- Email: [email protected]
SiC matches sapphire-based blue LEDs
Technology: Optoeiectronics
Technology: M icroelectronics
Nichia loses law-suit against Cree; while Rohm withdraws versus Nichia
Oriol Inc (Santa Clara, CA, USA; Tel: +1-4o8-327-994o) has started manufacturing and shipping blue, blue-green, green and white highbrightness LEDs on sapphire substrates (using two EMCORE SpectraBlue GaN MOCVD tools]. It is also planning to expand elsewhere in California, offering die or packaged blue HB-LEDs. Next will be GaN VCSELs and GaN-based electronic devices.
In May the Tokyo District Court dismissed the lawsuit filed in
Patent No. 5,686,738 "Highly Insulating Monocrystalline
certain Nichia parts infringed
December 1999 by Nichia Corp against Sumitomo Corp - one of
Gallium Nitride Thin Films"
that this came after the ITC
(relating to devices, such as LEDs, made using a GaN-based
issued an order that would have allowed it to uncover
buffer technology) by import-
evidence of anti-trust and conspiracy by Rohm, contending
Arima Optoelectronics has signed a deal to supply a DVD drive manufacturer with lasers. It installed equipment in April with an initial capacity to package tm a month. It also plans to move into laser wafer production in Q3/2ooi, initially only 63o-65o nm red lasers under OEM contract but then its own-brand products (after moving into ] :;oo-~5oo nm lasers and up-stream wafer production). With eight MOCVD systems, current capacity is 80m red/orange/yellow and tom blue/green LEDs per month. Arima's sales were NT$200m in 2000. It predicts it wilt quadruple that in 200; with the addition of lasers. The Uniroyal Optoelectronics (UOE) division of Uniroyal Technology Corp (Sarasota, FL, USA) has named Advanced Semiconductor Process Integration Co Ltd as its distributor for high-brightness LED chips in South Korea. UOE has achieved minimum brightness output of 1/4o-2oo mcd from its 618 and 626 nm red AIInGaP/GaAs HB-LEDs (which have an integrated Bragg reflector).
the distributors in Japan for Cre¢ Iflc (Durham, NC, USA) alleging that the device struc-
22
ing, selling and offering for sale in the US devices made from
ture used in Cree's standardbrightness blue LEDs infringed
1TC jurisdiction.
University in November 1997 and licensed to Cree Lighting
Cree subsidiary C t ~ Ltghtillg C o m p a n y (Goleta, CA, USA)
This "eliminates concern over the availability o f violet a n d blue laser diodes in the US"
Company.
then filed a lawsuit in the US
says Noboru Tazaki, managing
* Rohm Co Ltd (Kyoto,Japan) has withdrawn its complaint
District Court for the Northern District of California alleging
director and genera/manager
that N l c h i a C o r p and Nichia
before the US International
America Corp are infringing US
Trade Commission alleging that
.
.
.
.
.
.
.
SiC matches sapphirebased blue LEDs Cree Inc (Durham, NC, USA) has begun volume production of its n e w MegaBright SiCbased blue LED, w h i c h has a
that Rohm had fabricated a domestic industry to obtain
GaN Films.The patent was issued to co-plaintiff Boston
Japanese Patent No. 2,918,139.
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of Nichia's Optoelectronics Products Division. .
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Toyoda to manufacture 410 nm GaN laser Toyoda Gosei Co Ltd (Nagoya,
Isamu Akasaki of Meijo
Japan) has developed manufac-
University (Professor Emeritus
turing technology for a short-
of Nagoya University) and
wavelength (410 nm) GaN bluish-purple laser (samp/ing
Assistant Professor Hiroshi Amano of Meijo University.The project was funded in part by
this Autumn). It has a 3 mW output and an estimated life of
Japan Science and Technology
temperature.The new laser is
Corp, one of the key organisations for implementing the poli-
LEDs - launched last October -
based on the development of an optical wave-guiding structure
cies of Japan's Science and Technology Agency.
typical brightness o f 10 m W (double its existing UltraBright
over 5,000 hours c w at room
and matching the highest-
and a packaging technology
brightness sapphire-based devices). Over the last three
that excels in heat radiation.
years, Cree has increased the
Basic research (costing about
semiconductor crystallisation,
brightness of its LEDs lO-fold.
Y7OOm) was carried out over
which features high-quality multi-quantum well layers.
seven years under Professor
Using GaN, Toyoda Gosei developed the technology for stable
New applications targeted include full-colour outdoor video displays, backaighting of full-colour PDAs, automotive
Record 16.4%-efficient CdTe PV cell
baddighting, and solid-state illumination. * Cree has also announced the election to its Board of Directors of Dr Robert J Potter (president
* UTC's fiscal 0.2/2001 sates (to end-March) were US$15Am (dowu ;7% on a year ago but up 11% for the CompoLmd Semiconductor and Optoelect~onics segment).
two US patents. Nichia claims
and CEO o f technology consul-
The National Renew-~ble Energy
make CdTe thin-film panels and
Laborato~ (Golden, CO, USA)
could adopt the process ff they
has broken the nine-year effici-
expand. CdTe yields higher
ency record of 15.8% for a cad-
power per area at a lower price.
mium telluride solar PV cell by
NREL works within the National
tancy R J Potter Company, former group vp of Nortel Networks
using n e w materials that inter-
Center for Photovoltaics (found-
act chemically with the CdTe to
ed at NREL by the DOE in 1996)
and current board member of
improve adhesion, light collec-
Molex Inc, a manufacturer of
tion, and electronic properties.
together with the National CdTe Team (scientist from university
interconnection products).
Two of the largest US PV plants
and industry) and Sandia Labs.
IlI-Vs REVIEW THE ADVANCED SEMICONDUCTOR MAGAZINE VOL ~ - NO 5 "June/July aool
Technology: M icroelectronics
Nichia loses law-suit against Cree; while Rohm withdraws versus Nichia
Oriol Inc (Santa Clara, CA, USA; Tel: +1-4o8-327-994o) has started manufacturing and shipping blue, blue-green, green and white highbrightness LEDs on sapphire substrates (using two EMCORE SpectraBlue GaN MOCVD tools]. It is also planning to expand elsewhere in California, offering die or packaged blue HB-LEDs. Next will be GaN VCSELs and GaN-based electronic devices.
In May the Tokyo District Court dismissed the lawsuit filed in
Patent No. 5,686,738 "Highly Insulating Monocrystalline
certain Nichia parts infringed
December 1999 by Nichia Corp against Sumitomo Corp - one of
Gallium Nitride Thin Films"
that this came after the ITC
(relating to devices, such as LEDs, made using a GaN-based
issued an order that would have allowed it to uncover
buffer technology) by import-
evidence of anti-trust and conspiracy by Rohm, contending
Arima Optoelectronics has signed a deal to supply a DVD drive manufacturer with lasers. It installed equipment in April with an initial capacity to package tm a month. It also plans to move into laser wafer production in Q3/2ooi, initially only 63o-65o nm red lasers under OEM contract but then its own-brand products (after moving into ] :;oo-~5oo nm lasers and up-stream wafer production). With eight MOCVD systems, current capacity is 80m red/orange/yellow and tom blue/green LEDs per month. Arima's sales were NT$200m in 2000. It predicts it wilt quadruple that in 200; with the addition of lasers. The Uniroyal Optoelectronics (UOE) division of Uniroyal Technology Corp (Sarasota, FL, USA) has named Advanced Semiconductor Process Integration Co Ltd as its distributor for high-brightness LED chips in South Korea. UOE has achieved minimum brightness output of 1/4o-2oo mcd from its 618 and 626 nm red AIInGaP/GaAs HB-LEDs (which have an integrated Bragg reflector).
the distributors in Japan for Cre¢ Iflc (Durham, NC, USA) alleging that the device struc-
22
ing, selling and offering for sale in the US devices made from
ture used in Cree's standardbrightness blue LEDs infringed
1TC jurisdiction.
University in November 1997 and licensed to Cree Lighting
Cree subsidiary C t ~ Ltghtillg C o m p a n y (Goleta, CA, USA)
This "eliminates concern over the availability o f violet a n d blue laser diodes in the US"
Company.
then filed a lawsuit in the US
says Noboru Tazaki, managing
* Rohm Co Ltd (Kyoto,Japan) has withdrawn its complaint
District Court for the Northern District of California alleging
director and genera/manager
that N l c h i a C o r p and Nichia
before the US International
America Corp are infringing US
Trade Commission alleging that
.
.
.
.
.
.
.
SiC matches sapphirebased blue LEDs Cree Inc (Durham, NC, USA) has begun volume production of its n e w MegaBright SiCbased blue LED, w h i c h has a
that Rohm had fabricated a domestic industry to obtain
GaN Films.The patent was issued to co-plaintiff Boston
Japanese Patent No. 2,918,139.
!
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
of Nichia's Optoelectronics Products Division. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
Toyoda to manufacture 410 nm GaN laser Toyoda Gosei Co Ltd (Nagoya,
Isamu Akasaki of Meijo
Japan) has developed manufac-
University (Professor Emeritus
turing technology for a short-
of Nagoya University) and
wavelength (410 nm) GaN bluish-purple laser (samp/ing
Assistant Professor Hiroshi Amano of Meijo University.The project was funded in part by
this Autumn). It has a 3 mW output and an estimated life of
Japan Science and Technology
temperature.The new laser is
Corp, one of the key organisations for implementing the poli-
LEDs - launched last October -
based on the development of an optical wave-guiding structure
cies of Japan's Science and Technology Agency.
typical brightness o f 10 m W (double its existing UltraBright
over 5,000 hours c w at room
and matching the highest-
and a packaging technology
brightness sapphire-based devices). Over the last three
that excels in heat radiation.
years, Cree has increased the
Basic research (costing about
semiconductor crystallisation,
brightness of its LEDs lO-fold.
Y7OOm) was carried out over
which features high-quality multi-quantum well layers.
seven years under Professor
Using GaN, Toyoda Gosei developed the technology for stable
New applications targeted include full-colour outdoor video displays, backaighting of full-colour PDAs, automotive
Record 16.4%-efficient CdTe PV cell
baddighting, and solid-state illumination. * Cree has also announced the election to its Board of Directors of Dr Robert J Potter (president
* UTC's fiscal 0.2/2001 sates (to end-March) were US$15Am (dowu ;7% on a year ago but up 11% for the CompoLmd Semiconductor and Optoelect~onics segment).
two US patents. Nichia claims
and CEO o f technology consul-
The National Renew-~ble Energy
make CdTe thin-film panels and
Laborato~ (Golden, CO, USA)
could adopt the process ff they
has broken the nine-year effici-
expand. CdTe yields higher
ency record of 15.8% for a cad-
power per area at a lower price.
mium telluride solar PV cell by
NREL works within the National
tancy R J Potter Company, former group vp of Nortel Networks
using n e w materials that inter-
Center for Photovoltaics (found-
act chemically with the CdTe to
ed at NREL by the DOE in 1996)
and current board member of
improve adhesion, light collec-
Molex Inc, a manufacturer of
tion, and electronic properties.
together with the National CdTe Team (scientist from university
interconnection products).
Two of the largest US PV plants
and industry) and Sandia Labs.
IlI-Vs REVIEW THE ADVANCED SEMICONDUCTOR MAGAZINE VOL ~ - NO 5 "June/July aool