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Monolithic d-a converter operates on single supply
World Abstracts on Microelectronics and Reliability to the solid solubility limit. These solutions are useful for deep junction formation in silicon.
Microcrack detection in silicon crystals with an ultrasonic sonoprobe. D. C. GUIDICL Microelectron. J. 11, (1) 37 (1980). Detecting microcracks in silicon wafers is important because of yield losses which might occur during crystal slicing or thermal processing. Although this paper discusses a non-destructive testing (NDT) method which can be used to detect microcracks in 3-inch diameter silicon crystals, the technique and the following ASTM definitions are also applicable to silicon wafers.
6. MICROELECTRONICS
547
Processing latitude in photoresist patterning. CHERYL A. DECKERT and DEBRA A. PETERS. Solid-St. Technol. p. 76 (January 1980). The interdependence of exposure and development parameters in processing positive photoresists has been explored in order to define a process latitude characteristic for each resist. A broad process latitude is one desirable feature of a photor.esist material, and thus process latitudes have been determined for a number of commercially available resists. The primary utility of the process latitude concept is to permit definition of.a suitable process for a photoresist that has been chosen for a particular application based on other parameters of interest.
COMPONENTS, SYSTEMS AND EQUIPMENT
10-ns monolithic d-a converter keeps bipolar drive circuits hustling. BILL BLOODand LORENKtHSEY. Electronics p. 140 (22 November 1979). Teamed with fast ECL microprocessor, 8-bit converter produces wide variety of high-resolution output waveforms.
Correcting errors digitally in data acquisition and control. PAUL PRAZAKand ANDRIJ MROZOWSKI.Electronics pl 123 (22 November 1979). Using a microprocessor in addition to analog techniques optimizes the compensation of gain and offset errors.
Partial RAMs can fill today's memory boards. JERRY DONALDSON. Electronics p. 131 (17 January 1980). Bitmapping hardware rescues mostly good random-access memory chips for use in designs that will later switch to fully functional devices.
Microprocessor adds flexibility to television control system. KAAgE KARSTAD. Electronics p. 132 (22 November 1979). Programmable TV prototype synthesizes channel frequencies; features can be added easily through software modifications.
Good bits swapped for bad in 64-kilobit E-PROM. VERNON G. McKENNY. Electronics p. 115 (13 March 1980). Ultraviolet-erasable memory has two redundant storage blocks to improve yield; two test modes spot cell threshold variations.
Millimeter-wave ICs spring from the lab. NARESHC. DEe and R~o MIYrRA. Microwaves p. 38 (October 1979). Millimeter-wave integrated circuits are elbowing their way into microwave systems with smaller, lower-power packages. Learn about the.transmission media and device performance.
Two-chip data-encryption unit supports multi-key systems. THOMASHUMPHREYand FRANKL. TOTH. Electronics p. 136 (17 January 1980). One version of the set operates at a data rate of 11,500 bits/second. PZC-MOS microcomputer family attains n-MOS performance. GEORGESIMMONS,RICH BURNLEY, CHUCK SEABORG and KEITH WINTER.Electronics p. 111 (22 November 1979). Double-polysilicon C-MOS process drops power consumption; CPU combines best attributes of 8085 and Z80. Isoplanar-S scales down for new heights in performance. DEVEREUX RICE. Electronics p. 137 (6 December 1979). Device scaling, the source of MOS's spurt to overtake bipolar, will also give lsoplanar processing a second wind. V-MOS outstrips bipolar for power. BRUCE LEBoss. Electronics p. 85 (22 November 1979). V for V-groove MOS logic may be out of the ballgame, but V for vertical power MOS FET is headed for victory• Very-high-speed silicon-on-eapphire integrated circuits. D. H. PHILLIPS,D. K. KINELL,D. G. GIRTONand L. KITAJEWSKI.Radio Electron. Eng. 49, (11) 581 (November 1979). Very-high-speed silicon-on-sapphire (s.o.s.) n-channel m.o.s.f.e.t.s have been fabricated which demonstrated a maximum oscillating frequency of approximately 6.4 GHz. These m.o.s.f.e.t.s--tost transistors on an integrated circuit-were fabricated with a process which can be used to fabricate high-speed integrated circuits• Spacecraft data processing requirements are evolving to indicate the need for very-high-speed devices which are capable of being integrated into large-scale circuits• Improvements in high-speed data processing communications systems are badly needed. Many of these applications will be met by very-high-speed s.o.s, integrated circuits.
Development system lays basis for fully integrated VLS! design center. CHARLES H. HOUSE. Electronics p. 143 (28 February 1980). Through a common file, all design and support engineers can share information on a product throughout its life cycle. Monofithic d-a converter operates on single supply. BRUCE AMAZEEN, PE'rER HOLLOWAY and Douo M~CER. Electronics p. 125 (28 February 1980). Microprocessor-compatible chip runs on +5 volts, includes reference, latches and amplifier. IC controls loudness of TV sound channel ARTHUR ERIKSON. Electronics p. 3E (31 January 1980). Integrated circuit for television sound circuitry boosts treble and bass at low volumes. LSi processor mirror high-performance minicomputer. MICHAEL DRUKE, RONALDGUSOWSKI,EDWARD BUCKLEY, DEAN CARSFAZRV,RO~F~ MARCH and RICHARD FEAVER. Electronics p. 119 (14 February 1980). Parallel-pipelines MOS chip machine matches Eclipse C/350's throughput; two optional ICs support floating-point and commercial extensions. Versatile LSI frequency synthesisor system. T. G. GILF_&
Electron. Components AppL 2, (2) 91 (February 1980). The HEF4750 and HEF4751* ICs described here form the basis for a simply constructed "universal", single-loop phase-locked frequency synthesiser suitable for professional and military equipment. Moreover, the ICs replace the large number of SSI and MSI devices currently used in frequency synthesisers,and therefore now make the use of frequency synthesisers in low-cost equipment a realisticproposition.
Microcrack detection in silicon crystals with an ultrasonic sonoprobe. D. C. GUIDICL Microelectron. J. 11, (1) 37 (1980). Detecting microcracks in silicon wafers is important because of yield losses which might occur during crystal slicing or thermal processing. Although this paper discusses a non-destructive testing (NDT) method which can be used to detect microcracks in 3-inch diameter silicon crystals, the technique and the following ASTM definitions are also applicable to silicon wafers.
6. MICROELECTRONICS
547
Processing latitude in photoresist patterning. CHERYL A. DECKERT and DEBRA A. PETERS. Solid-St. Technol. p. 76 (January 1980). The interdependence of exposure and development parameters in processing positive photoresists has been explored in order to define a process latitude characteristic for each resist. A broad process latitude is one desirable feature of a photor.esist material, and thus process latitudes have been determined for a number of commercially available resists. The primary utility of the process latitude concept is to permit definition of.a suitable process for a photoresist that has been chosen for a particular application based on other parameters of interest.
COMPONENTS, SYSTEMS AND EQUIPMENT
10-ns monolithic d-a converter keeps bipolar drive circuits hustling. BILL BLOODand LORENKtHSEY. Electronics p. 140 (22 November 1979). Teamed with fast ECL microprocessor, 8-bit converter produces wide variety of high-resolution output waveforms.
Correcting errors digitally in data acquisition and control. PAUL PRAZAKand ANDRIJ MROZOWSKI.Electronics pl 123 (22 November 1979). Using a microprocessor in addition to analog techniques optimizes the compensation of gain and offset errors.
Partial RAMs can fill today's memory boards. JERRY DONALDSON. Electronics p. 131 (17 January 1980). Bitmapping hardware rescues mostly good random-access memory chips for use in designs that will later switch to fully functional devices.
Microprocessor adds flexibility to television control system. KAAgE KARSTAD. Electronics p. 132 (22 November 1979). Programmable TV prototype synthesizes channel frequencies; features can be added easily through software modifications.
Good bits swapped for bad in 64-kilobit E-PROM. VERNON G. McKENNY. Electronics p. 115 (13 March 1980). Ultraviolet-erasable memory has two redundant storage blocks to improve yield; two test modes spot cell threshold variations.
Millimeter-wave ICs spring from the lab. NARESHC. DEe and R~o MIYrRA. Microwaves p. 38 (October 1979). Millimeter-wave integrated circuits are elbowing their way into microwave systems with smaller, lower-power packages. Learn about the.transmission media and device performance.
Two-chip data-encryption unit supports multi-key systems. THOMASHUMPHREYand FRANKL. TOTH. Electronics p. 136 (17 January 1980). One version of the set operates at a data rate of 11,500 bits/second. PZC-MOS microcomputer family attains n-MOS performance. GEORGESIMMONS,RICH BURNLEY, CHUCK SEABORG and KEITH WINTER.Electronics p. 111 (22 November 1979). Double-polysilicon C-MOS process drops power consumption; CPU combines best attributes of 8085 and Z80. Isoplanar-S scales down for new heights in performance. DEVEREUX RICE. Electronics p. 137 (6 December 1979). Device scaling, the source of MOS's spurt to overtake bipolar, will also give lsoplanar processing a second wind. V-MOS outstrips bipolar for power. BRUCE LEBoss. Electronics p. 85 (22 November 1979). V for V-groove MOS logic may be out of the ballgame, but V for vertical power MOS FET is headed for victory• Very-high-speed silicon-on-eapphire integrated circuits. D. H. PHILLIPS,D. K. KINELL,D. G. GIRTONand L. KITAJEWSKI.Radio Electron. Eng. 49, (11) 581 (November 1979). Very-high-speed silicon-on-sapphire (s.o.s.) n-channel m.o.s.f.e.t.s have been fabricated which demonstrated a maximum oscillating frequency of approximately 6.4 GHz. These m.o.s.f.e.t.s--tost transistors on an integrated circuit-were fabricated with a process which can be used to fabricate high-speed integrated circuits• Spacecraft data processing requirements are evolving to indicate the need for very-high-speed devices which are capable of being integrated into large-scale circuits• Improvements in high-speed data processing communications systems are badly needed. Many of these applications will be met by very-high-speed s.o.s, integrated circuits.
Development system lays basis for fully integrated VLS! design center. CHARLES H. HOUSE. Electronics p. 143 (28 February 1980). Through a common file, all design and support engineers can share information on a product throughout its life cycle. Monofithic d-a converter operates on single supply. BRUCE AMAZEEN, PE'rER HOLLOWAY and Douo M~CER. Electronics p. 125 (28 February 1980). Microprocessor-compatible chip runs on +5 volts, includes reference, latches and amplifier. IC controls loudness of TV sound channel ARTHUR ERIKSON. Electronics p. 3E (31 January 1980). Integrated circuit for television sound circuitry boosts treble and bass at low volumes. LSi processor mirror high-performance minicomputer. MICHAEL DRUKE, RONALDGUSOWSKI,EDWARD BUCKLEY, DEAN CARSFAZRV,RO~F~ MARCH and RICHARD FEAVER. Electronics p. 119 (14 February 1980). Parallel-pipelines MOS chip machine matches Eclipse C/350's throughput; two optional ICs support floating-point and commercial extensions. Versatile LSI frequency synthesisor system. T. G. GILF_&
Electron. Components AppL 2, (2) 91 (February 1980). The HEF4750 and HEF4751* ICs described here form the basis for a simply constructed "universal", single-loop phase-locked frequency synthesiser suitable for professional and military equipment. Moreover, the ICs replace the large number of SSI and MSI devices currently used in frequency synthesisers,and therefore now make the use of frequency synthesisers in low-cost equipment a realisticproposition.