Sixth international conference on internal friction and ultrasonic attenuation in solids

CALENDAR OF SOLID STATE EVENTS analyzing both the composition and the structure of matter. Generally, the ion beam energies of interest will range from a few tens of keV upwards. Primary emphasis will be placed on new or improved techniques of analysis and on advances in the science and technology on which the techniques are based. Applications of established techniques to new and unusual materials or to especially difficult analysis problems will however also be considered. Contributed papers may be submitted on such topics as: energy loss and straggling, backscattering or forward scattering analyses, light element profiling, non-resonant nuclear reactions, resonant nuclear reactions, ion induced X-rays, channeling studies of crystal lattice impurities and defects, applications of ion beam techniques in combination with other techniques, preparation and use of target standards, and experimental equipment. Papers accepted for presentation at the Conference will be published in the Conference Proceedings. Abstracts of contributed papers must be received by the Conference Chairman no later than March 4, 1977. Information: Eligius A. Wolicki, Radiation Technology Division, Naval Research Laboratory, Washington, D.C. 20375, U.S.A. 4 - 7 July 1977 Sixth International Conference on Internal Friction and Ultrasonic Attenuation in Solids, Tokyo, Japan. The purpose of the conference is to further the science concerned with the dissipation of energy mechanical vibrations in Crystalline and amorphous solids over the entire range of attainable frequencies. Phenomena and mechanisms of dissipation of energy involving electrons, phonons, phase transitions or transformations, magnetic effects, point defects, impurity atoms, dislocations, grain boundaries are main topics of the Conference. Besides, some related fields such as physics of phonon echoes, physics of surface waves, physics of acoustic emission, basic sciences of nondestructive testing, and so on will be included.

Information: Prof. R.R. Hasiguit, Faculty of Engineering, Science University of Tokyo, Kagurazaka, Shinjuku-ku, Tokyo 162, Japan.

Vol. ~1, No. 5

6 - 8 July 1977 International Conference on Hot Electrons in Semiconductors, Denton, Texas, U.S.A. The purpose of the conference is to bring together scientists interested in all aspects of hot or nonequilibrium carriers in semiconductors. The goal of the conference is to provide a forum in which topics of current interest and importance can be discussed. Invited and contributed papers will be presented in the following areas:

(1) bulk transport phenomena, (2) surface and interface transport phenomena, (3) device behavior phenomena, and (4) photo-excitation phenomena (particularly with lasers). The exact topics of the sessions, the invited speakers, and the contributed papers will be decided by a committee composed of international scientists working in the area of hot or non-equilibrium electrons in semiconductors. Invited speakers will be selected to cover the most interesting developments. Contributed papers reporting significant new results will also be considered. Abstracts must be received by March 1, 1977 and should conform to rules as found in the Bulletin of the American Physical Society. Conference proceedings will be published as a special issue of Solid State Electronics, an international journal. This conference is being sponsored by the Office of Naval Research, The American Physical Society, and North Texas State University. Information: Dr. David G. Seiler, Department of Physics, North Texas State University, Denton, Texas 76203, U.S.A. 15-19 Au~ust 1977

International Conference on the Physics o f Transition Metals. This major conference will be held at the Department of Physics of the University of Toronto, Toronto, Canada. The program will consist of plenary morning sessions of contributed talks. In addition there will be panel discussions on several controversial topics. The invited speakers will be determined with the aid of an