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448
World Abstracts on Mioreelectronics and Reliability
ICs kelp to brat that pewef edMs. P. FLeTCm~t. F.~etro~. Weekly 7 (9. ~an'.:~974);, Field trials are about to, he made with two MOS integrated circuitsthat could allowekctr~'ty generating authoritim~to: shed noweuential loads selectively during periods of power shortage. The ICs; designed .and developed by Consumer Microcircuits Ltd, together form a receiver for use in "Ripple control systems". N m e w ~ e l ~ m / m of m e m a t ~ o p e m t i e ~ mpimers. R. A. P~osrd and J. L. A/,Dltlcll. Int. J. Electron. 36, 329 (1974). A study was made of two micropowered operational amplifiers to determined egradation of unity gain freqmmcy response, open-loop gain, and slew rate in amplifier circuits and maximum fr~lUenCy of oscillation in Colpitts and Wein bridge oscillators as programmed. Quiescent current was reduced below specified operating levels into the nA
region. A Iow-aoise ~ e d s.-baJ amplifier. G. E. VENDELIN, J. A. AgcHm~ and N. G g o g ~ B~CHT~. Microwave 3. 47 (Feb. 1974). A new microwave bipolar transistor structure with submicron emitter widths has been developed for low-noise appfications. The noise and gain-performance characteristics of this transistor will be described and compared to previous low-noise transistors. This transistor has been used in both a single-stage and a three-stage integrated S-hand amplifier with a minimum noise figure of 1.9 and 3-0 d.B..respeetively,The design and performance of these amplifien will he presented~ The three-stage amplifier has been designed for S-band phased-array radar applications at 3.1-3"5 GHz. The low-cost microwave dual-in-line package was chosen for its small size and low losses through S-band. The combination of low noise figure, 21 d.B. gain, +7 d.B.m output power, small size, and low cost should make this amplifier attractive for S-band radar applications.
E/D gate MOSFET. H. MASUDA,T. MASUHARAand M. NAGATA. Trans. lnstit. Electron. Commun. Enors Japan 57, 26 (Feb. 1974). A novel MOSFET structure, with enhancement and depletion'type gate region which we call E/D Gate, that realizes imp/oved transconductance with I / a n channel and yet pun¢h-through breakdown free MOSFET has been proposed earlier by the authors. In this paper, the improved current-Voltage characteristics of the device and the application to nsec switching circuits are discussed. M
I
e
~
lets nser taileraew mintcemlmter te Ms requill~meiMiL J. Sl~D~::Eiectronics 87 (2 May 1974). A new family of general-purpose minicomputers that meet custom needs is also one of the first production series to exploit the high density and low power dissipation of 4096-bit semiconductor chips. 7. S E M I C O N D U C T O R
INTEGRATED
Siliem gate MOS t ~ ~ (In French). J.-P;,Molt~u. Eor,de'eleev'te~e84k 100~Mar. 1974). Several types of Si,gate teclmologiesean he conceived, d e l u d i n g of cristal orientation and channel polarity. The principal physical reasons of,in ~.¢g'~t of these t e c A ~ . Q ~ are reviewed for each of ~them: (111) P channel, (100) P and N channel and (I00) complementary; general,fields.of appfication are discussed, in terms of supply voltage, speed and speed/power ratio, future developments are considered. Rec~4~w ~ a 2Tee ctaand F M - s y s t m m ~ t . . ~ isolktor IC's (IC'S m cerzmsl¢ ~ ) z~l i m t ~tte~ preanq~er fer 140 MHz. K. ~ . Proc. 5rh Colloquium Micro~we Comman. Vol. IV, p: 461. Akademiai ILiad<>, Budapest (1974). This paper describes the as~,mbly, containing the down-converter isolator and IF preamplifier for use in the microwave radio relay system FM2700frv/ 6700. This system operates in the freq~ncy range 6.4-7.1 GHz, each RF channel providing a capacity for 2700 telephone circuits. A 140 MHZ IF frequency is used with respect of RF selection and IF bandwidth. IC tester alma at ~ a l l met. B. CoLe. Electronics 128 (30May 1974). Falrchild'slow-cost,Quafifler90I replace~performance boards with software and also features self-test capability. G m e r a t ~ tom lamas with ealy two IC tksen. L. W. HERRING. Electronics I07 (30 May 1970), With very few external components, two IC timers can be made to function as a tone-burst generator that is useful for radio and telephone applications. In the circuit shown here, one timer controls the tone burst, and the other generates its frf~luency. A micreelectreek ~ to cUgita!.ma,erter. R. A. CALrm~s and M. T. HICK~Y.Proc. IEI~E 1974 24th£le~rfon. Compon. Conf. Washinyton, D,C. 13-15 May 274 (1974). This paper describes a unique 12 Bit Analog to Digital Converterwhich will convert signals more accurately in a package 1/20th the size of the traditinnal convener module. The design, operation, and comparison of various D/A approaches are covered. Emphasis is placed on key components such as the D/A converter, logic programmer, and high speed comparator. Error analysis illustiah~ ~'cCts of gaht~',offset, and speed of critical components o n overall performance. The advantages of size, perf0~ance, and cO~t using thin film hybrid assembly and construction techniques are explored. Interfac/~g a teletypewriter with ms IC micretlmcessor, S. K. ROn~TS. Electronics 96(25 July 1974). The lengthy software service routine generally required to interface a teletypewriter and an IC microprocessor, such as the Intel 8008, can be eliminated by the circuit shown here. A shiR register and some control logic are all that it takes, bringing total component cost to only about $6.50.
CIRCUITS,
Single ~ growiaS~aEparat~s using iafraxed ~ t i a g . T" MIZUTAI~: K. MgTsUMI, H. MAKINo, T. YXMAMOT0kfid T. KATO. NEC Res. & develop. 86 (Apr. 1974). A new single crystal growing apparatus based on the floating zone method hM: been developed, in which light from a halogen lamp is concentrated by a reflecting mirror system to heat the raw material rod, Two types of mirror system have been
DEVICES
AND
MATERIALS
developed and verified for practical use. M s apparatus can be practically used for growth of single crystals of various oxides, which are el~--trically insulating materials, such as oxide maMnetic materials, oxide dieketric materials, etc. In addition, this apparatus is also applicable to other heating utilizations, inclnding dete~rdainatinn of phase diagram, sintering mechanism research, etc.
World Abstracts on Mioreelectronics and Reliability
ICs kelp to brat that pewef edMs. P. FLeTCm~t. F.~etro~. Weekly 7 (9. ~an'.:~974);, Field trials are about to, he made with two MOS integrated circuitsthat could allowekctr~'ty generating authoritim~to: shed noweuential loads selectively during periods of power shortage. The ICs; designed .and developed by Consumer Microcircuits Ltd, together form a receiver for use in "Ripple control systems". N m e w ~ e l ~ m / m of m e m a t ~ o p e m t i e ~ mpimers. R. A. P~osrd and J. L. A/,Dltlcll. Int. J. Electron. 36, 329 (1974). A study was made of two micropowered operational amplifiers to determined egradation of unity gain freqmmcy response, open-loop gain, and slew rate in amplifier circuits and maximum fr~lUenCy of oscillation in Colpitts and Wein bridge oscillators as programmed. Quiescent current was reduced below specified operating levels into the nA
region. A Iow-aoise ~ e d s.-baJ amplifier. G. E. VENDELIN, J. A. AgcHm~ and N. G g o g ~ B~CHT~. Microwave 3. 47 (Feb. 1974). A new microwave bipolar transistor structure with submicron emitter widths has been developed for low-noise appfications. The noise and gain-performance characteristics of this transistor will be described and compared to previous low-noise transistors. This transistor has been used in both a single-stage and a three-stage integrated S-hand amplifier with a minimum noise figure of 1.9 and 3-0 d.B..respeetively,The design and performance of these amplifien will he presented~ The three-stage amplifier has been designed for S-band phased-array radar applications at 3.1-3"5 GHz. The low-cost microwave dual-in-line package was chosen for its small size and low losses through S-band. The combination of low noise figure, 21 d.B. gain, +7 d.B.m output power, small size, and low cost should make this amplifier attractive for S-band radar applications.
E/D gate MOSFET. H. MASUDA,T. MASUHARAand M. NAGATA. Trans. lnstit. Electron. Commun. Enors Japan 57, 26 (Feb. 1974). A novel MOSFET structure, with enhancement and depletion'type gate region which we call E/D Gate, that realizes imp/oved transconductance with I / a n channel and yet pun¢h-through breakdown free MOSFET has been proposed earlier by the authors. In this paper, the improved current-Voltage characteristics of the device and the application to nsec switching circuits are discussed. M
I
e
~
lets nser taileraew mintcemlmter te Ms requill~meiMiL J. Sl~D~::Eiectronics 87 (2 May 1974). A new family of general-purpose minicomputers that meet custom needs is also one of the first production series to exploit the high density and low power dissipation of 4096-bit semiconductor chips. 7. S E M I C O N D U C T O R
INTEGRATED
Siliem gate MOS t ~ ~ (In French). J.-P;,Molt~u. Eor,de'eleev'te~e84k 100~Mar. 1974). Several types of Si,gate teclmologiesean he conceived, d e l u d i n g of cristal orientation and channel polarity. The principal physical reasons of,in ~.¢g'~t of these t e c A ~ . Q ~ are reviewed for each of ~them: (111) P channel, (100) P and N channel and (I00) complementary; general,fields.of appfication are discussed, in terms of supply voltage, speed and speed/power ratio, future developments are considered. Rec~4~w ~ a 2Tee ctaand F M - s y s t m m ~ t . . ~ isolktor IC's (IC'S m cerzmsl¢ ~ ) z~l i m t ~tte~ preanq~er fer 140 MHz. K. ~ . Proc. 5rh Colloquium Micro~we Comman. Vol. IV, p: 461. Akademiai ILiad<>, Budapest (1974). This paper describes the as~,mbly, containing the down-converter isolator and IF preamplifier for use in the microwave radio relay system FM2700frv/ 6700. This system operates in the freq~ncy range 6.4-7.1 GHz, each RF channel providing a capacity for 2700 telephone circuits. A 140 MHZ IF frequency is used with respect of RF selection and IF bandwidth. IC tester alma at ~ a l l met. B. CoLe. Electronics 128 (30May 1974). Falrchild'slow-cost,Quafifler90I replace~performance boards with software and also features self-test capability. G m e r a t ~ tom lamas with ealy two IC tksen. L. W. HERRING. Electronics I07 (30 May 1970), With very few external components, two IC timers can be made to function as a tone-burst generator that is useful for radio and telephone applications. In the circuit shown here, one timer controls the tone burst, and the other generates its frf~luency. A micreelectreek ~ to cUgita!.ma,erter. R. A. CALrm~s and M. T. HICK~Y.Proc. IEI~E 1974 24th£le~rfon. Compon. Conf. Washinyton, D,C. 13-15 May 274 (1974). This paper describes a unique 12 Bit Analog to Digital Converterwhich will convert signals more accurately in a package 1/20th the size of the traditinnal convener module. The design, operation, and comparison of various D/A approaches are covered. Emphasis is placed on key components such as the D/A converter, logic programmer, and high speed comparator. Error analysis illustiah~ ~'cCts of gaht~',offset, and speed of critical components o n overall performance. The advantages of size, perf0~ance, and cO~t using thin film hybrid assembly and construction techniques are explored. Interfac/~g a teletypewriter with ms IC micretlmcessor, S. K. ROn~TS. Electronics 96(25 July 1974). The lengthy software service routine generally required to interface a teletypewriter and an IC microprocessor, such as the Intel 8008, can be eliminated by the circuit shown here. A shiR register and some control logic are all that it takes, bringing total component cost to only about $6.50.
CIRCUITS,
Single ~ growiaS~aEparat~s using iafraxed ~ t i a g . T" MIZUTAI~: K. MgTsUMI, H. MAKINo, T. YXMAMOT0kfid T. KATO. NEC Res. & develop. 86 (Apr. 1974). A new single crystal growing apparatus based on the floating zone method hM: been developed, in which light from a halogen lamp is concentrated by a reflecting mirror system to heat the raw material rod, Two types of mirror system have been
DEVICES
AND
MATERIALS
developed and verified for practical use. M s apparatus can be practically used for growth of single crystals of various oxides, which are el~--trically insulating materials, such as oxide maMnetic materials, oxide dieketric materials, etc. In addition, this apparatus is also applicable to other heating utilizations, inclnding dete~rdainatinn of phase diagram, sintering mechanism research, etc.