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Minority-carrier injection and transient response of a MOS capacitor
184
World Abstracts on Microelectronics and Reliability
voltage characteristics of metal-insulator-semiconductor tMIS) structures is derived. The possibility of determining the potential barrier shape of MIS structures using combined internal photoemission and capacitance-voltage measurements is discussed.
pie design, presents no instability and utilizes as completely
Resistive-insulated-gate arrays and their applications: an exploratory study. M. V. WHELAN, L. A. DAVERVELDand J. G. o~ GR~X)T. Philips Res. Rep. 30. 346 (1973). A resistive-
digital frequency synthesizer circuit in p-channel MOS enhancement-depletion-mode technology is presented, consisting of a Phase Comparator, an 8-fold switchable 6.5 MHz divider for the reference frequency and a 2.5 MHz synchronous divider, fully programmable between 2 ~ and 29, for the synthesized frequency, which can be chosen between 500 Hz and 500 MHz.
insulated-gate electrode with a voltage gradient applied along it has many uses. In this paper we present an exploratory investigation of a number of novel circuits in which the foregoing forms the backbone. We concentrate on three areas of application, namely steering circuits for electronic displays, analog-digital conversion and lightpattern scanning. Although we concentrate mainly on principles of operation, we also derive limits for salient characteristics, e.g. scanning speed, resolution. We do this with the aid of expressions based on certain simple models which have been verified by experiment.
An integrated injection logic (ILL) realization of phase locked loop. HIROAKt TERADA, KATSUHIKOASADA, TOSHIMI OKUBO and ZEN'ICHI KITAMURA.First European Solid State Circuits Cot!fi'rence (ESSCIRC), Canterbury p. 24. 2 5 Sept. 1975. This paper describes an IIL realization of a phaselocked loop (PLL). The PLL is formed around a current controlled multivibrator (ICO), phase detecter (PD) and D/A converter-filter circuits in which the feasibility of IlL technology is conveniently utilized.
A high density static master slave shiftregister in I2L. J. P. L. LAGERBERG. First European Solid State Circuits Con/erence (ESSCIRC, Canterbury p. 16. 2 5 Sept. 1975. A static shift register implemented in Integrated Injection Logic and performing a high bit density and an extremely low standby power consumption will be discussed. The shift register is of the master slave type whereby an injection coupling between the master and the slave is utilized as information transfer. A high accuracy differentiator using integrated circuits. G. BOLLE and P. MAR1ETTI. Alta Frequenza. XLIV, (12) 768 (1975). (In Italian). In this paper an active differentiator is presented which is capable of better performances with respect to other proposed circuits. It is implemented by means of usual linear integrated circuits, needs a fairly sim-
7. S E M I C O N D U C T O R
INTEGRATED
Injection of electrons from the surface breakdown region ofa p-n junction into thermal Si02. E. WINKLER. Nachrichtentechnik-Elektronik 26, (2) 66 (1976). (In German). Test results are given of the avalanche injection of "hot" electrons into the insulator of gate-controlled diodes. The injection current is limited up to the highest injection current density of 9 x t0 -2 A/cm 2 and is almost constant in the temperature range -60~C to 125~C. The greatest injection effectivity (IGo/lo) is 2.8 × 10 -3. For the electron traps a mean trap density of N = (9 + 2) × 1017 cm -3 and a capture cross section of an = (9 + 2) × 10 19 cm were determined.
Minority-carrier injection and transient response of a MOS capacitor. M. V. WHELAN. Philips. Res. Rep. 30. 262 (1975). The influence of minority carriers injected by a p-n junction across a quasi-neutral n layer on the transient response of a MOS capacitor is measured and explained quantitatively.
as possible the active elements band-width.
A monolithic digital frequency synthesizer for PLL systems. H. KEBLER. First European Solid State Circuits Confi,rence (ESSCIRC), Canterbury p. 58.2-5 Sept. 1975. A monolithic
An integrated wide-tunable sine oscillator. FRANK DOORENBOSCH. First European Solid State Circuits Conference tESSCIRC), Canterbury p. 52. 2 5 Sept. 1975. A sine oscillator has always been a very basic block in electronic circuitry. Nowadays, integrated circuit technology allows us to realize such a basic block, so that it may be used for many applications. This asks for the design of an integrated sine oscillator, that meets as many requirements as possible. For this reason the synthesis of an ideal sine oscillator has been investigated.
Integrated circuits for thermal imaging applications. E. R. BROWN and K. BAKER. First European Solid State Circuits Conference (ESSCIRC), Canterbury p. 48. 2-5 Sept. 1975. Infrared detector arrays are now readily available, as the number of elements on an array has increased the problem of providing processing electronics that maximise the signal detected by each element has become severe. The problems become most severe at the detector/amplifier interface. First-generation preamplifiers used small printed circuit boards using discrete components, hybrid versions of these amplifiers were later produced, but the ultimate in mechanical configuration lies in Monolithic Integrated circuit preamplifiers. The performance required from the amplifier depends on the system within which it is used; characteristics of detector, frequency response, output capability, power consumption. Since detector characteristics dominate amplifier performance a particular preamplifier can only have optimum characteristics for a limited range of detector types; but may still be able to operate with reduced performance for other detectors.
CIRCUITS,
DEVICES
AND
MATERIALS
Polarizabilities of shallow donors in silicon--a comment. K. YOSHIHIRO and G. YAMANOUCHI. Solid State Commun. 17. (12) 1479 (1975). A recent experiment on n-type As. P and Sb-doped Si samples to study the donor polarizabilities by the capacitance measurement should be reinterpreted on the basis of the d.c. resistivity data below 4.2 K together with the concentration vs resistivity relations at room temperature.
The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques. J. S. URANWALA,J. G. SIMMONS and H. A. MAR. Solid-State Electronics 19, 375 (1976). New techniques are used to study the emission and generation processes through, and to obtain the energy distribution of, interface traps situated throughout the bandgap of MNOS devices. The techniques are based on thermal and isothermal dielectric relaxation current techniques. The trap distribution is observed to contain two peaks, the
World Abstracts on Microelectronics and Reliability
voltage characteristics of metal-insulator-semiconductor tMIS) structures is derived. The possibility of determining the potential barrier shape of MIS structures using combined internal photoemission and capacitance-voltage measurements is discussed.
pie design, presents no instability and utilizes as completely
Resistive-insulated-gate arrays and their applications: an exploratory study. M. V. WHELAN, L. A. DAVERVELDand J. G. o~ GR~X)T. Philips Res. Rep. 30. 346 (1973). A resistive-
digital frequency synthesizer circuit in p-channel MOS enhancement-depletion-mode technology is presented, consisting of a Phase Comparator, an 8-fold switchable 6.5 MHz divider for the reference frequency and a 2.5 MHz synchronous divider, fully programmable between 2 ~ and 29, for the synthesized frequency, which can be chosen between 500 Hz and 500 MHz.
insulated-gate electrode with a voltage gradient applied along it has many uses. In this paper we present an exploratory investigation of a number of novel circuits in which the foregoing forms the backbone. We concentrate on three areas of application, namely steering circuits for electronic displays, analog-digital conversion and lightpattern scanning. Although we concentrate mainly on principles of operation, we also derive limits for salient characteristics, e.g. scanning speed, resolution. We do this with the aid of expressions based on certain simple models which have been verified by experiment.
An integrated injection logic (ILL) realization of phase locked loop. HIROAKt TERADA, KATSUHIKOASADA, TOSHIMI OKUBO and ZEN'ICHI KITAMURA.First European Solid State Circuits Cot!fi'rence (ESSCIRC), Canterbury p. 24. 2 5 Sept. 1975. This paper describes an IIL realization of a phaselocked loop (PLL). The PLL is formed around a current controlled multivibrator (ICO), phase detecter (PD) and D/A converter-filter circuits in which the feasibility of IlL technology is conveniently utilized.
A high density static master slave shiftregister in I2L. J. P. L. LAGERBERG. First European Solid State Circuits Con/erence (ESSCIRC, Canterbury p. 16. 2 5 Sept. 1975. A static shift register implemented in Integrated Injection Logic and performing a high bit density and an extremely low standby power consumption will be discussed. The shift register is of the master slave type whereby an injection coupling between the master and the slave is utilized as information transfer. A high accuracy differentiator using integrated circuits. G. BOLLE and P. MAR1ETTI. Alta Frequenza. XLIV, (12) 768 (1975). (In Italian). In this paper an active differentiator is presented which is capable of better performances with respect to other proposed circuits. It is implemented by means of usual linear integrated circuits, needs a fairly sim-
7. S E M I C O N D U C T O R
INTEGRATED
Injection of electrons from the surface breakdown region ofa p-n junction into thermal Si02. E. WINKLER. Nachrichtentechnik-Elektronik 26, (2) 66 (1976). (In German). Test results are given of the avalanche injection of "hot" electrons into the insulator of gate-controlled diodes. The injection current is limited up to the highest injection current density of 9 x t0 -2 A/cm 2 and is almost constant in the temperature range -60~C to 125~C. The greatest injection effectivity (IGo/lo) is 2.8 × 10 -3. For the electron traps a mean trap density of N = (9 + 2) × 1017 cm -3 and a capture cross section of an = (9 + 2) × 10 19 cm were determined.
Minority-carrier injection and transient response of a MOS capacitor. M. V. WHELAN. Philips. Res. Rep. 30. 262 (1975). The influence of minority carriers injected by a p-n junction across a quasi-neutral n layer on the transient response of a MOS capacitor is measured and explained quantitatively.
as possible the active elements band-width.
A monolithic digital frequency synthesizer for PLL systems. H. KEBLER. First European Solid State Circuits Confi,rence (ESSCIRC), Canterbury p. 58.2-5 Sept. 1975. A monolithic
An integrated wide-tunable sine oscillator. FRANK DOORENBOSCH. First European Solid State Circuits Conference tESSCIRC), Canterbury p. 52. 2 5 Sept. 1975. A sine oscillator has always been a very basic block in electronic circuitry. Nowadays, integrated circuit technology allows us to realize such a basic block, so that it may be used for many applications. This asks for the design of an integrated sine oscillator, that meets as many requirements as possible. For this reason the synthesis of an ideal sine oscillator has been investigated.
Integrated circuits for thermal imaging applications. E. R. BROWN and K. BAKER. First European Solid State Circuits Conference (ESSCIRC), Canterbury p. 48. 2-5 Sept. 1975. Infrared detector arrays are now readily available, as the number of elements on an array has increased the problem of providing processing electronics that maximise the signal detected by each element has become severe. The problems become most severe at the detector/amplifier interface. First-generation preamplifiers used small printed circuit boards using discrete components, hybrid versions of these amplifiers were later produced, but the ultimate in mechanical configuration lies in Monolithic Integrated circuit preamplifiers. The performance required from the amplifier depends on the system within which it is used; characteristics of detector, frequency response, output capability, power consumption. Since detector characteristics dominate amplifier performance a particular preamplifier can only have optimum characteristics for a limited range of detector types; but may still be able to operate with reduced performance for other detectors.
CIRCUITS,
DEVICES
AND
MATERIALS
Polarizabilities of shallow donors in silicon--a comment. K. YOSHIHIRO and G. YAMANOUCHI. Solid State Commun. 17. (12) 1479 (1975). A recent experiment on n-type As. P and Sb-doped Si samples to study the donor polarizabilities by the capacitance measurement should be reinterpreted on the basis of the d.c. resistivity data below 4.2 K together with the concentration vs resistivity relations at room temperature.
The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques. J. S. URANWALA,J. G. SIMMONS and H. A. MAR. Solid-State Electronics 19, 375 (1976). New techniques are used to study the emission and generation processes through, and to obtain the energy distribution of, interface traps situated throughout the bandgap of MNOS devices. The techniques are based on thermal and isothermal dielectric relaxation current techniques. The trap distribution is observed to contain two peaks, the