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Hybrid microelectronics in military applications
World Abstracts on Microelectronics and Reliability Design considerations of hybrid integrated active RC filters. A. HESZn~OER and E. SIMONYI.Prec. of the 5th colloquium on microwave communication. Vol. II. Akademial Kiado, Budapest. p. 131. A generalization of the Q multiplier structure is presented for realising widely differing pole Q factors by using elements of a standard building block family of identical low Q values. The properties of the modified Sehoeflter's sensitivity index extended to integrated ARC networks are examined. A thin-film multilayering technique for hybrid microcircuits. F. Z. KE~s~ and R. Y. SCAPPLE.Solid St. Techn. 44 (May 1974). A novel process for fabricating multilayer thin-film hybrid microcircuits on ceramic substrates is described. The process is simple, economical, and compatible with existing hybrid processing technology. Via holes formed in an organic insulating layer are used to provide electrical throughconnections between the top and bottom conductor levels. Photoprintable materials and processing equipment for thick-film microcircuitry. J. E. JOLLEY, R. V. WEAVER, J. H. WELLS, J. J. FELTENand D. W. ROE. Solid St. Techn. 33 (May 1974). FODEL* Photoprintable Compositions are unique thick-film materials capable of resolving 2-rail gold conductor lines and 5-rail vias in low-K dielectric layers. The materials, dispersions of particulate metals and inorganic oxides in a photosensitive vehicle system, are applied to ceramic substrates by screen printing. Patterns are defined by selectively exposing the coatings to ultraviolet light through a photomask and washing away unexposed areas with an organic solvent. A mask alignment/exposure system and solvent spray developer have been developed for these process steps. Processing is completed by firing in air. Alternate layers of conductors and dielectric may be used to fabricate multilayer structures. Applications under investigation include transmission lines for microwave integrated circuits and interconnections for arrays of monolithic integrated circuits. A hybrid integrated silicon diode array for visible earthhorizon sensing. F. J. BACHNEg, R. A. COHEN, R. W. MOUNTAIN, W. H. McGONAGLE and A. G. FOYT. Prec. IEEE 24th Electronic Components Conference, Washington D.C. 262 (13-15 May 1974), An earth-horizon sensing device, operating principally in the visible portion of the spectrum, has been designed, fabricated and tested for use in MIT, Lincoln Laboratory's LES 8/9 communications satellites as part of the system which maintains the satellites' orientation with respect to earth. The complete hybrid circuit, shown schematically in Figure 1, consists of four 0.226 × 0.338 in. silicon chips mounted on a 2.0 × 2.0 × 0.025 in. 99.5 % alumina substrate. Each of the four silicon chips contains eight photodiodes whose active area is 0.032 × 0.170 in.
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Design of precision thin film resistive metworks. G. L. BREDENKAMP. Microelectron. & Reliab. 13, 49 (1974). Untrimmed resistor networks having relative tolerances better than +0-05 per cent can be designed by eliminating the effect of both the resistivity distribution across the substrate and also that of undercutting during etching. The design rules for achieving this are set out. Thermal triggering of shock; crystallization in sputtered Ge films. K. J. CALLANAN,A. MATSUDA,A. MXNEO,T. KUROSU and M. KtKUCHI. Solid St. Comm. 15, 119 (1974). Thermal triggering of shock-crystallization in sputtered Ge films has been achieved through localized heating by a d.c. current. Electrical conductance in sputtered films has also been investigated. Indefinite admittance matrix of a 5-layer thin-film integrated structure. A. K. KAMALand K. U. AHJ~D. Microelectron. & Reliab. 13, 229 (1974). The advent of integrated electronic devices has aroused keen interest in the study of the properties of muitilayer thin-film structure. A variety of network functions may be derived from the indefinite admittance matrix of a multiterminal multilayer structure. With the objective in view, the indefinite admittance matrix of a five-layer structure (consisting of three resistive layers separated from one another by two dielectric layers) governed by a second-order linear differential equation is evaluated taking into account the parasitic capacitances invariably present among the constituent layers. Hybrid microelectronies in military applications. GRAHAM BIDDULPH. Electronic components 17 (10 Sept. 1974). In military applications the choice of technology or mixture of technologies depends upon many factors and is usually determined following detailed discussions between engineers from the hybrid manufacturer and systems house. In addition to the circuit schematic, test specification, performance data and packaging concept, full consideration is given to the environmental specifications, mechanical performance required and level of in-line process conditioning. The application of lumped element techniques to high frequency hybrid integrated circuits. R. E. CHADDOCK. The Radio and Electronic Engineer. 44, 8, 414 (1974). Lumped element techniques as employed in a production range of high-frequency hybrid power amplifiers are described in the first part of this paper. The lumped inductor is a component not commonly employed for integrated circuits and such an application requires novel design considerations. In the second part, some of these are identified from the theory of lumped inductors and compared with the practical case.
9. ELECTRON, ION AND LASER BEAM TECHNIQUES *Electron Beam Evaporated alumlnlum oxide gate silicon transistors. Technical Rept. CHENO, CHANG-CHINO. New Mexico Univ. Albuquerque Bureau of Engineering Research EE212(73)ONR-005. (Oct. 1973). Aluminum oxide films prepared by the electron beam evaporation of A1203 tablets were studied in metal-insulator-semiconductor devices.
MR--Vol. 14, No. I - - C
The structure of A1203 films is amorphous with a density of 2.25 gm/cc. The film conductivity is smaller than 5 x 10 to the 14th power (ohm-cm) and the breakdown strength is higher than 1,300,000 V/era. The average relative dielectric constant is about 7. The interface surface states of the MIS sample are small in the middle of the forbidden band,
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Design of precision thin film resistive metworks. G. L. BREDENKAMP. Microelectron. & Reliab. 13, 49 (1974). Untrimmed resistor networks having relative tolerances better than +0-05 per cent can be designed by eliminating the effect of both the resistivity distribution across the substrate and also that of undercutting during etching. The design rules for achieving this are set out. Thermal triggering of shock; crystallization in sputtered Ge films. K. J. CALLANAN,A. MATSUDA,A. MXNEO,T. KUROSU and M. KtKUCHI. Solid St. Comm. 15, 119 (1974). Thermal triggering of shock-crystallization in sputtered Ge films has been achieved through localized heating by a d.c. current. Electrical conductance in sputtered films has also been investigated. Indefinite admittance matrix of a 5-layer thin-film integrated structure. A. K. KAMALand K. U. AHJ~D. Microelectron. & Reliab. 13, 229 (1974). The advent of integrated electronic devices has aroused keen interest in the study of the properties of muitilayer thin-film structure. A variety of network functions may be derived from the indefinite admittance matrix of a multiterminal multilayer structure. With the objective in view, the indefinite admittance matrix of a five-layer structure (consisting of three resistive layers separated from one another by two dielectric layers) governed by a second-order linear differential equation is evaluated taking into account the parasitic capacitances invariably present among the constituent layers. Hybrid microelectronies in military applications. GRAHAM BIDDULPH. Electronic components 17 (10 Sept. 1974). In military applications the choice of technology or mixture of technologies depends upon many factors and is usually determined following detailed discussions between engineers from the hybrid manufacturer and systems house. In addition to the circuit schematic, test specification, performance data and packaging concept, full consideration is given to the environmental specifications, mechanical performance required and level of in-line process conditioning. The application of lumped element techniques to high frequency hybrid integrated circuits. R. E. CHADDOCK. The Radio and Electronic Engineer. 44, 8, 414 (1974). Lumped element techniques as employed in a production range of high-frequency hybrid power amplifiers are described in the first part of this paper. The lumped inductor is a component not commonly employed for integrated circuits and such an application requires novel design considerations. In the second part, some of these are identified from the theory of lumped inductors and compared with the practical case.
9. ELECTRON, ION AND LASER BEAM TECHNIQUES *Electron Beam Evaporated alumlnlum oxide gate silicon transistors. Technical Rept. CHENO, CHANG-CHINO. New Mexico Univ. Albuquerque Bureau of Engineering Research EE212(73)ONR-005. (Oct. 1973). Aluminum oxide films prepared by the electron beam evaporation of A1203 tablets were studied in metal-insulator-semiconductor devices.
MR--Vol. 14, No. I - - C
The structure of A1203 films is amorphous with a density of 2.25 gm/cc. The film conductivity is smaller than 5 x 10 to the 14th power (ohm-cm) and the breakdown strength is higher than 1,300,000 V/era. The average relative dielectric constant is about 7. The interface surface states of the MIS sample are small in the middle of the forbidden band,