantation to improve the, 122,279 Work function changes in, and Auger electron spectroscopy and secondary electron emission, characterization by of monolayers of Pt and Fe on TiO2(001 ), 121,247

X X-ray diffraction and electron diffraction of polycrystalline Si films, additional peaks in the, 113, 59 method for quantitative analysis using of singlephase sandwich-like crystalline films with a slightly varying lattice parameter, 111,269 and neutron diffraction of plasma-sprayed zirconia yttria thermal barrier coatings, 119, 159 and preparation of compositionally modulated PbTe/Bi films, 111,323 and Raman scattering and IR reflectivity, studies by of SnO films and their oxidation to SnOz, 121,217 X-ray photoelectron spectroscopy study by, of C1 incorporation in thermally grown HC1 oxides on Si, 114, 285 study by of the diffusion of Fe, Ni and Co through Au films, 114, 349 and transmission electron microscopy, investigations of the Mo-CuInSe 2 interface by, 116, L59 X-rays the preparation of thin film transparent BaFCI: Eu X-ray phosphor, 115, 89 X-ray studies and electron microscopy studies of single-layer TaS 2 and NbS2, 113, 165 using Fourier line shape analysis of hexagonal Te films vacuum evaporated at low temperature (133 K), 122, 73 and reflection high energy electron diffraction of AIN films grown on Si(l 11) and Si(001) by

organometallic chemical vapour deposition, 122, 259

Y Ytterbium dielectric behaviour of Yb20 3 thin film capacitors, 120, 171 Yttrium correlation between the stress and microstructure in bias-sputtered ZrO2-Y203 films, 117, 201 the effect of ion-implanted Si on the 1050 C oxidation behaviour of Co-Cr-A1 and Co Cr A1-Y compositions, 113, 27 the effects of laser surface processing on the thermally grown oxide scale formed on an N i - C r AI-Y composition, 119, 327 neutron and X-ray diffraction of plasmasprayed zirconia-yttria thermal barrier coatings, 119, 159 structure and properties of dispersion-strengthened C r - M g O , Cr Y203, Cr-Y and Cr Cu condensates, 111,285

Z Zinc adsorption, desorption and conductivity of sputtered Zn oxide thin films, 121, 95 annealing studies of undoped and In-doped films of Zn oxide, 122, 31 anomalous thermal desorption from polycrystalline Zn oxide films, 121, L85 chemical reaction and interdiffusion at ZnSe(In Sn oxide) interfaces, 121, 51 conduction mechanism in sputtered polycrystalline Zn oxide thin films, 117, 19 highly oriented ZnO films obtained by d.c. reactive sputtering o f a Zn target, 120, 55 optimization and evaluation of black Zn selective solar absorber surfaces, 115, 51 optimization and microstructural analysis of black-Zn-coated A1 solar collector coatings, 113, 47 physical properties of thin film CuzS / ZnxCd~ xS heterojunction solar cells fabricated by aqueous treatment and solid state reaction, 121, 1 refractive index of thin films of ZnSe in the IR, 112, L1 the stability of zinc oxide transparent electrodes fabricated by r.f. magnetron sputtering, 111, 167 stimulated crystallization of polycrystalline ZnTe films, 122, 297 switching mechanism in ZnTe films, I ! 3, 185

CUMULATIVE SUBJECT INDEX

Zirconium correlation between the stress and microstructure in bias-sputtered Z r O 2 - Y 2 0 3 films, 117, 201 improved wear resistance of Zr by enhanced oxide films, 118, 351 long-term exposure of plasma-sprayed ZrO z in high temperature reactor helium, 119, 317

359 microstructures of Cu Zr phases formed by laser surface treatment, 11 I, 43 neutron and X-ray diffraction of plasmasprayed zirconia yttria thermal barrier coatings, 119, 159 resistivity, oxidation kinetics and diffusion barrier properties of thin film ZrB2, 119, 23