- Email: [email protected]
Preparation of thin-film tunneling structures
Classified
abstracts
1406-1418 30
1406. Preparation
of thin-film tunneling structures.
(USA)
Vacuum deposition techniques were developed for the preparation of thin-film metal-insulator-metal structures, and the tunneling capabilities of these structures were explored by testing them for their V-I characteristics. The structures primarily investigated were AI-SiO-Al and Al-SiO-Au structures. A limited number of experiments were performed with Al-A&O,-Al samples. The report describes in detail the various methods used for forming the films. The thickness of the film was monitored using quartz crystal oscillators. The Al-A&O,-Al structures showed poor results when tested for their V-I characteristics. The breakdown strength of the samples was insufficient. Applied voltages of only a few tenths of a volt caused instant dielectric breakdown. Far better results were obtained with the structures in which SiO served as the insulator. The best structures displayed stable, tunneling-like V-I characteristics. Also the lifetime of the devices was improved. S Cabell and D Dobischek, Rep ECOM-2718, AD-638416, Aug 1966 (Army Electronics
Labs, Fort Monmouth,
New Jersey).
30 : 41 1407. Literature search on the deposition of layers of MO, W and Re by thermal decomposition of their carbonyls or reduction of their gaseous halides. (West Germany)
Pure coatings of MO, W or Re can be deposited from vapours of fluorides (W, Re) or chlorides (MO, W, Re) by reduction with H,. Details, conditions and results are discussed. M Kadner, Rep BMWF-FBK-66-09, April 1966 (Battelle Inst, Frankfurt
Main, Isotope
Nuclear
Technical
Div).
30 1408. Vacuum metallizmg arrangement for materials in sheet form. (USA) This device is used for successively vacuum metallizing sheet material
and consists of a chamber containing two magazines, one holding the sheets to be treated while the other holds the treated sheets. A number of frames capable of holding at least one sheet can be transferred from one magazine to the other. Vertical guides hold these frames so that the sheets lie horizontally one above the other. These guides consist of later31 members, on which the frames are positioned at a small distance from each other. The lateral members are capable of being displaced vertically by steps corresponding to the distance separating one member from the other. Glaverhel, 23rd May
US Patent 3,321,092, 1967, 1393.
Official Gaz US Patent Ofire,
838 (4), 30
(Great Britain) The chamber is evacuated by a sputter-ion pump and sequential, refrigerated sorption pumps. Both chamber and sump are alternately baked by strip heaters, which are shrouded to provide uniform temperature, and cooled by a blower. The sump has a series of vertically spaced, rectangular openings situated on opposite sides and adapted to take longitudinal magnets with a cooling space between. A platform in the sump holds the workpiece while a chevron baffle is mounted on its wall. A pressure of lO-1o torr may be obtained in about 16 hrs. 1409. All-metal
vacuum deposition
Varian Associates, Brit Patent 12th May 1967, 6.
apparatus.
1,065,564, Patent Abstr, 7 (19) part 6B,
of the bridge of the melted contact material was determined msec at 400 A for tungsten and 1.5 msec at 60 A for W-Ni. V S Potokm and V I Rakhovskiy, 330-334 (in Russian).
Zh Tekh Fiz, 37 (2), Feb 1967, 31
(Great Britain) The ion beam is produced from a solid material which forms the end surface of a cylindrical sputtering electrode. To overcome the intense heat requirements, a helical coil filament is mounted adjacent to and coaxial with this end surface and gas is supplied to this region at low pressure. The dc energized filament tends to concentrate the electrons in the region of the axis while an accelerating electrode draws the ions into an ion beam. UKAEA, Brit Patent 1,064,101, Patent Abstr, 7 (17) part C, 28th 1412. Ion source.
April 1967, 3. 32. NUCLEONICS Use of getter-ion pumps for pumping of linear electron See abstract number 1364.
32 : 21 accelerators.
32 1413. Multiple gas selector system for accelerator ion source. (USA) A means is described for remotely selecting one of four sources of gas for an rf ion source. The system consists of a specially designed five ball valve connecting one of the gas sources to the ion source via a mechanical leak assembly. The valve consists of a 3.8 cm stainless steel cube with a valve stem assembly attached to one face, the outlet port on the opposite face, and inlet ports on the other four faces. With 14 atm of helium applied to one of the input ports, the valve stem centred between stations, a leak rate of approximately 1Om’0 atm cc/set was measured. A E Evans et al, Rev Sri Instrum 38 (2), Feb 1967, 228-229. 33. GENERAL
PHYSICS
Liquid-helium-cooled
AND ELECTRONICS
platform for an electron microscope.
33 : 17 See abstract
number 1340. 33 : 21 1359. 33 1414. Ion bombardment device of the “Eolion” type. (France) The device described utilizes a Duoplasmatron source with a mass range between 1 and 40 and producing ions energy 5-30 kV. Beam currents of 5-10 mA are available with beam diameter 10 cm. The anode of the ion source is equipped with an expansion chamber whose geometry is designed to give radial distribution and as uniform a density as possible. R J Wamecke et al, Le Vide, 22 (127),Jan-Feb 1967,47-56 (in French). Contamination
from pumping systems.
See abstract number
1415. Some peculiarities of the motion homogeneous magnetic field. (USSR)
of charged
particles
Balzers Pat Lizenz-Anst, Brit Patent part 6 12th Ma,v 1967, 7.
31. EVACUATION 1411. Investigation vacuum. (USSR)
1,065,745,Patent Ab.ptr, 7 (19)
31 under
Investigations were carried out on switching-off ac currents up to 5,000 A at 1O-5 torr for tungsten and W-Ni metal
1416. Space charge waves in continuous drift electron monotonic change of cross-section. (USSR)
beams
33 with
Derived equations can be used for calculation of the noise effects in periodic electron beams. It is also shown that properties of the beam are strongly dependent on changes of the beam cross-section. A V Kulakov, Zh Tekh Fiz, 37 (4), April 1967, 650-658 1417. Some aspects
of ion beam focusing
(in Russian). 33 by linear stationary fields.
(USSR) Focusing of an ion beam by electric and magnetic fields, stationary in time, was investigated with regard to the problem of ion beam injection into a particle accelerator. Yu P Sivkov, Zh Tekh Fiz, 37 (4), April 1967, 659-665 (in Russian).
AND SEALING of the bridge period in current commutation
33 in a
Equations are derived for the motion of charged particles in cylindrical space with an axisymmetrical homogeneous magnetic field with arbitrary variations in time. L G Glikman et al, Zh Tekh Fiz, 37 (2), Feb 1967, 370-374 (in Russian).
30
(Great Britain) Substances are evaporated onto insulating substrates by an electron beam, the vapour source being positioned adjacent to the substrates. An electric field is maintained between source and bases so that electrons from the source are deflected away from the gases. A separate screen electrode of netting may be interposed between the source and bases across which deposition takes place. 1410. Vacuum deposition equipment.
as 2.5
1418. The development and fabrication spectrographic analysis. (USA)
of a boron absorption
33 tube for
Techniques for fabricating thin-walled boron tubes for use as hollowcathode discharge tubes in spectrographic applications, are described. The most successful specimens made contained 10 wt per cent of
abstracts
1406-1418 30
1406. Preparation
of thin-film tunneling structures.
(USA)
Vacuum deposition techniques were developed for the preparation of thin-film metal-insulator-metal structures, and the tunneling capabilities of these structures were explored by testing them for their V-I characteristics. The structures primarily investigated were AI-SiO-Al and Al-SiO-Au structures. A limited number of experiments were performed with Al-A&O,-Al samples. The report describes in detail the various methods used for forming the films. The thickness of the film was monitored using quartz crystal oscillators. The Al-A&O,-Al structures showed poor results when tested for their V-I characteristics. The breakdown strength of the samples was insufficient. Applied voltages of only a few tenths of a volt caused instant dielectric breakdown. Far better results were obtained with the structures in which SiO served as the insulator. The best structures displayed stable, tunneling-like V-I characteristics. Also the lifetime of the devices was improved. S Cabell and D Dobischek, Rep ECOM-2718, AD-638416, Aug 1966 (Army Electronics
Labs, Fort Monmouth,
New Jersey).
30 : 41 1407. Literature search on the deposition of layers of MO, W and Re by thermal decomposition of their carbonyls or reduction of their gaseous halides. (West Germany)
Pure coatings of MO, W or Re can be deposited from vapours of fluorides (W, Re) or chlorides (MO, W, Re) by reduction with H,. Details, conditions and results are discussed. M Kadner, Rep BMWF-FBK-66-09, April 1966 (Battelle Inst, Frankfurt
Main, Isotope
Nuclear
Technical
Div).
30 1408. Vacuum metallizmg arrangement for materials in sheet form. (USA) This device is used for successively vacuum metallizing sheet material
and consists of a chamber containing two magazines, one holding the sheets to be treated while the other holds the treated sheets. A number of frames capable of holding at least one sheet can be transferred from one magazine to the other. Vertical guides hold these frames so that the sheets lie horizontally one above the other. These guides consist of later31 members, on which the frames are positioned at a small distance from each other. The lateral members are capable of being displaced vertically by steps corresponding to the distance separating one member from the other. Glaverhel, 23rd May
US Patent 3,321,092, 1967, 1393.
Official Gaz US Patent Ofire,
838 (4), 30
(Great Britain) The chamber is evacuated by a sputter-ion pump and sequential, refrigerated sorption pumps. Both chamber and sump are alternately baked by strip heaters, which are shrouded to provide uniform temperature, and cooled by a blower. The sump has a series of vertically spaced, rectangular openings situated on opposite sides and adapted to take longitudinal magnets with a cooling space between. A platform in the sump holds the workpiece while a chevron baffle is mounted on its wall. A pressure of lO-1o torr may be obtained in about 16 hrs. 1409. All-metal
vacuum deposition
Varian Associates, Brit Patent 12th May 1967, 6.
apparatus.
1,065,564, Patent Abstr, 7 (19) part 6B,
of the bridge of the melted contact material was determined msec at 400 A for tungsten and 1.5 msec at 60 A for W-Ni. V S Potokm and V I Rakhovskiy, 330-334 (in Russian).
Zh Tekh Fiz, 37 (2), Feb 1967, 31
(Great Britain) The ion beam is produced from a solid material which forms the end surface of a cylindrical sputtering electrode. To overcome the intense heat requirements, a helical coil filament is mounted adjacent to and coaxial with this end surface and gas is supplied to this region at low pressure. The dc energized filament tends to concentrate the electrons in the region of the axis while an accelerating electrode draws the ions into an ion beam. UKAEA, Brit Patent 1,064,101, Patent Abstr, 7 (17) part C, 28th 1412. Ion source.
April 1967, 3. 32. NUCLEONICS Use of getter-ion pumps for pumping of linear electron See abstract number 1364.
32 : 21 accelerators.
32 1413. Multiple gas selector system for accelerator ion source. (USA) A means is described for remotely selecting one of four sources of gas for an rf ion source. The system consists of a specially designed five ball valve connecting one of the gas sources to the ion source via a mechanical leak assembly. The valve consists of a 3.8 cm stainless steel cube with a valve stem assembly attached to one face, the outlet port on the opposite face, and inlet ports on the other four faces. With 14 atm of helium applied to one of the input ports, the valve stem centred between stations, a leak rate of approximately 1Om’0 atm cc/set was measured. A E Evans et al, Rev Sri Instrum 38 (2), Feb 1967, 228-229. 33. GENERAL
PHYSICS
Liquid-helium-cooled
AND ELECTRONICS
platform for an electron microscope.
33 : 17 See abstract
number 1340. 33 : 21 1359. 33 1414. Ion bombardment device of the “Eolion” type. (France) The device described utilizes a Duoplasmatron source with a mass range between 1 and 40 and producing ions energy 5-30 kV. Beam currents of 5-10 mA are available with beam diameter 10 cm. The anode of the ion source is equipped with an expansion chamber whose geometry is designed to give radial distribution and as uniform a density as possible. R J Wamecke et al, Le Vide, 22 (127),Jan-Feb 1967,47-56 (in French). Contamination
from pumping systems.
See abstract number
1415. Some peculiarities of the motion homogeneous magnetic field. (USSR)
of charged
particles
Balzers Pat Lizenz-Anst, Brit Patent part 6 12th Ma,v 1967, 7.
31. EVACUATION 1411. Investigation vacuum. (USSR)
1,065,745,Patent Ab.ptr, 7 (19)
31 under
Investigations were carried out on switching-off ac currents up to 5,000 A at 1O-5 torr for tungsten and W-Ni metal
1416. Space charge waves in continuous drift electron monotonic change of cross-section. (USSR)
beams
33 with
Derived equations can be used for calculation of the noise effects in periodic electron beams. It is also shown that properties of the beam are strongly dependent on changes of the beam cross-section. A V Kulakov, Zh Tekh Fiz, 37 (4), April 1967, 650-658 1417. Some aspects
of ion beam focusing
(in Russian). 33 by linear stationary fields.
(USSR) Focusing of an ion beam by electric and magnetic fields, stationary in time, was investigated with regard to the problem of ion beam injection into a particle accelerator. Yu P Sivkov, Zh Tekh Fiz, 37 (4), April 1967, 659-665 (in Russian).
AND SEALING of the bridge period in current commutation
33 in a
Equations are derived for the motion of charged particles in cylindrical space with an axisymmetrical homogeneous magnetic field with arbitrary variations in time. L G Glikman et al, Zh Tekh Fiz, 37 (2), Feb 1967, 370-374 (in Russian).
30
(Great Britain) Substances are evaporated onto insulating substrates by an electron beam, the vapour source being positioned adjacent to the substrates. An electric field is maintained between source and bases so that electrons from the source are deflected away from the gases. A separate screen electrode of netting may be interposed between the source and bases across which deposition takes place. 1410. Vacuum deposition equipment.
as 2.5
1418. The development and fabrication spectrographic analysis. (USA)
of a boron absorption
33 tube for
Techniques for fabricating thin-walled boron tubes for use as hollowcathode discharge tubes in spectrographic applications, are described. The most successful specimens made contained 10 wt per cent of