- Email: [email protected]
On the scaling of an ion-implanted silicon MESFET
World Abstracts on Microelectronics and Reliability Materials modification by MeV ion implantation. F, W. SARIS. Vacuum 39(2~), 173 (1989)~ A newly developed Van de Graaff-type mega-volt ion implantation facility is described. It is used for generation of up to several-hundred ~A mass-analysed ion beams in the energy range from 10keV to 2MeV. A wide range of ion species can be extracted using different types of ion sources in combination with a source exchange system. Technical details of the facility are described and include a high-pressure source load lock, integrated gas system, specially developed ion optics and injector system, mass-analysis at high voltage level and virtually no X-ray shielding necessary. Interesting new research topics in MeV implantation are briefly indicated. Mechanisms of damage formation and annealing, radiation enhanced diffusion, crystallization of amorphized layers and stopping and range theory are to be elucidated for MeV irradiation of semiconductors. In addition, MeV ion irradiation of metals, isolators and ceramic materials offers interesting possibilities to improve tribological properties, to synthesize new materials using ion implantation or ion mixing and to improve adhesion of thin films on solid substrates. Excimer laser-induced etching of semiconductors and metals. J.-L. PEYRE, D. RIVIERE,C. VANNIERand G. V1LLELA.Elect. Commun. 62(3/4), 222 (1988). As the feature sizes of microelectronic and optoelectronic components continue to decrease, there has been increased interest in developing new techniques for etching the materials used to construct these highly integrated components. Features of the new
203
techniques now being investigated include etching with neutral species, maskless processing, material selectivity, and reduced electrical damage. The mechanism of oxidation of thin Ni-Cr films. I. E. KLEIN, M. HERSHKOVICHand I. A. GOLDBERG. Microelect. J. 19(6), 17 (1989). Thin films of Ni-Cr were electron-beam-evaporated and subsequently annealed in air or in vacuum. Their depth profile was analysed by Auger electron spectroscopy. The film/substrate and the film/air interfaces were studied in order to shed light on contributing factors to adhesion and the mechanism of oxidation (termed resistor stabilisation in the microelectronics trade).
On the scaling of an ion-implanted silicon MESFET. S. N. CHATTOPADHYAVand B. B. PAL. Solid-St. Elect. 32(2), 119 (1989). An ion-implanted silicon MESFET is scaled to smaller sizes assuming constant field within the device. Ion implantation is a leading technology for VLSI and scaling is an important tool for device miniaturization. A onedimensional and fairly accurate analysis is carried out considering the effect of side walls in the space-charge region below the gate in the below pinch-off region. Different device parameters such as drain-source current, threshold voltage, time delay, frequency, d.c. power dissipation and switching energy are plotted and discussed with respect to scaling factor ~. The results show how the ion-implanted silicon MESFET device can be optimised with the aid of scaling factor for better device performance.
203
techniques now being investigated include etching with neutral species, maskless processing, material selectivity, and reduced electrical damage. The mechanism of oxidation of thin Ni-Cr films. I. E. KLEIN, M. HERSHKOVICHand I. A. GOLDBERG. Microelect. J. 19(6), 17 (1989). Thin films of Ni-Cr were electron-beam-evaporated and subsequently annealed in air or in vacuum. Their depth profile was analysed by Auger electron spectroscopy. The film/substrate and the film/air interfaces were studied in order to shed light on contributing factors to adhesion and the mechanism of oxidation (termed resistor stabilisation in the microelectronics trade).
On the scaling of an ion-implanted silicon MESFET. S. N. CHATTOPADHYAVand B. B. PAL. Solid-St. Elect. 32(2), 119 (1989). An ion-implanted silicon MESFET is scaled to smaller sizes assuming constant field within the device. Ion implantation is a leading technology for VLSI and scaling is an important tool for device miniaturization. A onedimensional and fairly accurate analysis is carried out considering the effect of side walls in the space-charge region below the gate in the below pinch-off region. Different device parameters such as drain-source current, threshold voltage, time delay, frequency, d.c. power dissipation and switching energy are plotted and discussed with respect to scaling factor ~. The results show how the ion-implanted silicon MESFET device can be optimised with the aid of scaling factor for better device performance.