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Methodologies for full custom VLSI design
Computer power to the people: computer resource centres or home terminals? Two scenarios B H E D B E R G and M MEHLMANN Behav. lnL Technol. vol. 3, no. 3, pp. 235-248 (July, Sept. 1984) The coming of computer power as a public utility before 1990 is predicted and two scenarios are discussed, entailing respectively either the private use of computer utilities through home terminals or the collective use of local computer facilities in suburbs, town and villages. Headings in the article are as follows: Background and purpose; Previous research and experiments; The computer as isolator: at work, at home, at large; The computer as integrator: knitting work, family, school and society together; Two scenarios; some general assumptions; Computer resource centres - the collective approach registering information, finding information, remote jobs, local production, services, electronic mail, who works at the centre?, public access, equipment; Home terminals - the individual approach - remote jobs, receiving information, registering information, electronic mail, who works at home?, public access; The pros and cons - drives and obstacles; Computer power to the Swedes. But how?
It's still fast times for a hot industry E JULIUSSEN Mini-Micro Syst. vol. XVII, no. 7, pp. 167-175 (June 1984) The state-of-the-market for personal computers is examined. The equipment available for personal computers for home use, ie floppy discs, book size personal computers, battery powered hand-held PC's is reviewed. Data on the major personal computer suppliers in the US are given with special mention made of IBM, Apple Computer, Radio Shack, and Hewlett Packard. The growth of the hardware market in the US since 1982 is evaluated, with future trends postulated. The drive for standardisation of personal computers is also briefly discussed.
Transition to one micro technology: Part 2 PETER B U R G G R A F Semiconductorlnt. 136 (June 1984) Only those semiconductor manufacturers who aspire toward "world class" cleanliness and manufacturing productivity will avoid impending yield catastrophes.
Design system for semicustom VLSI circuits A D CLOSE, L FISHER, R M McDERMOTT, T A NIX, D M PERRINE and J M SCHOEN Electl. Commun. 58,372 (1984) The I T r semicustom design system enables complex VLSI circuits to be designed rapidly with a high expectation of correctness on the first pass. Planned improvements will make it possible to produce semicustom circuits that are as complex as today's full custom design circuits.
Improved planar isolation with buried-channel MOSFETs H SUNAMI, Y KAWAMOTO, K SHIMOHIGASHI and N HASHIMOTO Microelectron. Reliab. 24,555 (1984) A potential VLSI MOS device called BGP (buriedchannel) graded-drain with punchthrough stopper) with planar isolation is characterised in terms of fabrication techniques and its device performance. This planar isolation approach has been realised using highly directional dry etching and through-field-oxide implantation. It features simultaneous formation of punchthrough and parasitic channel stoppers and an effective channel width almost equivalent to nominal one. Fundamental device characteristics such as short-channel and narrowchannel effects are investigated. Good isolation performances are demonstrated in devices having 1 #m feature size at standard 5 V operation. Bipolar device packaging-electrical, thermal, and mechanical stress considerations L M MAHALINGHAM and D J REED SolidSt. TechnoL 167 (May 1984) As semiconductor devices become more complex and operate at higher speeds, packaging becomes more critical. High thermal performance, good electrical performance and low levels of mechanical stress are required in the package for the devices to operate as desired. In digital bipolar logic, perhaps the most demanding requirements are with ECL VLSI devices. While the demands are the greatest with ECL, the behaviour of other bipolar logic families may also be affected by packaging. Packaging is also critical in linear devices. Low cost 16 bit A/D and D/A converters will be difficult to achieve if stress is not managed. The special needs in the packaging of both IC and discrete bipolar devices are explored.
A comparison of MOS processes for VLSI Part I H E OLDHAM and S L PARTRIDGE SolidSt. Technol. 177 (June 1984) A comparison of semiconductor technologies for VLSI is presented with particular reference to the limitations imposed by fundamental technological and circuit design considerations. Unichannel MOS and CMOS in single crystal silicon or insulating substances are the primary subjects for discussion. From the viewpoint of fabrication technology there appears little to choose between PMOS, NMOS and CMOS approaches. However, CMOS processes are clearly emerging as being optimum for many types of circuit design. Further improvements are to be achieved by the utilisation of silicon-on-insulator CMOS and it is concluded that this technology will have an important place in the VLSI era. Methodologies for full custom VLSI design J DANNEELS and M MEINCK ElectL Commun. 58,389 (1984) As the complexity of integrated circuits continues to increase at a rapid pace, new design methodologies and tools are essential to ensure correct, cost-effective design. The goal is to be able to produce a correct chip design from the initial functional specification with minimal human interaction.
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It's still fast times for a hot industry E JULIUSSEN Mini-Micro Syst. vol. XVII, no. 7, pp. 167-175 (June 1984) The state-of-the-market for personal computers is examined. The equipment available for personal computers for home use, ie floppy discs, book size personal computers, battery powered hand-held PC's is reviewed. Data on the major personal computer suppliers in the US are given with special mention made of IBM, Apple Computer, Radio Shack, and Hewlett Packard. The growth of the hardware market in the US since 1982 is evaluated, with future trends postulated. The drive for standardisation of personal computers is also briefly discussed.
Transition to one micro technology: Part 2 PETER B U R G G R A F Semiconductorlnt. 136 (June 1984) Only those semiconductor manufacturers who aspire toward "world class" cleanliness and manufacturing productivity will avoid impending yield catastrophes.
Design system for semicustom VLSI circuits A D CLOSE, L FISHER, R M McDERMOTT, T A NIX, D M PERRINE and J M SCHOEN Electl. Commun. 58,372 (1984) The I T r semicustom design system enables complex VLSI circuits to be designed rapidly with a high expectation of correctness on the first pass. Planned improvements will make it possible to produce semicustom circuits that are as complex as today's full custom design circuits.
Improved planar isolation with buried-channel MOSFETs H SUNAMI, Y KAWAMOTO, K SHIMOHIGASHI and N HASHIMOTO Microelectron. Reliab. 24,555 (1984) A potential VLSI MOS device called BGP (buriedchannel) graded-drain with punchthrough stopper) with planar isolation is characterised in terms of fabrication techniques and its device performance. This planar isolation approach has been realised using highly directional dry etching and through-field-oxide implantation. It features simultaneous formation of punchthrough and parasitic channel stoppers and an effective channel width almost equivalent to nominal one. Fundamental device characteristics such as short-channel and narrowchannel effects are investigated. Good isolation performances are demonstrated in devices having 1 #m feature size at standard 5 V operation. Bipolar device packaging-electrical, thermal, and mechanical stress considerations L M MAHALINGHAM and D J REED SolidSt. TechnoL 167 (May 1984) As semiconductor devices become more complex and operate at higher speeds, packaging becomes more critical. High thermal performance, good electrical performance and low levels of mechanical stress are required in the package for the devices to operate as desired. In digital bipolar logic, perhaps the most demanding requirements are with ECL VLSI devices. While the demands are the greatest with ECL, the behaviour of other bipolar logic families may also be affected by packaging. Packaging is also critical in linear devices. Low cost 16 bit A/D and D/A converters will be difficult to achieve if stress is not managed. The special needs in the packaging of both IC and discrete bipolar devices are explored.
A comparison of MOS processes for VLSI Part I H E OLDHAM and S L PARTRIDGE SolidSt. Technol. 177 (June 1984) A comparison of semiconductor technologies for VLSI is presented with particular reference to the limitations imposed by fundamental technological and circuit design considerations. Unichannel MOS and CMOS in single crystal silicon or insulating substances are the primary subjects for discussion. From the viewpoint of fabrication technology there appears little to choose between PMOS, NMOS and CMOS approaches. However, CMOS processes are clearly emerging as being optimum for many types of circuit design. Further improvements are to be achieved by the utilisation of silicon-on-insulator CMOS and it is concluded that this technology will have an important place in the VLSI era. Methodologies for full custom VLSI design J DANNEELS and M MEINCK ElectL Commun. 58,389 (1984) As the complexity of integrated circuits continues to increase at a rapid pace, new design methodologies and tools are essential to ensure correct, cost-effective design. The goal is to be able to produce a correct chip design from the initial functional specification with minimal human interaction.
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