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Tantalum film circuits
ABSTRACTS ON MICROELECTRONICS AND RELIABILITY
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interconnexion materials to the packaging of microelectronic equipments. ("Thick film" in the context of this paper refers to films of electronic materials which are homogeneous and in excess of 0.0005 in. thickness.) T a n t a l u m film circuits. P. L. HAWI~S, Electron. Engng., June (1966), p. 388. The applications of electronic techniques in telephone switching and transmission systems are increasing rapidly. The numerous digital and analog circuit functions which are specified must be realized in an economical and reliable component form. One promising approach being studied uses "hybrid" integrated circuits formed by assembling semiconductor devices on to thin film circuits. Tantalum and its compounds are preferred materials for the film R and C elements because a wide range of precise and stable element values can be obtained. The film processing steps are based on the chemical etching and anodic oxidation of sputtered tantalum layers deposited on to fiat insulating substrates. Thin film h a f n i u m - h a f n i u m dioxide capacitors. F. HUBFa~,W. WITT, W. Y. PAN and I. H. PRATT, Proc. 1966 Electron. Components Conf., Washington D.C., p. 324. Experimental results on the electrical properties of thin film hafnium-hafnium dioxide capacitors are presented. The hafnium film is deposited onto a passive substrate by cathodic sputtering. Photolithographic techniques are used to determine the hafnium film pattern. A dielectric layer of hafnium dioxide is formed by anodic oxidation. Capacitance values up to 3 ~F/in ~ can be obtained with a dielectric constant of the oxide layer of 45. These capacitors exhibit a low temperature coefficient (+125 ppm/°C) over a temperature range from --196°C to +350°C.
An evaluation method for deposited thin film interracial interconnexions. M. YANC and B. G. BENDER,Proc. 1966 Electron. Components Conf., Washington D.C., p. 149. During the study of thin film interconnexions a specific geometrical pattern was developed for precision four-point probe resistance measurements. In principle any repeatability can be achieved through a simple design rule. Repeatability of one part in 10n has been demonstrated. In fact, the limiting factor is the sensitivity of the digital voltmeter. Although this evaluation method is designed to separate the 1R drop produced at an interconnect from the adjacent films, it can be applied to any thin film measurements. Equal potential lines have been used as the tool for the analysis. Correlation techniques applied to evaluating vacuum deposition of thin film nichrome resistor arrays. J. J. GROSSMANand H. R. ISAAR, Proc. 1966 Electron. Components Conf., Washington D.C., p. 46. Microelectronic arrays have the distinctive property that the relative location and orientation of components remains an invarient throughout processing. Statistical correlation techniques, when applied to equivalent components in arrays from a single run as well as between runs, can be used to evaluate the properties of processing techniques. Using relatively unsophisticated process equipment, it is possible to measure the random-error-limited precision and accuracy of the process by identifying the systematic error sources and apply correction factors to the data (simulating equipment modification). Two resistor patterns are used with vacuum deposited nichrome resistor arrays and the experimental results are analysed using these statistical correlation techniques. The conclusions include recommendations of methods for obtaining the ultimate process capability for the specific case tested (nichrome resistor arrays) and the suggestion that similar analyses are applicable to microelectronic arrays in general. The composition and some physical properties of manganese oxide thin films. R. M. VALLETTA J. MAKRIS and W. A. PLISKIN,Proc. 1966 Electron. Components Conf. Washington D.C., p. 31. A study of manganese oxide films prepared by spray deposition and of their effect on tantalum thin film capacitors was performed. The purposes of the study were to determine the effect of deposition parameters on the composition and quality of the films and to see if their presence between the anodic tantalum film and the counter-electrode would increase the stability of tantalum thin film capacitors having extremely thin (160-320A) anodic tantalum oxide films. Infra-red spectra of films prepared with various deposition parameters were obtained in the 4000-400 cm -x range. These spectra were found to be very sensitive indicators of variations in the composition of the films. Heat treatment of the films in oxygen established
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interconnexion materials to the packaging of microelectronic equipments. ("Thick film" in the context of this paper refers to films of electronic materials which are homogeneous and in excess of 0.0005 in. thickness.) T a n t a l u m film circuits. P. L. HAWI~S, Electron. Engng., June (1966), p. 388. The applications of electronic techniques in telephone switching and transmission systems are increasing rapidly. The numerous digital and analog circuit functions which are specified must be realized in an economical and reliable component form. One promising approach being studied uses "hybrid" integrated circuits formed by assembling semiconductor devices on to thin film circuits. Tantalum and its compounds are preferred materials for the film R and C elements because a wide range of precise and stable element values can be obtained. The film processing steps are based on the chemical etching and anodic oxidation of sputtered tantalum layers deposited on to fiat insulating substrates. Thin film h a f n i u m - h a f n i u m dioxide capacitors. F. HUBFa~,W. WITT, W. Y. PAN and I. H. PRATT, Proc. 1966 Electron. Components Conf., Washington D.C., p. 324. Experimental results on the electrical properties of thin film hafnium-hafnium dioxide capacitors are presented. The hafnium film is deposited onto a passive substrate by cathodic sputtering. Photolithographic techniques are used to determine the hafnium film pattern. A dielectric layer of hafnium dioxide is formed by anodic oxidation. Capacitance values up to 3 ~F/in ~ can be obtained with a dielectric constant of the oxide layer of 45. These capacitors exhibit a low temperature coefficient (+125 ppm/°C) over a temperature range from --196°C to +350°C.
An evaluation method for deposited thin film interracial interconnexions. M. YANC and B. G. BENDER,Proc. 1966 Electron. Components Conf., Washington D.C., p. 149. During the study of thin film interconnexions a specific geometrical pattern was developed for precision four-point probe resistance measurements. In principle any repeatability can be achieved through a simple design rule. Repeatability of one part in 10n has been demonstrated. In fact, the limiting factor is the sensitivity of the digital voltmeter. Although this evaluation method is designed to separate the 1R drop produced at an interconnect from the adjacent films, it can be applied to any thin film measurements. Equal potential lines have been used as the tool for the analysis. Correlation techniques applied to evaluating vacuum deposition of thin film nichrome resistor arrays. J. J. GROSSMANand H. R. ISAAR, Proc. 1966 Electron. Components Conf., Washington D.C., p. 46. Microelectronic arrays have the distinctive property that the relative location and orientation of components remains an invarient throughout processing. Statistical correlation techniques, when applied to equivalent components in arrays from a single run as well as between runs, can be used to evaluate the properties of processing techniques. Using relatively unsophisticated process equipment, it is possible to measure the random-error-limited precision and accuracy of the process by identifying the systematic error sources and apply correction factors to the data (simulating equipment modification). Two resistor patterns are used with vacuum deposited nichrome resistor arrays and the experimental results are analysed using these statistical correlation techniques. The conclusions include recommendations of methods for obtaining the ultimate process capability for the specific case tested (nichrome resistor arrays) and the suggestion that similar analyses are applicable to microelectronic arrays in general. The composition and some physical properties of manganese oxide thin films. R. M. VALLETTA J. MAKRIS and W. A. PLISKIN,Proc. 1966 Electron. Components Conf. Washington D.C., p. 31. A study of manganese oxide films prepared by spray deposition and of their effect on tantalum thin film capacitors was performed. The purposes of the study were to determine the effect of deposition parameters on the composition and quality of the films and to see if their presence between the anodic tantalum film and the counter-electrode would increase the stability of tantalum thin film capacitors having extremely thin (160-320A) anodic tantalum oxide films. Infra-red spectra of films prepared with various deposition parameters were obtained in the 4000-400 cm -x range. These spectra were found to be very sensitive indicators of variations in the composition of the films. Heat treatment of the films in oxygen established