Moldless semiconductor device and PV device module

photovoltaic

system.

photovoltaic a light

receiving

plane,

in a spaced

receiving

plane,

conducting

plane,

the photovoltaic elements.

elements

The

light

as viewed

transverse and

upon

to the module

and a light reflecting

the light

reflecting

ascending

first

and

and

sides

so that

inclined

being

inclined are arranged

of

the

right

planes

are

on the

middle

point

respectively. Patent number: 6323,415 Inventors:

Tsuyoshi

Warabisako Miyamura,

Ohtsuka,

Terunori

Yazawa,

Yoshinori

ApplicantYale Carolina,

Shinichi

Junko

Sub-nanoscale and processes

electronic dimensions

is for

much

semiconductor

a new

integrated

at

atomic stability

of

in

a

configuration; to

interconnects, connected

to

pairs

determined

problems

as

a

NO.sup.+,

an

is further a

ammonium with

atomic

active

circuits

for

utilizes an inherently

scale

processing

technique

limitations

of conventional

electronics.

of a This

Photovoltaics Bulletin

and

batch

providing

the electron conductor.

gives a more

are

fabrication

ULSI,

in the economics

of

The

self-aligned

addressing

through

of a polymeric

devices

pads

of chemically devices,

or one of

manufacture

combined

industrial in

t,

a

m, an organic

N.sup. group,

x is

substituent.

can be used notably

colorants,

portion

S0.sub.x

is a perfluorinated

electronic

for ionic

conducting

and the catalysis

of various

reactions.

Michel

Gauthier,

Michot,

Armand,

Japan.

a moldless with

waveRadical

moldless

different terminal. withstand high

modules.

all other

device

as a bypass device

chip held between and

connected

is provided. has,

used

The moldless

in

at its region

of the

to be incorporated

force and exhibits

photovoltaic

device device has

and made it possible

in photovoltaic

devices with

ease and to use resin in a small quantity sealed with the resin. It provides which

are tough

of downsizing

impact,

even though

favorable

solve prior art problems.

one

device can

semiconductor

achieved a very thin structure

At least

chip, a hardness

regions

external

devices

cost

make use of

This moldless semiconductor

reliability

conductor

a

and

and

the the

depositing

semi-

at least one n-i-p

top

removing

coated the

with

upper

photovoltaic

of

replacing

transparent on

materials,

the cut substrates materials

succession

on one of the faces

material

of the

layer of

the

from

of

semi-

the strip,

semi-conductor

electrode

to

cells which

form

are ready

6,316,283

Publication ah

November

13, 2001

Process for producing solar module The

present

producing

when

semiconductor

to torsion,

they are moldless

bend

and

and can

a thin-film

Solar GmbH,

invention

by a scraping

tool as cutting

a process

tip. The plane

as a sliding surface. surface

or separating

flattened

means

includes

surface

In the separating

rests with

process,

the

layer while

the

its complete

layer,

is case perpendicular

or substrate. the

By this

damage

to

Pressure

adjustment

and without double

contact

danger

layer

flattened

danger

it possible

Patent number:

so the pn The

tool

even a meander-shaped

being axially rotated.

and enhance

of

is minimized.

cut through.

tool avoids time consuming on making

design,

layer

on the tool is noncritical

moves in any direction,

time

axis of

to the contact

may be adjusted

is safely

path without

a

serves

face parallel to this layer. The longitudinal the tool

for

characterized

The tool employed

tool slides on the first contact sliding

Germany

provides

a thin film solar module

flattened

terminals

significant

conductive

which

to the semiconductor from

junction

strip

in shape

forming

depositing

cell

invention

one

cells

in the strip,

for the pn layer.

terminals

two

resin and a

semiconductor

to the terminals

of the

contiguous

the

materials,

a solar cell module

a semiconductor

electrically

device,

semiconductor

any mold

material

outer-connecting

conductor or p-i-n

least

of the desired

cut substrates

strip,

The

cutting

having

dimensions

Applicant: ANTEC

semiconductor

A

comprising

one

device and

device module,

the moldless

at

of appropriate

Inventors: Eric Saurer

is for a semiconductor

not covered

substrates,

cells. The of this type

and has for a long time

material,

Patent number:

Michel

Moldless semiconductor PV device module

particularly

of such

in batch

for use. 20, 2001

Yves Choquette

invention

recent

and the

manufacture

providing

conductive

individual

Patent number.6,319,428 Inventors: Christophe

of a plurality

of ell is relatively

includes

m. The anionic

materials,

for

techniques.

m, or an organometallic

R.sub.F

cells

method

scale batch

Switzerland

manufacturing

photovoltaic a

manufacturing

with the valence

R.sub.F

a

comprised

with the valence the formula

concerns

by the absence

--NH.sub.4

the valence

SA (Swatch Group)

for

Koichi

method for

been limited

nitrosonium

Murakami,

Takeyama,

electronic

cation

diode.

self-aligned

innovations

assembly

approach

modulation

of units.

particularily

cation

and a construction

pads,

oligomer

method

A

M.sup.tm

overall

hydroxonium,

cation

photovoltaic

conductor

and allows

interconnects,

improvement

portion

the compound

M

device,

thin-film

pair of contact

disclosed

spontaneous

synthesized

w

of

portion

to ensure

Applicant: Canon,

electronic

Yoshifumi

invention

in

compounds

of an amide

an anionic

numbers

neutrality;

more

fits the requirements

Among

self-aligned

electronic

sufficient

an integrated

contact

number

approach

interconnect

gain

is comprised

with at least one cationic

This

thin-film

the

of

electrical

only by a conductive

fabrication.

function

compound

ionic

The

load has been delocalized.

its salts, including

ultra-dense

form

of

each adjacent

technology

concerns

the anionic

Centre France

of

improved

level, giving

predetermined

and

connected

those

transistors;

interconnects

circuits

having

and to related

It comprises

structure

of

It meets requirements

and systems.

than

circuits,

conductivity

conductor

generation

smaller

interconnect

precisely

invention

materials,

of South

technology,

and processes.

electronic

Canada, Scientifique,

Publication date: November

microcircuit

circuit

The

Hydro-Quebec,

de la Recherche

conducting

devices

Yamada,

Assignee: As&b

National

The compounds

University

Satoru

20, 2001

13, 2001

Tsutomu

Applicants:

chemical

University,

Inventors: Koji Tsuzuki,

1 or 2, and Z is an electroattractive

Minemura

electronic

Publications date: November

Batch manufacturing photovoltaic cells

matches

Muramatsu,

Patent numbex6,316,832

Perfluorinated amide salts and their uses as ionic conducting materials

Z, wherein

USA

invention

systems

Uematsu,

Ken Tsutsui,

Hiroyuki

The

27, 2001

Yoshiaki

per

Shimizu

metallic

Publication date: November

cost

with size.

Inventors: Mark A Reed, James M. Tour

which

at least two

planes

and these

left

a

plane

member,

two second

the second

has

photovoltaic

includes

inclined

while

left ascending, right

plane

planes

the

by

in a plane

receiving

adjacent

elements

first inclined

plane

light

two

light

to the photovoltaic

reflecting

technology

Publication ahte: November

for

received

on a cross section

traversing

planes,

the

not directly

conventional

is no longer decreasing

Patent number: 6,320,200

with the light plane

in

transistor

elements

reflecting

incident but

having

photovoltaic

and a light

when

concentrator

a medium

relationship

light

receiving

light

includes

arranged

structure

A

module

This cutting

raising and lowering

to increase

the

tool life

process efficiency.

6,319,747

Publication dzte: November Inventors: Alexandra

20, 2001

Todisco,

Dieter

Bonnet,

Peter Dinges

February 2002