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VLSI fabrication principles
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Microelectronics Journal 28 (1997) 359-365 © 1997 Published by Elsevier Science Limited Printed in Great Britain. All rights reserved 0026-2692/97/$17.00
j,
ELSEVIER
PH: S0026-2692(96)00079-1
Book Reviews VLSl Fabrication Principles
Sorab K. Ghandhi,John Wiley & Sons, New York, 1994, 834pp., ISBN: 19-471-58005-8 (hardbound) This Second Edition of VLSI FabricationPrinciples, which has appeared 10 years after the publication of the First Edition of this volume, describes the theoretical and practical aspects of the most advanced state of electronic technology - - verylarge-scale integration (VLSI). The text is designed to provide a comprehensive and up-todate treatment of this important and rapidly changing field. All chapters have been modified and enlarged to reflect a growing understanding of VLSI fabrication processes. In some chapters, the order of presentation has been: changed to fine-tune the book's efficiency as a senior and graduate-level teaching text. The chapter's introduction provides a general di'scussion of the topics, and subsequent sections present the basic principles underlying individual process steps. The problems at the end of each chapter form an integral part of the development of the topic and assist readers in estimating how well they have assimilated the material in the text. Tables of important data have been collected at the end of each chapter. The list of references with each chapter has been greatly expanded and updated to allow the interested reader to investigate further into the topics which have been covered. The first chapter gives some of the properties of silicon and GaAs, especially those which concern the fabrication processes that follow as well as the
properties of devices made by these fabrication technologies. Chapter 2 on phase diagrams describes the behaviour of combination of two or more materials in intimate contact exposed to heat treatments. Chapter 3 gives the common techniques for growing and doping the starting substrates (single-crystal silicon and GaAs) of a quality suitable for commercial device and microcircuits fabrication. The next three chapters provide a comprehensive overview of the key fabrication processes (diffusion, epitaxy and ion implantation) used today. Here, the emphasis has been placed on the basic principles underlying these processes. Chapter 7 discusses the physics and technology of native films, which play a key role in control of the device surface and thus in its long-term stability. Deposited films for protection and masking, interconnection, ohmic contacts and Shottky devices are discussed in Chapter 8. Chapter 9 outlines the many etching and cleaning processes that are used in the fabrication of microcircuits. Both wet and dry processes are considered, with special emphasis on the latter, since they are especially important for VLSI fabrication technology. Pattern generation and transfer processes, which are often used in conjunction with etching, are described in Chapter 10. Finally, in Chapter 11, which presents a synthesis of all of the preceding chapters, the fabrication technology of the basic integrated circuits is treated, with the emphasis on well-accepted approaches and also on those that appear most promising for VLSI circuits. In addition to the main chapters, the book contains an Appendix that considers some important mathematical techniques which can be used for solving problems involving diffusion in semiconductors.
359
Book Reviews
By presenting a unified treatment of both elemental and compound semiconductor technologies, this book gives students and practical professionals the tools with which to stay up-todate with the rapid changes in VLSI fabrication technology. Because it elaborates on VLSI circuits processing technology in a detailed and comprehensive manner, this book should be very suitable for students of electrical engineering, applied physics, and materials science. It can also serve as a reference for those actively involved in integrated circuits fabrication and process development.
D. Pantie Semiconductor Sensors
S.M. Sze (ed.),John Wiley & Sons, New York, 1994 Semiconductor sensors are semiconductor devices in which the semiconductor materials are chiefly responsible for sensor operation. However, when semiconductors are not the optimum materials for a particular sensor type, alternative materials can be deposited on top of the semiconductor substrates to form the sensor. The semiconductor sensor is differentiated from other solid-state sensors by its small size, and by the manufacturing technique used for integrated circuits (ICs). This substantially improves their performance/cost ratio and allows them to be integrated with microelectronic circuits. Thus, the further expansion of the microelectronic industry is inextricably linked to the development of semiconductor sensors.
nology. Chapter 2 is concerned with sensor technology, emphasizing bulk and surface micromachining. Each of the next seven chapters (Chapters 3-9) describes a particular sensor family, as defined by the physical, chemical, or biological input signal to which it responds. These families include: acoustic and mechanical sensors; magnetic, radiation and thermal sensors; and chemical sensors and biosensors. Lastly, Chapter 10 addresses integrated sensors (i.e. a monolithic integration of sensors and specially designed electronic circuits on the same semiconductor substrate) and special fabrication techniques. Each chapter has a brief historical review, as well as a general outline in its introduction. The operational principles, as well as the fabrication and characterization of the sensors, are then presented. Each chapter ends with a discussion of future trends for sensors. The problem set at the end of each chapter plays an integral part in developing the reader's understanding of the topics. The book Semiconductor Sensors, edited by Profi S.M. Sze, is highly recommended for engineers and scientists involved in sensor research and development or in designing sensor-dependent devices and systems. It is also recommended for senior undergraduate and first year graduate students who will particularly benefit from the interdisciplinary nature of the presentation, userfriendly organization for quick reference and more than 20,000 references provided as a background for this text.
Nabofia Jankovi~ Here is another book on semiconductor sensor devices and technology, but this time edited by the well-known Prof. S.M. Sze, who gathered the group of world-renowned experts in the semiconductor sensor field to contribute the chapters on all important aspects of modem semiconductor sensing devices. The book begins with introductory Chapter 1 by Prof. Sze, providing a classification of semiconductor sensors and the definition of basic sensor termi-
360
Physics of High-speed Transistors Juras Po~ela, Plenum Press, New York, 1993, ISBN: 0-306-44619-7, $85.00 In recent years, transistors having switching speeds of 50-100psec operating in the 1020 GHz region have been created, changing the important technologies of communications,
",
Microelectronics Journal 28 (1997) 359-365 © 1997 Published by Elsevier Science Limited Printed in Great Britain. All rights reserved 0026-2692/97/$17.00
j,
ELSEVIER
PH: S0026-2692(96)00079-1
Book Reviews VLSl Fabrication Principles
Sorab K. Ghandhi,John Wiley & Sons, New York, 1994, 834pp., ISBN: 19-471-58005-8 (hardbound) This Second Edition of VLSI FabricationPrinciples, which has appeared 10 years after the publication of the First Edition of this volume, describes the theoretical and practical aspects of the most advanced state of electronic technology - - verylarge-scale integration (VLSI). The text is designed to provide a comprehensive and up-todate treatment of this important and rapidly changing field. All chapters have been modified and enlarged to reflect a growing understanding of VLSI fabrication processes. In some chapters, the order of presentation has been: changed to fine-tune the book's efficiency as a senior and graduate-level teaching text. The chapter's introduction provides a general di'scussion of the topics, and subsequent sections present the basic principles underlying individual process steps. The problems at the end of each chapter form an integral part of the development of the topic and assist readers in estimating how well they have assimilated the material in the text. Tables of important data have been collected at the end of each chapter. The list of references with each chapter has been greatly expanded and updated to allow the interested reader to investigate further into the topics which have been covered. The first chapter gives some of the properties of silicon and GaAs, especially those which concern the fabrication processes that follow as well as the
properties of devices made by these fabrication technologies. Chapter 2 on phase diagrams describes the behaviour of combination of two or more materials in intimate contact exposed to heat treatments. Chapter 3 gives the common techniques for growing and doping the starting substrates (single-crystal silicon and GaAs) of a quality suitable for commercial device and microcircuits fabrication. The next three chapters provide a comprehensive overview of the key fabrication processes (diffusion, epitaxy and ion implantation) used today. Here, the emphasis has been placed on the basic principles underlying these processes. Chapter 7 discusses the physics and technology of native films, which play a key role in control of the device surface and thus in its long-term stability. Deposited films for protection and masking, interconnection, ohmic contacts and Shottky devices are discussed in Chapter 8. Chapter 9 outlines the many etching and cleaning processes that are used in the fabrication of microcircuits. Both wet and dry processes are considered, with special emphasis on the latter, since they are especially important for VLSI fabrication technology. Pattern generation and transfer processes, which are often used in conjunction with etching, are described in Chapter 10. Finally, in Chapter 11, which presents a synthesis of all of the preceding chapters, the fabrication technology of the basic integrated circuits is treated, with the emphasis on well-accepted approaches and also on those that appear most promising for VLSI circuits. In addition to the main chapters, the book contains an Appendix that considers some important mathematical techniques which can be used for solving problems involving diffusion in semiconductors.
359
Book Reviews
By presenting a unified treatment of both elemental and compound semiconductor technologies, this book gives students and practical professionals the tools with which to stay up-todate with the rapid changes in VLSI fabrication technology. Because it elaborates on VLSI circuits processing technology in a detailed and comprehensive manner, this book should be very suitable for students of electrical engineering, applied physics, and materials science. It can also serve as a reference for those actively involved in integrated circuits fabrication and process development.
D. Pantie Semiconductor Sensors
S.M. Sze (ed.),John Wiley & Sons, New York, 1994 Semiconductor sensors are semiconductor devices in which the semiconductor materials are chiefly responsible for sensor operation. However, when semiconductors are not the optimum materials for a particular sensor type, alternative materials can be deposited on top of the semiconductor substrates to form the sensor. The semiconductor sensor is differentiated from other solid-state sensors by its small size, and by the manufacturing technique used for integrated circuits (ICs). This substantially improves their performance/cost ratio and allows them to be integrated with microelectronic circuits. Thus, the further expansion of the microelectronic industry is inextricably linked to the development of semiconductor sensors.
nology. Chapter 2 is concerned with sensor technology, emphasizing bulk and surface micromachining. Each of the next seven chapters (Chapters 3-9) describes a particular sensor family, as defined by the physical, chemical, or biological input signal to which it responds. These families include: acoustic and mechanical sensors; magnetic, radiation and thermal sensors; and chemical sensors and biosensors. Lastly, Chapter 10 addresses integrated sensors (i.e. a monolithic integration of sensors and specially designed electronic circuits on the same semiconductor substrate) and special fabrication techniques. Each chapter has a brief historical review, as well as a general outline in its introduction. The operational principles, as well as the fabrication and characterization of the sensors, are then presented. Each chapter ends with a discussion of future trends for sensors. The problem set at the end of each chapter plays an integral part in developing the reader's understanding of the topics. The book Semiconductor Sensors, edited by Profi S.M. Sze, is highly recommended for engineers and scientists involved in sensor research and development or in designing sensor-dependent devices and systems. It is also recommended for senior undergraduate and first year graduate students who will particularly benefit from the interdisciplinary nature of the presentation, userfriendly organization for quick reference and more than 20,000 references provided as a background for this text.
Nabofia Jankovi~ Here is another book on semiconductor sensor devices and technology, but this time edited by the well-known Prof. S.M. Sze, who gathered the group of world-renowned experts in the semiconductor sensor field to contribute the chapters on all important aspects of modem semiconductor sensing devices. The book begins with introductory Chapter 1 by Prof. Sze, providing a classification of semiconductor sensors and the definition of basic sensor termi-
360
Physics of High-speed Transistors Juras Po~ela, Plenum Press, New York, 1993, ISBN: 0-306-44619-7, $85.00 In recent years, transistors having switching speeds of 50-100psec operating in the 1020 GHz region have been created, changing the important technologies of communications,