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Review of vacuum deposition mechanisms—III
466
WORLD
ABSTRACTS
ON MICROELECTRONICS
AND RELIABILITY
SiOz, and this condition necessitates frequent adjustment of the matching network. The desirability of having the matching network automatically compensate for these changes is evident.
S p i n - w a v e e n e r g y and source of i n h o m o g e n e i t i e s in thin films. M. SPARKS,Solid St. Commun. 8, No. 9 (1970), p. 659. It is shown that the correct interpretation of ferromagnetic-resonance measurements of the spin-wave exchange energy Dk* (1--~k ~) requires cognizance of the effects of an inhomogeneous internal field Hi on the spinwave energy and pinning. A proposed surface-imperfection source of the inhomogeneous He indicates how more homogeneous films can be fabricated and affords a natural explanation of the widely different degrees of inhomogeneity commonly reported in ferromagnetic metallic films.
Variables in the thick-film s c r e e n printing process and their effect on register tolerances in large-scale production. I. D. SALISBURY',Electron. Compon., April (1970), p. 419. There are many variables in the screen printing process. In fact, a U.S. author has listed a total of 38 in the substrate, inks, screens and printer. It is not intended to cover all these in this paper, but to restrict discussion to those found most important in large-scale production.
R e v i e w of v a c u u m deposition m e c h a n i s m s - - I I I . L. HOLLAND, Electron. Comport., April (1970), p. 429. This review is divided into two main sections concerned with vacuum evaporation and cathodic sputtering. In section 1 was treated evaporation of compounds and alloys, and section 2 is concerned with sputtering of pure metals, alloys, and compound films using reactive and rf sputtering. These articles show that studies in vacuum science aid thin-film workers in obtaining a better understanding of processes operative during vacuum deposition.
R e v i e w of v a c u u m deposition m e c h a n i s m s - - I V . L. HOLLAND, Electron. Compon., May (1970), p. 533. The review is divided into two parts concerned with vacuum evaporation and cathodic sputtering. In Part I was treated evaporation of compounds and alloys and in Parts I I - I V sputtering of pure metals, alloys and compound films using reactive and rf sputtering. It is shown that studies in vacuum science aid thin film workers in obtaining a better understanding of processes operative during vacuum deposition. An analysis is made of the emission, transport and condensation mechanisms operative during film deposition by the two techniques. The atomic and emission characteristics of thermal and ion bombardment sources are reviewed. The influence of residual gas and vapour on the passage of liberated atoms and molecules and on the purity or compound state of the deposit is considered. Limited attention is given to the influence of the deposition conditions on film structure and properties.
Thick f i l m m a t e r i a l s capabilities: 1969. J. J. Cox and D. T. DEcougsE% Electron. Compon., May (1970), p. 563. Although the relative merits of thick and thin film circuits are still a matter for fierce discussion, there has undoubtedly been a tremendous amount of progress made in thick film development over the past year. This article examines the "state-of-the-art" in thick films as it stood at the end of 1969.
WORLD
ABSTRACTS
ON MICROELECTRONICS
AND RELIABILITY
SiOz, and this condition necessitates frequent adjustment of the matching network. The desirability of having the matching network automatically compensate for these changes is evident.
S p i n - w a v e e n e r g y and source of i n h o m o g e n e i t i e s in thin films. M. SPARKS,Solid St. Commun. 8, No. 9 (1970), p. 659. It is shown that the correct interpretation of ferromagnetic-resonance measurements of the spin-wave exchange energy Dk* (1--~k ~) requires cognizance of the effects of an inhomogeneous internal field Hi on the spinwave energy and pinning. A proposed surface-imperfection source of the inhomogeneous He indicates how more homogeneous films can be fabricated and affords a natural explanation of the widely different degrees of inhomogeneity commonly reported in ferromagnetic metallic films.
Variables in the thick-film s c r e e n printing process and their effect on register tolerances in large-scale production. I. D. SALISBURY',Electron. Compon., April (1970), p. 419. There are many variables in the screen printing process. In fact, a U.S. author has listed a total of 38 in the substrate, inks, screens and printer. It is not intended to cover all these in this paper, but to restrict discussion to those found most important in large-scale production.
R e v i e w of v a c u u m deposition m e c h a n i s m s - - I I I . L. HOLLAND, Electron. Comport., April (1970), p. 429. This review is divided into two main sections concerned with vacuum evaporation and cathodic sputtering. In section 1 was treated evaporation of compounds and alloys, and section 2 is concerned with sputtering of pure metals, alloys, and compound films using reactive and rf sputtering. These articles show that studies in vacuum science aid thin-film workers in obtaining a better understanding of processes operative during vacuum deposition.
R e v i e w of v a c u u m deposition m e c h a n i s m s - - I V . L. HOLLAND, Electron. Compon., May (1970), p. 533. The review is divided into two parts concerned with vacuum evaporation and cathodic sputtering. In Part I was treated evaporation of compounds and alloys and in Parts I I - I V sputtering of pure metals, alloys and compound films using reactive and rf sputtering. It is shown that studies in vacuum science aid thin film workers in obtaining a better understanding of processes operative during vacuum deposition. An analysis is made of the emission, transport and condensation mechanisms operative during film deposition by the two techniques. The atomic and emission characteristics of thermal and ion bombardment sources are reviewed. The influence of residual gas and vapour on the passage of liberated atoms and molecules and on the purity or compound state of the deposit is considered. Limited attention is given to the influence of the deposition conditions on film structure and properties.
Thick f i l m m a t e r i a l s capabilities: 1969. J. J. Cox and D. T. DEcougsE% Electron. Compon., May (1970), p. 563. Although the relative merits of thick and thin film circuits are still a matter for fierce discussion, there has undoubtedly been a tremendous amount of progress made in thick film development over the past year. This article examines the "state-of-the-art" in thick films as it stood at the end of 1969.