- Email: [email protected]
Experiments on Ge-GaAs heterojunctions
ABSTRACTS ON ELECTRONICS RELIABILITY AND MICROMINIATURIZATION
257
Micro-module technique: a modern construction method for communication engineering. S. STOLZE (VEB Keramische Werke), Radio und Fernsehen, Feb. 1963, pp. 68-72. Micro-module construction using stacks of ceramic plates on which are formed a range of circuit elements, with connections between individual plates made at their edges, is described. The economics of this form of construction are considered. Analysis of field effect transistors with arbitrary change distribution. R. R. BOCKEMUEHL, Proc. 1.E.E.E. , ED-10, No. 1, p. 31 (1963). Solutions of field effect equations in which carrier density and space-charge distributions are considered in general form show that the L F terminal characteristics are not strongly dependent on the shape of the distribution curves. General expressions for mutual transconductance, output conductance, junction capacitance and current amplification are derived as functions of the depletion layer thickness at the device boundaries. These expressions are not explicitly dependent on charge distribution. Relationships between the small signal and d.c. terminal characteristics depend on the shape of the charge distribution curves but cannot be varied by more than a factor of two. The shape of the device is shown to have secondary importance. SEMICONDUCTOR MICROMINIATURE INTEGRATED CIRCUITS An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes. L. M. LERMAN,Solid State Electron., Sept. 1962. A new solid state device, the M - O - S diode, of which an oxidized silicon surface is an integral part, is introduced and a theory for its operation in the absence of surface states is obtained. Experiments on Ge-GaAs heterojunctions. R. L. ANDERSON, Solid State Electron., Sept. 1962. The electrical characteristics of epitaxially formed junctions are described. I-V and electro-optical characteristics are consistent with a model in which the conduction and valence-band edges at the interface are discontinuous. Characteristics of PIN junctions produced by ion-drift techniques in silicon. J. W. MAYER,
J. Appl. Phys., Sept. 1962. P I N junctions were produced by ion drift using Li in p-type Si. Highly compensated intrinsic regions from 0.1 to 5-0 m m were obtained.
Molten metal etches for the orientation of semiconductors by optical techniques. J. W. FAUST, Jr., A. SACAR and H. F. JOHN, J. Electrochem. Soc., Sept. 1962. Under controlled conditions, the dissolution and redeposition of semiconductors in molten metals proceed along the same definite crystallographic planes. It has been found that these planes are (111) for Ge and Si, and (111) and (100) for the I I I - V intermetallic compounds. Undamaged germanium surfaces of high optical quality. T. M. DONOVANand B. O. SERAPHIN,
J. Electrochem. Soc., Sept. 1962. Discusses a technique which yields surfaces of about 0-1 p/in. flatness and a r m s roughness of only 10-13 •, approaching the finish of the best fuzed quartz optical flats.
Designing molecular circuits for use in complex systems. H. W. HENKELS,Electronics, Sept. 21, 1962. Discusses the standardization of basic system functions and describes functional electronic blocks which are under development. Thermal oxidation of silicon. M. P. FREEMAN, S. U. LI and W. YON JASKOWSKY,J. Appl. Phys., Sept. 1962. Tile oxidation rate of silicon in steam is dependent on the impurity concentration of the crystal. An impurity pile-up occurs near the silicon surface of phosphorous diffused wafers (surface concentration of 2 × 1021 cm -3) when treated at 970°C. Boron diffused wafers (surface concentration of 5 × 1018 cm -3) deplete their impurity concentration near the surface. Detection of surface conversion on germanium. J. LINDMAYERand C. WRIGLEY, Semiconductor Products, March 1963, p. 28. The space-charge capacitances of specially constructed diodes are used as a tool for detecting surface conversion on germanium. Measurement of the junction capacitance permits judging the extent and degree of conversion. Representative experimental examples of surface conversion are discussed. Some conclusions are drawn from present measurements about the likelihood of surface conversion and its effect upon reverse characteristics.
257
Micro-module technique: a modern construction method for communication engineering. S. STOLZE (VEB Keramische Werke), Radio und Fernsehen, Feb. 1963, pp. 68-72. Micro-module construction using stacks of ceramic plates on which are formed a range of circuit elements, with connections between individual plates made at their edges, is described. The economics of this form of construction are considered. Analysis of field effect transistors with arbitrary change distribution. R. R. BOCKEMUEHL, Proc. 1.E.E.E. , ED-10, No. 1, p. 31 (1963). Solutions of field effect equations in which carrier density and space-charge distributions are considered in general form show that the L F terminal characteristics are not strongly dependent on the shape of the distribution curves. General expressions for mutual transconductance, output conductance, junction capacitance and current amplification are derived as functions of the depletion layer thickness at the device boundaries. These expressions are not explicitly dependent on charge distribution. Relationships between the small signal and d.c. terminal characteristics depend on the shape of the charge distribution curves but cannot be varied by more than a factor of two. The shape of the device is shown to have secondary importance. SEMICONDUCTOR MICROMINIATURE INTEGRATED CIRCUITS An investigation of surface states at a silicon/silicon oxide interface employing metal-oxidesilicon diodes. L. M. LERMAN,Solid State Electron., Sept. 1962. A new solid state device, the M - O - S diode, of which an oxidized silicon surface is an integral part, is introduced and a theory for its operation in the absence of surface states is obtained. Experiments on Ge-GaAs heterojunctions. R. L. ANDERSON, Solid State Electron., Sept. 1962. The electrical characteristics of epitaxially formed junctions are described. I-V and electro-optical characteristics are consistent with a model in which the conduction and valence-band edges at the interface are discontinuous. Characteristics of PIN junctions produced by ion-drift techniques in silicon. J. W. MAYER,
J. Appl. Phys., Sept. 1962. P I N junctions were produced by ion drift using Li in p-type Si. Highly compensated intrinsic regions from 0.1 to 5-0 m m were obtained.
Molten metal etches for the orientation of semiconductors by optical techniques. J. W. FAUST, Jr., A. SACAR and H. F. JOHN, J. Electrochem. Soc., Sept. 1962. Under controlled conditions, the dissolution and redeposition of semiconductors in molten metals proceed along the same definite crystallographic planes. It has been found that these planes are (111) for Ge and Si, and (111) and (100) for the I I I - V intermetallic compounds. Undamaged germanium surfaces of high optical quality. T. M. DONOVANand B. O. SERAPHIN,
J. Electrochem. Soc., Sept. 1962. Discusses a technique which yields surfaces of about 0-1 p/in. flatness and a r m s roughness of only 10-13 •, approaching the finish of the best fuzed quartz optical flats.
Designing molecular circuits for use in complex systems. H. W. HENKELS,Electronics, Sept. 21, 1962. Discusses the standardization of basic system functions and describes functional electronic blocks which are under development. Thermal oxidation of silicon. M. P. FREEMAN, S. U. LI and W. YON JASKOWSKY,J. Appl. Phys., Sept. 1962. Tile oxidation rate of silicon in steam is dependent on the impurity concentration of the crystal. An impurity pile-up occurs near the silicon surface of phosphorous diffused wafers (surface concentration of 2 × 1021 cm -3) when treated at 970°C. Boron diffused wafers (surface concentration of 5 × 1018 cm -3) deplete their impurity concentration near the surface. Detection of surface conversion on germanium. J. LINDMAYERand C. WRIGLEY, Semiconductor Products, March 1963, p. 28. The space-charge capacitances of specially constructed diodes are used as a tool for detecting surface conversion on germanium. Measurement of the junction capacitance permits judging the extent and degree of conversion. Representative experimental examples of surface conversion are discussed. Some conclusions are drawn from present measurements about the likelihood of surface conversion and its effect upon reverse characteristics.