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VG semicon: MBE technology proven in R&D and production
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or the growth of high purity GaAs and A1GaAs epilayers, high mobility 2D structures, and many device structures, the MBE process is well-defined, the recipes are established and optimum procedures are known. VG Semicon offers the complete MBE product package including the system hardware, software and a comprehensive process technology package. Clearly the design of the MBE system and its key components critically determine the performance of the system. Vacuum quality, deposition configuration, source design, shutter design and geometry, and the substrate heater manipulator and holder design, all make
VG Semicon: MBE Technology Proven in R&D and Production MBE is now a well-estabiished and mature semiconductor fabrication technology. It is used extensively to fabricate new artificial structures for pioneering research into solid state physics and electronics. It is also used by many of the world's major electronic companies for the routine production of m i c r o w a v e , d i g i t a l and optoelectronic devices. VG Semicon's engineers hold international patents in many of the key areas of system design viz. effusion cells, shutters and manipulators. This experience has led to a set of guidelines and rules to ensure optimum performance, and these form the basis for the design of VG Semicon's product range. Many of the fundamental rules of MBE system tech-
nology have proved to be directly scalable. Most importantly for production and increased throughput, the flux profile at the substrate, which is the key factor determining uniformity, is uniquely determined by the deposition geometry. Thus, by understanding this relationship, uniformity can be optimized without compromise to other performance fac-
tots, such as source efficiency. M BE has a clear lead over all other lechnologies in achievable uniformities. For example, m the VG Semicon VI00 MBE system unifornaities oF thickness, doping and alloy composition of better than + 1% can be achieved across all samples over a Oinch diameter platten. This uniformity is not a function of growth iatc, substrate size or type, and is routinely and reproducibly achieved.
MBE products with high reliability hnproved reliability is the continuing objective of MBE system design engineers. A percentage point increase in the uptime can lead to a significant enhancement of device quality material yield and to the ultimate realizable material purity. The only guarantee of reliability is field-proven evidence,
crucial contributions towards the ultimate capabilities of a system. VG Semicon has fifteen years experience in the manufacture of MBE systems, and has installed over 200 systems worldwide. The systems development team at VG Semicon is the largest and most experienced in the business, and has a detailed understanding of the complex and subtle relationship between system design and performance.
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Figure 2. Multiehamber systems provide research scientZs'ts with great /lexibility to investigate and proeess multi component structures all in a UHV environment.
The MBE environment is challenging with the simultaneous requirements for reactive materials, high temperature and continuous mechanical movement. High reliability can only be achieved by using well-tested incremental development steps, based upon proven concepts. As with any piece of semiconductor processing equipment, the best designs are always the simplest. Simple solutions, however, require considerably more innovative skills than complex ones; but the payback in terms of reliability is enormous. For these reasons, a common philosophy in design concept for system configuration and components apply throughout VG Semicon's product line. This is coupled with a policy of continuous product improvement, using information both from inhouse laboratory testing and, most importantly, from customers. This policy has led to a product range with exceptional, proven high reliability.
Research systems MBE's research credentials are second to none. Every major semiconductor physics, solid state electronics and device materials laboratory in the world either has an MBE system or has direct access to one. The
ability of MBE to fabricate multicomponent and multilayer structures with nearmonolayer definition in doping and composition profiles, provides research scientists with a microfabrication tool of exceptional power and precision, allowing access to pioneering areas of scientific research.
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To undertake such work it is essential that the MBE system used for this purpose is capable of fully exploiting this potential. This often requires the system to reach ever more demanding peaks of achievement. An example of this is the requirement for shutter performance. New structures employ ever more complex and repeated multiple layers, and new advanced growth technologies such as Migration Enhanced Epitaxy (MEE) and Atomic Layer Epitaxy (ALE), similarly demand the reliable continuous operation of the shutters over many operations. VG Semicon have developed a shutter with unique proven p e r f o r m a n c e . The VG Shutter is based upon a mechanically simple mechanism which allows rapid, smooth and continuous operation. This shutter has been used in a laboratory investigating MEE where 30 000 cycles per run are used. It has reliably operated in this mode for many
months. It is of equal importance that the system software is compatible with these demands. VG Semicon's software system the VGS 8910, provides a powerful processing capability, which allows the user the flexibility to easily program and successfully run the most complex multilayer structures, where, for example, simultaneous multiple shutter operations and detailed repeat structures are incorporated.
Production systems V G Semicon's production M B E s y s t e m s are well-established and proven in production environments. High t h r o u g h p u t has been achieved by increased substrate size and substrate number. 4-inch wafers are becoming established as the next generation standard, To meet this development VG Semicon has two p r o d u c t i o n MBE systems - the V90 and V100. The V90 is a single wafer 4-inch system and the V100 a multiwafer 4-inch system. Full automatic sample handling and full process c o n t r o l are achieved via the system computer.
InP/GalnAs(P) GSMBE & CBE The introduction of gaseous sources into the MBE environment has successfully extended the beam epitaxial application areas to phosphorus containing species. The InP/ GalnAs(P) materials have been the most extensively investigated by Gas Source MBE (GSMBE) and Chemical Beam Epitaxy (CBE). V G Semicon gas source systems have been specifically targeted to fabricate
dc~ice struclurc, ~.,ed these material~ ~ ' ~ - i ' ~ ' ci>c alloy L t) il'i I; '*';l I It) 1~. ~ control G ;~ pro-requisite for these materiaG and the ability to abrupil} switch c o m p o s i t i o n and g l a d e composition is nccessa~y to realize many real device structures. VG Senlicor~ ha:, p i o n e e r e d lhe lise ol :i pressure control system for the b e a m flux c o n t r o l . Pressure control is inherently simpler than mass t]ow control and does not require the use of a carrier gas for the accepted precursors. VG Semicon has extended the power of the pres-
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V80ll CBE system, l,:xcepilona[ stability and reproducibility in~ :ll~)\ composition has been ~outinety demonstrated by VG Semicon G S M B E and CBE users. As the gas beam flux profile can be precisely controlled, extremelx high
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uniformities have also been demonstrated. These achievements clearly illustrate the rapid development of this t e c h n o l o g y and its potential as a semiconductor production processing system. Contact: I)~: David Williams. VG Semicon, Birches Industrial Estate, Imberhorne Lane, East Grinstead, West Susse:,:, RH19 1XZ, UK,
Tel: [441 (0) 342 325011. Fca'r: [441 (0) 342 315800.
or the growth of high purity GaAs and A1GaAs epilayers, high mobility 2D structures, and many device structures, the MBE process is well-defined, the recipes are established and optimum procedures are known. VG Semicon offers the complete MBE product package including the system hardware, software and a comprehensive process technology package. Clearly the design of the MBE system and its key components critically determine the performance of the system. Vacuum quality, deposition configuration, source design, shutter design and geometry, and the substrate heater manipulator and holder design, all make
VG Semicon: MBE Technology Proven in R&D and Production MBE is now a well-estabiished and mature semiconductor fabrication technology. It is used extensively to fabricate new artificial structures for pioneering research into solid state physics and electronics. It is also used by many of the world's major electronic companies for the routine production of m i c r o w a v e , d i g i t a l and optoelectronic devices. VG Semicon's engineers hold international patents in many of the key areas of system design viz. effusion cells, shutters and manipulators. This experience has led to a set of guidelines and rules to ensure optimum performance, and these form the basis for the design of VG Semicon's product range. Many of the fundamental rules of MBE system tech-
nology have proved to be directly scalable. Most importantly for production and increased throughput, the flux profile at the substrate, which is the key factor determining uniformity, is uniquely determined by the deposition geometry. Thus, by understanding this relationship, uniformity can be optimized without compromise to other performance fac-
tots, such as source efficiency. M BE has a clear lead over all other lechnologies in achievable uniformities. For example, m the VG Semicon VI00 MBE system unifornaities oF thickness, doping and alloy composition of better than + 1% can be achieved across all samples over a Oinch diameter platten. This uniformity is not a function of growth iatc, substrate size or type, and is routinely and reproducibly achieved.
MBE products with high reliability hnproved reliability is the continuing objective of MBE system design engineers. A percentage point increase in the uptime can lead to a significant enhancement of device quality material yield and to the ultimate realizable material purity. The only guarantee of reliability is field-proven evidence,
crucial contributions towards the ultimate capabilities of a system. VG Semicon has fifteen years experience in the manufacture of MBE systems, and has installed over 200 systems worldwide. The systems development team at VG Semicon is the largest and most experienced in the business, and has a detailed understanding of the complex and subtle relationship between system design and performance.
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Figure 2. Multiehamber systems provide research scientZs'ts with great /lexibility to investigate and proeess multi component structures all in a UHV environment.
The MBE environment is challenging with the simultaneous requirements for reactive materials, high temperature and continuous mechanical movement. High reliability can only be achieved by using well-tested incremental development steps, based upon proven concepts. As with any piece of semiconductor processing equipment, the best designs are always the simplest. Simple solutions, however, require considerably more innovative skills than complex ones; but the payback in terms of reliability is enormous. For these reasons, a common philosophy in design concept for system configuration and components apply throughout VG Semicon's product line. This is coupled with a policy of continuous product improvement, using information both from inhouse laboratory testing and, most importantly, from customers. This policy has led to a product range with exceptional, proven high reliability.
Research systems MBE's research credentials are second to none. Every major semiconductor physics, solid state electronics and device materials laboratory in the world either has an MBE system or has direct access to one. The
ability of MBE to fabricate multicomponent and multilayer structures with nearmonolayer definition in doping and composition profiles, provides research scientists with a microfabrication tool of exceptional power and precision, allowing access to pioneering areas of scientific research.
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To undertake such work it is essential that the MBE system used for this purpose is capable of fully exploiting this potential. This often requires the system to reach ever more demanding peaks of achievement. An example of this is the requirement for shutter performance. New structures employ ever more complex and repeated multiple layers, and new advanced growth technologies such as Migration Enhanced Epitaxy (MEE) and Atomic Layer Epitaxy (ALE), similarly demand the reliable continuous operation of the shutters over many operations. VG Semicon have developed a shutter with unique proven p e r f o r m a n c e . The VG Shutter is based upon a mechanically simple mechanism which allows rapid, smooth and continuous operation. This shutter has been used in a laboratory investigating MEE where 30 000 cycles per run are used. It has reliably operated in this mode for many
months. It is of equal importance that the system software is compatible with these demands. VG Semicon's software system the VGS 8910, provides a powerful processing capability, which allows the user the flexibility to easily program and successfully run the most complex multilayer structures, where, for example, simultaneous multiple shutter operations and detailed repeat structures are incorporated.
Production systems V G Semicon's production M B E s y s t e m s are well-established and proven in production environments. High t h r o u g h p u t has been achieved by increased substrate size and substrate number. 4-inch wafers are becoming established as the next generation standard, To meet this development VG Semicon has two p r o d u c t i o n MBE systems - the V90 and V100. The V90 is a single wafer 4-inch system and the V100 a multiwafer 4-inch system. Full automatic sample handling and full process c o n t r o l are achieved via the system computer.
InP/GalnAs(P) GSMBE & CBE The introduction of gaseous sources into the MBE environment has successfully extended the beam epitaxial application areas to phosphorus containing species. The InP/ GalnAs(P) materials have been the most extensively investigated by Gas Source MBE (GSMBE) and Chemical Beam Epitaxy (CBE). V G Semicon gas source systems have been specifically targeted to fabricate
dc~ice struclurc, ~.,ed these material~ ~ ' ~ - i ' ~ ' ci>c alloy L t) il'i I; '*';l I It) 1~. ~ control G ;~ pro-requisite for these materiaG and the ability to abrupil} switch c o m p o s i t i o n and g l a d e composition is nccessa~y to realize many real device structures. VG Senlicor~ ha:, p i o n e e r e d lhe lise ol :i pressure control system for the b e a m flux c o n t r o l . Pressure control is inherently simpler than mass t]ow control and does not require the use of a carrier gas for the accepted precursors. VG Semicon has extended the power of the pres-
~i
,,~vll'Chillg ;iI]~.~ .
q:;!biii!),
,~ipi~,)y speciali 3 !)rc{,,iled {i bakcablc gas handlhlg ~:,'.. ~v'ith i>et~!' ,c;tls 7:{ ~> tlg{tc)tl! Thc ti:!i 2S[ :ilhvi ~r~n
t¢Chlliqtle (lit,., }}{:ell m the VG Semlvon
V80ll CBE system, l,:xcepilona[ stability and reproducibility in~ :ll~)\ composition has been ~outinety demonstrated by VG Semicon G S M B E and CBE users. As the gas beam flux profile can be precisely controlled, extremelx high
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uniformities have also been demonstrated. These achievements clearly illustrate the rapid development of this t e c h n o l o g y and its potential as a semiconductor production processing system. Contact: I)~: David Williams. VG Semicon, Birches Industrial Estate, Imberhorne Lane, East Grinstead, West Susse:,:, RH19 1XZ, UK,
Tel: [441 (0) 342 325011. Fca'r: [441 (0) 342 315800.