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Minority-carrier lifetime in dielectrically isolated single-crystal silicon films defined by electrochemical etching
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World Abstracts on Micz'oelectronics and Reliability
The electric field F(x) is employed to obtain a new expression for the junction capacitance C, holding in the general case of a non-uniform charge, whereas the electric potential v~(x) is used to calculate general expressions for the thermionic and photoelectric currents i and ivh, respectively, taking into account in this both the tunneling probability through the energy barrier and the many-valley structure of the semiconductor energy bands. Finally, from v~(x), C, i and ivh four new expressions of the energy barrier height of the contact are deduced. The theoretical results relative to the barrier height so determined (which hold for both n- and p-type semiconductors) are compared with published experimental values obtained, by means of capacitance and photocurrent measurements: (a) on contacts between n-type CdS and Au, Cu, Ag and Pt; (b) on contacts between n-type GaAs and Au, Ag, Cu, Sn, AI and Pt and; (c) on contacts between p-type GaAs and Au and A1. The agreement between the theoretical and experimental values is very good.
The built-in voltage and space charge layer capacitance of p - n junctions. W. KuzMIcz and A. SWlT. Solid St. Electron. 17, 457 (1974). The accuracy of the abrupt space charge edge (ASCE) approximation is studied. It is shown that the ASCE approximation is useful for exact capacitance calculations if the built-in voltage is assumed to be dependent on the space charge layer width. The classical formula. Electronic properties of undoped polycrystalline silicon. E. MUNOZ, J. M. Bolx, J. LLABgES, J. P. MONICO and J. P1QUERAS. Solid St. Electron. 17, 439 (1974). Standard semiconductor measurements and techniques have been applied to undoped, high-purity polycrystalline silicon to determine its electronic properties. Resistivity and Hall mobility were determined as function of temperature, and the ability of polycrystalline silicon to form Schottky barriers and p - i - n junctions has been evaluated experimentally. Present results show Si grain boundaries behaving as p-type layers separating high-resistivity grains. An effective mobility, half the monocrystalline value, and an average carrier density in the 10is cm -3 range are deduced. A qualitative model is discussed to describe present results. Line-shapes of localized impurity phonon modes of boron acceptors in silicon. M. JOUANNE,R. BESERMAN,M. BALKANsKI and K. P. JAIN. Solid St. Comm. 15, 255 (1974). The Raman scattering cross-section of localized phonon modes due to impurities has been measured. Interference effects between the localized phonon and electronic continuum scattering amplitudes are signalled by the onset line-shape asymmetries. Qualitative analysis of the results is given in terms of the Fano theory. Calculation of distribution coefficients of donors in l l l - V Semiconductors. G. B. STRINGFELLOW. d. Phys. Chem. Solids. 35, 775 (1974). The techniques recently developed for the calculation of II1-V ternary phase diagrams have been extended to the calculation of distribution coefficients of impurities in III-V semiconductors. The distribution coefficients are calculated with no adjustable parameters, the calculation requiring only the temperatures and entropies of fusion, binary phase diagrams and lattice parameters of the relevant III-V compounds, and the tetrahedral covalent radii, electronegativities, molar volumes and atomization energies of the donor impurities and group IIl and V elements concerned.
The calculation is carried out for common donors S, Se, Te and Sn at the melting points of the III-V compounds GaP, GaAs, GaSb, InP, InAs and InSb, and the results compared with experimental results where available. In GaAs and GaP, the distribution coefficients are calculated vs temperature for solidification from the group III rich melt.
Hall mobility in dielectrically isolated single-crystal silicon films defined by dectrochemical etching. T. 1. KAMINS. Solid St. Electron. 17, 667 (1974). The majority-carrier Hall mobility has been measured in thin, single-crystal silicon films defined by electrochemical etching. Both n-type and p-type films with dopant concentrations of about 1015 cm- ~ were studied. The mobilities observed in p-type thin films and in epitaxial control samples were almost identical while the mobilities measured in n-type films were markedly less than those in epitaxial control samples. This apparent anomaly is attributed to the presence of an n-type surfacecharge layer with lower carrier mobility near the bottom of the thin films, although it may possibly be related to voids formed in the n-type films. Measurements on very thin samples indicated that an n-type surface layer is left on the top surface of p-type films immediately after electrochemical etching. Minority-carrier lifetime in dielectrically isolated singlecrystal silicon films defined by electrochemical etching. T. [. KAMINS.Solid St. Electron. 17, 675 (1974). The minoritycarrier lifetime has been measured in thin, dielectrically isolated single-crystal silicon films defined by electrochemical etching. Both transient-current measurements on deepdepletion MOS transistors and recombination-current measurements on bipolar junction transistors have been used to determine the lifetime. Values of the order of 1/~sec have been observed in both n- and p-type films with dopant concentrations of about 10 t5 cm -3. It was found that the characteristics of the MOS transistors were not dominated by generation at either surface of the thin film. No differences were seen between the characteristics of bipolar transistors fabricated in the thin films and those of transistors fabricated in bulk control wafers. Epitaxial growth of metal single-crystal films. E. GRUNBAUM. Vacuum 24, 4, 153 (1974). A review of the epitaxial growth of metals in high and ultra-high vacuum leading to singlecrystal films is presented. The conditions for obtaining such films are described and tabulated for two groups of substrates: (i) metals, Si, Ge (strong interfacial bonding) and (ii) alkali halides and MgO cleavage faces (weak interfacial bonding). Information on the crystal defects and their relation with the growth parameters and annealing procedures is also given. Electrical characteristics of the SiO2-Si interface near midgap and in weak inversion. J. A. COOPERand SCHWARTZ. Solid St. Electron. 17, 641 (1974). The electrical characteristics of the SiO2-Si interface in depletion are well understood, but very little information is available on the behavior of surface states in the midgap and weak inversion regions. In this work we develop a general numerical model for the surface state branch which is valid in all bias regions. The model is compared to experimental results in detail, and the surface state density and electron capture cross-section are deduced in the lower half of the bandgap (weak inversion)
World Abstracts on Micz'oelectronics and Reliability
The electric field F(x) is employed to obtain a new expression for the junction capacitance C, holding in the general case of a non-uniform charge, whereas the electric potential v~(x) is used to calculate general expressions for the thermionic and photoelectric currents i and ivh, respectively, taking into account in this both the tunneling probability through the energy barrier and the many-valley structure of the semiconductor energy bands. Finally, from v~(x), C, i and ivh four new expressions of the energy barrier height of the contact are deduced. The theoretical results relative to the barrier height so determined (which hold for both n- and p-type semiconductors) are compared with published experimental values obtained, by means of capacitance and photocurrent measurements: (a) on contacts between n-type CdS and Au, Cu, Ag and Pt; (b) on contacts between n-type GaAs and Au, Ag, Cu, Sn, AI and Pt and; (c) on contacts between p-type GaAs and Au and A1. The agreement between the theoretical and experimental values is very good.
The built-in voltage and space charge layer capacitance of p - n junctions. W. KuzMIcz and A. SWlT. Solid St. Electron. 17, 457 (1974). The accuracy of the abrupt space charge edge (ASCE) approximation is studied. It is shown that the ASCE approximation is useful for exact capacitance calculations if the built-in voltage is assumed to be dependent on the space charge layer width. The classical formula. Electronic properties of undoped polycrystalline silicon. E. MUNOZ, J. M. Bolx, J. LLABgES, J. P. MONICO and J. P1QUERAS. Solid St. Electron. 17, 439 (1974). Standard semiconductor measurements and techniques have been applied to undoped, high-purity polycrystalline silicon to determine its electronic properties. Resistivity and Hall mobility were determined as function of temperature, and the ability of polycrystalline silicon to form Schottky barriers and p - i - n junctions has been evaluated experimentally. Present results show Si grain boundaries behaving as p-type layers separating high-resistivity grains. An effective mobility, half the monocrystalline value, and an average carrier density in the 10is cm -3 range are deduced. A qualitative model is discussed to describe present results. Line-shapes of localized impurity phonon modes of boron acceptors in silicon. M. JOUANNE,R. BESERMAN,M. BALKANsKI and K. P. JAIN. Solid St. Comm. 15, 255 (1974). The Raman scattering cross-section of localized phonon modes due to impurities has been measured. Interference effects between the localized phonon and electronic continuum scattering amplitudes are signalled by the onset line-shape asymmetries. Qualitative analysis of the results is given in terms of the Fano theory. Calculation of distribution coefficients of donors in l l l - V Semiconductors. G. B. STRINGFELLOW. d. Phys. Chem. Solids. 35, 775 (1974). The techniques recently developed for the calculation of II1-V ternary phase diagrams have been extended to the calculation of distribution coefficients of impurities in III-V semiconductors. The distribution coefficients are calculated with no adjustable parameters, the calculation requiring only the temperatures and entropies of fusion, binary phase diagrams and lattice parameters of the relevant III-V compounds, and the tetrahedral covalent radii, electronegativities, molar volumes and atomization energies of the donor impurities and group IIl and V elements concerned.
The calculation is carried out for common donors S, Se, Te and Sn at the melting points of the III-V compounds GaP, GaAs, GaSb, InP, InAs and InSb, and the results compared with experimental results where available. In GaAs and GaP, the distribution coefficients are calculated vs temperature for solidification from the group III rich melt.
Hall mobility in dielectrically isolated single-crystal silicon films defined by dectrochemical etching. T. 1. KAMINS. Solid St. Electron. 17, 667 (1974). The majority-carrier Hall mobility has been measured in thin, single-crystal silicon films defined by electrochemical etching. Both n-type and p-type films with dopant concentrations of about 1015 cm- ~ were studied. The mobilities observed in p-type thin films and in epitaxial control samples were almost identical while the mobilities measured in n-type films were markedly less than those in epitaxial control samples. This apparent anomaly is attributed to the presence of an n-type surfacecharge layer with lower carrier mobility near the bottom of the thin films, although it may possibly be related to voids formed in the n-type films. Measurements on very thin samples indicated that an n-type surface layer is left on the top surface of p-type films immediately after electrochemical etching. Minority-carrier lifetime in dielectrically isolated singlecrystal silicon films defined by electrochemical etching. T. [. KAMINS.Solid St. Electron. 17, 675 (1974). The minoritycarrier lifetime has been measured in thin, dielectrically isolated single-crystal silicon films defined by electrochemical etching. Both transient-current measurements on deepdepletion MOS transistors and recombination-current measurements on bipolar junction transistors have been used to determine the lifetime. Values of the order of 1/~sec have been observed in both n- and p-type films with dopant concentrations of about 10 t5 cm -3. It was found that the characteristics of the MOS transistors were not dominated by generation at either surface of the thin film. No differences were seen between the characteristics of bipolar transistors fabricated in the thin films and those of transistors fabricated in bulk control wafers. Epitaxial growth of metal single-crystal films. E. GRUNBAUM. Vacuum 24, 4, 153 (1974). A review of the epitaxial growth of metals in high and ultra-high vacuum leading to singlecrystal films is presented. The conditions for obtaining such films are described and tabulated for two groups of substrates: (i) metals, Si, Ge (strong interfacial bonding) and (ii) alkali halides and MgO cleavage faces (weak interfacial bonding). Information on the crystal defects and their relation with the growth parameters and annealing procedures is also given. Electrical characteristics of the SiO2-Si interface near midgap and in weak inversion. J. A. COOPERand SCHWARTZ. Solid St. Electron. 17, 641 (1974). The electrical characteristics of the SiO2-Si interface in depletion are well understood, but very little information is available on the behavior of surface states in the midgap and weak inversion regions. In this work we develop a general numerical model for the surface state branch which is valid in all bias regions. The model is compared to experimental results in detail, and the surface state density and electron capture cross-section are deduced in the lower half of the bandgap (weak inversion)