- Email: [email protected]
III–V Si heterostructure study forecasts $10bn+ market by year 2000
11
A 700-page final report, "High Performance Semiconductors In The 1990s... GaAs, InP, and Si Heterostructure ICs," identifies many new business opportunities.: Total worldwide heterostructure IC, HIC, revenue is expected to increase from $27M in 1990 to $918M in 1995, and then to $10.4bn in the year 2000. Henderson Ventures, a US electronics technology and market forecasting organisation, now in its eighth year of operation, recently completed a major global investigation of business opportunities for producers and users of heterostructure based IC technology. During the course of this year-long project, some 30 researchers around the world, including a team from Nomura Research Institute based in Japan, analyzed the development and application of highperformance semiconductor technology based on the use of heterostructure materials for fabricating transistors in ICs.
UET Claims First in US to Offer InP Epi-wafers United Epitaxial Technologies, Inc., UET,, Oregon, announces the expansion of its product line and becomes the first US merchant vendor to offer complex epitaxial optoelectronic and electronic device structures lattice matched to indium phosphide. Laser, detector, and HBT structures, incorporating epitaxial layers of InGaAsP and InP, are the very latest additions to an existing product range which includes GaAs, A1GaAs and
U PD ATE
]
III-V- Si Heterostructure Study Forecasts $ lObn+ Market by year 2000 INDUS tRIAL 8.q
CONSUMER
COMPUTER
38.3%
COMM
46.7%
10.1% MiLiTARY iNDUSTRIAL
~1.0%
$764 M 1995 Source:
Hen~ e r s o n
CONSUMER
11.4%
$9,175 M 2000
Vonture,~
lM~rldwide ~roduction shares for HET ICs by Equipment Market Segment. Data Current in US $ Million
Total work wide merchant and ca ptive HIC production i:; expected to increase front $2.2M in 1990 to $764M in 1995 and $9.2bn i a the year 2000. World~vide production of HICs )y major market s e g m e n t s shown above; comn Lercialcommunication ~rill be the leading appli cations a r e a
pseudomorp] lic structures. Accompan' ling the product line ~xpansion is a major expansion of the facility itself. Following the. installati,)n of additional reactor capacity, large volume production quantities of custom epita ~ial structures will shortly be available. Allowed for in the expansio~a is a multiwafer epitaxial capability for 4" diameter MESFET, HEMT and H BT structures. UET is now able to offer a supply of s~nall batches of epi-wafers for R&D (including indium- and phosphorus-containing alloys), with 'volume production of epi-wafers of more mature structures • Circle 254.
in 1995. However, it will surrender this lead to commercial computers in the latter 1990s as HICs a r e applied to high-performance, low-power, personal portable work-stations, computers, and interconnecting fibre and digital radio networks. One of their more unexpected conclusions is that
IN
consumer electronics will edge out military HIC production by the year 2000. Some principal consumer applications include onechip, ultra-low noise DBS down-converters and widely affordable consumer-owned GPS receivers. Leading merchant and captive producers of heteroepitaxial III-V materials and associated bulk substrates are expected to be important beneficiaries of dramatically increasing HIC production. The unique computer input/output analysis performed by Henderson Ventures, including yield and demand information, indicates the HIC requirement for hetero~pitaxial materials will increase from $41M in 1995 to $543M in the year 2000. This represents a compound annual growth rate of 68% during this 5 year period. An article expanding on this news item will appear in the next issue. • Circle 253.
BRIEF
US DOPPLER M O D U L E CONTRACT FOR M A R C O N I . Following success in the DBS market, the Microwave Div of MDS has won a contract from the USA for commercial microwave doppler modules against strong competition from USA and Japanese based companies. This considerable achievement springs directly from teaming arrangements between MDS and Alpha Industries, Boston, and demonstrates the potential of the reciprocal agreements that are now in place. •
NEW PACER InGaAsP LASERS. A new family of high reliability InGaAsP pulsed 1300nm laser diodes designed specifically for both mono and multi-mode fibre test systems and other high reliability applications. The devices are all housed in a high reliability DIL hermetic package, which is MIL STD. approved. The laser wavelength is 1300nm, two multi-mode and three mono-mode devices are available in the family.•
A 700-page final report, "High Performance Semiconductors In The 1990s... GaAs, InP, and Si Heterostructure ICs," identifies many new business opportunities.: Total worldwide heterostructure IC, HIC, revenue is expected to increase from $27M in 1990 to $918M in 1995, and then to $10.4bn in the year 2000. Henderson Ventures, a US electronics technology and market forecasting organisation, now in its eighth year of operation, recently completed a major global investigation of business opportunities for producers and users of heterostructure based IC technology. During the course of this year-long project, some 30 researchers around the world, including a team from Nomura Research Institute based in Japan, analyzed the development and application of highperformance semiconductor technology based on the use of heterostructure materials for fabricating transistors in ICs.
UET Claims First in US to Offer InP Epi-wafers United Epitaxial Technologies, Inc., UET,, Oregon, announces the expansion of its product line and becomes the first US merchant vendor to offer complex epitaxial optoelectronic and electronic device structures lattice matched to indium phosphide. Laser, detector, and HBT structures, incorporating epitaxial layers of InGaAsP and InP, are the very latest additions to an existing product range which includes GaAs, A1GaAs and
U PD ATE
]
III-V- Si Heterostructure Study Forecasts $ lObn+ Market by year 2000 INDUS tRIAL 8.q
CONSUMER
COMPUTER
38.3%
COMM
46.7%
10.1% MiLiTARY iNDUSTRIAL
~1.0%
$764 M 1995 Source:
Hen~ e r s o n
CONSUMER
11.4%
$9,175 M 2000
Vonture,~
lM~rldwide ~roduction shares for HET ICs by Equipment Market Segment. Data Current in US $ Million
Total work wide merchant and ca ptive HIC production i:; expected to increase front $2.2M in 1990 to $764M in 1995 and $9.2bn i a the year 2000. World~vide production of HICs )y major market s e g m e n t s shown above; comn Lercialcommunication ~rill be the leading appli cations a r e a
pseudomorp] lic structures. Accompan' ling the product line ~xpansion is a major expansion of the facility itself. Following the. installati,)n of additional reactor capacity, large volume production quantities of custom epita ~ial structures will shortly be available. Allowed for in the expansio~a is a multiwafer epitaxial capability for 4" diameter MESFET, HEMT and H BT structures. UET is now able to offer a supply of s~nall batches of epi-wafers for R&D (including indium- and phosphorus-containing alloys), with 'volume production of epi-wafers of more mature structures • Circle 254.
in 1995. However, it will surrender this lead to commercial computers in the latter 1990s as HICs a r e applied to high-performance, low-power, personal portable work-stations, computers, and interconnecting fibre and digital radio networks. One of their more unexpected conclusions is that
IN
consumer electronics will edge out military HIC production by the year 2000. Some principal consumer applications include onechip, ultra-low noise DBS down-converters and widely affordable consumer-owned GPS receivers. Leading merchant and captive producers of heteroepitaxial III-V materials and associated bulk substrates are expected to be important beneficiaries of dramatically increasing HIC production. The unique computer input/output analysis performed by Henderson Ventures, including yield and demand information, indicates the HIC requirement for hetero~pitaxial materials will increase from $41M in 1995 to $543M in the year 2000. This represents a compound annual growth rate of 68% during this 5 year period. An article expanding on this news item will appear in the next issue. • Circle 253.
BRIEF
US DOPPLER M O D U L E CONTRACT FOR M A R C O N I . Following success in the DBS market, the Microwave Div of MDS has won a contract from the USA for commercial microwave doppler modules against strong competition from USA and Japanese based companies. This considerable achievement springs directly from teaming arrangements between MDS and Alpha Industries, Boston, and demonstrates the potential of the reciprocal agreements that are now in place. •
NEW PACER InGaAsP LASERS. A new family of high reliability InGaAsP pulsed 1300nm laser diodes designed specifically for both mono and multi-mode fibre test systems and other high reliability applications. The devices are all housed in a high reliability DIL hermetic package, which is MIL STD. approved. The laser wavelength is 1300nm, two multi-mode and three mono-mode devices are available in the family.•