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Testing for MOS IC failure modes
588
World Abstracts on Mlcroelectronlcs and Reliability
mental and operational stresses and to induced degradation mechanisms On the basis of these results, manufacturers have improved the reliability of later generations of modules through changes in design, material selection, and manufacturing controls This paper summarizes field experience, describes key failure modes, and evaluates industry progress in addressing such problems
Reliability inspection of electronic components from the point of view of the users. F BRADA,CS FOZO, I GOBLOS Ele~ tro~ompollem S~l Technol 9, 243 (1982) Great attention should be paid to the rehabthty of electronic components, since reliable equipment cannot be constructed without reliable parts Consequently, the satisfactory rehablhty level of components is important in the economic consideration of the component-manufacturers and of the users, 1 e the equipment-manufacturers, as well It IS important for the component-manufacturer, to ensure that their products will have a good market, and it is Important for the user because he must produce reliable equipment In the following paper the actr, mes performed to achieve these two objectl',es will be discussed In the first part a brief summary will be given of the evaluation process, whilst in the second part illustrative examples of testing procedures ,~lll be given Reliability of LED's; are the accelerated ageing tests reliable GEORGE FERENCZI Electrocomponent Set Technol 9, 239 11982) The mechanisms, leading to light output degradanon of LED's were studied using a number of different techtuques, e g deep level spectroscopy, electrolumlncscence, minority carrier llle time measurements Several processes v~ere revealed having different temperature and stress current dependence Using these data extrapolations based on accelerated ageing test results are reexammed Accelerated stress testing of terrestrial solar cells. J W LATHROP. D C HAWKINS,J L PRINCE and H A WALKER IEEE Trans Rehab R-31 (3), 258 (1982) The development of an accelerated test schedule for terrestrial solar cells is described This schedule, based on anticipated failure modes deduced from a consideration of IC failure mechanisms, involves bins-temperature testing, humidity testing (Including both 85-85 and pressure cooker stress), and thermal-cycle thermal-shock testing Results are described for 12 &fferent unencapsulated cell types Both gradual electrical degradation and sudden catastrophic mechanical change were observed These effects can be used to discriminate between cell types and technologies relative to their reliability attrlbute~ Consideration IS given to identifying laboratory failure mode~ which might lead to severe degradation in the field through second quadrant operation Test results indicate that the ablhty of most cell types to withstand accelerated stress testing depends more on the manufacturer's design, processing, and workmanship than on the particular metalhzatlon system Prehmmary tests comparing accelerated test results on encapsulated and unencapsulated cells are described Photovoltalc arra) reliability optimization. RONALD G ROSS, JR, IEEE Trans Rehab R-31 (3), 246 (1982) Several statistical reliability studies have been conducted in areas of photovoltalc component design covering cell failure, raterconnect fatigue, glass breakage and electrical Insulation breakdox~n This paper integrates the results from these studies and draws general conclusions relative to optimal rehabihty features for modules The analysis is based on deslgnmg for specified low levels of component failures and then controlling the degrading effects of the failures through the use of fault tolerant circuitry and module replacement Means of selecting the cost-optimal level of component failures, clrcmt redundancy, and module replacement are described
Electrostatic failure in semiconductors. BURTON A U~GER Semuondu~IOl Piodn, 22 (September 19821 Three electrostatic discharge [allure models, the human body model, the charged device model, and the field induced model, are compared m terms of damage threshold, discharge parameters, failure mechanisms and device testing Component availability. CLIH~ORD W MARSHALL ILLL Trans Rehah R-31 (2), 216 11982) Rehabthty can reasonably be defined for an individual component Availab,hty depends intrinsically on the service discipline of a system so that a component can not be assigned a measure of a,~allabiht) exclusive of the system in which it operates To obtain a general formulation the structural details of the system are omitted and the action of the system is represented by the waiting time distribution of the component service queue Two approaches to the definition of component avallablllt} are given Ill An integro-dlfferentlal equation deftnltmn in terms of the service waiting time distribution (2) A methodological definition for component avaflablhty m terms of the details of a combinatorial queue model Rehability of flip chip solder bump joints. V K NAGESH Pt o~ IEEE Rehab Phy~ Stmp, 611982) Increasmg complexitles of the IC chips imply increasing demands on the chip packaging Flip chip solder bump joints seem to provide the most logical solution for VLSI packaging Thermal fatigue cycling studies of the joints were done and found to be extremely rehable with very low failure rates Different factors affecting the fatigue lr, es were dnalyzed Mlcrostructural a~pects of failure in the flip chip solder bump joints ~ere studied usmg fracture surface and cross-sectional analyses I~ormatlon and growth of Cu Sn mtermetalhcs and their effect on the failure of flip chip solder bump joints were studied
Bias humidl D performance and failure mechanisms of nonhermetic aluminum SICs in an environment contaminated w,th CI 2, M IANNUZZI Prot IEEE Rehab Phys Syrup, 16 I1982) The ageing of alummum metalllzed silicon mtegrated circmt test vehicles ~bare, SIN CAPS only, RTV only, SIN C A P S + R T V ) at 85°C, 85",, RH and l p p m Cl 2 for 2664 hours ~as carried out with either + 10V, - 1 0 V , or 0V d c bias imposed on the samples The leakage currents for the encapsulated samples increased slowly over long periods of time in chlorine Failures were observed in the unencapsulated groups Testmg for MOS IC failure modes DAVID G EDWARDS IEEE Trails Rehab R-31 (1), 9 (1982) The failure modes of MOS technology are described with emphasis on recent trends in LSI Failures are classified mto short, open, degradation, and soft recoverable errors The following failure modes are co,,ered oxide breakdown caused by static discharge and time-dependent effects, metalhzatlon failures caused by electromlgratlon or corrosion, threshold voltage shifts caused by lomc contamination, surface-charge ~preadlng, and the hot-electron effect Special attention is paid to the increasingly important alpha-particle-Induced soft errors Methods by which each of the failure modes can be detected are discussed and tabulated, together with the information on acceleration [actors necessary for designing hfe and screen tests Of the fadure modes cited, threshold shifts due to hot electrons, and soft errors caused by lOmzlng radmtaon are likely to be increasingly important as VLSI technology progresse', Degradation of thin-gate MOSFETs under high electric field stress. H ISHIUCHI, Y MATSUMOTO, T MOCHIZUKL S SAWADA and O OZAWA Proc IEEE Rehab Phys Syrup, 228 11982) A new type of instability of threshold voltage and transconductance in MOSFET's under high electric field
World Abstracts on Mlcroelectronlcs and Reliability
mental and operational stresses and to induced degradation mechanisms On the basis of these results, manufacturers have improved the reliability of later generations of modules through changes in design, material selection, and manufacturing controls This paper summarizes field experience, describes key failure modes, and evaluates industry progress in addressing such problems
Reliability inspection of electronic components from the point of view of the users. F BRADA,CS FOZO, I GOBLOS Ele~ tro~ompollem S~l Technol 9, 243 (1982) Great attention should be paid to the rehabthty of electronic components, since reliable equipment cannot be constructed without reliable parts Consequently, the satisfactory rehablhty level of components is important in the economic consideration of the component-manufacturers and of the users, 1 e the equipment-manufacturers, as well It IS important for the component-manufacturer, to ensure that their products will have a good market, and it is Important for the user because he must produce reliable equipment In the following paper the actr, mes performed to achieve these two objectl',es will be discussed In the first part a brief summary will be given of the evaluation process, whilst in the second part illustrative examples of testing procedures ,~lll be given Reliability of LED's; are the accelerated ageing tests reliable GEORGE FERENCZI Electrocomponent Set Technol 9, 239 11982) The mechanisms, leading to light output degradanon of LED's were studied using a number of different techtuques, e g deep level spectroscopy, electrolumlncscence, minority carrier llle time measurements Several processes v~ere revealed having different temperature and stress current dependence Using these data extrapolations based on accelerated ageing test results are reexammed Accelerated stress testing of terrestrial solar cells. J W LATHROP. D C HAWKINS,J L PRINCE and H A WALKER IEEE Trans Rehab R-31 (3), 258 (1982) The development of an accelerated test schedule for terrestrial solar cells is described This schedule, based on anticipated failure modes deduced from a consideration of IC failure mechanisms, involves bins-temperature testing, humidity testing (Including both 85-85 and pressure cooker stress), and thermal-cycle thermal-shock testing Results are described for 12 &fferent unencapsulated cell types Both gradual electrical degradation and sudden catastrophic mechanical change were observed These effects can be used to discriminate between cell types and technologies relative to their reliability attrlbute~ Consideration IS given to identifying laboratory failure mode~ which might lead to severe degradation in the field through second quadrant operation Test results indicate that the ablhty of most cell types to withstand accelerated stress testing depends more on the manufacturer's design, processing, and workmanship than on the particular metalhzatlon system Prehmmary tests comparing accelerated test results on encapsulated and unencapsulated cells are described Photovoltalc arra) reliability optimization. RONALD G ROSS, JR, IEEE Trans Rehab R-31 (3), 246 (1982) Several statistical reliability studies have been conducted in areas of photovoltalc component design covering cell failure, raterconnect fatigue, glass breakage and electrical Insulation breakdox~n This paper integrates the results from these studies and draws general conclusions relative to optimal rehabihty features for modules The analysis is based on deslgnmg for specified low levels of component failures and then controlling the degrading effects of the failures through the use of fault tolerant circuitry and module replacement Means of selecting the cost-optimal level of component failures, clrcmt redundancy, and module replacement are described
Electrostatic failure in semiconductors. BURTON A U~GER Semuondu~IOl Piodn, 22 (September 19821 Three electrostatic discharge [allure models, the human body model, the charged device model, and the field induced model, are compared m terms of damage threshold, discharge parameters, failure mechanisms and device testing Component availability. CLIH~ORD W MARSHALL ILLL Trans Rehah R-31 (2), 216 11982) Rehabthty can reasonably be defined for an individual component Availab,hty depends intrinsically on the service discipline of a system so that a component can not be assigned a measure of a,~allabiht) exclusive of the system in which it operates To obtain a general formulation the structural details of the system are omitted and the action of the system is represented by the waiting time distribution of the component service queue Two approaches to the definition of component avallablllt} are given Ill An integro-dlfferentlal equation deftnltmn in terms of the service waiting time distribution (2) A methodological definition for component avaflablhty m terms of the details of a combinatorial queue model Rehability of flip chip solder bump joints. V K NAGESH Pt o~ IEEE Rehab Phy~ Stmp, 611982) Increasmg complexitles of the IC chips imply increasing demands on the chip packaging Flip chip solder bump joints seem to provide the most logical solution for VLSI packaging Thermal fatigue cycling studies of the joints were done and found to be extremely rehable with very low failure rates Different factors affecting the fatigue lr, es were dnalyzed Mlcrostructural a~pects of failure in the flip chip solder bump joints ~ere studied usmg fracture surface and cross-sectional analyses I~ormatlon and growth of Cu Sn mtermetalhcs and their effect on the failure of flip chip solder bump joints were studied
Bias humidl D performance and failure mechanisms of nonhermetic aluminum SICs in an environment contaminated w,th CI 2, M IANNUZZI Prot IEEE Rehab Phys Syrup, 16 I1982) The ageing of alummum metalllzed silicon mtegrated circmt test vehicles ~bare, SIN CAPS only, RTV only, SIN C A P S + R T V ) at 85°C, 85",, RH and l p p m Cl 2 for 2664 hours ~as carried out with either + 10V, - 1 0 V , or 0V d c bias imposed on the samples The leakage currents for the encapsulated samples increased slowly over long periods of time in chlorine Failures were observed in the unencapsulated groups Testmg for MOS IC failure modes DAVID G EDWARDS IEEE Trails Rehab R-31 (1), 9 (1982) The failure modes of MOS technology are described with emphasis on recent trends in LSI Failures are classified mto short, open, degradation, and soft recoverable errors The following failure modes are co,,ered oxide breakdown caused by static discharge and time-dependent effects, metalhzatlon failures caused by electromlgratlon or corrosion, threshold voltage shifts caused by lomc contamination, surface-charge ~preadlng, and the hot-electron effect Special attention is paid to the increasingly important alpha-particle-Induced soft errors Methods by which each of the failure modes can be detected are discussed and tabulated, together with the information on acceleration [actors necessary for designing hfe and screen tests Of the fadure modes cited, threshold shifts due to hot electrons, and soft errors caused by lOmzlng radmtaon are likely to be increasingly important as VLSI technology progresse', Degradation of thin-gate MOSFETs under high electric field stress. H ISHIUCHI, Y MATSUMOTO, T MOCHIZUKL S SAWADA and O OZAWA Proc IEEE Rehab Phys Syrup, 228 11982) A new type of instability of threshold voltage and transconductance in MOSFET's under high electric field