Solid State Communications, Vol. 96, No. 9. pp. 627-630, 1995 Elsevier Science Ltd Printed in Great Britain 0038-1098#5 $9.50+.00 0038-1098(95)00533-1
GIANT MAGNETORESISTANCE IN BULK (La3/4Tb&$al~Mn03 J.M. De Teresa, J. Blasco, M.R. Ibarra, J. Garcfa, C. Marquina, P. Algarabel and A. de1 Moral. Departamento de Ffsica de la Materia Condensada e Xnstituto de Ciencia de Ma&ales de Arag6n. Universidad de Earagoxa-CSIC, 50009- Zaragoxa, Spain.
(Received 12 July 1995; accepted 3 August 1995 by F. Yndurain)
Magnetoresistance (MR) as large as 70080% at H=12T has been observed in bulk (La3/4Tb&&alflnO3 at Tc-lOOK, the temperature at which the compound becomes ferromagnetic. This unusual effect is accompanied by magnetovolume effects above Tc which vanish rapidly below Tc. This fact along with the shape of the isotherms above and below Tc suggest two different mechanisms for the giant MR above and below Tc. Keywords: A. magnetically ordered systems, D. electronic transport, E. strain
1. Introduction
cubic perovskite-like
structure
where Mn ions are
separated by O-2 ions. In LaMnQ Materials exihibiting giant magnetoresistance
the Mn ions are
trivalent but the addition of B+2 ions causes equal number
(GMR) are desirable for many technoIogical applications
of Mnd ions to appear. They found that for some Mn4
and consequently research on this field is becoming vast.
concentrations the compounds become ferromagnetic and
Recently LaxBl_xMnO3
Zener proposed
(B=Ca,Sr,Ba,Pb)
compounds
the double-exchange
mechanism
to
have been found to show negative GMRl-6. MR values
explain the ferromagnetic interaction between Mn+3 and
greater than lOOBOO%were reported in La-Ca-Mn-0
films2 but MR values of bulk samples appear to be far
Mn4 ions through the Oe2 ion.@. The behaviour of the resistivity of these compounds is intriguing. Above Tc the
from such figures. The value for the MR is defined here as
behaviour is semiconductor-like and below Tc is metallic-
MR(%)=1OOx(p(0)-p(H))/p(H)).
like. The overall result is a p vs T curve with a maximum
A recent
polycrystalline ~.tjy&u7Ca()j$vhlO3 as large
as
polycrystalline
10000%.
on
showed MR values
In a systematic
(Tbr.,Lax)~Cal&vlnO3
work
thin
study
at around Tc. Conduction by magnetic polarons (based on
of
Mott’s ideas”)
we have found
has been
proposed
as being
the
for the x=0.75 compound the highest MR reported so far
mechanism responsibIe for the behaviour of resistivity above T&10. When magnetic polarons (holes which
in bulk samples: 70000% at H=12T. The mechanism
become localised, polarising a small region around them)
responsible
compounds is not completely clear but some ideas have
form. the conduction takes place via thermal hopping which would explain the rapid increase of p above Tc.
been put forward.
Very recent magnetoeIastic results support the idea of the
for such GMR values
in this sort of
existence of localised charges (polarons) below a determined temperature, Tp, which bear a local distortion
The basic magnetic and structural properties of LaxBl_,Mn03 were studied a long time ago by Jonker and Van Santen7l. They found small distortions from the
of the lattice*z. This fact brings about an anomalous connibution to the thermal expansion over the anharmonic 627
628
GIANT MAGNETORESISTANCE
Vol. 96. No. 9
phonon contribution in the temperature range T&TsTp.
done with silver paste on bar-shaped samples and a 220
The role of an external magnetic field in this region is to
Keithley current source was used to apply wnstant D.C.
inhibit the formation of polarons causing the observed
current. The magnetic field was applied parallel to the
negative MR. Below Tc the onset of ferromagnetism
curmnt. Linear thermal expansion (magnetostriction) was
causes the cross-over to the metallic regime. Ju et al.3
measured
using the strain-gauge
have proposed the double-exchange mechanism to explain
magnetostriction
the transfer of electrons through the material and the drop
perpendicular
technique.
results the strain parallel (111) and
(XI) to the applied field was measured.
of resistiviy. In this region they explained the GMR taking
Volume magnetostriction
into account the effect of domain-walls at low fleds and
tion are straightfowatdly calculated as
spin-alignment at high fields.
ht=xll- hl
field (up to 12T) on the transport and
magnetoelastic
properties
Tbl/4h/3CatnMn03,
of the compound
(La314
which shows the largest GMR
and anisotropic magnetostricco=Xl1+2hl and
respectively. Magnetization
In this paper we aim at studying the effect of the magnetic
For the
and
initial
magnetic
susceptibility (%A& under applied fields up to 5T were carried
out
with
a quantum
interference
device
magnetometer (SQUID).
reported on bulk samples so far.
2. Experimental details The (Lay4l%t/4)&al~Mn03
3.Results and discussion sample was
As ferromagnetism
seems to be a necessary
prepared using a gel precursor in order to obtain well-
condition for the appearance of GMR in these manganite
mixed reagents. Stochiometric amounts of La205, Tb407,
compounds, we firstly performed the magnetic charac-
CaCG3 and MnC05 with nominal purities higher than
terisation
99.9%, were dissolved in concentrated nitrid acid msulting
temperatures. In Egure 1 we show the results of X&C. .
of the compound
at different
fields
and
in a light solution. Afterwards, citric acid and ethylene glycol were added in a ratio of 4g citric acid to lml
The inset of figure 1 shows the spontaneous magnetization (Ms) vs temperature as obtained from Arrott’s plot from
ethylene glycol and lg metal nitrates. The solution was
where Tc=l03K is obtained. As X&C, at zero tleld gives
heated and the excess nitrid acid and water wen boiled off
us information about the spin correlation and it increases
giving a brown gel. The gel was heated to give a blackbrown powder. This precursor was calcined at 1173K overnight. The remaining black powder was cold pressed to 4Kbar and sintered
at 1273K for 3 hours with
intermediate grindings. Finally the pellet was sin&ted at 1573K for 8 hours resulting in a hard black ceramic material. The sample was analyzed by means of X-ray powder diffraction
resulting
in a single-phase
with a
perovskite-like structure. The X-ray diffraction pattern can be indexed
in the Pbnm spatial group showing
following
lattice
parameters:
a=0.5442( 1)
the nm,
b=O.5456( 1) nm and &).76994(g) nm.
1 A superconducting coil was used to produce steady magnetic
fields
0
up to 12T. Both resistance
50
100
150 T (K)
200
250
300
(magnetoresistance) and thermal expansion (magnetostrlction) were simultaneously
measured in two different
pieces of the same sample in order to correlate both
Figure 1. XA.C. as a function of temperature. The inset
properties. Resistance (magnetoresistance-) was measured
shows the results of the Arrott’s plot (see text). Lines are
with the standard four points technique; the contacts were
visual guides.
629
GIANT MAGNETORESISTANCE
Vol. 96, No. 9
abruptly with temperature reaching values of 3284 Qxcm
104
at around Tc. We also show the values of nsistance under E
different magnetic fields (1T and 12T). Two facts are
103
remarkable. Firstly the resistance is lower as the field is 2 x
102
.z > ‘S .z? 2
10’
higher and secondly
the temperature
at which the
maximum of resistivity takes place moves upwards with increasing fields (96K at H=O, 102K at H=l and 140K at H=l2T). The inset of figure 2 displays the huge values of MR at 12T. The MR ratio reaches the maximum value of 70000% at T= 90K.
100
50
0
100
150
200
250
300
T (K)
In figure 3 we have selected the isotherms at T=75K, 95K and 115K. At T=95K the curve shows hysteresis at low fields. Once the high field state has been
Figure
2. Resistance
under 0, 1T and 12T applied
magnetic fields. The inset shows the MR(%) ratio at 12T. The line is a visual guide.
reached, if this field is supressed the sample returns to another state with lower isotherms below (T=75K) inset of figure 4) suggests the GMR above and below
resistance. The shape of the and above (T=llSK) Tc (see two different mechanisms for Tc as observed in other related
with an extra contribution over the Curie-Weiss law from
compound&.
200K down it seems to indicate the presence of short
curvature. Above Tc a negative curvature appears to be
range magnetic order in this large range of temperatures
present at low fields changing to positive at high fields
above Tc. The decrease of XA.c. below &OK is a signal
through an inflexion point.
of the decreasing
mobility
of the domain
walls for
decreasing temperatures.
In order
In figure 2 we show the resistivity measured as a function
of temperature
under different
magnetic fields. At zero field the resistivity
9
0 4
Below Tc the curves show a positive
steady changes
to get better
insight
the
mechanisms
investigated
the change of length in the sample with
temperature and field. isotherms
(75K,
in both regions
into
underlying
we have
Figure 4 shows three selected
95K and
115K) of the volume
35
30 x - 25 E U 20
0
2
4
6
8
10
1;
H (T) Figure 3. Isotherm of MR at 95K increasing (0) and decreasing (0) the magnetic field. The inset shows the
Figure 4. Isotherms of o=hl+ 2x1 at 75K, 95K and 115K.
isotherms at 75K and 115K increasing the magnetic field. Lines are visual guides.
The inset shows the volume distortion at 12T obtained from LTE (+) and w (0). Lines are visual guides.
630
GIANT MAGNETORESISTANCE
Vol. 96, No. 9
magnetostrlction. The change of the shape of the curves below and above Tc is also visible. The anisotropic
follows: the mechanism which produces the increasing
magnetostriction
temperature is quenched applying magnetic field or with
(not shown here) was found to be the
typical of a ferromagnetic compound: zero above Tc and small below Tc (typically
in these compounds
the onset of ferromagnetism
when lowering
the
at Tc. Lower Tc implies
The inset of
larger resistivity and consequently a larger MR ratio at Tc.
figure 4 shows the difference in the relative volume of the
Above Tc, the conduction is considered to take place via
sample
hopping of polarons and the effect of the magnetic field is
under
aforementioned
0 and
Xt=SOxl@).
resistivity
12T obtained
isotherms
through
and through
the
the thermal
to destroy the polarons giving rise to negative GMR and
expansion under such fields (AV/V=3xAL/L=3x(L(OT)-
volume
L(lZT))/L(OT)). This difference becomes substantial at around Tp=ZOOK and disappears below Tc when the long
proposed by Ju et al. to explain the GMR is in agreement
range magnetic order between Mn+3 and Mn+4 ions
alignment seem to be responsible for the magnetization
appears.
and MR properties. The shape of the MR isotherms above and below Tc and the magnetoelastic effect above Tc From all the results
obtained
crystalline (La&Ibl&&al&in03
for poly-
we can say that
magnetostriction.
Below Tc the mechanism
with the experimental facts. Domain-walls effect and spin-
strongly support different mechanisms for the GMR below and above Tc.
substitution of 25% of La by Tb in the polycrystalline LayjCalnMnO3
compound
brings
about
To sum up, in a systematic study of the series
dramatic
changes in the magnetic and transport properties of this
(Tbl_xLa&&al~MnO3
material.
crystalline x20.75 compound a GMR ratio (70000% at
Tc changes from =265 K for the undoped
we have found for the poly-
compound to =103K for the doped one and the associated
12T) at the temperature marking the cross-over from
peak in MR reaches values of =70000%. The main effect
semiconductor-like to metallic-like behaviour. Magnetostriction effects above Tc should be taken into account
of Tb must be to weaken the double-exchange interaction between Mn+3 and Mn+4 lowering the value of Tc. The experimental facts seem to indicate that the MR effect at Tc is larger as Tc is lowe&*3. It can be explained as
to clarify the GMR mechanism. The GMR mechanism below Tc appears to be different from the mechanism above Tc. Low Tc seems necessary to get high GMR values.
References
1) R. von Helmolt, J. Wecker, B. Holxapfel, L. Schultz
6) S. Jin, H. M. O’Bryan, T. H. Tiefel, M. McCormack
and K. Samwer. Phys. Rev. Len. 71,2331(1993).
and W. W. Rhodes, Appl. Phys. Lett. 66,382 (1995)
2) M. MC Cormack, S. Jin, T. H. Tiefel, R. M. Fleming,
7) G. H. Jonker and J. H. Van Santen, Physica 16,337
Julia M. Phillips and R. Ramesh, Appl. Phys. Len. 64,
(1950) 8) G. H. Jonker, Physica 22,707 (1956)
3045 (1994) 3) H. L. Ju, J. Gopalakrishnan,
J. L. Peng, Qi Li, G. C.
9) C. Zoner, Phys.Rev. 82,403 (1952)
Xiong, T. Venkatesan, and R. L. Greene, Phys. Rev. B 51,
10) R. M. Kusters, J. Singleton, D. A. Keen, R. McGreevy
6143 (1995)
and W. Hayes, Physica B 155,362 (1989)
4) R. Mahesh, R. Mahendiran, A. K. Raychaudhuri and C.
11) N. F. Mott, Adv. Phys. 21,785 (1972)
N. R. Rao, J. Solid State Chem. 114,297 (1995)
12) M. R. Ibarra et al. (to be published)
5) J. 2. Liu, I. C. Chang, S. Irons, P. Klavins, R. N.
13) V. Caignaert, A. Maignan, and B. Raveau, Solid State
Shelton, K. Song and S. R. Wasserman, Appl. Phys. Lea.
Commun. 95.357 (1995)
66.3218 (1995)