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Designing a custom VLSI moment invariant data signal processor
World Abstracts on Microelectronics and Reliability are relatively easy to do in most practical cases, where d.c. losses are dominant.
A color vision inspection system for integrated circuit manufacturing. MATTHEWBARTH et al. IEEE Transactions on Semiconductor Manufacturing, 5(4), 290 (1992). The industrial tendency to increase complexity and density of VLSI circuits has necessitated accurate, reliable inspection of an IC wafer throughout its entire process lifetime. When inspecting inprocess and in situ, a larger number of defects are more readily detected. In particular, thin films which make up part of the IC structure and are present after several processing steps exhibit certain characteristic colors when illuminated with white light. Exploiting this color phenomenon, we introduce an inspection system which can measure critical film thicknesses, segment IC images, and detect an entire class of color defects that would be difficult or impossible to detect with typical grayscale imaging. We carry out this inspection on a unique multi-window parallel hardware architecture which allows the inspection process to be performed at high speeds. Based on image understanding techniques, the inspection is carried out in a two-stage fashion where defects are first rapidly hypothesized and then verified in detail only within the salient regions of an image, thus eliminating a large amount of irrelevant data. The system has been tested on numerous IC images and shows promising results.
Device interconnection technology for advanced thermal conduction modules. SUDIPTA K. RAY et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 432 (1992). Area array solder bumps on silicon devices known as controlled collapse chip connection (C4) balls have been successfully used in terminating logic and memory devices to ceramic substrates in numerous IBM products over the last two decades. With the recent announcement of the IBM System 390/ES 9000 series of mainframe computers, this highly reliable chip termination technology has been extended to a new height of both interconnection density and total number of chip I/O connections per module. In addition, in the models 820 and 900 of the ES 9000 series, a totally new materials set, namely glassceramic with copper internal metallization along with thin film redistribution wiring on the top surface, has been introduced for multilayered ceramic substrates. In this paper, key elements of advanced glass-ceramic substrate technology relevant to flipchip joining are reviewed. This is followed by a discussion of device join and replace processes used in advanced thermal conduction modules (ATCMs). These modules also have decoupling capacitors which are attached by C4 solder reflow. Optimization of the top surface metallurgy and device join parameters necessary to achieve reliable joining of more than 70,000 solder balls per module is discussed.
6. M I C R O E L E C T R O N I C S - - - C O M P O N E N T S ,
Makers develop dense chip mounting for IC memory cards. KoJI SAKUTA. JEE (Japan), 78 (November 1992). IC cards find extensive use in office, factory and service automation equipment. Applications for these products are expanding in many areas, because they constitute a portable memory medium. Makers offer diverse kinds of IC cards with different memory capacities. Large-capacity versions are in demand for medical equipment and vehicle-installed systems. To devise large-capacity memory cards, it is necessary to install memory ICs densely on printed circuit boards. Makers are finding new technologies to achieve this goal. Bipolar VLSl--an application for a high-performance microcontroller. P. L. JONES and P. DAY. Microelectronics Journal, 23, 555 (1992). This paper looks at the special merits of bipolar differential logic for high performance VLSI. A design route is developed using a high level hardware description language leading to a semicustom style of automatic layout. Preliminary assessment from simulation suggests that 100 MHz operation of an eight-bit high-functionality microcontroller can be achieved using this approach.
2071
SYSTEMS AND EQUIPMENT
Designing a custom VLSI moment invariant data signal processor. G. A. ARMSTRONG and M. L. SIMPSON. Computers and Electronic Engineering, 19(1), 25 (1993). This paper describes the design of a very large scale integration (VLSI) applicationspecific integrated circuit (ASIC) for use in pattern recognition. The ASIC implements a moment invariant engine for use in real-time pattern recognition. The pattern recognition scheme uses Hu and Maitra's algorithms for moment invariants. A prototype design was generated that resolved the long delay time of the multiplier by custom designing adder cells based on the Manchester carry chain, which effectively incorporated the carry lookahead (CLA) function into the adder cells. The prototype ASIC was fabricated in a 2.0/~m CMOS technology (simulated at 20MHz) and was tested with 100% success to 16.67 MHz. The prototype consisted of a 4 × 8 multiplier and an I l-bit accumulator stage. The present ASIC design consists of a 9 × 26 multiplier (that has a maximum propagation time of 50 ns) and a 48-bit accumulator stage. The final ASICs will be used in parallel at the board level to achieve the 232.5 megaoperations/s [1024 × 1024 operations/s = 1 mega-
2072
World Abstracts on Microelectronics and Reliability
operations/s (MOPs)] necessary to perform the moment invariant algorithms in real time on 512 x 512 pixel images with 256 gray scales.
nology, code-named ATX-4, is composed of trenchisolated, double-polysilicon self-aligned bipolar devices, and has four fully planarized wiring levels with interlevel connecting studs. Chip fabrication has been implemented in l-/lm ground rules and is in full-scale manufacturing. ATX-4 represents a significant advance in providing higher-speed and lowerpower logic at increased levels of integration compared with that of the ATX-1 technology used in previous generations. An overview of the design and integration of ATX-4 is discussed.
Time-domain characterization of interconnect discontinuities in high-speed circuits. JYH-MING JONG et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 497 (1992). Experimental techniques to characterize typical interconnect discontinuities such as bends and steps, based on time-domain reflection (TDR) measurements, are formulated in this paper. These interconnect discontinuities are characterized in terms of general lumped/ distributed circuit models which are compatible with CAD simulation tools such as SPICE. The results for the model element values are shown to be consistent with frequency-domain lumped equivalent models for microstrips derived from S-parameter measurements and electromagnetic computations based on the excess inductance and capacitance concepts. The models are also validated by simulating their step response on SPICE and comparing them with the TDR data. Advancing the state of the art in high-pedormauce logic and array technology. K. H. BROWN, D. A. GROSE, R. C. LANGE, T. H. NING and P. A. TOTTA. IBM Journal of Research and Development, 36(5), 821 (1992). High-speed silicon bipolar technology continues to meet the demands of integrated circuits for mainframe computers. IBM has developed an advanced bipolar logic and high-speed array technology for its Enterprise System/9000 tm systems. This tech-
7. S E M I C O N D U C T O R
INTEGRATED
On the common-emitter breakdown voltage of bipolar junction transistors. SHENG-LYANGJANG. Solid-State Electronics, 36(2), 213 (1993). In bipolar junction transistors, it was believed that the common emitter breakdown voltage can be derived from the equation ~F M = 1, where M is the collector-base multiplication factor, and ccF is the static gain factor. When this condition holds, the collector current rises steeply and it is limited by the external resistance and the capability of the power supply or the device is destroyed. However, the common-emitter currentvoltage characteristics with the base open can also be derived from ccF M = 1. In the common-emitter configuration with the base open, the I - V output characteristics show that the collector current is finite. In this paper we resolve the conflict of using ceF M = 1 and derive the output characteristics and the breakdown condition on a rigorous physical basis. A simple microwave method for monitoring the conductivity of semiconductor epitaxial layers. B. R. NAG, G.
Ultra-dense: an MCM-based three-dimensional digital signal processor. JOHN M. SEGELKEN et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 438 (1992). The DSP3 Multiprocessor Project at AT&T Bell Laboratories, sponsored by the Defense Advanced Research Projects Agency (DARPA), has produced a multiG F L O P (10 9 FLoating Point OPerations per second) machine that is applicable to a variety of signal processing and pattern recognition problems. A companion DARPA sponsored program, the Ultra-Dense Project, is utilizing silicon-on-silicon multichip module (MCM) technology and innovative advanced packing and physical design to achieve a parallel three-dimensional digital signal processor based on the DSP3. This paper presents an overview and outlines systems architecture, Micro-Interconnect Technology (Si-on-Si MCM), and unique innovative advances in physical design and packaging technology leading to an Ultra-Dense project demonstration.
CIRCUITS, DEVICES AND MATERIALS GHOSH and S. DHAR. Solid-State Electronics, 35(12), 1823 (1992). A simple microwave method is described for monitoring the conductivity of epitaxial layers grown on insulating or conducting substrates. Experimental results are given to illustrate the suitability of the method.
Analysis of microwave scattering from semiconductor wafers. T. OTAREDIAN. Solid-State Electronics, 36(2), 163 (1993). The reflection and transmission coefficients have been calculated for one-dimensional wave propagation for various configurations in order to use the result for the contactless microwave lifetime measurement technique. Analytical approximations for low and high frequencies have been obtained and it has been shown that the reflection coefficient for nonhomogeneous conductivity can be approximated for relatively high frequencies by using the expression for the homogeneous sample and taking the average conductivity. The sensitivity of the microwave lifetime measurement has been calculated
A color vision inspection system for integrated circuit manufacturing. MATTHEWBARTH et al. IEEE Transactions on Semiconductor Manufacturing, 5(4), 290 (1992). The industrial tendency to increase complexity and density of VLSI circuits has necessitated accurate, reliable inspection of an IC wafer throughout its entire process lifetime. When inspecting inprocess and in situ, a larger number of defects are more readily detected. In particular, thin films which make up part of the IC structure and are present after several processing steps exhibit certain characteristic colors when illuminated with white light. Exploiting this color phenomenon, we introduce an inspection system which can measure critical film thicknesses, segment IC images, and detect an entire class of color defects that would be difficult or impossible to detect with typical grayscale imaging. We carry out this inspection on a unique multi-window parallel hardware architecture which allows the inspection process to be performed at high speeds. Based on image understanding techniques, the inspection is carried out in a two-stage fashion where defects are first rapidly hypothesized and then verified in detail only within the salient regions of an image, thus eliminating a large amount of irrelevant data. The system has been tested on numerous IC images and shows promising results.
Device interconnection technology for advanced thermal conduction modules. SUDIPTA K. RAY et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 432 (1992). Area array solder bumps on silicon devices known as controlled collapse chip connection (C4) balls have been successfully used in terminating logic and memory devices to ceramic substrates in numerous IBM products over the last two decades. With the recent announcement of the IBM System 390/ES 9000 series of mainframe computers, this highly reliable chip termination technology has been extended to a new height of both interconnection density and total number of chip I/O connections per module. In addition, in the models 820 and 900 of the ES 9000 series, a totally new materials set, namely glassceramic with copper internal metallization along with thin film redistribution wiring on the top surface, has been introduced for multilayered ceramic substrates. In this paper, key elements of advanced glass-ceramic substrate technology relevant to flipchip joining are reviewed. This is followed by a discussion of device join and replace processes used in advanced thermal conduction modules (ATCMs). These modules also have decoupling capacitors which are attached by C4 solder reflow. Optimization of the top surface metallurgy and device join parameters necessary to achieve reliable joining of more than 70,000 solder balls per module is discussed.
6. M I C R O E L E C T R O N I C S - - - C O M P O N E N T S ,
Makers develop dense chip mounting for IC memory cards. KoJI SAKUTA. JEE (Japan), 78 (November 1992). IC cards find extensive use in office, factory and service automation equipment. Applications for these products are expanding in many areas, because they constitute a portable memory medium. Makers offer diverse kinds of IC cards with different memory capacities. Large-capacity versions are in demand for medical equipment and vehicle-installed systems. To devise large-capacity memory cards, it is necessary to install memory ICs densely on printed circuit boards. Makers are finding new technologies to achieve this goal. Bipolar VLSl--an application for a high-performance microcontroller. P. L. JONES and P. DAY. Microelectronics Journal, 23, 555 (1992). This paper looks at the special merits of bipolar differential logic for high performance VLSI. A design route is developed using a high level hardware description language leading to a semicustom style of automatic layout. Preliminary assessment from simulation suggests that 100 MHz operation of an eight-bit high-functionality microcontroller can be achieved using this approach.
2071
SYSTEMS AND EQUIPMENT
Designing a custom VLSI moment invariant data signal processor. G. A. ARMSTRONG and M. L. SIMPSON. Computers and Electronic Engineering, 19(1), 25 (1993). This paper describes the design of a very large scale integration (VLSI) applicationspecific integrated circuit (ASIC) for use in pattern recognition. The ASIC implements a moment invariant engine for use in real-time pattern recognition. The pattern recognition scheme uses Hu and Maitra's algorithms for moment invariants. A prototype design was generated that resolved the long delay time of the multiplier by custom designing adder cells based on the Manchester carry chain, which effectively incorporated the carry lookahead (CLA) function into the adder cells. The prototype ASIC was fabricated in a 2.0/~m CMOS technology (simulated at 20MHz) and was tested with 100% success to 16.67 MHz. The prototype consisted of a 4 × 8 multiplier and an I l-bit accumulator stage. The present ASIC design consists of a 9 × 26 multiplier (that has a maximum propagation time of 50 ns) and a 48-bit accumulator stage. The final ASICs will be used in parallel at the board level to achieve the 232.5 megaoperations/s [1024 × 1024 operations/s = 1 mega-
2072
World Abstracts on Microelectronics and Reliability
operations/s (MOPs)] necessary to perform the moment invariant algorithms in real time on 512 x 512 pixel images with 256 gray scales.
nology, code-named ATX-4, is composed of trenchisolated, double-polysilicon self-aligned bipolar devices, and has four fully planarized wiring levels with interlevel connecting studs. Chip fabrication has been implemented in l-/lm ground rules and is in full-scale manufacturing. ATX-4 represents a significant advance in providing higher-speed and lowerpower logic at increased levels of integration compared with that of the ATX-1 technology used in previous generations. An overview of the design and integration of ATX-4 is discussed.
Time-domain characterization of interconnect discontinuities in high-speed circuits. JYH-MING JONG et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 497 (1992). Experimental techniques to characterize typical interconnect discontinuities such as bends and steps, based on time-domain reflection (TDR) measurements, are formulated in this paper. These interconnect discontinuities are characterized in terms of general lumped/ distributed circuit models which are compatible with CAD simulation tools such as SPICE. The results for the model element values are shown to be consistent with frequency-domain lumped equivalent models for microstrips derived from S-parameter measurements and electromagnetic computations based on the excess inductance and capacitance concepts. The models are also validated by simulating their step response on SPICE and comparing them with the TDR data. Advancing the state of the art in high-pedormauce logic and array technology. K. H. BROWN, D. A. GROSE, R. C. LANGE, T. H. NING and P. A. TOTTA. IBM Journal of Research and Development, 36(5), 821 (1992). High-speed silicon bipolar technology continues to meet the demands of integrated circuits for mainframe computers. IBM has developed an advanced bipolar logic and high-speed array technology for its Enterprise System/9000 tm systems. This tech-
7. S E M I C O N D U C T O R
INTEGRATED
On the common-emitter breakdown voltage of bipolar junction transistors. SHENG-LYANGJANG. Solid-State Electronics, 36(2), 213 (1993). In bipolar junction transistors, it was believed that the common emitter breakdown voltage can be derived from the equation ~F M = 1, where M is the collector-base multiplication factor, and ccF is the static gain factor. When this condition holds, the collector current rises steeply and it is limited by the external resistance and the capability of the power supply or the device is destroyed. However, the common-emitter currentvoltage characteristics with the base open can also be derived from ccF M = 1. In the common-emitter configuration with the base open, the I - V output characteristics show that the collector current is finite. In this paper we resolve the conflict of using ceF M = 1 and derive the output characteristics and the breakdown condition on a rigorous physical basis. A simple microwave method for monitoring the conductivity of semiconductor epitaxial layers. B. R. NAG, G.
Ultra-dense: an MCM-based three-dimensional digital signal processor. JOHN M. SEGELKEN et al. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 15(4), 438 (1992). The DSP3 Multiprocessor Project at AT&T Bell Laboratories, sponsored by the Defense Advanced Research Projects Agency (DARPA), has produced a multiG F L O P (10 9 FLoating Point OPerations per second) machine that is applicable to a variety of signal processing and pattern recognition problems. A companion DARPA sponsored program, the Ultra-Dense Project, is utilizing silicon-on-silicon multichip module (MCM) technology and innovative advanced packing and physical design to achieve a parallel three-dimensional digital signal processor based on the DSP3. This paper presents an overview and outlines systems architecture, Micro-Interconnect Technology (Si-on-Si MCM), and unique innovative advances in physical design and packaging technology leading to an Ultra-Dense project demonstration.
CIRCUITS, DEVICES AND MATERIALS GHOSH and S. DHAR. Solid-State Electronics, 35(12), 1823 (1992). A simple microwave method is described for monitoring the conductivity of epitaxial layers grown on insulating or conducting substrates. Experimental results are given to illustrate the suitability of the method.
Analysis of microwave scattering from semiconductor wafers. T. OTAREDIAN. Solid-State Electronics, 36(2), 163 (1993). The reflection and transmission coefficients have been calculated for one-dimensional wave propagation for various configurations in order to use the result for the contactless microwave lifetime measurement technique. Analytical approximations for low and high frequencies have been obtained and it has been shown that the reflection coefficient for nonhomogeneous conductivity can be approximated for relatively high frequencies by using the expression for the homogeneous sample and taking the average conductivity. The sensitivity of the microwave lifetime measurement has been calculated