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Subject index of volume 17
Materials Science and Engineering, B17 (1993) 203-206
203
Subject Index of Volume 17
Absorption new group HI aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 Aluminium improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropylgallium, 15 Amorphous silicon in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Arsenic new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by B elimination of specific metal-organic arsenic compounds, 21 Auger electron spectroscopy etching of copper and copper oxide at high rates via generation of copper species, 93 Cadmium telluride on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Carbon improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropylgallium, 15 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 new metal-organic precursors for growth of GaAs and~ Al/Ga~_xAs by chemical epitaxy, 1 Ceramics microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Chemical beam epitaxy improved GaAs/Gal_xAlxAs chemical beam epitaxy using triisopropylgallium, 15 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new metal-organic precursors for growth of GaAs and AI/Ga~_/As by chemical epitaxy, 1 Chemical vapour deposition a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 chemical vapour deposition of tungsten in a UHV system: influence of substrate conditions on the initial stages of growth, 131 chemical vapour deposition precursors for metal silicides, 118 growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 mineral precursor for chemical vapour deposition of Rh metallic films, 143
organometallic compounds: the chemist's contribution to new electronic materials, 104 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 silicon deposited by low pressure chemical vapour deposition from Si2Hr: experiments, modelling and properties, 72 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and Nil 3 at low temperature, 185 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Chlorine etching of copper and copper oxide at high rates via generation of volatile copper species, 93 Chromium silicide synthesis of chromium silicide-silicon carbide composite powders, 126 Conductivity heterogeneous systems based on precious metal powders and polymers, 190 Contact formation reaction diffusion in Ta/GaAs contacts, 147 Copper a new metal-organic chemical vapour deposition process for selective copper metallization, 87 etching of copper and copper oxide at high rates via generation of volatile copper species, 93 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Copper oxide etching of copper and copper oxide at high rates via generation of volatile copper species, 93 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Critical current density optimizing metaUo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 Crystal growth a new organoindium precursor for electronic materials, 34 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 selective epitaxial growth of In 1_xAlxAs by metal-organic vapour-phase epitaxy, 29 Cuprates microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Defects computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and NH 3 at low temperature, 185 Elsevier Sequoia
204 Dielectric properties growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 heterogeneous systems based on precious metal powders and polymers. 190 Dielectrics growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 Disilane silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties. 72 Doping effects microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Electron energy loss spectroscopy on the growth of epitaxial ultrathin films of a-Sn on CdTe(l 10), 112 Electron spectroscopy on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Epilayers a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of A s - H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new metal-organic precursors for growth of GaAs and AI~Ga~_~As by chemical epitaxy, 1 selective epitaxial growth of In1 _~AI~As by metal-organic vapour-phase epitaxy, 29 the selective epitaxial growth of silicon, 47 Etching etching of copper and copper oxide at high rates via generation of volatile copper species, 93 Ethylene growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 Film deposition a new metal-organic chemical vapour deposition process for selective copper metallization, 87 in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties, 72 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Film growth growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ
formation of As-H functionality by [3 elimination ~1: specific metal-organic arsenic compounds, 2 l on the growth of epitaxial ultrathin films of a-Sn on CdTe(l l(/), 112 preparation of copper and copper oxide flints by metal-organic chemical vapour deposition using flketoiminato complexes, 97 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H~,and NH 3 at low temperature, 185 the selective epitaxial growth of silicon, 47 Gallium arsenide improved GaAs/Ga~_xAI,As chemical beam epitaxy using triisopropylgallium, 15 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 new metal-organic precursors for growth of GaAs and AlxGa ~_xAs by chemical epitaxy, 1 reaction diffusion in Ta/GaAs contacts, 147 Glass mineral precursor for chemical vapour deposition of Rh metallic films, 143 Gold organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 Grain boundaries microstructure and cracking in pure and substituted YBa2CU3OT- 6, 152 Halides chemical vapour deposition precursors for metal silicides, 1 t 8 Heterostructures metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 High transition temperature oxide superconductors microstructure and cracking in pure and substituted YBa2Cu3OT- 6, 152 High transition temperature superconductors optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 Hydrogen preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Impurities improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropyigallium, l 5 new metal-organic precursors for growth of GaAs and AlxGal_xAS by chemical epitaxy, 1 Indium phosphide a new organoindium precursor for electronic materials, 34 Infrared spectroscopy silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties. 72
205 Integrated technology a new metal-organic chemical vapour deposition process for selective copper metaUization, 87 chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 chemical vapour deposition precursors for metal silicides, 118 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 Interfaces chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 reaction diffusion in Ta/GaAs contacts, 147 Integrated technology tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Laser processing in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 Layered compounds studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Metallization a new metal-organic chemical vapour deposition process for selective copper metallization, 87 Metals chemical vapour deposition precursors for metal silicides, 118 heterogeneous systems based on precious metal powders and polymers, 190 mineral precursor for chemical vapour deposition of Rh metallic films, 143 Microstructural development microstructure and cracking in pure and substituted YBa2CUaOT_ 6, 152 MOCVD a new metal-organic chemical vapour deposition process for selective copper metallization, 87 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po~-T conditions, 157 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 MOVPE a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using /5ketoiminato complexes, 97 selective epitaxial growth of Int_~AlxAS by metal-organic vapour-phase epitaxy, 29
Nucleation chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 studies on the nucleation and growth of chemical vapordeposited W on TiN sub strates, 137 Optoelectronics selective epitaxial growth of Inx_xAl~As by metal-organic vapour-phase epitaxy, 29 Organic substances a new organoindium precursor for electronic materials, 34 chemical vapour deposition precursors for metal silicides, I 18 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Oxidation molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 Oxygen improved GaAs/Ga~ _~AlxAS chemical beam epitaxy using triisopropylgallium, 15 Passivation chemical vapour deposition of tungsten in a UHV system: influence of substrate conditions on the initial stages of growth, 131 the selective epitaxial growth of silicon, 47 Photoconduction properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Photoluminescence a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 Plasma processing in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Polycrystalline silicon a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 the selective epitaxial growth of silicon, 47 Polymers heterogeneous systems based on precious metal powders and polymers, 190 Powders heterogeneous systems based on precious metal powders and polymers, 190 synthesis of chromium silicide-silicon carbide composite powders, 126 Precursors a new metal-organic chemical vapour deposition process for selective copper metallization, 87 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 mineral precursor for chemical vapour deposition of Rh metallic films, 143
206 new metal-organic precursors for growth of GaAs and AlxGa~ _.As by chemical epitaxy, 1 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials. 104 Pressure chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Process and device modelling a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 Process and device modelling growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 Process and modelling silicon deposited by low pressure chemical vapour deposition from SizH6:experiments, modelling and properties, 72 Raman spectroscopy chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Ruthenium heterogeneous systems based on precious metal powders and polymers, 190 Selenium on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Silane a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Silicides chemical vapour deposition precursors for metal silicides, I 18 Silicon chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 silicon deposited by low pressure chemical vapour deposition from Si2Hr: experiments, modelling and properties, 72 the selective epitaxial growth of silicon, 47 Silicon carbide growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 synthesis of chromium silicide-silicon carbide composite powders, 126 Silicon dioxide growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172
Silicon nitride molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H~ and NH 3 at low temperature, 185 Sputtering studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Sublimation mineral precursor for chemical vapour deposition of Rh metallic films, 143 Surface diffusion selective epitaxial growth of In~xAlxAs by metal-organic vapour-phase epitaxy, 29 Surface morphology organometallic compounds: the chemist's contribution to new electronic materials, 104 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors. 108 Surface structure selective epitaxial growth of Inl _.AsxAs by metal-organic vapour-phase epitaxy, 29 the selective epitaxial growth of silicon, 47 Tantalum reaction diffusion in Ta/GaAs contacts, 147 Thermal diffusion reaction diffusion in Ta/GaAs contacts, 147 Thermal processing new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 Thick films reaction diffusion in Ta/GaAs contacts, 147 Thin films mineral precursor for chemical vapour deposition of Rh metallic films, 143 on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Tungsten chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 X-ray spectroscopy synthesis of chromium silicide-silicon carbide composite powders, 126 Zinc telluride growth kinetics during metal-organic vapour deposition of ZnTe, 41
203
Subject Index of Volume 17
Absorption new group HI aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 Aluminium improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropylgallium, 15 Amorphous silicon in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Arsenic new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by B elimination of specific metal-organic arsenic compounds, 21 Auger electron spectroscopy etching of copper and copper oxide at high rates via generation of copper species, 93 Cadmium telluride on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Carbon improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropylgallium, 15 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 new metal-organic precursors for growth of GaAs and~ Al/Ga~_xAs by chemical epitaxy, 1 Ceramics microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Chemical beam epitaxy improved GaAs/Gal_xAlxAs chemical beam epitaxy using triisopropylgallium, 15 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new metal-organic precursors for growth of GaAs and AI/Ga~_/As by chemical epitaxy, 1 Chemical vapour deposition a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 chemical vapour deposition of tungsten in a UHV system: influence of substrate conditions on the initial stages of growth, 131 chemical vapour deposition precursors for metal silicides, 118 growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 mineral precursor for chemical vapour deposition of Rh metallic films, 143
organometallic compounds: the chemist's contribution to new electronic materials, 104 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 silicon deposited by low pressure chemical vapour deposition from Si2Hr: experiments, modelling and properties, 72 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and Nil 3 at low temperature, 185 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Chlorine etching of copper and copper oxide at high rates via generation of volatile copper species, 93 Chromium silicide synthesis of chromium silicide-silicon carbide composite powders, 126 Conductivity heterogeneous systems based on precious metal powders and polymers, 190 Contact formation reaction diffusion in Ta/GaAs contacts, 147 Copper a new metal-organic chemical vapour deposition process for selective copper metallization, 87 etching of copper and copper oxide at high rates via generation of volatile copper species, 93 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Copper oxide etching of copper and copper oxide at high rates via generation of volatile copper species, 93 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Critical current density optimizing metaUo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 Crystal growth a new organoindium precursor for electronic materials, 34 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 selective epitaxial growth of In 1_xAlxAs by metal-organic vapour-phase epitaxy, 29 Cuprates microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Defects computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H6 and NH 3 at low temperature, 185 Elsevier Sequoia
204 Dielectric properties growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 heterogeneous systems based on precious metal powders and polymers. 190 Dielectrics growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 Disilane silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties. 72 Doping effects microstructure and cracking in pure and substituted YBa2Cu307_ 6,152 Electron energy loss spectroscopy on the growth of epitaxial ultrathin films of a-Sn on CdTe(l 10), 112 Electron spectroscopy on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Epilayers a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of A s - H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new metal-organic precursors for growth of GaAs and AI~Ga~_~As by chemical epitaxy, 1 selective epitaxial growth of In1 _~AI~As by metal-organic vapour-phase epitaxy, 29 the selective epitaxial growth of silicon, 47 Etching etching of copper and copper oxide at high rates via generation of volatile copper species, 93 Ethylene growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 Film deposition a new metal-organic chemical vapour deposition process for selective copper metallization, 87 in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties, 72 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Film growth growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ
formation of As-H functionality by [3 elimination ~1: specific metal-organic arsenic compounds, 2 l on the growth of epitaxial ultrathin films of a-Sn on CdTe(l l(/), 112 preparation of copper and copper oxide flints by metal-organic chemical vapour deposition using flketoiminato complexes, 97 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H~,and NH 3 at low temperature, 185 the selective epitaxial growth of silicon, 47 Gallium arsenide improved GaAs/Ga~_xAI,As chemical beam epitaxy using triisopropylgallium, 15 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 new metal-organic precursors for growth of GaAs and AlxGa ~_xAs by chemical epitaxy, 1 reaction diffusion in Ta/GaAs contacts, 147 Glass mineral precursor for chemical vapour deposition of Rh metallic films, 143 Gold organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 Grain boundaries microstructure and cracking in pure and substituted YBa2CU3OT- 6, 152 Halides chemical vapour deposition precursors for metal silicides, 1 t 8 Heterostructures metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 High transition temperature oxide superconductors microstructure and cracking in pure and substituted YBa2Cu3OT- 6, 152 High transition temperature superconductors optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 Hydrogen preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 Impurities improved GaAs/Gal_xAlxAS chemical beam epitaxy using triisopropyigallium, l 5 new metal-organic precursors for growth of GaAs and AlxGal_xAS by chemical epitaxy, 1 Indium phosphide a new organoindium precursor for electronic materials, 34 Infrared spectroscopy silicon deposited by low pressure chemical vapour deposition from Si2H6: experiments, modelling and properties. 72
205 Integrated technology a new metal-organic chemical vapour deposition process for selective copper metaUization, 87 chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 chemical vapour deposition precursors for metal silicides, 118 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 Interfaces chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 reaction diffusion in Ta/GaAs contacts, 147 Integrated technology tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Laser processing in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 Layered compounds studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Metallization a new metal-organic chemical vapour deposition process for selective copper metallization, 87 Metals chemical vapour deposition precursors for metal silicides, 118 heterogeneous systems based on precious metal powders and polymers, 190 mineral precursor for chemical vapour deposition of Rh metallic films, 143 Microstructural development microstructure and cracking in pure and substituted YBa2CUaOT_ 6, 152 MOCVD a new metal-organic chemical vapour deposition process for selective copper metallization, 87 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po~-T conditions, 157 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 MOVPE a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 new group III aluminium and gallium hydride precursors for metal-organic vapour phase epitaxy, 25 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using /5ketoiminato complexes, 97 selective epitaxial growth of Int_~AlxAS by metal-organic vapour-phase epitaxy, 29
Nucleation chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 studies on the nucleation and growth of chemical vapordeposited W on TiN sub strates, 137 Optoelectronics selective epitaxial growth of Inx_xAl~As by metal-organic vapour-phase epitaxy, 29 Organic substances a new organoindium precursor for electronic materials, 34 chemical vapour deposition precursors for metal silicides, I 18 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials, 104 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 Oxidation molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 Oxygen improved GaAs/Ga~ _~AlxAS chemical beam epitaxy using triisopropylgallium, 15 Passivation chemical vapour deposition of tungsten in a UHV system: influence of substrate conditions on the initial stages of growth, 131 the selective epitaxial growth of silicon, 47 Photoconduction properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Photoluminescence a new organoindium precursor for electronic materials, 34 metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview, 9 Plasma processing in-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films, 68 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Polycrystalline silicon a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 the selective epitaxial growth of silicon, 47 Polymers heterogeneous systems based on precious metal powders and polymers, 190 Powders heterogeneous systems based on precious metal powders and polymers, 190 synthesis of chromium silicide-silicon carbide composite powders, 126 Precursors a new metal-organic chemical vapour deposition process for selective copper metallization, 87 growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 mineral precursor for chemical vapour deposition of Rh metallic films, 143
206 new metal-organic precursors for growth of GaAs and AlxGa~ _.As by chemical epitaxy, 1 organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition, 101 organometallic compounds: the chemist's contribution to new electronic materials. 104 Pressure chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Process and device modelling a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 Process and device modelling growth kinetics during metal-organic chemical vapour deposition of ZnTe, 41 Process and modelling silicon deposited by low pressure chemical vapour deposition from SizH6:experiments, modelling and properties, 72 Raman spectroscopy chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Ruthenium heterogeneous systems based on precious metal powders and polymers, 190 Selenium on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 Silane a model for low pressure chemical vapor deposition in a hotwall tubular reactor, 163 chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 Silicides chemical vapour deposition precursors for metal silicides, I 18 Silicon chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapour deposition with silane precursor, 77 computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation, 196 silicon deposited by low pressure chemical vapour deposition from Si2Hr: experiments, modelling and properties, 72 the selective epitaxial growth of silicon, 47 Silicon carbide growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172 synthesis of chromium silicide-silicon carbide composite powders, 126 Silicon dioxide growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane, 172
Silicon nitride molecular simulation: a microscopic approach to study the growth of native silicon oxide, 181 silicon nitride elaborated by low pressure chemical vapour deposition from Si2H~ and NH 3 at low temperature, 185 Sputtering studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 Sublimation mineral precursor for chemical vapour deposition of Rh metallic films, 143 Surface diffusion selective epitaxial growth of In~xAlxAs by metal-organic vapour-phase epitaxy, 29 Surface morphology organometallic compounds: the chemist's contribution to new electronic materials, 104 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors. 108 Surface structure selective epitaxial growth of Inl _.AsxAs by metal-organic vapour-phase epitaxy, 29 the selective epitaxial growth of silicon, 47 Tantalum reaction diffusion in Ta/GaAs contacts, 147 Thermal diffusion reaction diffusion in Ta/GaAs contacts, 147 Thermal processing new alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by fl elimination of specific metal-organic arsenic compounds, 21 Thick films reaction diffusion in Ta/GaAs contacts, 147 Thin films mineral precursor for chemical vapour deposition of Rh metallic films, 143 on the growth of epitaxial ultrathin films of a-Sn on CdTe(110), 112 optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and Po2- T conditions, 157 preparation of copper and copper oxide films by metal-organic chemical vapour deposition using flketoiminato complexes, 97 properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation, 82 Tungsten chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth, 131 studies on the nucleation and growth of chemical vapordeposited W on TiN substrates, 137 tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors, 108 X-ray spectroscopy synthesis of chromium silicide-silicon carbide composite powders, 126 Zinc telluride growth kinetics during metal-organic vapour deposition of ZnTe, 41