- Email: [email protected]
III-Vs review 1991 wafer supplier directory
T OR
Y
II.I-Vs REVIEW 1991 WAFER SUPPLIER DIRECTORY Jim
LEGEND
Jim
= COMPANY
~
AI-I'C ADVANCED TECHNOLOGY (TAIWAN) CORP No. l Industry E. Road V1, Science Based Industrial Park, Esin-Chu, Taiwan, ROC. • Tel/Fax: 886-035-777300/ 886-035-776464 • Dr H.Y. Wu.
= OTHEROFFICES
SI(LEC): 75mm, 50mm, N-type: (LEC) 75mm, 50mm, 70mm
= GaAs WAFERS
Seeds of customer size, polycrystal by LEC method, very low Si content cc
= OTHERGaAs PRODUCTS
~
= InP WAFERS
=OTHERInP PRODUCTS
= OTHERIIl-Vs PRODUCTS
O
= SPECIAL FEATURES
All entries correct at time of going to press. Companies not yet featured please contact the Editor.
Undoped InP + Sn, Zn and S doped.
@
lnP s o u r ~ materials cc<4xl0 c m - , chunk or wafer form.HB. ])repulls cc < 4x 1016cm-, LEC, wafer/ingot form. GaP N-type wafers. O
Undoped "D" shaped dense stoichiometric ingots of high purity can be supplied as whole ingots, or pieces cut to spec, suitable for single crystal growth, or LPE source materials. Whole single crystal boules. As-cut lightly etched and edge-rounded substrates. <111> or <100> single crystal wafers machine ground, cut and orientated to spec can be supplied in as-cut, lightly etched and edge-rounded condition.
©
IIl-VsReview1991.
Published by Elsevier Advanced Technology, Mayfield House, 256 BanburyRd.,OxfordOX2 7DH. Editor: Roy Szweda. Tel/fax: (44) 865 512242/310981.
HB and VB, Silicon and 6aAs Zinc doped wafers,
S.I. undoped LEC 76
undoped semi-insulating wafers. 1",2",2.5" & 3" dia. Rectangular + square wafers in various sizes available.
6aAs & 50 mm dia round.
,~ S.I. Cr-doped, Bridgman 50 & 25 m m dia round; squares. N type 50 & 25 m m dia round; squares. P type 50 & 25 mm dia round; squares. All final cleaning, packaging and test in Class 100 clean room environment. Leader in Bridgman GaAs, EPD
IR Laser window blanks O
Other semiconductor materials germanium wafers.
O
CRYSTACOMM INC 1599 North Shoreline Blvd, Mountain View, CA.94043-1313. • Tel/Fax: (415) 961-4311/4364.George Antypas
ENICHEM AMERICAS INC 21002 N 19th Ave. Bldg A-7; Phoenix, AZ 85027 USA. • Tel/Fax: (602) 5811400/4740.• RK Willardson/ I~Stremel.
~
LEC & EDG SI: 100,75 & 50mm; N-type 75, 50 & 25mm. EPD <50k, <5k, <200. l'olycrystal and GaAs for specific applications: sources etc.
None. Fe, S &Zndoped. O
Extensive characterisation: FTIR, EL2 TSC, PL, Hall effect, contactless resistivity, implant testing, subsurface damage, surface particulates.
Poly.
Jim
CRYSTAL SPECIALTIES INTERNATIONAL AKZO ELECTRONIC PRODUCTS GROUP 2853 Janitell Road, Colorado Springs, CO 80906, USA. • Tel/Fax: (719) 540-0990/ 0994 • Mr. Berry Beumer • Mr. George Sheese. -
GLOSSARY C/V: capacitancevoltage, EDG: EPD: etch pit density, FTIR: Fourier transform infra red (for carbon levels), GaAs: gallium arsenide, GaP: gallium phosphide, GaSh: gallium antimonide, HB: horizontal Bridgman, InAs: indium arsenide, InP: indium phosphide, LPE: liquid phase epitaxy, MBE: molecular beam epitaxy, MOVPE: metalIorganic VPE, PVS: photovoltage spectroscopy, Sh semi-insulating, 1-rv: total thickness variation, VB: vertical Bridgman, VPE: vapour phase epitaxy.
and F, The Old Brickyard, Ashton Keynes, Wilts. SN6 6QX, UK. (02851 861008/ 860278.
BERTRAM LABORATORIES INC 72 Readington Road, Somerville, New Jersey, NJ 08876, USA. • Tel/Fax: (908) 722-8577/722-8570. • Dr. Leslie Polgar.
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Frau Martina Messer, Chemetall GmbH, Fine Chemicals Dept, Reuterweg 14, Postfach 10 15 01, Frankfurt/Main 1, Germany D-6000. Tel/Fax: [49]69 159-2631/069 159 3018. UK & SCANDINAVIA - Peter Burgess, Promatech, Units E
~
Akzo Electronic Products BV, P.O. Box 9300, 6800 SB Arnhem, The Netherlands. Tel/Fax: 31 (0) 85 66 4670/5678. Contact: Mr. Wire Smit. FRANCE: (33) 1 45 91 00 08/48 65 21 93 - Mr. Ralph Hananel. GERMANY: (49) 07191 87262 Mr. Hans J. Michael. UK: (44) 0628 783576/784671 Contact: Mick Shropshall.
J
THE FURUKAWA ELECTRIC CO.LTD 6-1 Marunouchi 2chome, Chiyoda-ku, Tokyo 100 Japan. • Tel/Fax: 03-2863219, 03-286-3211/03-2863748, 03-286-3747.• Mr Saeki. ~
Suite 410, High Holborn house, 52-54 High Holborn, London WC1V 6RP. Tel/Fax: 01-405-6675/01-831-8336. GaAs Wafers SI:(LEC) lOOmm, 75mm, 50mm.
-
O
FETTesting, IR Analysis
Y
II.I-Vs REVIEW 1991 WAFER SUPPLIER DIRECTORY Jim
LEGEND
Jim
= COMPANY
~
AI-I'C ADVANCED TECHNOLOGY (TAIWAN) CORP No. l Industry E. Road V1, Science Based Industrial Park, Esin-Chu, Taiwan, ROC. • Tel/Fax: 886-035-777300/ 886-035-776464 • Dr H.Y. Wu.
= OTHEROFFICES
SI(LEC): 75mm, 50mm, N-type: (LEC) 75mm, 50mm, 70mm
= GaAs WAFERS
Seeds of customer size, polycrystal by LEC method, very low Si content cc
= OTHERGaAs PRODUCTS
~
= InP WAFERS
=OTHERInP PRODUCTS
= OTHERIIl-Vs PRODUCTS
O
= SPECIAL FEATURES
All entries correct at time of going to press. Companies not yet featured please contact the Editor.
Undoped InP + Sn, Zn and S doped.
@
lnP s o u r ~ materials cc<4xl0 c m - , chunk or wafer form.HB. ])repulls cc < 4x 1016cm-, LEC, wafer/ingot form. GaP N-type wafers. O
Undoped "D" shaped dense stoichiometric ingots of high purity can be supplied as whole ingots, or pieces cut to spec, suitable for single crystal growth, or LPE source materials. Whole single crystal boules. As-cut lightly etched and edge-rounded substrates. <111> or <100> single crystal wafers machine ground, cut and orientated to spec can be supplied in as-cut, lightly etched and edge-rounded condition.
©
IIl-VsReview1991.
Published by Elsevier Advanced Technology, Mayfield House, 256 BanburyRd.,OxfordOX2 7DH. Editor: Roy Szweda. Tel/fax: (44) 865 512242/310981.
HB and VB, Silicon and 6aAs Zinc doped wafers,
S.I. undoped LEC 76
undoped semi-insulating wafers. 1",2",2.5" & 3" dia. Rectangular + square wafers in various sizes available.
6aAs & 50 mm dia round.
,~ S.I. Cr-doped, Bridgman 50 & 25 m m dia round; squares. N type 50 & 25 m m dia round; squares. P type 50 & 25 mm dia round; squares. All final cleaning, packaging and test in Class 100 clean room environment. Leader in Bridgman GaAs, EPD
IR Laser window blanks O
Other semiconductor materials germanium wafers.
O
CRYSTACOMM INC 1599 North Shoreline Blvd, Mountain View, CA.94043-1313. • Tel/Fax: (415) 961-4311/4364.George Antypas
ENICHEM AMERICAS INC 21002 N 19th Ave. Bldg A-7; Phoenix, AZ 85027 USA. • Tel/Fax: (602) 5811400/4740.• RK Willardson/ I~Stremel.
~
LEC & EDG SI: 100,75 & 50mm; N-type 75, 50 & 25mm. EPD <50k, <5k, <200. l'olycrystal and GaAs for specific applications: sources etc.
None. Fe, S &Zndoped. O
Extensive characterisation: FTIR, EL2 TSC, PL, Hall effect, contactless resistivity, implant testing, subsurface damage, surface particulates.
Poly.
Jim
CRYSTAL SPECIALTIES INTERNATIONAL AKZO ELECTRONIC PRODUCTS GROUP 2853 Janitell Road, Colorado Springs, CO 80906, USA. • Tel/Fax: (719) 540-0990/ 0994 • Mr. Berry Beumer • Mr. George Sheese. -
GLOSSARY C/V: capacitancevoltage, EDG: EPD: etch pit density, FTIR: Fourier transform infra red (for carbon levels), GaAs: gallium arsenide, GaP: gallium phosphide, GaSh: gallium antimonide, HB: horizontal Bridgman, InAs: indium arsenide, InP: indium phosphide, LPE: liquid phase epitaxy, MBE: molecular beam epitaxy, MOVPE: metalIorganic VPE, PVS: photovoltage spectroscopy, Sh semi-insulating, 1-rv: total thickness variation, VB: vertical Bridgman, VPE: vapour phase epitaxy.
and F, The Old Brickyard, Ashton Keynes, Wilts. SN6 6QX, UK. (02851 861008/ 860278.
BERTRAM LABORATORIES INC 72 Readington Road, Somerville, New Jersey, NJ 08876, USA. • Tel/Fax: (908) 722-8577/722-8570. • Dr. Leslie Polgar.
~
Frau Martina Messer, Chemetall GmbH, Fine Chemicals Dept, Reuterweg 14, Postfach 10 15 01, Frankfurt/Main 1, Germany D-6000. Tel/Fax: [49]69 159-2631/069 159 3018. UK & SCANDINAVIA - Peter Burgess, Promatech, Units E
~
Akzo Electronic Products BV, P.O. Box 9300, 6800 SB Arnhem, The Netherlands. Tel/Fax: 31 (0) 85 66 4670/5678. Contact: Mr. Wire Smit. FRANCE: (33) 1 45 91 00 08/48 65 21 93 - Mr. Ralph Hananel. GERMANY: (49) 07191 87262 Mr. Hans J. Michael. UK: (44) 0628 783576/784671 Contact: Mick Shropshall.
J
THE FURUKAWA ELECTRIC CO.LTD 6-1 Marunouchi 2chome, Chiyoda-ku, Tokyo 100 Japan. • Tel/Fax: 03-2863219, 03-286-3211/03-2863748, 03-286-3747.• Mr Saeki. ~
Suite 410, High Holborn house, 52-54 High Holborn, London WC1V 6RP. Tel/Fax: 01-405-6675/01-831-8336. GaAs Wafers SI:(LEC) lOOmm, 75mm, 50mm.
-
O
FETTesting, IR Analysis