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Trench insulated gate bipolar transistors submitted to high temperature bias stress
Microelectronics Reliability 45 (2005) 1728–1731 www.elsevier.com/locate/microrel
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0026-2714/$ - see front matter Ó 2005 Elsevier Ltd. All rights reserved. doi:10.1016/j.microrel.2005.07.098
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