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STM observation of growth interruption effect of MBE growth
A433 Surface Science 287/288 (1993) 1004-1012 North-Holland
Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy Masaru Tsukada a, Katsuyoshi Kobayashi a, Nobuyuki Isshiki b, Hiroyuki Kageshima c, Toshihiro Uchiyama d, Satoshi Watanabe e and Tatsuo Schimizu a a Department of Physics, Faculty of Science, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113, Japan b Institute for Knowledge and Intelligence Science, Kao Corporation, Bunka 2-1-3, Sumida-ku, Tokyo 131, Japan c NTT LSI Laboratories, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa 243-01, Japan d Matsushita Research Institute Tokyo, Inc., Higashimita 3-10-1, Tama-ku, Kawasaki, Kanagawa 214, Japan eAono Atomcraft Project, ERATO, Research Development Corporation, Kaga 1-7-13, Itabashi-ku, Tokyo 173, Japan Received 4 September 1992; accepted for publication 19 November 1992 Theoretical simulation based on the first-principles local density functional approximation (LDA) calculation reveals the mechanism of STM as well as significant effects of microscopic states of the tip on experimental data. Moreover, various exotic properties of clean or chemisorbed surfaces can be explained with the theory of STM/STS. How the tip influences images of STM is discussed by case studies with a numerical simulation for Si(100) dimer rows and step structures and Si(lll)x/3 × v ~ - A g and Ag(ll0)-O chemisorption surfaces.
Surface Science 287/288 (1993) 1013-1018 North-Holland
STM observation of growth interruption effect of MBE growth T. Ide, A. Yamashita and T. Mizutani 1 Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, lbaraki 305, Japan Received 31 August 1992; accepted for publication 19 November 1992 The evolution of the surface configuration of GaAs(001)2 X 4 upon annealing after molecular-beam-epitaxy growth interruption was examined by scanning tunneling microscopy. Soon after interruption, the surface exhibits many two-dimensional islands and a ragged step configuration. Continuous annealing after growth interruption causes changes in the surface topography without changing the reconstruction. At first the surface becomes smooth by decreasing the number of islands and smoothing the step shapes. During annealing the size of the islands increases by coalescing. Further successive annealing causes step bunching. The decrease in the number of islands and smoothing of step shapes, which are found to be the effects of the growth interruption, are explained by the shortening of the total step length.
Surface Science 287/288 (1993) 1019-1024 North-Holland
Fundamental phenomena in heteroepitaxial growth studied by scanning tunneling microscopy H. Sirringhaus, N. Onda, E. Miiller-Gubler, P. Miiller, St. Z e h n d e r and H. yon K~inel Laboratorium fiir Festk6rperphysik, Eidgen6ssische Technische Hochschule Ziirich, CH-8093 Ziirich, Switzerland Received 27 August 1992; accepted for publication 19 November 1992 We have used scanning tunneling microscopy to study the heteroepitaxial growth of transition metal silicides on Si by molecular beam epitaxy, in particular the temperature-induced phase transition from pseudomorphic FeSi 2 to fl-FeSi2/Si(lll). Prior to the transformation the cubic silicide films become laterally inhomogeneous which can be explained by a local distortion towards the orthorhombic fl-FeSi 2 phase. On stoichiometrically grown samples fl-FeSi 2 nucleates in a (101)-orientation as in solid phase epitaxy. From slightly Fe-rich initial deposits high-quality epitaxial fl-FeSi 2 with a (001)-orientation and a grain size of several/~m could be grown. The elastic strain is relaxed by a dense array of buried misfit dislocations.
Novel features of surface electronic structure revealed by the theoretical simulation of scanning tunneling microscopy/spectroscopy Masaru Tsukada a, Katsuyoshi Kobayashi a, Nobuyuki Isshiki b, Hiroyuki Kageshima c, Toshihiro Uchiyama d, Satoshi Watanabe e and Tatsuo Schimizu a a Department of Physics, Faculty of Science, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113, Japan b Institute for Knowledge and Intelligence Science, Kao Corporation, Bunka 2-1-3, Sumida-ku, Tokyo 131, Japan c NTT LSI Laboratories, Morinosato-Wakamiya 3-1, Atsugi, Kanagawa 243-01, Japan d Matsushita Research Institute Tokyo, Inc., Higashimita 3-10-1, Tama-ku, Kawasaki, Kanagawa 214, Japan eAono Atomcraft Project, ERATO, Research Development Corporation, Kaga 1-7-13, Itabashi-ku, Tokyo 173, Japan Received 4 September 1992; accepted for publication 19 November 1992 Theoretical simulation based on the first-principles local density functional approximation (LDA) calculation reveals the mechanism of STM as well as significant effects of microscopic states of the tip on experimental data. Moreover, various exotic properties of clean or chemisorbed surfaces can be explained with the theory of STM/STS. How the tip influences images of STM is discussed by case studies with a numerical simulation for Si(100) dimer rows and step structures and Si(lll)x/3 × v ~ - A g and Ag(ll0)-O chemisorption surfaces.
Surface Science 287/288 (1993) 1013-1018 North-Holland
STM observation of growth interruption effect of MBE growth T. Ide, A. Yamashita and T. Mizutani 1 Microelectronics Research Laboratories, NEC Corporation, 34, Miyukigaoka, Tsukuba, lbaraki 305, Japan Received 31 August 1992; accepted for publication 19 November 1992 The evolution of the surface configuration of GaAs(001)2 X 4 upon annealing after molecular-beam-epitaxy growth interruption was examined by scanning tunneling microscopy. Soon after interruption, the surface exhibits many two-dimensional islands and a ragged step configuration. Continuous annealing after growth interruption causes changes in the surface topography without changing the reconstruction. At first the surface becomes smooth by decreasing the number of islands and smoothing the step shapes. During annealing the size of the islands increases by coalescing. Further successive annealing causes step bunching. The decrease in the number of islands and smoothing of step shapes, which are found to be the effects of the growth interruption, are explained by the shortening of the total step length.
Surface Science 287/288 (1993) 1019-1024 North-Holland
Fundamental phenomena in heteroepitaxial growth studied by scanning tunneling microscopy H. Sirringhaus, N. Onda, E. Miiller-Gubler, P. Miiller, St. Z e h n d e r and H. yon K~inel Laboratorium fiir Festk6rperphysik, Eidgen6ssische Technische Hochschule Ziirich, CH-8093 Ziirich, Switzerland Received 27 August 1992; accepted for publication 19 November 1992 We have used scanning tunneling microscopy to study the heteroepitaxial growth of transition metal silicides on Si by molecular beam epitaxy, in particular the temperature-induced phase transition from pseudomorphic FeSi 2 to fl-FeSi2/Si(lll). Prior to the transformation the cubic silicide films become laterally inhomogeneous which can be explained by a local distortion towards the orthorhombic fl-FeSi 2 phase. On stoichiometrically grown samples fl-FeSi 2 nucleates in a (101)-orientation as in solid phase epitaxy. From slightly Fe-rich initial deposits high-quality epitaxial fl-FeSi 2 with a (001)-orientation and a grain size of several/~m could be grown. The elastic strain is relaxed by a dense array of buried misfit dislocations.