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Hybrid scan matrix for processor interface
WORLD
ABSTRACTS
ON MICROELECTRONICS
obtained in conventional matrix analysis of production variables.
The sintering m e c h a n i s m in a silver-palladium film. S. COLE,Jr. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 2-A-1-1. A brief review of basic sintering mechanisms is presented, together with a summary of results, recently published by the author, which shows that sintering of a silverpalladium glass system is accomplished by a process of solution-precipitation. T h e maximum solubility of silver and palladium in a typical film glass is reported. Contact angles of the glass on silver-palladium and on a 96 per cent alumina substrate in air and in nitrogen are reported. These data provide a n u m b e r of important conclusions regarding the basic nature of silverpalladium conductor films. A process of selective solution and reprecipitation provides one reason for close control of both peak furnace time and temperatures. Also indicated is the need for close control of heating rates and of the particle size of the paint constituents. T h e effect of changes in these areas is predicted. Finally, a driving force has been found which drives the glass away from free metal surfaces and to the metal ceramic interface.
Thick-film registration m a d e easy. K. KURZWEIL and P. SIGEL. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 2-A-4-1. Thick-film substrates are prepared with a progression of patterns printed with various inks. Registration among these patterns is usually a tedious and lengthy trial printing and error correcting procedure. Some past attempts have been made to pre-register the pattern to the screen frame, but this prevents optimum orientation of the pattern detail with the mesh openings. A new method using simple, inexpensive equipment has been developed that allows both optimum pattern orientation and precise pre-registration of the print to the substrate. T h e method is in use for the processing of complex, dense multilayer circuits. Fast, off-printer registration and more precise layer placement are achieved, with corresponding improved circuits yields and reduced processing cost. T h e design and use of the equipment is described and typical finished substrates shown.
Laser resistor t r i m m i n g analysis using a resistive sheet a n a l o g y . E. SWENSON,G. VINCENT and J. RILEY. Proceedings I S H M Microelectronics Symposium, OctoberNovember (1972), p. l-A-5-1. Resistor trimming by lasers is a relatively new a r t - - a n art, because most of the resistor shapes and cutting paths have been chosen by
9. E L E C T R O N ,
December (1972), p. 27. T h e latest progress in ion implantation as applied to field effect devices and
RELIABILITY
215
trial-and-success as acceptable techniques. Whether or not they are optimum has, for the most part, been ignored in the heat of getting resistors out the door. Some efforts have been made toward exotic analysis approaches using the Schwartz-Christoffel transformations. These have led to transcendental solutions which were often more baffling than the trial-and-error results. Controlled experiments with actual resistors are difficult because of the small size of the resistors and the statistical nature of the size, material, shape and cutting paths involved. In order to simplify the experimental approach large sheets of resistive paper have been cut to represent resistor configurations. Scissor cuts have been used to simulate trimming paths. With these analogues not only can resistance vs. cut length be easily investigated but equipotential lines can also be easily found. T h e equipotential lines show areas of high field concentration which tend to increase resistor noise and worsen temperature response. From the measured data, empirical mathematical models have been formulated which simplify cutting prediction and lead toward optimum resistor trimming processes. T h i c k - f i l m resistor adjustment in high voltage discharge. Y. TAKETA and M. HARADOME. Proceedings I S H M Microeleetronics Symposium, October-November (1972), p. 1-A-4-1. T h e improved discharge trimming method performs high voltage discharge on to the manipulator load pins of IC tester. This method adjusts the resistance value concurrently with the measurement of the resistance value for resistors of 100 tI/sq or less and of decreasing it for resistors of 1 K ~ / s q or above.
Hybrid scan matrix for processor interface. G. W. KINDER and M. J. ZOLA. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 1-B2-1. Real-time telephone switching applications impose severe requirements on the scanning matrix used to interface between a large array of high noise relay channels and a low threshold integrated circuit duplicated processor environment. A hybrid circuit which meets these performance requirements is fabricated in tantalum and silicon beam-lead, sealed junction technology and provides transient protection, noise filtering, sampling capability and built-in diagnostic features. T h e thin-film network consists of anodically trimmed tantalum nitride resistors and T M M capacitors to provide high reliability with a self-healing capability. T h e silicon chip contains a high-speed multiplexer, built-in diagnostic logic and interconnection circuitry for duplicated data processors.
ION AND
The impact of ion implantation on silicon d e v i c e and circuit technology. H. G. DILL, R. M. FINNILA, A. M. LEVPP and T. N. TOOMaS. Solid St. Technol.,
AND
LASER BEAMS
circuits as well as to microwave devices is discussed. A short survey presents the basic advantages and applications and also discusses some technological problems of ion implantation affecting the device and circuit performance. New device and circuit applications in the
ABSTRACTS
ON MICROELECTRONICS
obtained in conventional matrix analysis of production variables.
The sintering m e c h a n i s m in a silver-palladium film. S. COLE,Jr. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 2-A-1-1. A brief review of basic sintering mechanisms is presented, together with a summary of results, recently published by the author, which shows that sintering of a silverpalladium glass system is accomplished by a process of solution-precipitation. T h e maximum solubility of silver and palladium in a typical film glass is reported. Contact angles of the glass on silver-palladium and on a 96 per cent alumina substrate in air and in nitrogen are reported. These data provide a n u m b e r of important conclusions regarding the basic nature of silverpalladium conductor films. A process of selective solution and reprecipitation provides one reason for close control of both peak furnace time and temperatures. Also indicated is the need for close control of heating rates and of the particle size of the paint constituents. T h e effect of changes in these areas is predicted. Finally, a driving force has been found which drives the glass away from free metal surfaces and to the metal ceramic interface.
Thick-film registration m a d e easy. K. KURZWEIL and P. SIGEL. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 2-A-4-1. Thick-film substrates are prepared with a progression of patterns printed with various inks. Registration among these patterns is usually a tedious and lengthy trial printing and error correcting procedure. Some past attempts have been made to pre-register the pattern to the screen frame, but this prevents optimum orientation of the pattern detail with the mesh openings. A new method using simple, inexpensive equipment has been developed that allows both optimum pattern orientation and precise pre-registration of the print to the substrate. T h e method is in use for the processing of complex, dense multilayer circuits. Fast, off-printer registration and more precise layer placement are achieved, with corresponding improved circuits yields and reduced processing cost. T h e design and use of the equipment is described and typical finished substrates shown.
Laser resistor t r i m m i n g analysis using a resistive sheet a n a l o g y . E. SWENSON,G. VINCENT and J. RILEY. Proceedings I S H M Microelectronics Symposium, OctoberNovember (1972), p. l-A-5-1. Resistor trimming by lasers is a relatively new a r t - - a n art, because most of the resistor shapes and cutting paths have been chosen by
9. E L E C T R O N ,
December (1972), p. 27. T h e latest progress in ion implantation as applied to field effect devices and
RELIABILITY
215
trial-and-success as acceptable techniques. Whether or not they are optimum has, for the most part, been ignored in the heat of getting resistors out the door. Some efforts have been made toward exotic analysis approaches using the Schwartz-Christoffel transformations. These have led to transcendental solutions which were often more baffling than the trial-and-error results. Controlled experiments with actual resistors are difficult because of the small size of the resistors and the statistical nature of the size, material, shape and cutting paths involved. In order to simplify the experimental approach large sheets of resistive paper have been cut to represent resistor configurations. Scissor cuts have been used to simulate trimming paths. With these analogues not only can resistance vs. cut length be easily investigated but equipotential lines can also be easily found. T h e equipotential lines show areas of high field concentration which tend to increase resistor noise and worsen temperature response. From the measured data, empirical mathematical models have been formulated which simplify cutting prediction and lead toward optimum resistor trimming processes. T h i c k - f i l m resistor adjustment in high voltage discharge. Y. TAKETA and M. HARADOME. Proceedings I S H M Microeleetronics Symposium, October-November (1972), p. 1-A-4-1. T h e improved discharge trimming method performs high voltage discharge on to the manipulator load pins of IC tester. This method adjusts the resistance value concurrently with the measurement of the resistance value for resistors of 100 tI/sq or less and of decreasing it for resistors of 1 K ~ / s q or above.
Hybrid scan matrix for processor interface. G. W. KINDER and M. J. ZOLA. Proceedings I S H M Microelectronics Symposium, October-November (1972), p. 1-B2-1. Real-time telephone switching applications impose severe requirements on the scanning matrix used to interface between a large array of high noise relay channels and a low threshold integrated circuit duplicated processor environment. A hybrid circuit which meets these performance requirements is fabricated in tantalum and silicon beam-lead, sealed junction technology and provides transient protection, noise filtering, sampling capability and built-in diagnostic features. T h e thin-film network consists of anodically trimmed tantalum nitride resistors and T M M capacitors to provide high reliability with a self-healing capability. T h e silicon chip contains a high-speed multiplexer, built-in diagnostic logic and interconnection circuitry for duplicated data processors.
ION AND
The impact of ion implantation on silicon d e v i c e and circuit technology. H. G. DILL, R. M. FINNILA, A. M. LEVPP and T. N. TOOMaS. Solid St. Technol.,
AND
LASER BEAMS
circuits as well as to microwave devices is discussed. A short survey presents the basic advantages and applications and also discusses some technological problems of ion implantation affecting the device and circuit performance. New device and circuit applications in the