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A high-performance lateral geometry transistor for complementary integrated circuits
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ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
here since their inductance values are too small). The current trend is to realize frequency selective networks (conventionally in L C form) as activeR C networks. However, although the circuit described here incorporates such a nct'work, the main selectivityrequirement cannot be met by present-day active network techniques. The solution is found in the use of time-varyingR C networks, i.e.by combining passive R C thin-film phase-shift networks with miniature transistors,used as electronicswitches, in the form of so-called quadrature modulation circuits.The phase-shift networks, which in principle can bc passive thin-film R C circuits,arc in practice more easily realized as combinations of much simpler R C circuits with buffer amplifiers. A varlable-ratio frequency divider using micrologic elements. S. JANNAZZOand G. RUSTICHELLI, Electron. Engng, July (1967), p. 419. The detailed design of a variable-ratio frequency divider is described and particular stress placed on the use of the RT~L family of integrated circuits. The circuit allows full exp.loitation of the speed characteristics of this family and the simple extension of the number of division ratios. A high-performance lateral geometry transistor for complementary integrated circuits.
DAVID F. HILBIBER,IEEE Trans. Electron. Dev. ED-14, No. 7, July (1967), p. 381. The lateral geometry transistor has shown itself to be highly useful in the realization of low-frequency integrated circuits. This simple structure has been limited essentially to d.c. applications, however, by bandwidth and switching time performance. The p-n-p device to be described in this paper substantially overcomes these deficiencies by the addition of an n + diffusion directly beneath the emitter region. As a result of the steeper gradient at the bulk, or planar, portion of the emitter-base junction, injection occurs primarily near the surface. It is possible to control the dimensions of the buried layer such that injection of carriers greater than a few micrometers from the collector will be minimized. A further consequence of the n-~ region is the introduction of a graded base such that minority carrier transport is enhanced. The improved transistor structure has demonstrated the feasibility of obtaining an f~ of 10 MHz to 20 MHz at collector currents of 100 pA and rise, fall and storage times in the tens of nanoseconds.
Monolithic IC techniques produce first all-silicon X-band switch. ALFRED ERTEL,Electronics, January 23 (1967), p. 76. Transmit-receive device developed for radar project shows that diodes and microstrip transmission line can be fabricated directly on a silicon substrate.
Memory on a chip: a step toward large-scale integration. LEE BOYSEL,Electronics, February 6 (1967), p. 93. Already in production, a read-only memory made of MOS transistors on a single chip of silicon is fast, inexpensive and easily stores any combination of 256 bits in less than 1/200 square inch.
Computer-aided design for integrated circuits. J. S. KOFORD, P. R. STRICKLAND,G. A. SPORZYNSKI and E. M. HUBACHER. Graph. Sci. 9, No. 1 (January 1967), p. 18 ft. This paper describes a computer program that utilizes a graphic data processing system to aid in the design of mask artwork for hybrid integrated circuit modules of the type used in IBM System/360 Data Processing Systems. The system includes a small digital computer connected to a large-screen buffered display equipped with a light pen. A draftsman uses the light pen to aasemble a circuit schematic on the display screen; simultaneously, a description of the schematic is entered into the computer memory. Thereafter, the draftsman can use the light pen to layout detailed artwork for fabrication on the circuit mask, subject to automatic checking against the stored schematic. When the layout on the display screen is complete, the corresponding mask artwork will be drawn by the computer via its digitally-controlled plotter. The graphical manipulations on the display screen, the automatic checking operations, and the control of the digital plotter are all part of a FORTRANprogram that employs graphical subroutines to communicate with the light pen, display and plotter. RC active filters realized with operational integrated amplifiers. G. F. SABBADINI,Onde Elect., March-April (1967), p. 427. (In French.) In this note the fundamental criteria of the synthesis of RC active filters are described. Particularly quadratic and biquadratic functions have been investigated and exploited to make filters. Some realization methods have been considered using integrated amplifiers. Some patterns have been studied relative to the errors introduced by the active elements used. Finally typical examples of four filters using the new ~A702 integrated amplifier have been described.
ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y
here since their inductance values are too small). The current trend is to realize frequency selective networks (conventionally in L C form) as activeR C networks. However, although the circuit described here incorporates such a nct'work, the main selectivityrequirement cannot be met by present-day active network techniques. The solution is found in the use of time-varyingR C networks, i.e.by combining passive R C thin-film phase-shift networks with miniature transistors,used as electronicswitches, in the form of so-called quadrature modulation circuits.The phase-shift networks, which in principle can bc passive thin-film R C circuits,arc in practice more easily realized as combinations of much simpler R C circuits with buffer amplifiers. A varlable-ratio frequency divider using micrologic elements. S. JANNAZZOand G. RUSTICHELLI, Electron. Engng, July (1967), p. 419. The detailed design of a variable-ratio frequency divider is described and particular stress placed on the use of the RT~L family of integrated circuits. The circuit allows full exp.loitation of the speed characteristics of this family and the simple extension of the number of division ratios. A high-performance lateral geometry transistor for complementary integrated circuits.
DAVID F. HILBIBER,IEEE Trans. Electron. Dev. ED-14, No. 7, July (1967), p. 381. The lateral geometry transistor has shown itself to be highly useful in the realization of low-frequency integrated circuits. This simple structure has been limited essentially to d.c. applications, however, by bandwidth and switching time performance. The p-n-p device to be described in this paper substantially overcomes these deficiencies by the addition of an n + diffusion directly beneath the emitter region. As a result of the steeper gradient at the bulk, or planar, portion of the emitter-base junction, injection occurs primarily near the surface. It is possible to control the dimensions of the buried layer such that injection of carriers greater than a few micrometers from the collector will be minimized. A further consequence of the n-~ region is the introduction of a graded base such that minority carrier transport is enhanced. The improved transistor structure has demonstrated the feasibility of obtaining an f~ of 10 MHz to 20 MHz at collector currents of 100 pA and rise, fall and storage times in the tens of nanoseconds.
Monolithic IC techniques produce first all-silicon X-band switch. ALFRED ERTEL,Electronics, January 23 (1967), p. 76. Transmit-receive device developed for radar project shows that diodes and microstrip transmission line can be fabricated directly on a silicon substrate.
Memory on a chip: a step toward large-scale integration. LEE BOYSEL,Electronics, February 6 (1967), p. 93. Already in production, a read-only memory made of MOS transistors on a single chip of silicon is fast, inexpensive and easily stores any combination of 256 bits in less than 1/200 square inch.
Computer-aided design for integrated circuits. J. S. KOFORD, P. R. STRICKLAND,G. A. SPORZYNSKI and E. M. HUBACHER. Graph. Sci. 9, No. 1 (January 1967), p. 18 ft. This paper describes a computer program that utilizes a graphic data processing system to aid in the design of mask artwork for hybrid integrated circuit modules of the type used in IBM System/360 Data Processing Systems. The system includes a small digital computer connected to a large-screen buffered display equipped with a light pen. A draftsman uses the light pen to aasemble a circuit schematic on the display screen; simultaneously, a description of the schematic is entered into the computer memory. Thereafter, the draftsman can use the light pen to layout detailed artwork for fabrication on the circuit mask, subject to automatic checking against the stored schematic. When the layout on the display screen is complete, the corresponding mask artwork will be drawn by the computer via its digitally-controlled plotter. The graphical manipulations on the display screen, the automatic checking operations, and the control of the digital plotter are all part of a FORTRANprogram that employs graphical subroutines to communicate with the light pen, display and plotter. RC active filters realized with operational integrated amplifiers. G. F. SABBADINI,Onde Elect., March-April (1967), p. 427. (In French.) In this note the fundamental criteria of the synthesis of RC active filters are described. Particularly quadratic and biquadratic functions have been investigated and exploited to make filters. Some realization methods have been considered using integrated amplifiers. Some patterns have been studied relative to the errors introduced by the active elements used. Finally typical examples of four filters using the new ~A702 integrated amplifier have been described.