Theory of the drain leakage current in silicon MOSFETs

World abstracts on microelectronics and reliability value of the density of states in the mid-gap is then 9 x l01L eV -1 cm -2. It can be reduced by thermal annealing in the "forming-gas" down to 8 x 101° eV- ~ cm- 2, quite close to the value of the Si-SiO 2 interface used up to now for microelectronic components. So germanium can be a good candidate for electronic engineering, moreover it has the advantage of a high speed carrier mobility.

Improvement in reliability of n-MOSFETs by using rapid thermal N20-reoxidized nitrided gate oxides. YOU-LIN WU, ZHAO-YIN WU and J E N N - G W O HWU. Solid-State Electronics, 38(4), 839 (1995). Instead of oxygen, pure NEO gas was used as the reoxidizer for rapid thermal reoxidized nitrided oxide in this work. The performance of n-MOSFETs with this new gate dielectric is dramatically improved in both the radiation-hardness and channel-hot-carrier stress when compared with those with pure O2-grown and Oz-reoxidized nitrided oxides. Higher mobility is observed for the n-MOSFETs with NzO-reoxidized nitrided oxides in both the high field and low field regions. These improvements are attributed to the additional nitridation effect during the NzO reoxidation process, which will incorporate more nitrogen at the SiO2-Si interface. Influence of etching on the surface properties of Cdo.99Mno.oiTe gallium doped. B. BIEG, S. K U Z M I N SKY and J. SZATKOWSKI. Vacuum, 46(5/6), 481 (1995). The influence of surface treatment on the surface properties of Cdo.99Mno.o~Te gallium doped was studied. Using surface photovoltage spectroscopy (SPS) we have investigated three types of the monocrystal surfaces: polished with "Gamal", etched in 5°0 Br2/methanol and etched in KOH/HzO. Changes in the electronic structure of Cdo.99Mn0.o~Te:Ga surfaces were observed. The temperature dependence of the band gap and surface states have been determined for each sample. Interfacial recombination of current carriers: influence on magnetoconcentration effect in semiconductor heterostructure. V. G. SAVITSKY and B. S. SOKOLOVSKY. Vacuum, 46(5/6), 505 (1995). This paper investigates theoretically the magnetoconcentration effect in an abrupt heterostructure on the basis of non-degenerate semiconductors with an intrinsic conductivity in the case when a recombination of non-equilibrium current carriers occurs at the heterostructure interface. The influence of the interfacial recombination velocity on the current-voltage characteristics of the heterostructure is analysed. Potential barrier relations for low carrier injection at semiconductor surfaces of microelectronic devices and ICs. NICK VELCHEV. Electron Technoloffy (Warsaw, Poland), 28(1/2), 89 (1994). The potential barrier at semiconductor surfaces and interfaces is studied under low level of minority carrier injection. Basing on exact analytical relations for the potential barrier, the effect of surface and bulk potential, carrier concentration,

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carrier diffusion length and effective Debye length is evaluated and illustrated by two-and three-dimensional graphs. The reported results could be used in design and technology of semiconductor barrier devices and ICs.

Theory of the drain leakage current in silicon MOSFETs. SUMIO TANAKA. Solid-State Electronics, 38(3), 683 (1995). The interband tunneling theory under a nonuniform electric field formulated previously [1] has been applied to a drain leakage current in n-channel silicon MOSFETs. The leakage current is generated in the drain in the vicinity of the surface when a high drain-to-gate voltage is applied. The electrostatic potential of the nonuniform electric field has been calculated by depletion approximation. A good agreement has been obtained between calculation and measurement. It has been proposed that the saturation leakage current appears when the surface depletion layer and the depletion layer of the pn junction between an n-type drain and a p-type substrate overlap in the drain. Some approximate calculations are studied and compared with the exact calculation. It has been predicted theoretically that in MOSFETs without a pn junction perpendicular to the surface, a similar saturation characteristic appears when the donor impurity concentration decreases rapidly from the interface to the substrate. Double acceptor (77/200 meV) Native defect in GaAs. MACIEJ BUGAJSKI. Electron Technolo#y (Warsaw, Poland), 28 (1/2), 3 (1995). Photoluminescence and capacitance spectroscopy study of double acceptor levels at 77 meV and 200 meV above the valence band, attributed to gallium antisite has shown that dominant defects giving rise to the levels in n-type crystals are different from those in p-type crystals. Both defects are enhanced by Ga-rich growth conditions, however only those formed in n-type GaAs are consistent with a double acceptor model. It is argued that the Fermi energy contribution inhibits the formation of double acceptor Gaks defects in p-type crystals. 8. THICK- AND T H I N - F I L M C O M P O N E N T S HYBRID CIRCUITS AND MATERIALS Thin-film decoupling capacitors for multichip modules. DUANE DIMOS, STEVEN J. L O C K W O O D , ROBERT W. SCHWARTZ and M. STEVEN RODGERS. IEEE Transactions on Components, Packaging and Manufacturing Technology, Part A, 18(1), 174 (March 1995)o Thin film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multichip modules. These thin-film decoupling capacitors are intended to replace multilayer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should