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HItachi poly diamond
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Homo-epi diamond A team at Naval Research Labs (NRL), Washington DC, reported homo-epitaxial growth o f d i a m o n d using an o x y - a c e t y l e n e flame in air. In J. of Cryst. Growth (July 1991), KA Snail and LM Hanssen claim that the growth temperatures (11501500C) and growth rates (100-200tam/h) are the highest so far reported. The crystals were grown on ram-size natural diamond seeds and optical inspection showed the original cylindrical seed crystals growing onto p o l y h e d r a l shapes with identifiable crystal faces. Other measurements confirm the epitaxial nature of the deposition.
Hitachi poly diamond A collaboration between workers at Hitachi Research Labs and the Institute of Applied Sciences at Rouen, France, has reported successful deposition of diamond films in CO2/H2 and CO/CO2/H2 systems. In J. Cryst. Growth (July 1991) Y. Muranaka et ah from Hitachi and Lionel Breuilly of IAS, were able to synthesise a variety of films in CO/CO~/H~ systems and the films were found to consist of polycrystallates and poly acetylene c o m p o n e n t s . T h e crystallinity could, they noted, be improved by the increase of CO2 concentrations (up to 4.8%) which leads to an increase of O> atomic hydrogen and OH species.
HTSCs at KFA JiJlich The Institute of Solid State Research and the Institute
Logitech Precision Lap & Polish System
this was assessed by TEM. The atomic structure of the HTSC twice changes direction on suitably produced steps of the substrate, i.c. the atomic layers are tilted at right angles along welldefined lines. The crystal i m p e r f e c t i o n s thus pro duced, i.e. two 90' gram boundaries, lorm the desired micro-bridge. They o b v i o u s l y w e a k e n the HTSC properties within a region of a few atomic layers of thickness to a well-defined extent precisely suitable [br the application purpose. This opens a possibility for integrated configurations of a large number of SQUIDS on a single chip, Other K FA Julich workers have made significant steps in the understanding of HTSCs. Significant progress has been achieved at the H L R Z supercomputer Centre in Jtilich conc e r n i n g the t h e o r e t i c a l understanding of HTSCs. Ingo Morgenstern, Martin Frick, and Wolfgang Von der Linden, succeeded in numerically demonstrating high t e m p e r a t u r e superconduction in a special electron-phonon model using ~t C R A Y - M P 8 3 2 supercomputer.
7he PM4 precA'ion lapping and poh~'hing machine/i'om l ogitech
The PM4 from Logitech, Glasgow, UK, is a "new generation precision lapping and polishing machine offering significant refinements and benefits for all materials processing applications." The PM4 offers a number of refinements over its predecessors: • Convenient membrane touch panel lbr all functions: • Infinitely variable plate speed from 0 to 70rpm; • Automatic timer control with override; • Abrasive autofeed control from touch panel so operator does not have to reach over work; • Easily regulated reciprocation action - sweep speed variable from 0 to 45 c/min; • Refined slurry chute which feeds the slurry to the lapping plate without blocking or dripping on the wrong place: • New removable drip tray. Material applications are broad - typically when semiconductors need to be back-thinned or fiat polished etc. Whenever there is a need for a controlled fiat surface with a high quality finish then the PM4 will "undoubtedly be a relevant solution."
[] Contact: Logitech Ltd., tel~fax: [44] (0) 389 75444 /79O42. of Thin Film and IonTechnology at the Research Centre Jtilich, G e r m a n y , have shown that a defect made deliberately in the crystal structure of a superconductor creates the best conditions for a high-grade SQUID from ceramic HTSCs. SQUIDS were made from very thin HTSC films
a c c o r d i n g to a process recently developed in the USA: a substrate of strontium provided with steps a few nm in height by ion milling. A similarly thin film of ceramic YBa2Cu307 superconductor was then deposited on this substrate by laser. The steps must exhibit a defined geometrical shape,
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I~:~i~::~i~i~:i~i~i~::.i:, :i~:~:i~:i~ i:~ :|::~{~i :~i~i : ~~i'{~~~:!.i~~i'':~i~::~:~i'~i{~:~:{~ii'~'ill,i:i~i~' i:~ii~' i:~~'~:i~{i{i i~i :~illi{i~{i:i:~: ~i~:i~ ' i!~iii~i iiiliii~i~~i:~~ii~~i i:~ili~ i¢i~~iili~:ii~ ::~i{i~'i~i!i/{~ i':i!i!~i i~i::i~:~i!~~!i :/i~:/~:~i~:;::: i:~:1]
Homo-epi diamond A team at Naval Research Labs (NRL), Washington DC, reported homo-epitaxial growth o f d i a m o n d using an o x y - a c e t y l e n e flame in air. In J. of Cryst. Growth (July 1991), KA Snail and LM Hanssen claim that the growth temperatures (11501500C) and growth rates (100-200tam/h) are the highest so far reported. The crystals were grown on ram-size natural diamond seeds and optical inspection showed the original cylindrical seed crystals growing onto p o l y h e d r a l shapes with identifiable crystal faces. Other measurements confirm the epitaxial nature of the deposition.
Hitachi poly diamond A collaboration between workers at Hitachi Research Labs and the Institute of Applied Sciences at Rouen, France, has reported successful deposition of diamond films in CO2/H2 and CO/CO2/H2 systems. In J. Cryst. Growth (July 1991) Y. Muranaka et ah from Hitachi and Lionel Breuilly of IAS, were able to synthesise a variety of films in CO/CO~/H~ systems and the films were found to consist of polycrystallates and poly acetylene c o m p o n e n t s . T h e crystallinity could, they noted, be improved by the increase of CO2 concentrations (up to 4.8%) which leads to an increase of O> atomic hydrogen and OH species.
HTSCs at KFA JiJlich The Institute of Solid State Research and the Institute
Logitech Precision Lap & Polish System
this was assessed by TEM. The atomic structure of the HTSC twice changes direction on suitably produced steps of the substrate, i.c. the atomic layers are tilted at right angles along welldefined lines. The crystal i m p e r f e c t i o n s thus pro duced, i.e. two 90' gram boundaries, lorm the desired micro-bridge. They o b v i o u s l y w e a k e n the HTSC properties within a region of a few atomic layers of thickness to a well-defined extent precisely suitable [br the application purpose. This opens a possibility for integrated configurations of a large number of SQUIDS on a single chip, Other K FA Julich workers have made significant steps in the understanding of HTSCs. Significant progress has been achieved at the H L R Z supercomputer Centre in Jtilich conc e r n i n g the t h e o r e t i c a l understanding of HTSCs. Ingo Morgenstern, Martin Frick, and Wolfgang Von der Linden, succeeded in numerically demonstrating high t e m p e r a t u r e superconduction in a special electron-phonon model using ~t C R A Y - M P 8 3 2 supercomputer.
7he PM4 precA'ion lapping and poh~'hing machine/i'om l ogitech
The PM4 from Logitech, Glasgow, UK, is a "new generation precision lapping and polishing machine offering significant refinements and benefits for all materials processing applications." The PM4 offers a number of refinements over its predecessors: • Convenient membrane touch panel lbr all functions: • Infinitely variable plate speed from 0 to 70rpm; • Automatic timer control with override; • Abrasive autofeed control from touch panel so operator does not have to reach over work; • Easily regulated reciprocation action - sweep speed variable from 0 to 45 c/min; • Refined slurry chute which feeds the slurry to the lapping plate without blocking or dripping on the wrong place: • New removable drip tray. Material applications are broad - typically when semiconductors need to be back-thinned or fiat polished etc. Whenever there is a need for a controlled fiat surface with a high quality finish then the PM4 will "undoubtedly be a relevant solution."
[] Contact: Logitech Ltd., tel~fax: [44] (0) 389 75444 /79O42. of Thin Film and IonTechnology at the Research Centre Jtilich, G e r m a n y , have shown that a defect made deliberately in the crystal structure of a superconductor creates the best conditions for a high-grade SQUID from ceramic HTSCs. SQUIDS were made from very thin HTSC films
a c c o r d i n g to a process recently developed in the USA: a substrate of strontium provided with steps a few nm in height by ion milling. A similarly thin film of ceramic YBa2Cu307 superconductor was then deposited on this substrate by laser. The steps must exhibit a defined geometrical shape,
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