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Transistor engineering and introduction to integrated semiconductor circuits
196
NOTE
micro-crystalline powder was kindly supplied by the Harshaw Chemical Company, Electronics Division.
6. 7.
R. ZULEEG Hughes Aircraft Co., Semiconductor Division, Newport Beach, California
8. 9.
10. 11. References 1. P. K. WEIMER, Pm. I.R.E. 50, 1402 (1962). 2. W. TANTRAPORNand K. K. REINHARTZ.Proceedinm of the National Electronics Conference, Vol. 18, p. 736 (1962). 3. G. T. WRIGHT, J. Brit. I.R.E. 20, 337 (1960). 4. G. T. WRIGHT, Solid-State Electron. 5, 117 (1962). 5. NT.F. MOTT and R. W. GURNEY, Electronic Processes
Solid-State
Electronics
Pergamon
15.
Press 1963. Vol. 6, pp. 197-204.
BOOK G.
12. 13. 14.
in Ionic Crystals p. 172. Oxford University Press, New York (1940). A. ROSE, Phys. Rev. 97, 1538 (1955). R. W. SMITH and A. ROSE, Phys. Rev. 97, 1531 (19.55). M. KNUDSEN, Ann. Phys. 28, 7.5 (1909). I. P. KALINKIN et al., Soviet Phys.-Solid State 3, 1922 (1962): translated from Fiz. Tverd. Tela, 3, 2640 i196lj. G. T. WRIGHT, Proc. Inst. Elec. Eng. B106, Suppl. 17 (1959). R. S. M&I.ER, Electronic processes in Au-CdS-In diodes. California Institute qf Technology Report, Solid State Electronics Laboratories (1962). R. M. BUBE, J. Appl. Phys.33, 1733 (1962). M. A. LAMPERT, Phys. Rev. 103, 1648 (1956). J. DRESNER and F. V. SHALLCROSS, Solid-State Electron. 5, 205 (1962). P. K. WEIMER, Evaporated circuits incorporating thin-film transistors, International Solid St&e Circuits Conference, Philadelphia (1962).
Printed in Great Britain
REVIEWS
W. A. DUMMER and J. MCKENZIE ROBINSON This data book being largely a collection of freely (Editors) : British Miniature Electronic Comavailable trade literature, many people might still ponents and Assemblies Data Annual, Pergamon prefer to use manufacturers’ catalogues instead. Press, Oxford, 196213. pp. 1140, 1962/63. E7.
THIS Annual
represents a large collection of data on available miniature electronic components referring to the products of about 130 British manufacturers. The preface lists certain well-intentioned criteria for selecting the devices listed, but a quick glance at the index shows some important gaps : certain British manufacturers of high repute, such as A.E.I., Geo. Bray & Co., Brimar, ElecComponents, N.S.F. Ltd., Parmeko, tronic Steatite & Porcelain, Telcon, and Zenith Electric, to name but a few, are not mentioned here. This is a pity, as it largely distracts from the value of a catalogue which might have been comprehensive as well as useful. The high price of the book could perhaps be defended by the cost of the 1140 nearly foolscap pages of high-quality paper weighing over 6 lb., and by the time taken to reproduce such data.
These can readily be brought up to date without having to pay E7 each year for a new edition (being an Annual, it is presumably intended to bring out a new edition every year). The Electrical Research Association, Leather-head, Surrey
E. BILLIG
ALVIN B. PHILLIPS: Transistor Engineering and Introduction to Integrated Semiconductor Circuits. McGraw-Hill, New York, 1962. 366 pp., $12.00. THIS book starts off a new series of McGraw-Hill
editions in solid-state engineering. It is intended to help the transistor designer and circuit engineer to understand the laws that govern the functioning of semiconductor devices. To this end the author reserves roughly one
BOOK
half of the text to a general statement about the processes involved, a survey of the atomic structure of semiconductors, their energy-band theory and the theory of the p-n junction (Chaps. l-7). The second part of the book is devoted to the junction-transistor theory, the electrical characteristics of transistors and their frequency behavior (Chaps. 8-14). The final chapters, 15-17, deal with the junctiontransistor amplifier, the transistor switches and general design principles including remarks on integrated semiconductor circuits. Choice and subdivision of this material is certainly useful for the purpose envisioned by the author, and probably has proved to be the best approach in a course for semiconductor engineers who have neither a thorough training in solidstate physics nor experience in transistor design. It goes without saying that, in a volume of 366 pages, parts of this extended program are dealt with only in a cursory manner. For example, the description of the processes involved does not give more than the statement that crystals have to be grown. The trem.endous amount of work necessary to understand the materials properties, growth methods, and perfection of semiconductor crystals is not dealt with. The author assumes that this complex is not essential for the design engineer. It may be argued, however, that just the very small high-frequency devices of today pose a very intricate materials control problem with respect to the over-all yield which is of primary importance for a design engineer. The utilitarian approach starts off with the description of the most recent production processes with concentration on meltbackand diffusion- as well as grown-diffused transistors, and finally the diffused-base mesa and epitaxial silicon-planar transistor. In Chap. 2 a qualitative treatment of the atomic structure of solids is presented. The introduction of the three quantum numbers n,l,m, so essential for an understanding of the quantum states, is rather accidental. Mainly 1 could be brought forward to the reader in a short way by writing the Schroedinger equation in spherical co-ordinates with the usual separation by the factor I (I+ 1). [See for example: A. NUSSBAUM, Semiconductor Device Physics. Prentice Hall, New York (1962)]. In Chap. 3 the energy bands are associated with E
REVIEWS
197
the specific materials constants for germanium and silicon, and the Fermi-distribution function and the state density expression are introduced. Temperature variation of carrier densities and the role of donors and acceptors are briefly described. Chap. 4 gives a useful compilation of graphs concerning the concentration dependence of mobility and its temperature dependence, the energy levels of impurities and a short outline of the role of recombination centers. With Chap. 5 the reader enters the central topic of the book, the p-n junction. Here the minority and majority carrier-current components are deduced in a very readable fashion, and useful diagrams show depletion-layer width as a function of voltage over impurity concentration and the important relation between junction capacitance, voltage and impurity range (Lawrence-Warner) for diffused junctions. In Chap. 6 general characteristics of the p-n junctions are discussed, including the temperature dependence of the reverse current, the reverse breakdown in its different forms and minority carrier storage at p-n junctions. first Chaps. 7-9 introduce the transistor, qualitatively and then analytically, in a quite readable form. The design engineer finds here, for example, the formula for the calculation of the ring-base contact. The case of high-level injection is treated in Chap. 10; Chaps. 11 and 12 introduce the low-signal low-frequency four-pole equations, and Chap. 13 the high-frequency h-parameters. The rest of the book (Chaps. 14-17) is devoted to the engineering problems of optimum frequency response, transistor amplifiers and switches. In giving a short outline of the integrated semiconductor circuits, the author points out at the end of the book that “the transistor engineer and the electronic circuit engineer of today will inevitably be the solid-state engineers of tomorrow”, a remark well taken. The book can be warmly recommended to all students and engineers in the field of transistor design and performance who want to get a short but thorough introduction into this very extended and difficult field. Research Laboratories Division, The Bendix Corporation, Southjield, Michigan
H. F. MATARB
NOTE
micro-crystalline powder was kindly supplied by the Harshaw Chemical Company, Electronics Division.
6. 7.
R. ZULEEG Hughes Aircraft Co., Semiconductor Division, Newport Beach, California
8. 9.
10. 11. References 1. P. K. WEIMER, Pm. I.R.E. 50, 1402 (1962). 2. W. TANTRAPORNand K. K. REINHARTZ.Proceedinm of the National Electronics Conference, Vol. 18, p. 736 (1962). 3. G. T. WRIGHT, J. Brit. I.R.E. 20, 337 (1960). 4. G. T. WRIGHT, Solid-State Electron. 5, 117 (1962). 5. NT.F. MOTT and R. W. GURNEY, Electronic Processes
Solid-State
Electronics
Pergamon
15.
Press 1963. Vol. 6, pp. 197-204.
BOOK G.
12. 13. 14.
in Ionic Crystals p. 172. Oxford University Press, New York (1940). A. ROSE, Phys. Rev. 97, 1538 (1955). R. W. SMITH and A. ROSE, Phys. Rev. 97, 1531 (19.55). M. KNUDSEN, Ann. Phys. 28, 7.5 (1909). I. P. KALINKIN et al., Soviet Phys.-Solid State 3, 1922 (1962): translated from Fiz. Tverd. Tela, 3, 2640 i196lj. G. T. WRIGHT, Proc. Inst. Elec. Eng. B106, Suppl. 17 (1959). R. S. M&I.ER, Electronic processes in Au-CdS-In diodes. California Institute qf Technology Report, Solid State Electronics Laboratories (1962). R. M. BUBE, J. Appl. Phys.33, 1733 (1962). M. A. LAMPERT, Phys. Rev. 103, 1648 (1956). J. DRESNER and F. V. SHALLCROSS, Solid-State Electron. 5, 205 (1962). P. K. WEIMER, Evaporated circuits incorporating thin-film transistors, International Solid St&e Circuits Conference, Philadelphia (1962).
Printed in Great Britain
REVIEWS
W. A. DUMMER and J. MCKENZIE ROBINSON This data book being largely a collection of freely (Editors) : British Miniature Electronic Comavailable trade literature, many people might still ponents and Assemblies Data Annual, Pergamon prefer to use manufacturers’ catalogues instead. Press, Oxford, 196213. pp. 1140, 1962/63. E7.
THIS Annual
represents a large collection of data on available miniature electronic components referring to the products of about 130 British manufacturers. The preface lists certain well-intentioned criteria for selecting the devices listed, but a quick glance at the index shows some important gaps : certain British manufacturers of high repute, such as A.E.I., Geo. Bray & Co., Brimar, ElecComponents, N.S.F. Ltd., Parmeko, tronic Steatite & Porcelain, Telcon, and Zenith Electric, to name but a few, are not mentioned here. This is a pity, as it largely distracts from the value of a catalogue which might have been comprehensive as well as useful. The high price of the book could perhaps be defended by the cost of the 1140 nearly foolscap pages of high-quality paper weighing over 6 lb., and by the time taken to reproduce such data.
These can readily be brought up to date without having to pay E7 each year for a new edition (being an Annual, it is presumably intended to bring out a new edition every year). The Electrical Research Association, Leather-head, Surrey
E. BILLIG
ALVIN B. PHILLIPS: Transistor Engineering and Introduction to Integrated Semiconductor Circuits. McGraw-Hill, New York, 1962. 366 pp., $12.00. THIS book starts off a new series of McGraw-Hill
editions in solid-state engineering. It is intended to help the transistor designer and circuit engineer to understand the laws that govern the functioning of semiconductor devices. To this end the author reserves roughly one
BOOK
half of the text to a general statement about the processes involved, a survey of the atomic structure of semiconductors, their energy-band theory and the theory of the p-n junction (Chaps. l-7). The second part of the book is devoted to the junction-transistor theory, the electrical characteristics of transistors and their frequency behavior (Chaps. 8-14). The final chapters, 15-17, deal with the junctiontransistor amplifier, the transistor switches and general design principles including remarks on integrated semiconductor circuits. Choice and subdivision of this material is certainly useful for the purpose envisioned by the author, and probably has proved to be the best approach in a course for semiconductor engineers who have neither a thorough training in solidstate physics nor experience in transistor design. It goes without saying that, in a volume of 366 pages, parts of this extended program are dealt with only in a cursory manner. For example, the description of the processes involved does not give more than the statement that crystals have to be grown. The trem.endous amount of work necessary to understand the materials properties, growth methods, and perfection of semiconductor crystals is not dealt with. The author assumes that this complex is not essential for the design engineer. It may be argued, however, that just the very small high-frequency devices of today pose a very intricate materials control problem with respect to the over-all yield which is of primary importance for a design engineer. The utilitarian approach starts off with the description of the most recent production processes with concentration on meltbackand diffusion- as well as grown-diffused transistors, and finally the diffused-base mesa and epitaxial silicon-planar transistor. In Chap. 2 a qualitative treatment of the atomic structure of solids is presented. The introduction of the three quantum numbers n,l,m, so essential for an understanding of the quantum states, is rather accidental. Mainly 1 could be brought forward to the reader in a short way by writing the Schroedinger equation in spherical co-ordinates with the usual separation by the factor I (I+ 1). [See for example: A. NUSSBAUM, Semiconductor Device Physics. Prentice Hall, New York (1962)]. In Chap. 3 the energy bands are associated with E
REVIEWS
197
the specific materials constants for germanium and silicon, and the Fermi-distribution function and the state density expression are introduced. Temperature variation of carrier densities and the role of donors and acceptors are briefly described. Chap. 4 gives a useful compilation of graphs concerning the concentration dependence of mobility and its temperature dependence, the energy levels of impurities and a short outline of the role of recombination centers. With Chap. 5 the reader enters the central topic of the book, the p-n junction. Here the minority and majority carrier-current components are deduced in a very readable fashion, and useful diagrams show depletion-layer width as a function of voltage over impurity concentration and the important relation between junction capacitance, voltage and impurity range (Lawrence-Warner) for diffused junctions. In Chap. 6 general characteristics of the p-n junctions are discussed, including the temperature dependence of the reverse current, the reverse breakdown in its different forms and minority carrier storage at p-n junctions. first Chaps. 7-9 introduce the transistor, qualitatively and then analytically, in a quite readable form. The design engineer finds here, for example, the formula for the calculation of the ring-base contact. The case of high-level injection is treated in Chap. 10; Chaps. 11 and 12 introduce the low-signal low-frequency four-pole equations, and Chap. 13 the high-frequency h-parameters. The rest of the book (Chaps. 14-17) is devoted to the engineering problems of optimum frequency response, transistor amplifiers and switches. In giving a short outline of the integrated semiconductor circuits, the author points out at the end of the book that “the transistor engineer and the electronic circuit engineer of today will inevitably be the solid-state engineers of tomorrow”, a remark well taken. The book can be warmly recommended to all students and engineers in the field of transistor design and performance who want to get a short but thorough introduction into this very extended and difficult field. Research Laboratories Division, The Bendix Corporation, Southjield, Michigan
H. F. MATARB