- Email: [email protected]
Contents MBE XIII
13th International Conference on Molecular Beam Epitaxy MBE XIII Preface T.S. Jones
1
I. Plenary session The opportunities, successes and challenges for GaInNAsSb J.S. Harris
3
MBE growth and properties of epitaxial metal oxides for high-k dielectrics H.J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky and A. Fissel
18
Spintronics: recent progress and tomorrow’s challenges M. Tanaka
25
II. Self organised nanostructures Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, G. Katsaros, R. Songmuang, O.G. Schmidt, H.v. K.anel and K. Kern
38
Intermixing in self-assembled InAs quantum dot formation C. Heyn, A. Bolz, T. Maltezopoulos, R.L. Johnson and W. Hansen
46
PL characteristics of InAs quantum dots with Sb irradiation in growth interruption T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata and F. Koyama
51
Indium segregation during multilayer InAs/GaAs(0 0 1) quantum dot formation P. Howe, E.C. Le Ru, R. Murray and T.S. Jones
57
Defect-free 50-layer strain-balanced InAs quantum dots grown on InAlGaAs/InP for infrared photodetector applications Z.H. Zhang, C.F. Xu, K.C. Hsieh and K.Y. Cheng
61
InAs/InP quantum dots emitting in the 1.55 mm wavelength region by inserting ultrathin GaAs and GaP interlayers Q. Gong, R. No. tzel, P.J. van Veldhoven and J.H. Wolter
67
Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers S.V. Ivanov, A.N. Semenov, V.A. Solov’ev, O.G. Lyublinskaya, Y.V. Terent’ev, B.Y. Meltser, L.G. Prokopova, A.A. Sitnikova, A.A. Usikova, A.A. Toropov and P.S. Kop’ev
72
Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0 0 1) substrates H. Lichtenberger, M. Mu. hlberger, C. Schelling and F. Sch.affler
78
0022-0248/$ - see front matter doi:10.1016/S0022-0248(05)00410-0
viii
Contents
Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (0 0 1) substrates V. Poydenot, R. Dujardin, F. Fournel, J.L. Rouvi"ere and A. Barski
83
Ordering of quantum dot molecules by self-organization T.v. Lippen, R. No. tzel, G.J. Hamhuis and J.H. Wolter
88
Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs T. Sugaya, T. Yamane, M. Ogura, K. Komori and K. Yonei
94
Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode I. Kamiya, I. Tanaka, Y. Tada, M. Azuma, K. Uno and H. Sakaki
98
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region M.J. da Silva, A.A. Quivy, S. Martini, T.E. Lamas, E.C.F. da Silva and J.R. Leite
103
Nanometer-scale GaAs ring structure grown by droplet epitaxy T. Mano and N. Koguchi
108
Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates M.E. Ikpi, P. Atkinson, S.P. Bremner and D.A. Ritchie
113
Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures B.Y. Meltser, V.A. Solov’ev, O.G. Lyublinskaya, A.A. Toropov, Y.V. Terent’ev, A.N. Semenov, A.A. Sitnikova and S.V. Ivanov
119
Formation process of and lattice parameter variation in InAs/GaAs quantum dots dependent on the growth parameters M.D. Kim, T.W. Kim, Y.D. Woo, S.G. Kim and J.S. Hong
125
Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots H.J. Parry, M.J. Ashwin, J.H. Neave and T.S. Jones
131
Phosphorus-mediated growth of Ge quantum dots on Si(0 0 1) J. Qin, F. Xue, Y. Wang, L.H. Bai, J. Cui, X.J. Yang, Y.L. Fan and Z.M. Jiang
136
Near-infrared gain in GaSb quantum dots in Si grown by MBE M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto and S. Fukatsu
142
MBE-grown Au-island-catalyzed ZnSe nanowires S.K. Chan, Y. Cai, I.K. Sou and N. Wang
146
Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures M. Guti!errez, M. Hopkinson, H.Y. Liu, M. Herrera, D. Gonz!alez and R. Garc!ıa
151
Contents
ix
III. Antimonide heterostructures and devices Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors M. Walther, J. Schmitz, R. Rehm, S. Kopta, F. Fuchs, J. Fleiner, W. Cabanski and J. Ziegler
156
The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE I. Shibasaki, H. Geka, A. Okamoto and Y. Shibata
162
MBE growth optimization of Sb-based interband cascade lasers C.J. Hill and R.Q. Yang
167
Heat management of MBE-grown antimonide lasers C. Zhu, Y.G. Zhang, A.Z. Li, Y.L. Zheng and T. Tang
173
Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy T. Mozume and J. Kasai
178
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers J. Kasai and T. Mozume
183
Growth of dilute GaNSb by plasma-assisted MBE L. Buckle, B.R. Bennett, S. Jollands, T.D. Veal, N.R. Wilson, B.N. Murdin, C.F. McConville and T. Ashley
188
Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(0 0 1) substrates C. Renard, X. Marcadet, J. Massies and O. Parillaud
193
InAs/GaSb type-II superlattices for high performance mid-infrared detectors H.J. Haugan, G.J. Brown, F. Szmulowicz, L. Grazulis, W.C. Mitchel, S. Elhamri and W.D. Mitchell
198
Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary A.N. Semenov, V.A. Solov’ev, B.Y. Meltser, Y.V. Terent’ev, L.G. Prokopova and S.V. Ivanov
203
Low-temperature growth and post-growth annealing of GaAsSb J. Sigmund and H.L. Hartnagel
209
IV. Dilute nitrides Thermal annealing effects and local atomic configurations in GaInNAs thin films K. Uno, M. Yamada, I. Tanaka, O. Ohtsuki and T. Takizawa
214
Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures R. Hey, Y.-J. Han, M. Giehler, M. Ramsteiner, H.T. Grahn and K.H. Ploog
219
Low threshold InGaAsN/GaAs lasers beyond 1500 nm G. Jaschke, R. Averbeck, L. Geelhaar and H. Riechert
224
Nitrogen plasma optimization for high-quality dilute nitrides M.A. Wistey, S.R. Bank, H.B. Yuen, H. Bae and J.S. Harris
229
x
Contents
InGaAsN on GaAs (1 1 1)B for telecommunication laser application J. Miguel-S!anchez, A. Guzm!an, J.M. Ulloa, A. Hierro and E. Mun˜oz
234
Dilute nitride absorbers in passive devices for mode locking of solid-state lasers S. Scho. n, A. Rutz, V. Liverini, R. Grange, M. Haiml, S.C. Zeller and U. Keller
239
Excitation power dependent photoluminescence of In0.7Ga0.3As1@xNx quantum dots grown on GaAs (0 0 1) A. Nishikawa, R. Katayama, K. Onabe, Y.G. Hong and C.W. Tu
244
A possibility of In–N fragments incorporation in InGaAsN MBE growth T. Yamaguchi, M. Uchida, A. Yamamoto and A. Hashimoto
249
Growth and characterization of InAsN alloy films and quantum wells M. Kuroda, A. Nishikawa, R. Katayama and K. Onabe
254
Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing C.S. Peng, H.F. Liu, J. Konttinen and M. Pessa
259
V. II-VI materials and heterostructures MBE growth of wide band gap wurtzite MgZnO quasialloys with MgO/ZnO superlattices for deep ultraviolet optical functions S. Fujita, H. Tanaka and S. Fujita
264
The effects of thermal treatments on the electrical properties of phosphorus doped ZnO layers grown by MBE H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu and S. Niki
268
Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices M. Kobayashi, J. Ueno, M. Enami, S. Katsuta, A. Ichiba, K. Ogura, K. Onomitsu and Y. Horikoshi
273
N-type doping of zinc selenide using a silver iodide thermal effusion source J.K. Morrod, T.C.M. Graham, K.A. Prior and B.C. Cavenett
278
Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures I.K. Sou, C. Wang, S.K. Chan and G.K.L. Wong
282
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue and M. Yano
288
Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer M. Fujita, M. Sasajima, Y. Deesirapipat and Y. Horikoshi
293
Contents
xi
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy Y.M. Lu, C.X. Wu, Z.P. Wei, Z.Z. Zhang, D.X. Zhao, J.Y. Zhang, Y.C. Liu, D.Z. Shen and X.W. Fan
299
Investigation of growth mode in ZnO thin films prepared at different temperature by plasmamolecular beam epitaxy H.W. Liang, Y.M. Lu, D.Z. Shen, J.F. Yan, B.H. Li, J.Y. Zhang, Y.C. Liu and X.W. Fan
305
Interface disorder of Zn1@xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations S.H. Park, J.H. Chang, M.N. Jung, Y.K. Park, K. Goto and T. Yao
311
Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy E. Roventa, G. Alexe, R. Kro. ger, D. Hommel and A. Rosenauer
316
Excitation intensity dependence of up-converted emission in ZnSe–ZnTe superlattice grown by MBE M. Ohashi, Y. Ichinohe, G. Shigaura, Y. Sasaki, Y. Chikarayumi, N. Kimura, N. Kimura, T. Sawada, K. Suzuki, K. Imai, H. Saito, P.A. Trubenko and Y.V. Korostelin
320
Epitaxial lift-off of MBE grown II–VI heterostructures using a novel MgS release layer C. Bradford, A. Currran, A. Balocchi, B.C. Cavenett, K.A. Prior and R.J. Warburton
325
VI. Quantum dot devices Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mm on InP(3 1 1)B substrates P. Caroff, C. Platz, O. Dehaese, C. Paranthoe¨n, N. Bertru, A. Le Corre and S. Loualiche
329
High-power 1.3 mm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system A. Wilk, A.R. Kovsh, S.S. Mikhrin, C. Chaix, I.I. Novikov, M.V. Maximov, Y.M. Shernyakov, V.M. Ustinov and N.N. Ledentsov
335
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa Z. Xie, F. Wei, H. Cao and G.S. Solomon
342
InP-based quantum dash lasers for wide gain bandwidth applications S. Deubert, A. Somers, W. Kaiser, R. Schwertberger, J.P. Reithmaier and A. Forchel
346
High responsivity quantum-dot infrared photodetector with Al0.1Ga0.9As blocking layers at both sides of the structure S.-Y. Lin, J.-Y. Chi and S.-C. Lee
351
VII. Nitrides Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0 0 0 1) T. Ive, O. Brandt and K.H. Ploog
355
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy S.E. Hooper, M. Kauer, V. Bousquet, K. Johnson, C. Zellweger and J. Heffernan
361
xii
Contents
Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1) E. Dimakis, K. Tsagaraki, E. Iliopoulos, P. Komninou, T. Kehagias, A. Delimitis and A. Georgakilas
367
InN layers grown on silicon substrates: effect of substrate temperature and buffer layers J. Grandal and M.A. S!anchez-Garc!ıa
373
Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE X.Q. Shen, M. Shimizu, T. Yamamoto, Y. Honda and H. Okumura
378
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J.-P. Faurie
383
Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella and T.D. Moustakas
387
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1) Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Lau. gt, O. Tottereau, P. Vennegues and J. Massies
393
Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications X.Y. Liu, J.F. F.alth, T.G. Andersson, P. Holmstro. m, P. J.anes, U. Ekenberg and L. Thyl!en
397
Band gap widening of MBE grown InN layers by impurity incorporation Y. Uesaka, A. Yamamoto and A. Hashimoto
402
Influence of dislocation density on photoluminescence intensity of GaN J.F. F.alth, M.N. Gurusinghe, X.Y. Liu, T.G. Andersson, I.G. Ivanov, B. Monemar, H.H. Yao and S.C. Wang
406
Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE R. Kimura, T. Suzuki, M. Ouchi, K. Ishida and K. Takahashi
411
Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy M. Cervantes-Contreras, C.A. Quezada-Maya, M. Lo! pez-Lo! pez, G. Gonz!alez de la Cruz, M. Tamura and T. Yodo
415
Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure R.-M. Lin, C.-H. Lin, J.-C. Wang, T.-E. Nee, B.-R. Fang and R.-Y. Wang
421
Contents
xiii
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis and A. Georgakilas
426
Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(0 0 1) substrates with relatively thin low-temperature GaN buffer layer R. Katayama and K. Onabe
431
Growth of BxAl1@xN layers using decaborane on SiC substrates A. Nakajima, Y. Furukawa, H. Yokoya and H. Yonezu
437
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R. Wasilewski, I. Sproule, S. Grzanka, R. Jakie"a, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. Bo!ckowski and S. Porowski
443
VIII. Surface studies Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction W. Braun, V.M. Kaganer, B. Jenichen, D.K. Satapathy, X. Guo, B.P. Tinkham and K.H. Ploog
449
A comparison between GaAs and AlAs deposition on patterned substrates R.S. Williams, M.J. Ashwin, T.S. Jones and J.H. Neave
458
Phosphorous-beam free InP substrate cleaning for MBE H. Bando, H. Yoshino, H. Okamoto and K. Iizuka
464
First-principles investigations of surface reconstructions of an InAs(1 1 1)B surface A. Taguchi
468
Daily calibration of InAs growth rates using pyrometry I. Farrer and D.A. Ritchie
473
RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge–buffer layer K. Minami, J. Jogo, Y. Morishita, T. Ishibashi and K. Sato
478
GaAs facet formation and progression during MBE overgrowth of patterned mesas P. Atkinson and D.A. Ritchie
482
IX. Growth on silicon SiGe quantum cascade structures for light emitting devices J. Zhang, X.B. Li, J.H. Neave, D.J. Norris, A.G. Cullis, R.W. Kelsall, S. Lynch, P. Towsend, D.J. Paul and P.F. Fewster
488
Structural studies of strain-symmetrised modulation-doped Si/SiGe structures grown by molecular beam epitaxy C.V. Falub, M. Medun$ a, E. Mu. ller, S. Tsujino, A. Borak, H. Sigg, D. Gru. tzmacher, T. Fromherz and G. Bauer
495
xiv
Contents
First-principles study on crystal and electronic structures of stacking-fault tetrahedra in epitaxialized Si films R. Kobayashi and T. Nakayama
500
GSMBE growth and structural characterisation of SiGeC layers for HBT J. Zhang, J.H. Neave, X.B. Li, P.F. Fewster, H.A.W. El Mubarek, P. Ashburn, I.Z. Mitrovic, O. Buiu and S. Hall
505
Triggered luminescence in a strained Si1@xGex/Si single quantum well with surface as an electron reservoir N. Yasuhara and S. Fukatsu
512
X. III-V heterostructures High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (0 0 1) X. Wallart, B. Pinsard and F. Mollot
516
Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy M. Ohta, T. Miyamoto, T. Kageyama, T. Matsuura, Y. Matsui, T. Furuhata and F. Koyama
521
Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission M.P. Semtsiv, M. Ziegler, S. Dressler, W.T. Masselink, N. Georgiev, T. Dekorsy and M. Helm
526
Hall electron mobility versus N spatial distribution in III–V–N systems A. Hashimoto, T. Yamaguchi, T. Suzuki and A. Yamamoto
532
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases F. Capotondi, G. Biasiol, D. Ercolani and L. Sorba
538
Growth of AlAsSb/InGaAs MBE-layers for all-optical switches P. Cristea, Y. Fedoryshyn and H. J.ackel
544
Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy S.D. Wu, W.X. Wang, L.W. Guo, Z.H. Li, X.Z. Shang, F. Liu, Q. Huang and J.M. Zhou
548
Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada
553
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mm (InyGa1@yAs/GaAs1@x Sbx)/GaAs bilayer quantum wells Z.C. Niu, X.H. Xu, H.Q. Ni, Y.Q. Xu, Z.H. He, Q. Han and R.H. Wu
558
As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system S. Dhellemmes, S. Godey, A. Wilk, X. Wallart and F. Mollot
564
STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates T. Noda, N. Sumida, S. Koshiba, S. Nishioka, Y. Negi, E. Okunishi, Y. Akiyama and H. Sakaki
569
Contents
xv
Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of xX3% grown by molecular beam epitaxy T.S. Lay, E.Y. Lin, C.Y. Chang, K.M. Kong, L.P. Chen, T.Y. Chang, J.S. Wang, G. Lin and J.Y. Chi
575
Raman scattering in AlAs/GaP and AlAs/AlP strained short-period superlattices M. Nagano and R. Sugie
580
Photoluminescence properties of Be-doped GaAs/(Al0.2Ga0.8)0.51In0.49P heterostructures subjected to annealing processes V.H. M!endez-Garc!ıa, J.F. Garc!ıa-Motolin!ıa, A.E. Esparza-Garc!ıa and I.C. Hern!andez
585
Photoreflectance investigations of HEMT structures grown by MBE L. Zamora-Peredo, M. Lo! pez-Lo! pez, A. Lastras-Mart!ınez and V.H. M!endez-Garc!ıa
591
Growth of InP high electron mobility transistor structures with Te doping B.R. Bennett, T. Suemitsu, N. Waldron and J.A. del Alamo
596
CBr4 and Be heavily doped InGaAs grown in a production MBE system S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune and F. Mollot
600
Transport properties of InSb and InAs thin films on GaAs substrates A. Okamoto, H. Geka, I. Shibasaki and K. Yoshida
604
Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP H. Bando, M. Kosuge, K. Ban, H. Yoshino, R. Takahashi, H. Okamoto, T. Okuno and Y. Masumoto
610
Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE H. Geka, I. Shibasaki and A. Okamoto
614
XI. Novel materials and structures MBE-grown high k gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nanoelectronics W.C. Lee, Y.J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, S.Y. Lin, T. Gustffson, M. Hong and J. Kwo
619
Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy T.S. Lay, Y.Y. Liao, W.H. Hung, J. Kwo and J.P. Mannaerts
624
Surface diffusion during layer growth of SrTiO3 films with pulsed laser molecular beam epitaxy Y.R. Li, S.W. Jiang, Y. Zhang, X.W. Deng and X.H. Wei
629
Mechanical and optical characteristics of Al-doped C60 films J. Nishinaga, T. Aihara, H. Yamagata and Y. Horikoshi
633
Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)Fstructure and electrical properties C.P. Chen, M. Hong, J. Kwo, H.M. Cheng, Y.L. Huang, S.Y. Lin, J. Chi, H.Y. Lee, Y.F. Hsieh and J.P. Mannaerts
638
xvi
Contents
Surface modification of Si substrates by CdF2 molecular beam for stable growth of fluoride ultrathin heterostructures M. Maeda, J. Omae, S. Watanabe, Y. Toriumi and K. Tsutsui
643
XII. Spintronics Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(1 1 1)B substrates R. Nakane, J. Kondo, M.W. Yuan, S. Sugahara and M. Tanaka
649
Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures X.X. Guo, C. Herrmann, X. Kong, D. Kolovos-Vellianitis, L. D.aweritz and K.H. Ploog
655
Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells Y.G. Sadofyev, A. Ramamoorthy, J.P. Bird, S.R. Johnson and Y.-H. Zhang
661
Epitaxial growth of Fe3Si/GaAs (0 0 1) hybrid structures for spintronic application J. Herfort, H.-P. Scho. nherr, A. Kawaharazuka, M. Ramsteiner and K.H. Ploog
666
Excitonic transitions in (Ga1@xMnx)N thin films with high Curie temperature H.C. Jeon, J.A. Lee, Y. Shon, S.J. Lee, T.W. Kang, T.W. Kim, Y. Kee Yeo, Y. Hun Cho and M.-D. Kim
671
Magnetic, optical and transport properties of GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures M.S. Kim, Y.K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
675
Chirped multiple InAs quantum dot structure for wide spectrum device applications L.H. Li, M. Rossetti and A. Fiore
680
Molecular beam epitaxy of p-type cubic GaMnN layers C.T. Foxon, S.V. Novikov, L.X. Zhao, K.W. Edmonds, A.D. Giddings, K.Y. Wang, R.P. Campion, C.R. Staddon, M.W. Fay, Y. Han, P.D. Brown, M. Sawicki and B.L. Gallagher
685
Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system M. Reinwald, U. Wurstbauer, M. Do. ppe, W. Kipferl, K. Wagenhuber, H.-P. Tranitz, D. Weiss and W. Wegscheider
690
Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy J. Ib!an˜ez, K.W. Edmonds, M. Henini, L. Eaves, D. Pastor, R. Cusco! , L. Artu! s and H. Akinaga
695
Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama and Y. Horikoshi
699
XIII. Optoelectronic devices MBE growth of mid-IR type-II interband laser diodes J. Schmitz, C. Mermelstein, R. Kiefer, M. Walther and J. Wagner
704
Contents
xvii
GSMBE growth of GaInAsP/InP 1.3 mm-TM-lasers for monolithic integration with optical waveguide isolator F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets and J.L. Gentner
709
High-temperature (TX400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers Q.K. Yang, C. Mann, F. Fuchs, K. Ko. hler and W. Bronner
714
Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications J.L. Pau, J. Pereiro, C. Rivera, E. Mun˜oz and E. Calleja
718
Molecular beam epitaxy of vertical-emitting microcavity lasers for the 6–8 micron spectral range operating in continuous-wave mode T. Schwarzl, M. Bo. berl, G. Springholz, E. Kaufmann, J. Roither, W. Heiss, J. Fu. rst and H. Pascher
723
Room temperature 1.25 mm emission from high indium content InxGa1@xAs/GaAs quantum wells grown by molecular beam epitaxy Z.C. Niu, H.Q. Ni, X.H. Xu, Y.Q. Xu, Z.H. He, Q. Han and R.H. Wu
728
Very low threshold current density 1.3 mm GaInNAs single-quantum well lasers grown by molecular beam epitaxy S.M. Wang, Y.Q. Wei, X.D. Wang, Q.X. Zhao, M. Sadeghi and A. Larsson
734
Lead salt mid-IR photodetectors with narrow linewidth M. Arnold, D. Zimin, K. Alchalabi and H. Zogg
739
Increasing the spectral separation between the emission lines from individual CdSe quantum dots through annealing T.C.M. Graham, X. Tang, K.A. Prior, B.C. Cavenett and R.J. Warburton
743
Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy Y.Q. Wei, S.M. Wang, X.D. Wang, Q.X. Zhao, M. Sadeghi, I. T(angring and A. Larsson
747
Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector A. Vainionp.aa. , S. Suomalainen, A. Isom.aki, O. Tengvall, M. Pessa and O.G. Okhotnikov
751
XIV. Cascade lasers MBE growth of terahertz quantum cascade lasers H.E. Beere, J.C. Fowler, J. Alton, E.H. Linfield, D.A. Ritchie, R. Ko. hler, A. Tredicucci, G. Scalari, L. Ajili, J. Faist and S. Barbieri
756
Comparison of strain-compensated quantum cascade lasers grown with GaInAs and InP waveguides G. Boehm, A. Friedrich, G. Scarpa, R. Meyer and M.-C. Amann
765
xviii
Contents
Low threshold distribution feedback quantum cascade lasers at 7.6 mm grown by gas source molecular beam epitaxy A.Z. Li, G.Y. Xu, Y.G. Zhang, H. Li and X. Zhang
770
Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions S. Ho. fling, R. Kallweit, J. Seufert, J. Koeth, J.P. Reithmaier and A. Forchel
775
Continuous-wave operation quantum cascade lasers at 7.95 mm G.Y. Xu, A.Z. Li, Y.G. Zhang and H. Li
780
Author Index
785
Subject Index
799
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com
1
I. Plenary session The opportunities, successes and challenges for GaInNAsSb J.S. Harris
3
MBE growth and properties of epitaxial metal oxides for high-k dielectrics H.J. Osten, E. Bugiel, O. Kirfel, M. Czernohorsky and A. Fissel
18
Spintronics: recent progress and tomorrow’s challenges M. Tanaka
25
II. Self organised nanostructures Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems G. Costantini, A. Rastelli, C. Manzano, P. Acosta-Diaz, G. Katsaros, R. Songmuang, O.G. Schmidt, H.v. K.anel and K. Kern
38
Intermixing in self-assembled InAs quantum dot formation C. Heyn, A. Bolz, T. Maltezopoulos, R.L. Johnson and W. Hansen
46
PL characteristics of InAs quantum dots with Sb irradiation in growth interruption T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata and F. Koyama
51
Indium segregation during multilayer InAs/GaAs(0 0 1) quantum dot formation P. Howe, E.C. Le Ru, R. Murray and T.S. Jones
57
Defect-free 50-layer strain-balanced InAs quantum dots grown on InAlGaAs/InP for infrared photodetector applications Z.H. Zhang, C.F. Xu, K.C. Hsieh and K.Y. Cheng
61
InAs/InP quantum dots emitting in the 1.55 mm wavelength region by inserting ultrathin GaAs and GaP interlayers Q. Gong, R. No. tzel, P.J. van Veldhoven and J.H. Wolter
67
Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers S.V. Ivanov, A.N. Semenov, V.A. Solov’ev, O.G. Lyublinskaya, Y.V. Terent’ev, B.Y. Meltser, L.G. Prokopova, A.A. Sitnikova, A.A. Usikova, A.A. Toropov and P.S. Kop’ev
72
Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(0 0 1) substrates H. Lichtenberger, M. Mu. hlberger, C. Schelling and F. Sch.affler
78
0022-0248/$ - see front matter doi:10.1016/S0022-0248(05)00410-0
viii
Contents
Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (0 0 1) substrates V. Poydenot, R. Dujardin, F. Fournel, J.L. Rouvi"ere and A. Barski
83
Ordering of quantum dot molecules by self-organization T.v. Lippen, R. No. tzel, G.J. Hamhuis and J.H. Wolter
88
Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs T. Sugaya, T. Yamane, M. Ogura, K. Komori and K. Yonei
94
Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode I. Kamiya, I. Tanaka, Y. Tada, M. Azuma, K. Uno and H. Sakaki
98
Large InAs/GaAs quantum dots with an optical response in the long-wavelength region M.J. da Silva, A.A. Quivy, S. Martini, T.E. Lamas, E.C.F. da Silva and J.R. Leite
103
Nanometer-scale GaAs ring structure grown by droplet epitaxy T. Mano and N. Koguchi
108
Distribution of self-assembled InAs dots on patterned GaAs (1 0 0) substrates M.E. Ikpi, P. Atkinson, S.P. Bremner and D.A. Ritchie
113
Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures B.Y. Meltser, V.A. Solov’ev, O.G. Lyublinskaya, A.A. Toropov, Y.V. Terent’ev, A.N. Semenov, A.A. Sitnikova and S.V. Ivanov
119
Formation process of and lattice parameter variation in InAs/GaAs quantum dots dependent on the growth parameters M.D. Kim, T.W. Kim, Y.D. Woo, S.G. Kim and J.S. Hong
125
Growth of InAs/InP(0 0 1) nanostructures: The transition from quantum wires to quantum dots H.J. Parry, M.J. Ashwin, J.H. Neave and T.S. Jones
131
Phosphorus-mediated growth of Ge quantum dots on Si(0 0 1) J. Qin, F. Xue, Y. Wang, L.H. Bai, J. Cui, X.J. Yang, Y.L. Fan and Z.M. Jiang
136
Near-infrared gain in GaSb quantum dots in Si grown by MBE M. Jo, N. Yasuhara, Y. Sugawara, K. Kawamoto and S. Fukatsu
142
MBE-grown Au-island-catalyzed ZnSe nanowires S.K. Chan, Y. Cai, I.K. Sou and N. Wang
146
Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures M. Guti!errez, M. Hopkinson, H.Y. Liu, M. Herrera, D. Gonz!alez and R. Garc!ıa
151
Contents
ix
III. Antimonide heterostructures and devices Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors M. Walther, J. Schmitz, R. Rehm, S. Kopta, F. Fuchs, J. Fleiner, W. Cabanski and J. Ziegler
156
The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE I. Shibasaki, H. Geka, A. Okamoto and Y. Shibata
162
MBE growth optimization of Sb-based interband cascade lasers C.J. Hill and R.Q. Yang
167
Heat management of MBE-grown antimonide lasers C. Zhu, Y.G. Zhang, A.Z. Li, Y.L. Zheng and T. Tang
173
Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy T. Mozume and J. Kasai
178
Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers J. Kasai and T. Mozume
183
Growth of dilute GaNSb by plasma-assisted MBE L. Buckle, B.R. Bennett, S. Jollands, T.D. Veal, N.R. Wilson, B.N. Murdin, C.F. McConville and T. Ashley
188
Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(0 0 1) substrates C. Renard, X. Marcadet, J. Massies and O. Parillaud
193
InAs/GaSb type-II superlattices for high performance mid-infrared detectors H.J. Haugan, G.J. Brown, F. Szmulowicz, L. Grazulis, W.C. Mitchel, S. Elhamri and W.D. Mitchell
198
Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary A.N. Semenov, V.A. Solov’ev, B.Y. Meltser, Y.V. Terent’ev, L.G. Prokopova and S.V. Ivanov
203
Low-temperature growth and post-growth annealing of GaAsSb J. Sigmund and H.L. Hartnagel
209
IV. Dilute nitrides Thermal annealing effects and local atomic configurations in GaInNAs thin films K. Uno, M. Yamada, I. Tanaka, O. Ohtsuki and T. Takizawa
214
Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures R. Hey, Y.-J. Han, M. Giehler, M. Ramsteiner, H.T. Grahn and K.H. Ploog
219
Low threshold InGaAsN/GaAs lasers beyond 1500 nm G. Jaschke, R. Averbeck, L. Geelhaar and H. Riechert
224
Nitrogen plasma optimization for high-quality dilute nitrides M.A. Wistey, S.R. Bank, H.B. Yuen, H. Bae and J.S. Harris
229
x
Contents
InGaAsN on GaAs (1 1 1)B for telecommunication laser application J. Miguel-S!anchez, A. Guzm!an, J.M. Ulloa, A. Hierro and E. Mun˜oz
234
Dilute nitride absorbers in passive devices for mode locking of solid-state lasers S. Scho. n, A. Rutz, V. Liverini, R. Grange, M. Haiml, S.C. Zeller and U. Keller
239
Excitation power dependent photoluminescence of In0.7Ga0.3As1@xNx quantum dots grown on GaAs (0 0 1) A. Nishikawa, R. Katayama, K. Onabe, Y.G. Hong and C.W. Tu
244
A possibility of In–N fragments incorporation in InGaAsN MBE growth T. Yamaguchi, M. Uchida, A. Yamamoto and A. Hashimoto
249
Growth and characterization of InAsN alloy films and quantum wells M. Kuroda, A. Nishikawa, R. Katayama and K. Onabe
254
Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing C.S. Peng, H.F. Liu, J. Konttinen and M. Pessa
259
V. II-VI materials and heterostructures MBE growth of wide band gap wurtzite MgZnO quasialloys with MgO/ZnO superlattices for deep ultraviolet optical functions S. Fujita, H. Tanaka and S. Fujita
264
The effects of thermal treatments on the electrical properties of phosphorus doped ZnO layers grown by MBE H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu and S. Niki
268
Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices M. Kobayashi, J. Ueno, M. Enami, S. Katsuta, A. Ichiba, K. Ogura, K. Onomitsu and Y. Horikoshi
273
N-type doping of zinc selenide using a silver iodide thermal effusion source J.K. Morrod, T.C.M. Graham, K.A. Prior and B.C. Cavenett
278
Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures I.K. Sou, C. Wang, S.K. Chan and G.K.L. Wong
282
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications K. Koike, K. Hama, I. Nakashima, G.-y. Takada, K.-i. Ogata, S. Sasa, M. Inoue and M. Yano
288
Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer M. Fujita, M. Sasajima, Y. Deesirapipat and Y. Horikoshi
293
Contents
xi
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy Y.M. Lu, C.X. Wu, Z.P. Wei, Z.Z. Zhang, D.X. Zhao, J.Y. Zhang, Y.C. Liu, D.Z. Shen and X.W. Fan
299
Investigation of growth mode in ZnO thin films prepared at different temperature by plasmamolecular beam epitaxy H.W. Liang, Y.M. Lu, D.Z. Shen, J.F. Yan, B.H. Li, J.Y. Zhang, Y.C. Liu and X.W. Fan
305
Interface disorder of Zn1@xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations S.H. Park, J.H. Chang, M.N. Jung, Y.K. Park, K. Goto and T. Yao
311
Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy E. Roventa, G. Alexe, R. Kro. ger, D. Hommel and A. Rosenauer
316
Excitation intensity dependence of up-converted emission in ZnSe–ZnTe superlattice grown by MBE M. Ohashi, Y. Ichinohe, G. Shigaura, Y. Sasaki, Y. Chikarayumi, N. Kimura, N. Kimura, T. Sawada, K. Suzuki, K. Imai, H. Saito, P.A. Trubenko and Y.V. Korostelin
320
Epitaxial lift-off of MBE grown II–VI heterostructures using a novel MgS release layer C. Bradford, A. Currran, A. Balocchi, B.C. Cavenett, K.A. Prior and R.J. Warburton
325
VI. Quantum dot devices Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mm on InP(3 1 1)B substrates P. Caroff, C. Platz, O. Dehaese, C. Paranthoe¨n, N. Bertru, A. Le Corre and S. Loualiche
329
High-power 1.3 mm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system A. Wilk, A.R. Kovsh, S.S. Mikhrin, C. Chaix, I.I. Novikov, M.V. Maximov, Y.M. Shernyakov, V.M. Ustinov and N.N. Ledentsov
335
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa Z. Xie, F. Wei, H. Cao and G.S. Solomon
342
InP-based quantum dash lasers for wide gain bandwidth applications S. Deubert, A. Somers, W. Kaiser, R. Schwertberger, J.P. Reithmaier and A. Forchel
346
High responsivity quantum-dot infrared photodetector with Al0.1Ga0.9As blocking layers at both sides of the structure S.-Y. Lin, J.-Y. Chi and S.-C. Lee
351
VII. Nitrides Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0 0 0 1) T. Ive, O. Brandt and K.H. Ploog
355
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy S.E. Hooper, M. Kauer, V. Bousquet, K. Johnson, C. Zellweger and J. Heffernan
361
xii
Contents
Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0 0 0 1) E. Dimakis, K. Tsagaraki, E. Iliopoulos, P. Komninou, T. Kehagias, A. Delimitis and A. Georgakilas
367
InN layers grown on silicon substrates: effect of substrate temperature and buffer layers J. Grandal and M.A. S!anchez-Garc!ıa
373
Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0 0 0 1) substrates by RF-MBE X.Q. Shen, M. Shimizu, T. Yamamoto, Y. Honda and H. Okumura
378
Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(1 1 1) and GaN templates Y. Cordier, M. Hugues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart and J.-P. Faurie
383
Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption I. Friel, K. Driscoll, E. Kulenica, M. Dutta, R. Paiella and T.D. Moustakas
387
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1) Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Lau. gt, O. Tottereau, P. Vennegues and J. Massies
393
Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications X.Y. Liu, J.F. F.alth, T.G. Andersson, P. Holmstro. m, P. J.anes, U. Ekenberg and L. Thyl!en
397
Band gap widening of MBE grown InN layers by impurity incorporation Y. Uesaka, A. Yamamoto and A. Hashimoto
402
Influence of dislocation density on photoluminescence intensity of GaN J.F. F.alth, M.N. Gurusinghe, X.Y. Liu, T.G. Andersson, I.G. Ivanov, B. Monemar, H.H. Yao and S.C. Wang
406
Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF–MBE R. Kimura, T. Suzuki, M. Ouchi, K. Ishida and K. Takahashi
411
Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy M. Cervantes-Contreras, C.A. Quezada-Maya, M. Lo! pez-Lo! pez, G. Gonz!alez de la Cruz, M. Tamura and T. Yodo
415
Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure R.-M. Lin, C.-H. Lin, J.-C. Wang, T.-E. Nee, B.-R. Fang and R.-Y. Wang
421
Contents
xiii
Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis and A. Georgakilas
426
Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(0 0 1) substrates with relatively thin low-temperature GaN buffer layer R. Katayama and K. Onabe
431
Growth of BxAl1@xN layers using decaborane on SiC substrates A. Nakajima, Y. Furukawa, H. Yokoya and H. Yonezu
437
Control of Mg doping of GaN in RF-plasma molecular beam epitaxy A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R. Wasilewski, I. Sproule, S. Grzanka, R. Jakie"a, J. Borysiuk, G. Kamler, E. Litwin-Staszewska, R. Czernecki, M. Bo!ckowski and S. Porowski
443
VIII. Surface studies Surface kinetics of GaAs(0 0 1), InAs(0 0 1) and GaSb(0 0 1) during MBE growth studied by in situ surface X-ray diffraction W. Braun, V.M. Kaganer, B. Jenichen, D.K. Satapathy, X. Guo, B.P. Tinkham and K.H. Ploog
449
A comparison between GaAs and AlAs deposition on patterned substrates R.S. Williams, M.J. Ashwin, T.S. Jones and J.H. Neave
458
Phosphorous-beam free InP substrate cleaning for MBE H. Bando, H. Yoshino, H. Okamoto and K. Iizuka
464
First-principles investigations of surface reconstructions of an InAs(1 1 1)B surface A. Taguchi
468
Daily calibration of InAs growth rates using pyrometry I. Farrer and D.A. Ritchie
473
RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(0 0 1) substrate using Ge–buffer layer K. Minami, J. Jogo, Y. Morishita, T. Ishibashi and K. Sato
478
GaAs facet formation and progression during MBE overgrowth of patterned mesas P. Atkinson and D.A. Ritchie
482
IX. Growth on silicon SiGe quantum cascade structures for light emitting devices J. Zhang, X.B. Li, J.H. Neave, D.J. Norris, A.G. Cullis, R.W. Kelsall, S. Lynch, P. Towsend, D.J. Paul and P.F. Fewster
488
Structural studies of strain-symmetrised modulation-doped Si/SiGe structures grown by molecular beam epitaxy C.V. Falub, M. Medun$ a, E. Mu. ller, S. Tsujino, A. Borak, H. Sigg, D. Gru. tzmacher, T. Fromherz and G. Bauer
495
xiv
Contents
First-principles study on crystal and electronic structures of stacking-fault tetrahedra in epitaxialized Si films R. Kobayashi and T. Nakayama
500
GSMBE growth and structural characterisation of SiGeC layers for HBT J. Zhang, J.H. Neave, X.B. Li, P.F. Fewster, H.A.W. El Mubarek, P. Ashburn, I.Z. Mitrovic, O. Buiu and S. Hall
505
Triggered luminescence in a strained Si1@xGex/Si single quantum well with surface as an electron reservoir N. Yasuhara and S. Fukatsu
512
X. III-V heterostructures High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (0 0 1) X. Wallart, B. Pinsard and F. Mollot
516
Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy M. Ohta, T. Miyamoto, T. Kageyama, T. Matsuura, Y. Matsui, T. Furuhata and F. Koyama
521
Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission M.P. Semtsiv, M. Ziegler, S. Dressler, W.T. Masselink, N. Georgiev, T. Dekorsy and M. Helm
526
Hall electron mobility versus N spatial distribution in III–V–N systems A. Hashimoto, T. Yamaguchi, T. Suzuki and A. Yamamoto
532
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases F. Capotondi, G. Biasiol, D. Ercolani and L. Sorba
538
Growth of AlAsSb/InGaAs MBE-layers for all-optical switches P. Cristea, Y. Fedoryshyn and H. J.ackel
544
Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy S.D. Wu, W.X. Wang, L.W. Guo, Z.H. Li, X.Z. Shang, F. Liu, Q. Huang and J.M. Zhou
548
Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Y. Shimizu, N. Kobayashi, A. Uedono and Y. Okada
553
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mm (InyGa1@yAs/GaAs1@x Sbx)/GaAs bilayer quantum wells Z.C. Niu, X.H. Xu, H.Q. Ni, Y.Q. Xu, Z.H. He, Q. Han and R.H. Wu
558
As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system S. Dhellemmes, S. Godey, A. Wilk, X. Wallart and F. Mollot
564
STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (7 5 7)B substrates T. Noda, N. Sumida, S. Koshiba, S. Nishioka, Y. Negi, E. Okunishi, Y. Akiyama and H. Sakaki
569
Contents
xv
Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of xX3% grown by molecular beam epitaxy T.S. Lay, E.Y. Lin, C.Y. Chang, K.M. Kong, L.P. Chen, T.Y. Chang, J.S. Wang, G. Lin and J.Y. Chi
575
Raman scattering in AlAs/GaP and AlAs/AlP strained short-period superlattices M. Nagano and R. Sugie
580
Photoluminescence properties of Be-doped GaAs/(Al0.2Ga0.8)0.51In0.49P heterostructures subjected to annealing processes V.H. M!endez-Garc!ıa, J.F. Garc!ıa-Motolin!ıa, A.E. Esparza-Garc!ıa and I.C. Hern!andez
585
Photoreflectance investigations of HEMT structures grown by MBE L. Zamora-Peredo, M. Lo! pez-Lo! pez, A. Lastras-Mart!ınez and V.H. M!endez-Garc!ıa
591
Growth of InP high electron mobility transistor structures with Te doping B.R. Bennett, T. Suemitsu, N. Waldron and J.A. del Alamo
596
CBr4 and Be heavily doped InGaAs grown in a production MBE system S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune and F. Mollot
600
Transport properties of InSb and InAs thin films on GaAs substrates A. Okamoto, H. Geka, I. Shibasaki and K. Yoshida
604
Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP H. Bando, M. Kosuge, K. Ban, H. Yoshino, R. Takahashi, H. Okamoto, T. Okuno and Y. Masumoto
610
Electrical properties of InAs thin films grown directly on GaAs(1 0 0) substrates by MBE H. Geka, I. Shibasaki and A. Okamoto
614
XI. Novel materials and structures MBE-grown high k gate dielectrics of HfO2 and (Hf–Al)O2 for Si and III–V semiconductors nanoelectronics W.C. Lee, Y.J. Lee, Y.D. Wu, P. Chang, Y.L. Huang, Y.L. Hsu, J.P. Mannaerts, R.L. Lo, F.R. Chen, S. Maikap, L.S. Lee, W.Y. Hsieh, M.J. Tsai, S.Y. Lin, T. Gustffson, M. Hong and J. Kwo
619
Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3–GaN interfaces by X-ray photoelectron spectroscopy T.S. Lay, Y.Y. Liao, W.H. Hung, J. Kwo and J.P. Mannaerts
624
Surface diffusion during layer growth of SrTiO3 films with pulsed laser molecular beam epitaxy Y.R. Li, S.W. Jiang, Y. Zhang, X.W. Deng and X.H. Wei
629
Mechanical and optical characteristics of Al-doped C60 films J. Nishinaga, T. Aihara, H. Yamagata and Y. Horikoshi
633
Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1)Fstructure and electrical properties C.P. Chen, M. Hong, J. Kwo, H.M. Cheng, Y.L. Huang, S.Y. Lin, J. Chi, H.Y. Lee, Y.F. Hsieh and J.P. Mannaerts
638
xvi
Contents
Surface modification of Si substrates by CdF2 molecular beam for stable growth of fluoride ultrathin heterostructures M. Maeda, J. Omae, S. Watanabe, Y. Toriumi and K. Tsutsui
643
XII. Spintronics Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs heterostructures grown on exact GaAs(1 1 1)B substrates R. Nakane, J. Kondo, M.W. Yuan, S. Sugahara and M. Tanaka
649
Growth control, structure and ferromagnetic properties of digital Mn/GaAs heterostructures X.X. Guo, C. Herrmann, X. Kong, D. Kolovos-Vellianitis, L. D.aweritz and K.H. Ploog
655
Infrared light-induced beating of Shubnikov–de Haas oscillations in MBE grown InAs/AlSb quantum wells Y.G. Sadofyev, A. Ramamoorthy, J.P. Bird, S.R. Johnson and Y.-H. Zhang
661
Epitaxial growth of Fe3Si/GaAs (0 0 1) hybrid structures for spintronic application J. Herfort, H.-P. Scho. nherr, A. Kawaharazuka, M. Ramsteiner and K.H. Ploog
666
Excitonic transitions in (Ga1@xMnx)N thin films with high Curie temperature H.C. Jeon, J.A. Lee, Y. Shon, S.J. Lee, T.W. Kang, T.W. Kim, Y. Kee Yeo, Y. Hun Cho and M.-D. Kim
671
Magnetic, optical and transport properties of GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures M.S. Kim, Y.K. Zhou, S. Kimura, S. Emura, S. Hasegawa and H. Asahi
675
Chirped multiple InAs quantum dot structure for wide spectrum device applications L.H. Li, M. Rossetti and A. Fiore
680
Molecular beam epitaxy of p-type cubic GaMnN layers C.T. Foxon, S.V. Novikov, L.X. Zhao, K.W. Edmonds, A.D. Giddings, K.Y. Wang, R.P. Campion, C.R. Staddon, M.W. Fay, Y. Han, P.D. Brown, M. Sawicki and B.L. Gallagher
685
Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system M. Reinwald, U. Wurstbauer, M. Do. ppe, W. Kipferl, K. Wagenhuber, H.-P. Tranitz, D. Weiss and W. Wegscheider
690
Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy J. Ib!an˜ez, K.W. Edmonds, M. Henini, L. Eaves, D. Pastor, R. Cusco! , L. Artu! s and H. Akinaga
695
Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE K. Onomitsu, H. Fukui, T. Maeda, Y. Hirayama and Y. Horikoshi
699
XIII. Optoelectronic devices MBE growth of mid-IR type-II interband laser diodes J. Schmitz, C. Mermelstein, R. Kiefer, M. Walther and J. Wagner
704
Contents
xvii
GSMBE growth of GaInAsP/InP 1.3 mm-TM-lasers for monolithic integration with optical waveguide isolator F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets and J.L. Gentner
709
High-temperature (TX400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers Q.K. Yang, C. Mann, F. Fuchs, K. Ko. hler and W. Bronner
714
Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications J.L. Pau, J. Pereiro, C. Rivera, E. Mun˜oz and E. Calleja
718
Molecular beam epitaxy of vertical-emitting microcavity lasers for the 6–8 micron spectral range operating in continuous-wave mode T. Schwarzl, M. Bo. berl, G. Springholz, E. Kaufmann, J. Roither, W. Heiss, J. Fu. rst and H. Pascher
723
Room temperature 1.25 mm emission from high indium content InxGa1@xAs/GaAs quantum wells grown by molecular beam epitaxy Z.C. Niu, H.Q. Ni, X.H. Xu, Y.Q. Xu, Z.H. He, Q. Han and R.H. Wu
728
Very low threshold current density 1.3 mm GaInNAs single-quantum well lasers grown by molecular beam epitaxy S.M. Wang, Y.Q. Wei, X.D. Wang, Q.X. Zhao, M. Sadeghi and A. Larsson
734
Lead salt mid-IR photodetectors with narrow linewidth M. Arnold, D. Zimin, K. Alchalabi and H. Zogg
739
Increasing the spectral separation between the emission lines from individual CdSe quantum dots through annealing T.C.M. Graham, X. Tang, K.A. Prior, B.C. Cavenett and R.J. Warburton
743
Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy Y.Q. Wei, S.M. Wang, X.D. Wang, Q.X. Zhao, M. Sadeghi, I. T(angring and A. Larsson
747
Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector A. Vainionp.aa. , S. Suomalainen, A. Isom.aki, O. Tengvall, M. Pessa and O.G. Okhotnikov
751
XIV. Cascade lasers MBE growth of terahertz quantum cascade lasers H.E. Beere, J.C. Fowler, J. Alton, E.H. Linfield, D.A. Ritchie, R. Ko. hler, A. Tredicucci, G. Scalari, L. Ajili, J. Faist and S. Barbieri
756
Comparison of strain-compensated quantum cascade lasers grown with GaInAs and InP waveguides G. Boehm, A. Friedrich, G. Scarpa, R. Meyer and M.-C. Amann
765
xviii
Contents
Low threshold distribution feedback quantum cascade lasers at 7.6 mm grown by gas source molecular beam epitaxy A.Z. Li, G.Y. Xu, Y.G. Zhang, H. Li and X. Zhang
770
Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions S. Ho. fling, R. Kallweit, J. Seufert, J. Koeth, J.P. Reithmaier and A. Forchel
775
Continuous-wave operation quantum cascade lasers at 7.95 mm G.Y. Xu, A.Z. Li, Y.G. Zhang and H. Li
780
Author Index
785
Subject Index
799
This journal is part of ContentsDirect, the free alerting service which sends tables of contents by e-mail for Elsevier books and journals. You can register for ContentsDirect online at: http://contentsdirect.elsevier.com