Etude de la resistivité électrique des alliages binaires ordonnés

Etude de la resistivité électrique des alliages binaires ordonnés

72 ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y M i o r o w e l d i n g - - l u e r or electron b e a m ? T. ~L~ccuIx~, El...

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72

ABSTRACTS ON M I C R O E L E C T R O N I C S AND R E L I A B I L I T Y

M i o r o w e l d i n g - - l u e r or electron b e a m ? T. ~L~ccuIx~, Electronics, p. 23 (July 5, 1963). One promising application for pulsed ruby lasers is in welding special alloys and microcircuits. However, advances in electron-beam techniques provide strong competition. These include air or controlled atmosphere welding and use of a plasma cathode. Mioroelectroaies m o u n d the world. Staff report, Electronics, p. 37 (Aug. 2, 1963). The article concludes that European and Japanese manufacturers are looking to integrated circuits for industrial computers, process control systems andwin a few cases--consumer items. Will lasers w e l d circuit components? K. W. Du.'~L~P and D. L. WILLIAMS, Electronics, p. 54 (July 12, 1963). Spot welds ,~ith adequate penetration can result with the pulsed output of a ruby laser yielding 6943 Angstrom radiation. Short, high-power laser pulses delivering energy in the range of tens of joules will be valuable in circuit-component welding. This can be done now, but laser welding will not be competitive until it can be operated on a continuous.basis or at a high repetition pulse rate. While drilling and cutting of material has been popularly demonstrated almost without effort, the process of applying laser beams to welding is proving to be much more difficult. Try field-effect transistors for r e d u n d a n c y . R. C. BURNSand E. D. Cs.,,wrl~, Electron. Design 11, 74-77 (Jan. 18, 1963). With the advent of field-effect transistors (FET), some old redundancy tricks possible with vacuum tubes can be applied to solid-state circuits. The high input impedance of FETs allows the designer to parallel redundant amplification stages so that the system will continue to produce gain despite catastrophic failures of individual parts. Echo capsule for m e d i c a l u s e - - a battery-less endoradiesonde. JIN-IC8~ NAOUMO, AKIHIKO UCHIYAMA, SEIJI KIMOTO, TETSU WATANUKI, MOTOFL.X.ZUHORI, KOZO SUMA, ATSUYOSH[OUCHI, MASAO KUMANOand HIROStt! WATA.'~ASE,NEC Res. ~ Develop., p. 4 (April 1963). A new type of a swallowable radio transmitter, ECHO CAPSULE, is described along with some clinical experiments. Unlike other similar capsules which have been reported, this capsule contains no battery and is energized from outside the human body. The energy is converted into d.c. by the transistor of the oscillator circuit itself, stored into a capacitor and then used as an energy source for the transmission of information on temperature, acidity or the like within the digestive tract. Rationalized p a c k a g i n g ~ a n evolutionary approach to microminiaUxrization. Brit. Commun. Electron., p. 710 (Sept. 1963). Describes a system evolved by the G.E.C. of removing the stumbling blocks to a more extensive use of microminiaturization techniques. Briefly, they believe that most of the schemes so far proposed~thin film, solid circuits and others--involve departures from existing technology that are too radical in themselves, so that no single scheme is likely to be widely adopted. Hence the laboratories have been seeking a packaging system that will not only accommodate miniature and microminiature components as they are today, but also will be able to utilize the smaller components and microminiature circuit units of the future. They believe that this can be achieved by a packaging system capable of shrinking as smaller and more sophisticated components are introduced. Etude de la resistivit6 61ectrique des alliages bln=ires o r d o n n ~ . R. Pxcg, J. Phys. Chem. Solids 24, 741-749 (1963). A relation between long-range order existing in a binary alloy and the corresponding anomaly in resistivity is established. General formulae are obtained under the following assumptions: quasi-free conduction electrons, and order due to binding forces between metallic ions. These formulas are valid whatever the range of the binding forces, the type of order (normal or periodically antiphased) and the relative concentration of the two components. The correction due to short-range order is calculated with a molecular field approximation. (In French.) Saving microcircuit power with tunnel-diode coupling. H. C. JoSEPHS and J. T. MAUPIN, Electronics, p. 30 (Aug. 23, 1963). A substantial reduction in static power dissipation is realized when transistor logic stages are coupled using tunnel diodes rather than the conventional resistance-capacitance circuits. This saving can make the crucial difference in microcircuit design. SEMICONDUCTOR MICROMINIATURE INTEGRATED CIRCUITS Silicon heavily doped by energetic cesiuan ions. J. O. McC^LDL~"and A. E. WIDMER,.~. Phys. Chem. Solids 24, 1073-1080 (1963). Cesium ions of a few kilovolts energy were driven in < 1 1 0 >