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Transients in thin-film RC networks
ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
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equipment industry. This paper describes a family of integrated circuits that has been specifically designed for use in the commercial computer industry, where high speed, high reliability and low cost are the prime requirements. In this industry all these requirements have equal importance, and integrated circuits are only acceptable when they meet all three. In the first part of the paper the design philosophy of the elements is described. This is followed by a detailed description of the logic and circuit form that has evolved. The package in which the elements are encapsulated is as important as the elements themselves. The paper describes the package that has been designed for this family of elements. The .paper ends by giving some attention to the problems of the logic designer and the layout of printed circuit boards. Liquid cooling of semiconductor devices. J. G. FAIRHURST. Applications of Microelectronics Symposium, University of Southampton. LE.E. Conference Publication No. 14 (21-23 September 1965), p. 10/1. In many semiconductor devices most of the power is dissipated in junctions close to the wafer surface and it is their temperature rise above the surrounding ambient which limits the maximum possible packing density. The most direct way of cooling the device therefore appears to be to use a cooling liquid in direct contact with the wafer surface where the power is being dissipated. In the work covered by this paper silicon planar devices were used with a variety of cooling liquids in direct contact with the wafer surface. The object was to see what advantages, if any, could be obtained by means of liquid cooling.
THIN-FILM CIRCUITS AND MATERIALS Transients in thin-film R e networks. F. A. LINDHOLMand W. W. HAPP. Electro-Technology (August 1965), p. 38. Alternate approaches to analysis of transients in thin-film microcircuits are described. A lumped-element model is shown to be most accurate, convenient and flexible. High resistivity tantalum films. H. J. SCHUTZE. Vakuum Technik (December 1965), p. 213. (In German.) The electrical properties of tantalum films sputtered in argon, and anodic tantalum oxide films are discussed. It is shown that the resistivity and temperature coefficient of sputtered films are strongly dependent on the sputtering voltage, while the sputtering time and current density produce essentially no changes. Resistivities of 50,000 micro-ohm-cm, with maximum temperature coefficients of --200 ppm/°C have been obtained by low energy sputtering. The results for a film sputtered at 1800 V are as follows:
Tantalum Density 11.0 gr/cm 3 Deposition rate 7.6 A/V Specific resistance 5000 microhm-cm Temperature coefficient -- 150 ppm/°C. The effect of composition on the temperature coefficient of resistance of NiCr films. D. S. CAMPBELLand B. HENDRY. British Journal of Applied Physics (November 1965), p. 1719. The films were prepared by flash evaporation from tungsten strips, on to borosilicate glass substrates at 300°C, at deposition rates of 1-10 A sec -1. It was found that the temperature coefficient of resistance is a function of the Ni/Cr ratio as follows: Composition 5% Cr 5-55% Cr 55-57% Cr 57% Cr Change ofT.C.R, with increasing Increase Decrease Abrupt Increase film thickness increase At 55% Cr the temperature coefficient of resistance is independent of thickness at least over more than an order change in thickness. These effects are discussed in relation to chromium-oxygen boundaries in the films. Liquid cooling of microcircuits, including the use of nucleate boiling. G. G. BLOODWORTHand IV[. J. COOK. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21-23 September !965), p. 9/1. Liquid cooling makes possible a much
357
equipment industry. This paper describes a family of integrated circuits that has been specifically designed for use in the commercial computer industry, where high speed, high reliability and low cost are the prime requirements. In this industry all these requirements have equal importance, and integrated circuits are only acceptable when they meet all three. In the first part of the paper the design philosophy of the elements is described. This is followed by a detailed description of the logic and circuit form that has evolved. The package in which the elements are encapsulated is as important as the elements themselves. The paper describes the package that has been designed for this family of elements. The .paper ends by giving some attention to the problems of the logic designer and the layout of printed circuit boards. Liquid cooling of semiconductor devices. J. G. FAIRHURST. Applications of Microelectronics Symposium, University of Southampton. LE.E. Conference Publication No. 14 (21-23 September 1965), p. 10/1. In many semiconductor devices most of the power is dissipated in junctions close to the wafer surface and it is their temperature rise above the surrounding ambient which limits the maximum possible packing density. The most direct way of cooling the device therefore appears to be to use a cooling liquid in direct contact with the wafer surface where the power is being dissipated. In the work covered by this paper silicon planar devices were used with a variety of cooling liquids in direct contact with the wafer surface. The object was to see what advantages, if any, could be obtained by means of liquid cooling.
THIN-FILM CIRCUITS AND MATERIALS Transients in thin-film R e networks. F. A. LINDHOLMand W. W. HAPP. Electro-Technology (August 1965), p. 38. Alternate approaches to analysis of transients in thin-film microcircuits are described. A lumped-element model is shown to be most accurate, convenient and flexible. High resistivity tantalum films. H. J. SCHUTZE. Vakuum Technik (December 1965), p. 213. (In German.) The electrical properties of tantalum films sputtered in argon, and anodic tantalum oxide films are discussed. It is shown that the resistivity and temperature coefficient of sputtered films are strongly dependent on the sputtering voltage, while the sputtering time and current density produce essentially no changes. Resistivities of 50,000 micro-ohm-cm, with maximum temperature coefficients of --200 ppm/°C have been obtained by low energy sputtering. The results for a film sputtered at 1800 V are as follows:
Tantalum Density 11.0 gr/cm 3 Deposition rate 7.6 A/V Specific resistance 5000 microhm-cm Temperature coefficient -- 150 ppm/°C. The effect of composition on the temperature coefficient of resistance of NiCr films. D. S. CAMPBELLand B. HENDRY. British Journal of Applied Physics (November 1965), p. 1719. The films were prepared by flash evaporation from tungsten strips, on to borosilicate glass substrates at 300°C, at deposition rates of 1-10 A sec -1. It was found that the temperature coefficient of resistance is a function of the Ni/Cr ratio as follows: Composition 5% Cr 5-55% Cr 55-57% Cr 57% Cr Change ofT.C.R, with increasing Increase Decrease Abrupt Increase film thickness increase At 55% Cr the temperature coefficient of resistance is independent of thickness at least over more than an order change in thickness. These effects are discussed in relation to chromium-oxygen boundaries in the films. Liquid cooling of microcircuits, including the use of nucleate boiling. G. G. BLOODWORTHand IV[. J. COOK. Applications of Microelectronics Symposium, University of Southampton. I.E.E. Conference Publication No. 14 (21-23 September !965), p. 9/1. Liquid cooling makes possible a much