The role of boundaries on high speed compound semiconductor devices

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THE ROLE OF B O U N D A R I E S ON HIGH S P E E D C O M P O U N D S E M I C O N D U C T O R DEVICES HL

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Recel'~ed 2 September 1982 accepted for publlcaUon 11 No'~emN.r 1982 The role of boundaries and interfaces on the dectrlcal Lh,lract~.rlstlc~ o[ long t n d s u b l n l c r o n scale compound semiconductor devices is discussed

Surface Science 132 (198~) 62~ -636 North-Holland Publishing Compan',

623

INJECTION D E P E N D E N C E OF QUASIBALLISTIC T R A N S P O R T GaAs AT 77 K P

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Recel,,ed 18 October 1982 accepted for pubhcatlon 7 [)cc~.lrlber 1982 1he paper gr,,es some results obtained b) M o n t e - ( a r l o smmlatlon ol submJc.ron N + NN structures showing that the electron emission into the central N region p, probabN a thermlonlt. emission Though the fraction of ballistic and quaslbalhqlc electrons m the total ~.urrent should not be neghglble (respectlveb 10% and 14g for a 0 4 ,am N t'~pe region for a 02V bla', ,,oltagej the I ( V ) characterlstl,._,; for b,a,, ~,ohage,, Io'*er than the. I 1 mter~,alle', t.nergx do not greatl,, differ from a linear one