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An integrated circuit v.h.f. radio receiver
912
World Abstracts on Mieroeleetronies and Reliability
crystalline silicon films is reviewed and its current status described. Thermodynamic and kinetic aspects of this deposition process employing SiHCI 3 and SiCI,t as silicon bearing gases are discussed. Effects of various parameters on
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
Simple process propels bipolar PROMs to 16-K density and beyond. ROBERT K. WALLACE and ARTHUR J. LEAnN. Electronics. 147 (27 March 1980). Double-level metalization and polysilicon fuses guarantee dense high-speed memories and cleanly burned links that don't grow back. Integrated circuit characteristics at 260°C for aircraft enginecontrol applications. LESLmJ. PAI.gUTI, JOHN L. PRINCE and ANDREW S. GLISTA, JR. IEEE Trans. Components, Hybrids Mfo Technol. Chmt-2, (4) 405 (December 1979). Extensive characterizations of discrete devices and integrated circuits are reported over the temperature range from room temperature to 250°C and 300°C. These are the initial results of a Navy program for the evaluation and design of solidstate electronics to be operated uncooled in aircraft-engine control applications. Based on these results and results from earlier investigations, discrete semiconductor devices of essentially all generic types function with usable characteristics at junction temperatures up to at least 300°C. First-ordex device parameter changes result from increased leakage, reduced mobility, and increased resistivity. Both analog and digital integrated circuits were found to exhibit d.c. as well as useful dynamic characteristics up to temperatures near 250°C. Bipolar circuits with either junction or dielectric isolation degrade due to changes in device operating points and high leakage currents. In analog circuits the temperature capability is found to depend critically on the specific circuit design implemented. For a variety of CMOS devices tested a pnpn latchup mechanism between the p-channel transistor and the input protection network limits useful device operation to 260°C. Changes in device and circuit layout are needed to circumvent this failure mode. No fundamental barrier to 300°C functionality of integrated circuits (designed specifically for high-temperature application) was found. C-MOS multiplier speeds task for microprocessors. KEVIN SMITh. Electronics 7E (24 April 1980). Chip can generate 16bit product in 3 ms; typical power consumption is 20 mW at 5V. 16-bit mieropsocessor enters virtual memory domain. YOnAV LAVI, ASHER KAMINKER, AYRAM MENACHEM and SUBUASH BAL. Electronics. 123 (24 April 1980). Central processing unit supports 24-bit addresses; memory management unit offers instruction-aborting facility vital to virtual memory systems.
The steady-state distribution of signal charge in chargecoupled devices. STEFAN OPALSKI and MAREK SYRZYCKL Electron Technol. 12, (2) 3 (1979). The paper presents a simultaneous calculation method of surface potential and signal carriers steady-state profiles in surface-channel CCD structure. The results obtained make it possible to calculate the maximum signal charge which can be stored in the structure. A review of microprocessor software. A. R. RUNDLE. Microelectron. Reliab. 19, 541 (1980). In many ways, software is the most important aspect of a microcomputer system. After all, it is the software that changes a collection of microcomputer electronics into a working tool. However, the cost of writing software is often many times the cost of the electronics it is designed to use, and this has often been
the deposition process are presented. Comparisons are made between this plasma process and the conventional chemical vapor deposition process. Characteristics of the deposited polycrystalline silicon films are discussed.
SYSTEMS
AND
EQUIPMENTS
the critical factor in deciding whether to proceed with a microprocessor or microcomputer project. As a result, the importance of off the shelf software has grown significantly over the past few years. Software available for today's microcomputers can be grouped into the following categories: --Monitors and Utilities --Assemblers --High Level Languages --Operating Systems --Applications Programs.
A new ultra low power ULA and its application. P. FORStIAW. Microelectron. Reliab. 19, 463 (1980). The ULA is a technique whereby a custom LSI circuit is produced by designing a single aluminium interconnection pattern on to a preproc~sed component array. Development costs and timescales are small because only a single customising mask is required. The technique is particularly suited to the Collector Diffusion Isolation, or CDI, bipolar process, since the low resistivity N isolation diffusion and P substrate can be employed as the supply current distribution planes for all the component cells in the array. An integrated circuit v.h,f, radio receiver. I. A. W. VANCe. Radio Electron. Eno. 50, (4) 158 (April 1980). A radio receiver system for frequency-modulated signals is described which usesa direct conversion (zero intermediate frequency) technique. The characteristics of the system are developed especially in areas of difference from conventional methods. The realization is shown of the complete receiver in two integrated circuits which form part of a synthesized 30 to 88MHz equipment. The conclusion is drawn-that the combination of direct conversion and large-scale integration is a very powerful means for future development of radio receiver techniques.
Chips make fast math a snap for microprocessors. KVaSHNA RALLAPALL! and JoE KROEGER. Electronics. 153 (24 April 1980). Fixed- and floating-point arithmetic processor performs trig and log functions, too; floating-point unit offers double precision. Intelligent memories and the silicon chip. I. ALEKSANDER. Electron. Power. 324 (April 1980). Falling chip costs do not only mean more of the same when it comes to storing information in computers. Here it iS argued that the silicon chip can bring computer memories a step closer to those of humans. Advances in c.c.d, scanners with on-chip signal processing for electronic imaging. SAWAS G. CHAMBERLAIN. Radio Electron. Engr. 50, (5) 249 (May 1980). The paper deals briefly with a few widely-used image signal processing algorithms and discusses how these can be incorporated on the same silicon chip as that of the c.c.d~ scanner. Recent work on c.o.d, scanners is reviewed and solid-state scanners which include on-chip signal processing functions are described. Future trends are towards "smart" scanners; these are scanners with on-chip real-time processing functions, such as analogue-to-digital conversion, thresholding, data compaction, edge enhancement and.other real-time image processing functions.
World Abstracts on Mieroeleetronies and Reliability
crystalline silicon films is reviewed and its current status described. Thermodynamic and kinetic aspects of this deposition process employing SiHCI 3 and SiCI,t as silicon bearing gases are discussed. Effects of various parameters on
6. M I C R O E L E C T R O N I C S - - C O M P O N E N T S ,
Simple process propels bipolar PROMs to 16-K density and beyond. ROBERT K. WALLACE and ARTHUR J. LEAnN. Electronics. 147 (27 March 1980). Double-level metalization and polysilicon fuses guarantee dense high-speed memories and cleanly burned links that don't grow back. Integrated circuit characteristics at 260°C for aircraft enginecontrol applications. LESLmJ. PAI.gUTI, JOHN L. PRINCE and ANDREW S. GLISTA, JR. IEEE Trans. Components, Hybrids Mfo Technol. Chmt-2, (4) 405 (December 1979). Extensive characterizations of discrete devices and integrated circuits are reported over the temperature range from room temperature to 250°C and 300°C. These are the initial results of a Navy program for the evaluation and design of solidstate electronics to be operated uncooled in aircraft-engine control applications. Based on these results and results from earlier investigations, discrete semiconductor devices of essentially all generic types function with usable characteristics at junction temperatures up to at least 300°C. First-ordex device parameter changes result from increased leakage, reduced mobility, and increased resistivity. Both analog and digital integrated circuits were found to exhibit d.c. as well as useful dynamic characteristics up to temperatures near 250°C. Bipolar circuits with either junction or dielectric isolation degrade due to changes in device operating points and high leakage currents. In analog circuits the temperature capability is found to depend critically on the specific circuit design implemented. For a variety of CMOS devices tested a pnpn latchup mechanism between the p-channel transistor and the input protection network limits useful device operation to 260°C. Changes in device and circuit layout are needed to circumvent this failure mode. No fundamental barrier to 300°C functionality of integrated circuits (designed specifically for high-temperature application) was found. C-MOS multiplier speeds task for microprocessors. KEVIN SMITh. Electronics 7E (24 April 1980). Chip can generate 16bit product in 3 ms; typical power consumption is 20 mW at 5V. 16-bit mieropsocessor enters virtual memory domain. YOnAV LAVI, ASHER KAMINKER, AYRAM MENACHEM and SUBUASH BAL. Electronics. 123 (24 April 1980). Central processing unit supports 24-bit addresses; memory management unit offers instruction-aborting facility vital to virtual memory systems.
The steady-state distribution of signal charge in chargecoupled devices. STEFAN OPALSKI and MAREK SYRZYCKL Electron Technol. 12, (2) 3 (1979). The paper presents a simultaneous calculation method of surface potential and signal carriers steady-state profiles in surface-channel CCD structure. The results obtained make it possible to calculate the maximum signal charge which can be stored in the structure. A review of microprocessor software. A. R. RUNDLE. Microelectron. Reliab. 19, 541 (1980). In many ways, software is the most important aspect of a microcomputer system. After all, it is the software that changes a collection of microcomputer electronics into a working tool. However, the cost of writing software is often many times the cost of the electronics it is designed to use, and this has often been
the deposition process are presented. Comparisons are made between this plasma process and the conventional chemical vapor deposition process. Characteristics of the deposited polycrystalline silicon films are discussed.
SYSTEMS
AND
EQUIPMENTS
the critical factor in deciding whether to proceed with a microprocessor or microcomputer project. As a result, the importance of off the shelf software has grown significantly over the past few years. Software available for today's microcomputers can be grouped into the following categories: --Monitors and Utilities --Assemblers --High Level Languages --Operating Systems --Applications Programs.
A new ultra low power ULA and its application. P. FORStIAW. Microelectron. Reliab. 19, 463 (1980). The ULA is a technique whereby a custom LSI circuit is produced by designing a single aluminium interconnection pattern on to a preproc~sed component array. Development costs and timescales are small because only a single customising mask is required. The technique is particularly suited to the Collector Diffusion Isolation, or CDI, bipolar process, since the low resistivity N isolation diffusion and P substrate can be employed as the supply current distribution planes for all the component cells in the array. An integrated circuit v.h,f, radio receiver. I. A. W. VANCe. Radio Electron. Eno. 50, (4) 158 (April 1980). A radio receiver system for frequency-modulated signals is described which usesa direct conversion (zero intermediate frequency) technique. The characteristics of the system are developed especially in areas of difference from conventional methods. The realization is shown of the complete receiver in two integrated circuits which form part of a synthesized 30 to 88MHz equipment. The conclusion is drawn-that the combination of direct conversion and large-scale integration is a very powerful means for future development of radio receiver techniques.
Chips make fast math a snap for microprocessors. KVaSHNA RALLAPALL! and JoE KROEGER. Electronics. 153 (24 April 1980). Fixed- and floating-point arithmetic processor performs trig and log functions, too; floating-point unit offers double precision. Intelligent memories and the silicon chip. I. ALEKSANDER. Electron. Power. 324 (April 1980). Falling chip costs do not only mean more of the same when it comes to storing information in computers. Here it iS argued that the silicon chip can bring computer memories a step closer to those of humans. Advances in c.c.d, scanners with on-chip signal processing for electronic imaging. SAWAS G. CHAMBERLAIN. Radio Electron. Engr. 50, (5) 249 (May 1980). The paper deals briefly with a few widely-used image signal processing algorithms and discusses how these can be incorporated on the same silicon chip as that of the c.c.d~ scanner. Recent work on c.o.d, scanners is reviewed and solid-state scanners which include on-chip signal processing functions are described. Future trends are towards "smart" scanners; these are scanners with on-chip real-time processing functions, such as analogue-to-digital conversion, thresholding, data compaction, edge enhancement and.other real-time image processing functions.