The 4th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics

The 4th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics

Microelectronics Joumal, 24 (1993) 4 The 4th ESPRIT Workshop on the Characterisation and Growth of Thin Dielectrics in Microelectronics The 4th E S P...

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Microelectronics Joumal, 24 (1993) 4

The 4th ESPRIT Workshop on the Characterisation and Growth of Thin Dielectrics in Microelectronics The 4th E S P R I T Workshop on the Charaaerisation and Growth of Thin Dielectrics in Microelectronics was held in Blarney, Co. Cork, Ireland, on 20th and 21st October I992. The workshop is organised by the Irish National Microelearonics Research Centre (NMRC) on behalf of the consortium involved in E S P R I T project 2039, "Advanced PROM Building Blocks (APBB)".

APBB The APBB project is concerned with the integration of Non Volatile Memory (NVM) Elements (i.e. EPR.OM and EEPI~OM) into small geometry CMOS processes. The growth and characterisation of thin dielectrics is of critical importance in NVM technologies. The main partners in the APBB consortium are: • GEC-Plessey, U K •

SGS-Thomson, France and Italy



Eurosil Electronic, Germany



IMEC, Belgium

• NMP, C, Ireland The project also includes several Small to Medium Enterprises (SMEs) Who are using the technology developed within the project in the development of new products.

Concept The concept of these workshops, originates from discussions between the CEC and the APBB project consortium during the definition phase o f the APBB project. It was felt that dissemination of information on ESPtLIT based research work could be facilitated by the provision o f a forum whereby research groups with common interests could come together and discuss their work in the dielectrics area. The workshop is designed to address this requirement. It is open to all those working in the area of thin dielectrics and is not restricted to those working in ESPRIT programmes.

Feedback The organisation o f the workshop has been undertaken for the past four years by N M R C . The first workshop was held in October 1989, in Kinsale, Co. Cork, Ireland. The 1990 and 1991 workshops were held as half-day sessiom in conjunction with the ESR.EF conference in Bari, Italy and Bordeaux, France respectively. Due to feedback frorfi the participants at these two workshops it was decided to hold this year's workshop over a day and a half in Cork in order to provide time for discussion and interaction between the participants.

0026-2692/93156.00 © 1993, Elsevier Science Publishers Ltd.

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Growing support

NEXT IS~.qUES

Since its inception in 1989, the workshop has grown in support and stature. This year there were over 40 participants from 10 European countries. There were eighteen c o n t r i b u t e d papers covering topics including the effect of cleaning on oxide properties, growth o f dielectrics using R a p i d T h e r m a l Processing techniques, reliable growth of interlayer dielectrics, novel dielectrics, characterisation techniques and effects of irradiation, temperature, and stress on dielectric wearout and breakdown. There were two excellent invited papers given by Prof. Don Wolters from Philips kesearch Labs, Eindhoven, The Netherlands and Prof. Bernard Drevillon from LPCIM, Palaiseau, France. Prof. Wolters paper dealt with a new model for the thermal oxidation of silicon and Prof. Drevillon dealt w i t h o x i d e t h i c k n e s s m e a s u r e m e n t s by spectroellipsometry.

Volume 24 Number 5

Publication The papers published here in this issue o f MicroelectronicsJournal testify to the quality and scope of material presented at this year's workshop. We are v e r y g r a t e f u l to the M a n a g i n g E d i t o r o f Microelectronics Journal, R o y Szweda, and Assistant Editor, Inken Purvis, for the opportunity to publish the proceedings of the workshop. We are also indebted to all of the contributors for the time and effort spent in the preparation of their papers and for the lively and interesting discussions which took place during the course of the workshop itself. We would like to take this opportunity to thank all who participated in or helped in any way with this year's workshop. It is our hope that those who participated in this year's workshop profited from it. Finally, we hope that the workshop will enjoy continued interest and participation in the future and that the level of support will continue to grow. Alan Mathewson and Paula O'Sullivan, NMR C

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The core of the next issue of Microelectronics Journal/Journal of Semi-Custom ICs will feature a collection of papers from T h e 1992 Canadian VLSI Conference. Plus feature articles on •

VHDL Memory Models



Library Test Suites



GaAs in Telecoms

Volume 24 Number 6 Issue 6 will have feature articles on n e w Microprocessor Developments from around the world. In particular, •

From the USA, a look at Intel's new Pentium and Motorola's Power PC,



From Europe, a look at A R M and INMOS, plus



Microprocessor development in Japan.

COVER STORY: Motorola's Rugged Accelerometer Motorola, Phoenix AZ, USA, has developed a robust silicon accelerometer that is highly resistant to shock damage and yet is said to be amongst the smallest of competitive designs. The MAS50G accelerometer is designed for the automotive market, i.e. for high volume, low cost applications and is targeted for an inexpensive plastic package.

For more details on please turn to the News Update section on page 328.