- Email: [email protected]
III-Vs review 1992 epiwafer supplier directory
III-Vs REVIEW 1 9 9 2 EPIWAFER SUPPLIER DIRECTORY HEADINGS Company Office, Contact, Tel/fax 1. Other Offices 2. Epitaxy technology used 3. Epitaxy material 4. Epitaxy structures 5. Custom epitaxy 6. Special Features of Service
Advanced Technology (Taiwan) Corp. No. 1 Industrial East Road VI, Science Based Industrial Park, Hsin-Chu, Taiwan, ROC. Contact Dr H.Y. Wu. Tel/fax: [886] 035 777300 / 776464. 1. Contact Head Office. 2. LPE. 3. GaP, GaAs. 4. 50mm dia LPE wafers can be supplied for red, standard green, or yellow green LEDs.
Bandgap Technology Corporation 325 Interlocken Parkway, Broomfield, CO 80021 USA. Tel/fax: [1] (303) 460-0700 / 466-0290. Contact: Carole Levers/Linda McBryde. 1. G e r m a n y : B a n d g a p Technology GmbH, CarlZeiss-Ring 14, 8045 Ismaning/Munchen, Germany. Tel/fax: [49] (089) 9965330 / 996533-20. Japan: Hakuto, Ltd, CPO Box 25, Tokyo 100-91, Japan. Tel/ fax: [81] 3-3225 8910 / 9009. 2. VPE, OMVPE, MBE (CBE for future development). All production systems are multi-wafer, high through-put, high unifor-
mity systems. 3. GaAs, A1GaAs, InGaAs, InAlGaAs (4th quarter 92, development work InP, InGaAsP). 4. HEMT, PHEMT, HBT, MESFET, HFET, VCSEL, diodes, buffers. Having three growth techniques allows us to grow the full range of structures. 5. All growth is done to customer proprietary specifications and non-destructively tested in Class 10 cleanroom. All specifications and cross-calibration measurements are arranged p r i o r to c o m m e n c i n g growth. 6. We can offer a full choice of multi-wafer growth techniques. Pre-qualification of layers can be performed utilizing our prototype fabrication capability and device testing. Complete inhouse physical, electrical and analytical facilities are available to assist in solving customer problems as well as to insure complete materials compliance.
Electro-Optek Electro-Optek Corporation, 3152 Kashiwa Street, Torrance, California 90505, USA. Tel: (310)534-3666; Fax: (310)539-8544. Contact: Dr William S. Chan. 1. Contact Head Office. 2. MBE. 3. InSb, InAsSb, InGaAs, A1GaAs, GaAs, GalnSb, SiGe, CoSi, PbS, PbSe. 4. Homojunction, heterojunction, strained superlattice, multiple q u a n t u m well. 5. Contact us to discuss your specifications. 6. Medium wavelength (3-5 micron) and long wave-
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length (8-12 micron) infrared focal plane array, surface emitting laser.
Epi Materials Ltd., Unit 3, Lancaster Way Business Park, Ely, Cambs. CB6 3NW. UK. Tel/fax: [44] 353 667772 / 667818. Contact: Jim Dixon. 1. Contact Head Office 2. MOVPE. 3. GaAs, A1GaAs, InP and quaternaries. 4. H E M T standard and pseudomorphic, HJBT, laser - visible and IR, LED, detector, MESFET, photocathode, solar cell. 5. Quotes made against customer's spec. 6. Large batch capacity, available in 1", 2", 3", 4" diameters and corresponding rectangular sizes. Full characterisation on all shipments, standard.
Epitaxiai Products International Ltd. Cypress Drive, St Mellons, Cardiff CF3 0EG, UK. Tel/fax: [ + 4 4 ] (0)222 794422 / 779929. Contact: Dr Drew Nelson or Dr Mike Scott. 1. North American Office: Gareth Llewellyn, Epitaxial Products Inc., Hilltop Center, Bldg B, 136 Harvey Rd., L o n d o n d e r r y N H 03053 USA. Tel/fax: [1] (603) 641 2002 / 2035. Japan: E&M Corp., Osaka, Japan. Contact Mr. Y.Uragami, Mr. E.Nakanishi. Tel/fax: [81] 6947 1175 / 1728. Taiwan Office: Jerry Lin, Conary Enterprise Co., Taipei, Taiwan, RoC. Tel/fax: [886] 2509 3174/5 / 2501 6278 /
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2501 6279. 2. MOVPE: Multiwafer for large scale production uniformity +/-1-2%. Single/dual wafer for R&D applications. Extensive range of materials and dopants, for all applications. In-house characterisation lab. 3. InP, InGaAs, InA1As, InGaAsP, InGaA1As, G a A s , A1GaAs, AlAs, GalnP, GaAIlnP, AIlnP. 4. Complete range of opto electronic and electronic device structures to customer specifications. PIN detectors (0.6-2.51am), LEDs and lasers (550nm> 1600nm including D H , GRINSCH, MQW, DFB), APDs, waveguides, PINFETs, OEICs, solar cells, Gunn diodes, MESFETs, HEMTs, PHEMTs, InP based HEMTs, HBTs (GaAs and lnP), varactors, SAW, I M P A T T , photocathodes (including In), CCD, mixers, MMICs, growth on patterned substrates, DFB gratings. 5. E.P.I. supplies wafers only to customer's unique specification. Confidentiality is maintained by secure coding and ordering system. E.P.I. has no standard device structures which could lead directly to a serious conflict of interest with customer's confidential designs. 7 Complete epiwafer service: full range of materials, production plus R&D. Total QA - company accredited to BS5750, ISO 9002, EN9003. Full electrical, optical and structural characterisation carried out in-
house. Comprehensive report prt,vided with all wafers. Quality assured substrate supply; MOVPE precursor testing service.
Epitronics Corp. 21002 North 19th Ave., Suite No 5. Phoenix AZ 85027, USA. Contact: Barb McCain / Dan Currie. Tel/fax: (602) 581 3663 / 3415. 1. European office: Gusset Consulting & Trading Co, contact Erwin Gusset, Tel/fax: [41] 71 415601 / 6353. Korea: (in USA) K Roh, Comtek. Tel/fax: (301) 869 5831 / 6158. In Korea: Jewoon Int'l. Contact Justin Chung, Tel/fax: [+ 82] (0)2 413 4056 / 4058. 2. MOVPE, (LPE and ICB research only). 3. GaAs, A1GaAs. 4. FET, H E M T , HJBT, D H & QW laser, LED, detector, Gunn, varactor, Schottky diode, photocathode, CCD. 5. Customers' specs reviewed, tolerances added or adjusted if necessary, and quoted. First pass growth parameters are determined from database of 7k epi runs. Single or multiple layer cal runs are used to assure correct thickness and cc prior to production. Each production run is characterised using a combination of measurement techniques. 6. Polaron, SEM, optical microscope, vdP and PL testing. Product guarantees. Specialised reactors: Zn only, Si only, pn junctions. Low pressure growth cap. + 1.25% thickness unif over 75mm wafer. Proven device results for GaAs device structures.
Kopin Corp,, 695 Mvtes Standish Blvd.. faunton, MA t1278(!. ~.'SA (k)ntact: Matthew,. Micci Fei fax: {508i N24 6696 ' 822 1381 1. t~uropean office: [IK tCIP, lel'la:~ [44] (0)403 63748 54963. Francc: Sofrasil,[33] I 4867 5990 4865 2193 German2r: HEK GmbH. Tel/fax: [49] 451 530040 5300450. Japan: Fuii. Tel/fax: [8l] 33 432 7776 / 436 5389. Netherlands, Denmark and Sweden:
i ~,,,~,t>ean M a r k e t P a r t n e r t~', , V M P , tel fax: [31] 4'950 45~i -~ ~d()VPI-L l=pltaxial (]aAs, ,'~l(,aA~ ~l~d ]n(kt,\~ structures o~: (;aAs :~d silicon substrates. -: tt]<'}:.Ts, carbon doped HB'[s, PIN. ,rod GaAs on Si. >. ('ustomer supplies layer by layer spec indicating thickness and doping. ,
('onltnued on page 02.
Hitachi Cable Ltd., Chiyoda Building, 2-1-2 Marunouchi, Chiyoda-ku, Tokyo 100, Japan. Contact: Mr I Miyake. Tel/fax: [81] 03 3216 1611 / 3213 0402. 1. Hitachi Cable Ltd., London Office, 4th F l o o r , 8 C o r k St, M a y f a i r , London W1X IPB. UK. Contact: Mr H. Kobayashi. Tel/fax: [44] (0)71 439 7223 / 494 1956. 3. LPE, MOVPE. 4. GaAs, AIGaAs, InGaAs. 5. LED, FET, H E M T , SBD. 6. Custom epi? Yes. 7. A single source of thick GaAIAs, epitaxial wafers, several h u n d r e d microns in thickness of GaA1As layer is available. Various MOVPE wafers in sizes from 2" to 4" are available. For Information Circle 223 iii~i~i~~i~"~::~.~~" .'::="~*::t~iii~ii~ii~ii~ii~iii~ii~t~i#~ ~i~/::~=:i2:%iii~~iii~i~i ii ~i~iii~iiiiiiiiiiiii i~i~iiiiiiigiii!iiiii![ iii¸!i%'ii17iiiiiTi~iiiiii[ii~i[i~ .4~i!i!~iiJilili!~i!ili~iiiiii!iiiiii!i!i(~
NEW for '92 HL5900+ ALL of the a,
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international Marketing, Bio-Rad H o u s e , Maylan~a. \ , Hemel H e m p s l e a d . H e r l f o r d s h i r e . HP2 7TD. England. P h o n e : +44 {442) 2~2-~52 in the USA ( a l l ,415} 9 6 1 - 6 q O 0
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For Information Circle 224
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For Information Circle 225
Kopin works closely with c u s t o m e r to d e v e l o p a manufacturable materials process for their specific application. 6. P-type layers up to I E20 cm -3 using C-doping. GaAs on Si wafers in 50-150mm.
Mitsubishi Kasei Polytec Company (MKP), 5-2 Marunouchi, 2 Chome, Chiyoda-ku, T o k y o 100, Japan. Tel/fax: [81] (03) 3283 4673 / 4485. Contact: Mr Noboru Tazaki. 1. USA: Mitsubishi Kasei America Inc., 2180 Sand Hill Rd, Suite 440, Melo Park, CA 94025 USA. Tel/ fax: (415) 854 5690 / 9797. Contact: Mr Kiyoshi Komatsu. France: Dr E. Prudhommeaux, Promecome (Europe), 68 Ave. du General Michel-Bizot, 75012 Paris, France. Tel/fax: [33] 1 4473 1072 / 4346 8592. Germany: Mr U Markert, Nisho lwai Deutschland G m b H , Kreuzstr. 34, 4000 D u s s e l d o r f l, G e r m a n y . Tel/fax: [49] 0211 1378262 / 324638. 2. MOVPE, MBE, VPE, LPE. 3. MOVPE: GaAs, GaAIAs DH and SL. MBE: GaAs, GaAIAs, D H and SL. VPE: GaAsP. LPE: GaAs, GaAlAs, SH and DH. 4. MOVPE and MBE. 67. Substrates: LEC - SI, undoped (2", 3", 4"). Conductive: n-type, Si doped, (1", 2", 2.5"). P-type, Zn doped, (1.5", 2").
Nippon Mining Co. Ltd. 10-l, Toranomon 2Chome, Minato-ku, Tokyo 105, Japan. Contact: Mr.
Takeda. Tel/fax: [81] (0)3 3505 8738 / 3505 8691. 1. Nippon Mining (UK) Ltd. Princes House, 95 Gresham Street,London E C 2 V 7 N A , U K . [44] (0)71 796 3345 / 3046. C o n t a c t : Mr K o t s u k i . USA office: 650 Castro
Strcci. Suite ±2 ~ '\Iou~ View, ( . \ ~)4( 4t [:SA (ontact: M ! N'liura Tel'fax (4t5) ~,~)! ¢~02 06O 7. V I' 1:;. 3. (;aAs. 4. S t a n d a r d : n ~ n.n- i (sub). Spike d o p e d n nl n2n-/i (sub), 5. Custom epi available. 6. High purity VPE growth. Usage of original substrates with low microscopic densities, controlled stoichiometry and homogeneous resistivity distribution. Various doping profiles on customer request. Various characterization: PL, CL, IR microscopy. X R R C , R H E E D , L E E D , SIMS, DLTS, SSMS. laill
Northeast Semiconductor Inc. Cornell Research & Technology Park, 767 Warren Road, Ithaca, New York 14850-1247 Contact: Geoffrey T. Burnham, President, tel/fax: [1] (607) 257 8827 . 7540. 1. E.Fishkill, New York. Contact: G.Menk, Tel/fax: (914) 894-1395. J a p a n (Showa Denko K.K., contact: Mr Yasuo Kano, Elec. Met'l. Div., 13-9 Shiba Daimon, 1-Chome, Minato-Ku, Tokyo 105, Japan. Tel/fax: [81] (0)3 5470-3520 . 3435-1034. 3. MBE with automated process control system. 4. GaAs, A1GaAs, InGaAs, AllnGaAs on GaAs, (A1,Ga) lnAs on InP. 5. M E S F E T (low noise, power), H E M T (atomic planar d o p e d , single & double heterostructure, pseudomorphic), HBT, superlattices, low-temperature buffers, Grinsch lasers. 6. Works with customer on his proprietary design (under non-disclosure agreem e n t ) , o r will a d a p t company design to requirem e n t s . All g r o w t h seq u e n c e s are c o m p u t e r achieved for reproducibil-
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t:otmded b,~ l.este,c 1 ~:a~tman and Richar~I Sheai\, NSI is the largesl : S , u p p l i e r o1" M B F glowlh heterostructures. Q ( report with each wai~.'r. Lots of : , - 5 wafers Imve tree test structure [i)r diagnostics (e.g. Hall mobiiity, p h o t o - r e f l e c t a n c e ) . R H E E D calibration for m o n o l a y e r control. Proprietary Epiware automation.
Picogiga Rue de la R6union, 91952 Les Ulis Cedex, France. Tel/Fax: (33) (1) 69 07 19 50 / 32 08. Contact: Jeff Rochette. I. USA: Picogiga Inc. Contact: Aina Carlsson. Tel/Fax: (803) 985 3431 984 3262. Japan: Jacstron. Contact: Mark Sekinobu. Tel/Fax: (81) 727 72 1221 1125. UK: Mi-Net Techn o l o g y , c o n t a c t : Mick Shropshall. Tel/Fax: {44] (0)628 783576 78467t. Korea: LTi. Contact: Soong Hak Lee. Tel/fax: 020 594 9916 9917 2. MBE. 3. GaAs / AIGaAs / InGaAs on GaAs and GalnAs / AlIn As on InP. 4. H E M T , P M - H E M T , FET, H F E T , HBT, laser. 5. Customer sends design. We offer quote. Technical discussion and cross-calib r a t i o n follow. W a f e r s shipped with QC report on uniformity, defect density, sheet resistance etc. All done under non-disclosure agreement. 6. Guarantees on unilbrmity, reproducibility, material quality, buffers leakage, QC report with every wafer, > 10 years experience on device processing and growth techniques. Technical expertise and understanding of customer needs. World leader in the market of epitaxy on S.I. substrates. Large volume available on new
multiwafer MBE systems
Quantum Epitaxial Designs, Inc., (QED) Ben Franklin fechnotog'r C e n t e r , 1t5 R e s e a r c h D r i v e , B e t h l e h e m . PA 18015, USA. Tel/Tax: (2[5) 861-6930 (215) 861-8247 Contact: "Will W e i s b e c k e r Tom Hierl. 1~ Japan: San-Es Iradmg Company, 6-15 Sangenjaya l-chome, Setagaya-ku. 154 tokyo, ,lapan Te.fa× ii3~,795-8121 I 3-3795-8008 Contact: Masao Takakura. Korea: Seokyo Commerce Co., Ltd, C.P.O. Box 9947, Seoul, 100-699, Korea. T e l fax: (02)-333-3926 (02)332-1789. C o n t a c t : Mr J.H. Lee. France: SOFRASIL S.A. (?entre Affaire Paris-Nord, lmmeuble "Le Bonaparte". 93153 Blanc Mesnil, France. T e l fax: {l ) 4591-0008 i~ t 48(;5'I~)3 ('ontact: Ralph ~la nane[. IUK P r o m a t e c h . lad, The Old Brickyard. :\shton Keynes, Wiltshire, SN6 6QX. Tel/thx: 0~85-86 1008 ,r" 0278, Contact: Peter Burgess. " QED has inte~ac M BE systems ~ith non-bonded ,:D '1 a n d 3 '~ s u b s t r a t e holders and large effusion cells which produce ih~," highest uniform, [o~.esl oval defect density MBE materials in the industr\~. G a A s . A I G a A s and lnOaAs o n (iaAs and [nP substrates. 4 (Productiont HEMT. pseudomorphic HEMT !single and double planar doped for iou noise and Power applications), H B I . MESFET, MISF17!T. Gunn, planar doped barvier, varactor, t under development) GRINSCH, S L G R I N S C H , MQW detectors. 5. QED specializes in working with each customer to design epitaxial profiles specific to their device ( ' o n t i n u e d on p a g e 6 4
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We didn't create photoreflectance technology. We just put it to work. Unique. Versatile.
Features that count.
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The Olympus PRS-1000. It not only brings together today's most advanced photoreflectance technology, but all the features that make it work.
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To find out what the PRS-1000 can
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For Information Circle 226
application. Once the specifications and device goals have been established, a quotation is prepared and submitted. Prior to growth, a Growth Verification Form is submitted where the specifications are confirmed. Typical delivery is within 3 weeks ARO. All measurable material parameters are fully guaranteed. Lot qualification on HBT material is available. 6. In three years, QED has become the leading volume supplier of MBE epiwafers in the USA. Our success is due to our willingness to perform as a team member with our customers where our design expertise, wafer quality and customer service is second to none. Accompanying every wafer is a QC r e p o r t which includes, Surfscan defect density mapping, contactless sheet resistance mapping, sheet resistance uniformity and % Std deviation, and Polaron CV profiling (upon request). For volume shipments and repeat orders, full charts with 3 sigma control limits are included. Our goal is to offer v o l u m e c u s t o m e r s "Process Ready Epiwafers" where all of the customer's i n c o m i n g QA is 100% certified and performed by QED. Showa Denko K.K. Electronics Business Headquarters, 13-9 Shiba Daimon 1-chome, Minato-ku, Tokyo 105, Japan. Tel/fax: [81] 3 5470 3578 / 3435 1034. I. Showa Denko (Europe) GmbH. Ulhandstr. 9, 4000 Dfisseldorf 1 Germany. Tel/fax: [49] 211 684035 / 6798665. USA - Showa Denko America, Inc., 951 Mariner's Island Blvd., Suite 680, San Mateo, CA 94404 USA. Tel/fax: (415) 345 1338 / 5403. Showa Denko Singapore
{Ptci Ltd.+ 4I}A Orchard R o a d 04-04+ S i n g a p o r e I)92:z ] e l Ia+. ':~+5 1 " : 2711 36803 ( 'ontact Mr. Yokota. 2. LPE and MOVPE, implanted wafers {selective if req'd i. 3. lnP, GaAs and AIGaAs. 4. LED, MESFET, H E M T single and double heterostructures, vatactor and mixer diodes. 5. No - structures available as epiwafers or chips. 6. Epiwafers and chips. Ion i m p l a n t e d w a f e r s also available. Laser marking and extensive characterisalion: FTIR, Hall, EL2, CV. implant testing, particulates etc., advanced packaging. Spire Corporation Patriots Park, Bedford, MA 01730 USA. Tel/fax: (617) 275 6000 / 275 7470. Contact: Kurt Linden. 1. Contact Head Office. 2. M O V P E high-thruput with 7x75mm or 5xl00mm wafers per run; thickness uniformity <2.5-5%; Zn, Si, C doping, unif <2.55%. 3. GaAs on GaAs or Si, A l G a A s , InP, l n G a A s , GaP, InGaAsP, GaAsP, InGaAIP. 4. Digital & microwave FETs & HEMTs, HJBT, DH & QW laser, LED, detector, Gunn, buffers, varactor, SAW, optical waveguides, I M P A T T & PIN diode, solar cell, photocathode, CCD, mixers 5. Yes. All e p i w a f e r s quoted based on nmterial and labor costs and on expected yields. 6. Electrical and optical characterization to ensure all outgoing deliveries meet customer's specs for carrier concentration, thickness, composition, abruptness, uniformity and defect density.
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Sumitomo Electric Indus tries Ltd. :%cnti,+-ond uci~ ,r i)'~ Koyakita I-('honlc. llann. Hyogo, 664 Japan, Tei,la \ is!] 727 72 22si "': +~::'~52 ('ontact: H. Inui I. IJSA: Sumitomo F.Icctrw CSA. C o n t a c t lhon'~as Miehe ]el;fax: t212! 30S 6444 6575. Semia Inc. Contact: Makoto fomiki. Tel:thx: (4151 765 1 t:_.24 362 4612. UK, t{urope: Sumitomo Electric Europe, Contact: Mr. N. Toyoda. Tel/fax: [44] (0181 905 7150-52 / 6120. 2. MOVPE. M B E VPF, LPE. 3. GaAs, AIGaAs, InGaAs. lnP. 4. H E M T , F E T , H B T . LED, Gunn, varactor, det e c t o r , laser, S c h o t t k y diode. 5. Contact our representative to forward the spec then we fully consider it. 6. Total manufacture from crystals to epiwafers. Extensive c h a r a c t e r i z a t i o n : uniformity, depth profile, buffer leakage, defect density, etc. Varo Inc - Advanced Materials Group 538 Shepherd Drive, Garl a n d , TX 7 5 0 4 6 - 9 0 1 5 . lISA. Tel/fax: (214) 487 4234 487 4240. Contact: Steve Lambert. 1 Contact Head Oft]ce. 2. I+PE. MOVPE. 3. GaAs, AIGaAs. lnGaAs. lnP. 4. HJBT, laser, I.ED, detector. G u n n . v a r a c t o r . photocathode 5. Yes - as per customer spec. 6. In-house epi characterisation: PL (RT and 4.2K), photoreflectance (RT and 77K), CV, Hall, S E M / EDX, scanning Auger microscope, and micro-sect i o n i n g kit. G u a r a n t e e material spec and provide c u s t o m e r with complete data set.
GLOSSA R~ ('BE: chemical beam cgi: {X'I): charge. ,oupM+J 3~ vice, C'V C : l l ) a C H a n c c - ' + , + ~ + tagc~ 1)+t ,i'+u+> ,: heterostructttrc: I I:T lici¢l effect lrau>;islo+. ~ IIR Fot, rie~ I [ a F '+4If't) I I,+I i}~{ " (iaAs: gallium arscnid¢: GaP: ga.llium phosphide, GSMBE: ga~ >ource MBE: ttEMT: high dectrot+ m~+bility transistor: tIBI: iw~ ~ : r o j u n c t i + u b+p > ~ transistor: IMPAI+f im pact-ionisat~ot~ a~ alanci~c transit time (diodck h,~t': indium phosphide, J f t l: junction FI-!T l.l{I): light emitting diode: I.+PE: liqtaal phase epitax~,: MBI<; mobcular beam cpitaxy: MES+ FET: metal-senficonducto~ FET: MOMBE: metafio~ganic MBE: MOVPE: mctallorganic \.PE: MQ\~,: tnultiple Q ~ : PI: p[]olo]tt minescencc: QW: quantum well: SEM El)X: scanning electron m~c~oscope dec tron dispersion analysis b~ x-rays: VPF: '.apour p h a s e epitaxv. ]'his directol? has becp, compiled frun~ mt'ormation supplied bx cotnpan~e~, f h i s is at rcade~ ~er~ice and the Editor lakes m" responsibility for errors o'omissions. If >our company has not been f e a t u r e d please call the Editor. The next issue ,aili featut+c ti~c Test and Measurement Equipment Suppliers Directory.
Copyright llI-V%Review April 1992. Published by' Elsevier Advanced Technology, Mayfield House, 256 Banbury Rd., Oxford OX2 7DH. Editor: Roy Szweda. Tel~fax: [+44] (0) 865 512242 310981.
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Advanced Technology (Taiwan) Corp. No. 1 Industrial East Road VI, Science Based Industrial Park, Hsin-Chu, Taiwan, ROC. Contact Dr H.Y. Wu. Tel/fax: [886] 035 777300 / 776464. 1. Contact Head Office. 2. LPE. 3. GaP, GaAs. 4. 50mm dia LPE wafers can be supplied for red, standard green, or yellow green LEDs.
Bandgap Technology Corporation 325 Interlocken Parkway, Broomfield, CO 80021 USA. Tel/fax: [1] (303) 460-0700 / 466-0290. Contact: Carole Levers/Linda McBryde. 1. G e r m a n y : B a n d g a p Technology GmbH, CarlZeiss-Ring 14, 8045 Ismaning/Munchen, Germany. Tel/fax: [49] (089) 9965330 / 996533-20. Japan: Hakuto, Ltd, CPO Box 25, Tokyo 100-91, Japan. Tel/ fax: [81] 3-3225 8910 / 9009. 2. VPE, OMVPE, MBE (CBE for future development). All production systems are multi-wafer, high through-put, high unifor-
mity systems. 3. GaAs, A1GaAs, InGaAs, InAlGaAs (4th quarter 92, development work InP, InGaAsP). 4. HEMT, PHEMT, HBT, MESFET, HFET, VCSEL, diodes, buffers. Having three growth techniques allows us to grow the full range of structures. 5. All growth is done to customer proprietary specifications and non-destructively tested in Class 10 cleanroom. All specifications and cross-calibration measurements are arranged p r i o r to c o m m e n c i n g growth. 6. We can offer a full choice of multi-wafer growth techniques. Pre-qualification of layers can be performed utilizing our prototype fabrication capability and device testing. Complete inhouse physical, electrical and analytical facilities are available to assist in solving customer problems as well as to insure complete materials compliance.
Electro-Optek Electro-Optek Corporation, 3152 Kashiwa Street, Torrance, California 90505, USA. Tel: (310)534-3666; Fax: (310)539-8544. Contact: Dr William S. Chan. 1. Contact Head Office. 2. MBE. 3. InSb, InAsSb, InGaAs, A1GaAs, GaAs, GalnSb, SiGe, CoSi, PbS, PbSe. 4. Homojunction, heterojunction, strained superlattice, multiple q u a n t u m well. 5. Contact us to discuss your specifications. 6. Medium wavelength (3-5 micron) and long wave-
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Epi Materials Ltd., Unit 3, Lancaster Way Business Park, Ely, Cambs. CB6 3NW. UK. Tel/fax: [44] 353 667772 / 667818. Contact: Jim Dixon. 1. Contact Head Office 2. MOVPE. 3. GaAs, A1GaAs, InP and quaternaries. 4. H E M T standard and pseudomorphic, HJBT, laser - visible and IR, LED, detector, MESFET, photocathode, solar cell. 5. Quotes made against customer's spec. 6. Large batch capacity, available in 1", 2", 3", 4" diameters and corresponding rectangular sizes. Full characterisation on all shipments, standard.
Epitaxiai Products International Ltd. Cypress Drive, St Mellons, Cardiff CF3 0EG, UK. Tel/fax: [ + 4 4 ] (0)222 794422 / 779929. Contact: Dr Drew Nelson or Dr Mike Scott. 1. North American Office: Gareth Llewellyn, Epitaxial Products Inc., Hilltop Center, Bldg B, 136 Harvey Rd., L o n d o n d e r r y N H 03053 USA. Tel/fax: [1] (603) 641 2002 / 2035. Japan: E&M Corp., Osaka, Japan. Contact Mr. Y.Uragami, Mr. E.Nakanishi. Tel/fax: [81] 6947 1175 / 1728. Taiwan Office: Jerry Lin, Conary Enterprise Co., Taipei, Taiwan, RoC. Tel/fax: [886] 2509 3174/5 / 2501 6278 /
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2501 6279. 2. MOVPE: Multiwafer for large scale production uniformity +/-1-2%. Single/dual wafer for R&D applications. Extensive range of materials and dopants, for all applications. In-house characterisation lab. 3. InP, InGaAs, InA1As, InGaAsP, InGaA1As, G a A s , A1GaAs, AlAs, GalnP, GaAIlnP, AIlnP. 4. Complete range of opto electronic and electronic device structures to customer specifications. PIN detectors (0.6-2.51am), LEDs and lasers (550nm> 1600nm including D H , GRINSCH, MQW, DFB), APDs, waveguides, PINFETs, OEICs, solar cells, Gunn diodes, MESFETs, HEMTs, PHEMTs, InP based HEMTs, HBTs (GaAs and lnP), varactors, SAW, I M P A T T , photocathodes (including In), CCD, mixers, MMICs, growth on patterned substrates, DFB gratings. 5. E.P.I. supplies wafers only to customer's unique specification. Confidentiality is maintained by secure coding and ordering system. E.P.I. has no standard device structures which could lead directly to a serious conflict of interest with customer's confidential designs. 7 Complete epiwafer service: full range of materials, production plus R&D. Total QA - company accredited to BS5750, ISO 9002, EN9003. Full electrical, optical and structural characterisation carried out in-
house. Comprehensive report prt,vided with all wafers. Quality assured substrate supply; MOVPE precursor testing service.
Epitronics Corp. 21002 North 19th Ave., Suite No 5. Phoenix AZ 85027, USA. Contact: Barb McCain / Dan Currie. Tel/fax: (602) 581 3663 / 3415. 1. European office: Gusset Consulting & Trading Co, contact Erwin Gusset, Tel/fax: [41] 71 415601 / 6353. Korea: (in USA) K Roh, Comtek. Tel/fax: (301) 869 5831 / 6158. In Korea: Jewoon Int'l. Contact Justin Chung, Tel/fax: [+ 82] (0)2 413 4056 / 4058. 2. MOVPE, (LPE and ICB research only). 3. GaAs, A1GaAs. 4. FET, H E M T , HJBT, D H & QW laser, LED, detector, Gunn, varactor, Schottky diode, photocathode, CCD. 5. Customers' specs reviewed, tolerances added or adjusted if necessary, and quoted. First pass growth parameters are determined from database of 7k epi runs. Single or multiple layer cal runs are used to assure correct thickness and cc prior to production. Each production run is characterised using a combination of measurement techniques. 6. Polaron, SEM, optical microscope, vdP and PL testing. Product guarantees. Specialised reactors: Zn only, Si only, pn junctions. Low pressure growth cap. + 1.25% thickness unif over 75mm wafer. Proven device results for GaAs device structures.
Kopin Corp,, 695 Mvtes Standish Blvd.. faunton, MA t1278(!. ~.'SA (k)ntact: Matthew,. Micci Fei fax: {508i N24 6696 ' 822 1381 1. t~uropean office: [IK tCIP, lel'la:~ [44] (0)403 63748 54963. Francc: Sofrasil,[33] I 4867 5990 4865 2193 German2r: HEK GmbH. Tel/fax: [49] 451 530040 5300450. Japan: Fuii. Tel/fax: [8l] 33 432 7776 / 436 5389. Netherlands, Denmark and Sweden:
i ~,,,~,t>ean M a r k e t P a r t n e r t~', , V M P , tel fax: [31] 4'950 45~i -~ ~d()VPI-L l=pltaxial (]aAs, ,'~l(,aA~ ~l~d ]n(kt,\~ structures o~: (;aAs :~d silicon substrates. -: tt]<'}:.Ts, carbon doped HB'[s, PIN. ,rod GaAs on Si. >. ('ustomer supplies layer by layer spec indicating thickness and doping. ,
('onltnued on page 02.
Hitachi Cable Ltd., Chiyoda Building, 2-1-2 Marunouchi, Chiyoda-ku, Tokyo 100, Japan. Contact: Mr I Miyake. Tel/fax: [81] 03 3216 1611 / 3213 0402. 1. Hitachi Cable Ltd., London Office, 4th F l o o r , 8 C o r k St, M a y f a i r , London W1X IPB. UK. Contact: Mr H. Kobayashi. Tel/fax: [44] (0)71 439 7223 / 494 1956. 3. LPE, MOVPE. 4. GaAs, AIGaAs, InGaAs. 5. LED, FET, H E M T , SBD. 6. Custom epi? Yes. 7. A single source of thick GaAIAs, epitaxial wafers, several h u n d r e d microns in thickness of GaA1As layer is available. Various MOVPE wafers in sizes from 2" to 4" are available. For Information Circle 223 iii~i~i~~i~"~::~.~~" .'::="~*::t~iii~ii~ii~ii~ii~iii~ii~t~i#~ ~i~/::~=:i2:%iii~~iii~i~i ii ~i~iii~iiiiiiiiiiiii i~i~iiiiiiigiii!iiiii![ iii¸!i%'ii17iiiiiTi~iiiiii[ii~i[i~ .4~i!i!~iiJilili!~i!ili~iiiiii!iiiiii!i!i(~
NEW for '92 HL5900+ ALL of the a,
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international Marketing, Bio-Rad H o u s e , Maylan~a. \ , Hemel H e m p s l e a d . H e r l f o r d s h i r e . HP2 7TD. England. P h o n e : +44 {442) 2~2-~52 in the USA ( a l l ,415} 9 6 1 - 6 q O 0
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For Information Circle 224
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For Information Circle 225
Kopin works closely with c u s t o m e r to d e v e l o p a manufacturable materials process for their specific application. 6. P-type layers up to I E20 cm -3 using C-doping. GaAs on Si wafers in 50-150mm.
Mitsubishi Kasei Polytec Company (MKP), 5-2 Marunouchi, 2 Chome, Chiyoda-ku, T o k y o 100, Japan. Tel/fax: [81] (03) 3283 4673 / 4485. Contact: Mr Noboru Tazaki. 1. USA: Mitsubishi Kasei America Inc., 2180 Sand Hill Rd, Suite 440, Melo Park, CA 94025 USA. Tel/ fax: (415) 854 5690 / 9797. Contact: Mr Kiyoshi Komatsu. France: Dr E. Prudhommeaux, Promecome (Europe), 68 Ave. du General Michel-Bizot, 75012 Paris, France. Tel/fax: [33] 1 4473 1072 / 4346 8592. Germany: Mr U Markert, Nisho lwai Deutschland G m b H , Kreuzstr. 34, 4000 D u s s e l d o r f l, G e r m a n y . Tel/fax: [49] 0211 1378262 / 324638. 2. MOVPE, MBE, VPE, LPE. 3. MOVPE: GaAs, GaAIAs DH and SL. MBE: GaAs, GaAIAs, D H and SL. VPE: GaAsP. LPE: GaAs, GaAlAs, SH and DH. 4. MOVPE and MBE. 67. Substrates: LEC - SI, undoped (2", 3", 4"). Conductive: n-type, Si doped, (1", 2", 2.5"). P-type, Zn doped, (1.5", 2").
Nippon Mining Co. Ltd. 10-l, Toranomon 2Chome, Minato-ku, Tokyo 105, Japan. Contact: Mr.
Takeda. Tel/fax: [81] (0)3 3505 8738 / 3505 8691. 1. Nippon Mining (UK) Ltd. Princes House, 95 Gresham Street,London E C 2 V 7 N A , U K . [44] (0)71 796 3345 / 3046. C o n t a c t : Mr K o t s u k i . USA office: 650 Castro
Strcci. Suite ±2 ~ '\Iou~ View, ( . \ ~)4( 4t [:SA (ontact: M ! N'liura Tel'fax (4t5) ~,~)! ¢~02 06O 7. V I' 1:;. 3. (;aAs. 4. S t a n d a r d : n ~ n.n- i (sub). Spike d o p e d n nl n2n-/i (sub), 5. Custom epi available. 6. High purity VPE growth. Usage of original substrates with low microscopic densities, controlled stoichiometry and homogeneous resistivity distribution. Various doping profiles on customer request. Various characterization: PL, CL, IR microscopy. X R R C , R H E E D , L E E D , SIMS, DLTS, SSMS. laill
Northeast Semiconductor Inc. Cornell Research & Technology Park, 767 Warren Road, Ithaca, New York 14850-1247 Contact: Geoffrey T. Burnham, President, tel/fax: [1] (607) 257 8827 . 7540. 1. E.Fishkill, New York. Contact: G.Menk, Tel/fax: (914) 894-1395. J a p a n (Showa Denko K.K., contact: Mr Yasuo Kano, Elec. Met'l. Div., 13-9 Shiba Daimon, 1-Chome, Minato-Ku, Tokyo 105, Japan. Tel/fax: [81] (0)3 5470-3520 . 3435-1034. 3. MBE with automated process control system. 4. GaAs, A1GaAs, InGaAs, AllnGaAs on GaAs, (A1,Ga) lnAs on InP. 5. M E S F E T (low noise, power), H E M T (atomic planar d o p e d , single & double heterostructure, pseudomorphic), HBT, superlattices, low-temperature buffers, Grinsch lasers. 6. Works with customer on his proprietary design (under non-disclosure agreem e n t ) , o r will a d a p t company design to requirem e n t s . All g r o w t h seq u e n c e s are c o m p u t e r achieved for reproducibil-
~ , gtlld p r o c e s ~ c o n t , , <
t:otmded b,~ l.este,c 1 ~:a~tman and Richar~I Sheai\, NSI is the largesl : S , u p p l i e r o1" M B F glowlh heterostructures. Q ( report with each wai~.'r. Lots of : , - 5 wafers Imve tree test structure [i)r diagnostics (e.g. Hall mobiiity, p h o t o - r e f l e c t a n c e ) . R H E E D calibration for m o n o l a y e r control. Proprietary Epiware automation.
Picogiga Rue de la R6union, 91952 Les Ulis Cedex, France. Tel/Fax: (33) (1) 69 07 19 50 / 32 08. Contact: Jeff Rochette. I. USA: Picogiga Inc. Contact: Aina Carlsson. Tel/Fax: (803) 985 3431 984 3262. Japan: Jacstron. Contact: Mark Sekinobu. Tel/Fax: (81) 727 72 1221 1125. UK: Mi-Net Techn o l o g y , c o n t a c t : Mick Shropshall. Tel/Fax: {44] (0)628 783576 78467t. Korea: LTi. Contact: Soong Hak Lee. Tel/fax: 020 594 9916 9917 2. MBE. 3. GaAs / AIGaAs / InGaAs on GaAs and GalnAs / AlIn As on InP. 4. H E M T , P M - H E M T , FET, H F E T , HBT, laser. 5. Customer sends design. We offer quote. Technical discussion and cross-calib r a t i o n follow. W a f e r s shipped with QC report on uniformity, defect density, sheet resistance etc. All done under non-disclosure agreement. 6. Guarantees on unilbrmity, reproducibility, material quality, buffers leakage, QC report with every wafer, > 10 years experience on device processing and growth techniques. Technical expertise and understanding of customer needs. World leader in the market of epitaxy on S.I. substrates. Large volume available on new
multiwafer MBE systems
Quantum Epitaxial Designs, Inc., (QED) Ben Franklin fechnotog'r C e n t e r , 1t5 R e s e a r c h D r i v e , B e t h l e h e m . PA 18015, USA. Tel/Tax: (2[5) 861-6930 (215) 861-8247 Contact: "Will W e i s b e c k e r Tom Hierl. 1~ Japan: San-Es Iradmg Company, 6-15 Sangenjaya l-chome, Setagaya-ku. 154 tokyo, ,lapan Te.fa× ii3~,795-8121 I 3-3795-8008 Contact: Masao Takakura. Korea: Seokyo Commerce Co., Ltd, C.P.O. Box 9947, Seoul, 100-699, Korea. T e l fax: (02)-333-3926 (02)332-1789. C o n t a c t : Mr J.H. Lee. France: SOFRASIL S.A. (?entre Affaire Paris-Nord, lmmeuble "Le Bonaparte". 93153 Blanc Mesnil, France. T e l fax: {l ) 4591-0008 i~ t 48(;5'I~)3 ('ontact: Ralph ~la nane[. IUK P r o m a t e c h . lad, The Old Brickyard. :\shton Keynes, Wiltshire, SN6 6QX. Tel/thx: 0~85-86 1008 ,r" 0278, Contact: Peter Burgess. " QED has inte~ac M BE systems ~ith non-bonded ,:D '1 a n d 3 '~ s u b s t r a t e holders and large effusion cells which produce ih~," highest uniform, [o~.esl oval defect density MBE materials in the industr\~. G a A s . A I G a A s and lnOaAs o n (iaAs and [nP substrates. 4 (Productiont HEMT. pseudomorphic HEMT !single and double planar doped for iou noise and Power applications), H B I . MESFET, MISF17!T. Gunn, planar doped barvier, varactor, t under development) GRINSCH, S L G R I N S C H , MQW detectors. 5. QED specializes in working with each customer to design epitaxial profiles specific to their device ( ' o n t i n u e d on p a g e 6 4
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We didn't create photoreflectance technology. We just put it to work. Unique. Versatile.
Features that count.
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The Olympus PRS-1000. It not only brings together today's most advanced photoreflectance technology, but all the features that make it work.
contact measu]
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To find out what the PRS-1000 can
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For Information Circle 226
application. Once the specifications and device goals have been established, a quotation is prepared and submitted. Prior to growth, a Growth Verification Form is submitted where the specifications are confirmed. Typical delivery is within 3 weeks ARO. All measurable material parameters are fully guaranteed. Lot qualification on HBT material is available. 6. In three years, QED has become the leading volume supplier of MBE epiwafers in the USA. Our success is due to our willingness to perform as a team member with our customers where our design expertise, wafer quality and customer service is second to none. Accompanying every wafer is a QC r e p o r t which includes, Surfscan defect density mapping, contactless sheet resistance mapping, sheet resistance uniformity and % Std deviation, and Polaron CV profiling (upon request). For volume shipments and repeat orders, full charts with 3 sigma control limits are included. Our goal is to offer v o l u m e c u s t o m e r s "Process Ready Epiwafers" where all of the customer's i n c o m i n g QA is 100% certified and performed by QED. Showa Denko K.K. Electronics Business Headquarters, 13-9 Shiba Daimon 1-chome, Minato-ku, Tokyo 105, Japan. Tel/fax: [81] 3 5470 3578 / 3435 1034. I. Showa Denko (Europe) GmbH. Ulhandstr. 9, 4000 Dfisseldorf 1 Germany. Tel/fax: [49] 211 684035 / 6798665. USA - Showa Denko America, Inc., 951 Mariner's Island Blvd., Suite 680, San Mateo, CA 94404 USA. Tel/fax: (415) 345 1338 / 5403. Showa Denko Singapore
{Ptci Ltd.+ 4I}A Orchard R o a d 04-04+ S i n g a p o r e I)92:z ] e l Ia+. ':~+5 1 " : 2711 36803 ( 'ontact Mr. Yokota. 2. LPE and MOVPE, implanted wafers {selective if req'd i. 3. lnP, GaAs and AIGaAs. 4. LED, MESFET, H E M T single and double heterostructures, vatactor and mixer diodes. 5. No - structures available as epiwafers or chips. 6. Epiwafers and chips. Ion i m p l a n t e d w a f e r s also available. Laser marking and extensive characterisalion: FTIR, Hall, EL2, CV. implant testing, particulates etc., advanced packaging. Spire Corporation Patriots Park, Bedford, MA 01730 USA. Tel/fax: (617) 275 6000 / 275 7470. Contact: Kurt Linden. 1. Contact Head Office. 2. M O V P E high-thruput with 7x75mm or 5xl00mm wafers per run; thickness uniformity <2.5-5%; Zn, Si, C doping, unif <2.55%. 3. GaAs on GaAs or Si, A l G a A s , InP, l n G a A s , GaP, InGaAsP, GaAsP, InGaAIP. 4. Digital & microwave FETs & HEMTs, HJBT, DH & QW laser, LED, detector, Gunn, buffers, varactor, SAW, optical waveguides, I M P A T T & PIN diode, solar cell, photocathode, CCD, mixers 5. Yes. All e p i w a f e r s quoted based on nmterial and labor costs and on expected yields. 6. Electrical and optical characterization to ensure all outgoing deliveries meet customer's specs for carrier concentration, thickness, composition, abruptness, uniformity and defect density.
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Sumitomo Electric Indus tries Ltd. :%cnti,+-ond uci~ ,r i)'~ Koyakita I-('honlc. llann. Hyogo, 664 Japan, Tei,la \ is!] 727 72 22si "': +~::'~52 ('ontact: H. Inui I. IJSA: Sumitomo F.Icctrw CSA. C o n t a c t lhon'~as Miehe ]el;fax: t212! 30S 6444 6575. Semia Inc. Contact: Makoto fomiki. Tel:thx: (4151 765 1 t:_.24 362 4612. UK, t{urope: Sumitomo Electric Europe, Contact: Mr. N. Toyoda. Tel/fax: [44] (0181 905 7150-52 / 6120. 2. MOVPE. M B E VPF, LPE. 3. GaAs, AIGaAs, InGaAs. lnP. 4. H E M T , F E T , H B T . LED, Gunn, varactor, det e c t o r , laser, S c h o t t k y diode. 5. Contact our representative to forward the spec then we fully consider it. 6. Total manufacture from crystals to epiwafers. Extensive c h a r a c t e r i z a t i o n : uniformity, depth profile, buffer leakage, defect density, etc. Varo Inc - Advanced Materials Group 538 Shepherd Drive, Garl a n d , TX 7 5 0 4 6 - 9 0 1 5 . lISA. Tel/fax: (214) 487 4234 487 4240. Contact: Steve Lambert. 1 Contact Head Oft]ce. 2. I+PE. MOVPE. 3. GaAs, AIGaAs. lnGaAs. lnP. 4. HJBT, laser, I.ED, detector. G u n n . v a r a c t o r . photocathode 5. Yes - as per customer spec. 6. In-house epi characterisation: PL (RT and 4.2K), photoreflectance (RT and 77K), CV, Hall, S E M / EDX, scanning Auger microscope, and micro-sect i o n i n g kit. G u a r a n t e e material spec and provide c u s t o m e r with complete data set.
GLOSSA R~ ('BE: chemical beam cgi: {X'I): charge. ,oupM+J 3~ vice, C'V C : l l ) a C H a n c c - ' + , + ~ + tagc~ 1)+t ,i'+u+> ,: heterostructttrc: I I:T lici¢l effect lrau>;islo+. ~ IIR Fot, rie~ I [ a F '+4If't) I I,+I i}~{ " (iaAs: gallium arscnid¢: GaP: ga.llium phosphide, GSMBE: ga~ >ource MBE: ttEMT: high dectrot+ m~+bility transistor: tIBI: iw~ ~ : r o j u n c t i + u b+p > ~ transistor: IMPAI+f im pact-ionisat~ot~ a~ alanci~c transit time (diodck h,~t': indium phosphide, J f t l: junction FI-!T l.l{I): light emitting diode: I.+PE: liqtaal phase epitax~,: MBI<; mobcular beam cpitaxy: MES+ FET: metal-senficonducto~ FET: MOMBE: metafio~ganic MBE: MOVPE: mctallorganic \.PE: MQ\~,: tnultiple Q ~ : PI: p[]olo]tt minescencc: QW: quantum well: SEM El)X: scanning electron m~c~oscope dec tron dispersion analysis b~ x-rays: VPF: '.apour p h a s e epitaxv. ]'his directol? has becp, compiled frun~ mt'ormation supplied bx cotnpan~e~, f h i s is at rcade~ ~er~ice and the Editor lakes m" responsibility for errors o'omissions. If >our company has not been f e a t u r e d please call the Editor. The next issue ,aili featut+c ti~c Test and Measurement Equipment Suppliers Directory.
Copyright llI-V%Review April 1992. Published by' Elsevier Advanced Technology, Mayfield House, 256 Banbury Rd., Oxford OX2 7DH. Editor: Roy Szweda. Tel~fax: [+44] (0) 865 512242 310981.
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